PT1145607E - Produção de revestimentos de resina fotossensível - Google Patents
Produção de revestimentos de resina fotossensível Download PDFInfo
- Publication number
- PT1145607E PT1145607E PT99963506T PT99963506T PT1145607E PT 1145607 E PT1145607 E PT 1145607E PT 99963506 T PT99963506 T PT 99963506T PT 99963506 T PT99963506 T PT 99963506T PT 1145607 E PT1145607 E PT 1145607E
- Authority
- PT
- Portugal
- Prior art keywords
- photosensitive resin
- coating
- process according
- radiation
- composition
- Prior art date
Links
- 238000000576 coating method Methods 0.000 title claims abstract description 57
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 229920002120 photoresistant polymer Polymers 0.000 title description 2
- 239000011248 coating agent Substances 0.000 claims abstract description 52
- 238000000034 method Methods 0.000 claims abstract description 38
- 230000005855 radiation Effects 0.000 claims abstract description 35
- 239000000203 mixture Substances 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 229920005989 resin Polymers 0.000 claims description 68
- 239000011347 resin Substances 0.000 claims description 68
- 238000010438 heat treatment Methods 0.000 claims description 29
- 239000011342 resin composition Substances 0.000 claims description 26
- 238000011161 development Methods 0.000 claims description 14
- 239000002904 solvent Substances 0.000 claims description 12
- 239000003795 chemical substances by application Substances 0.000 claims description 10
- 229920001187 thermosetting polymer Polymers 0.000 claims description 10
- 238000010276 construction Methods 0.000 claims description 6
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 3
- 239000003960 organic solvent Substances 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 239000004593 Epoxy Substances 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 125000003700 epoxy group Chemical group 0.000 claims 1
- 238000007669 thermal treatment Methods 0.000 abstract 1
- 238000010792 warming Methods 0.000 abstract 1
- 238000003466 welding Methods 0.000 description 12
- 238000001035 drying Methods 0.000 description 8
- 238000011282 treatment Methods 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 150000002924 oxiranes Chemical class 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 230000002123 temporal effect Effects 0.000 description 3
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- QGBSISYHAICWAH-UHFFFAOYSA-N dicyandiamide Chemical compound NC(N)=NC#N QGBSISYHAICWAH-UHFFFAOYSA-N 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- WZRRRFSJFQTGGB-UHFFFAOYSA-N 1,3,5-triazinane-2,4,6-trithione Chemical compound S=C1NC(=S)NC(=S)N1 WZRRRFSJFQTGGB-UHFFFAOYSA-N 0.000 description 1
- OUPZKGBUJRBPGC-UHFFFAOYSA-N 1,3,5-tris(oxiran-2-ylmethyl)-1,3,5-triazinane-2,4,6-trione Chemical compound O=C1N(CC2OC2)C(=O)N(CC2OC2)C(=O)N1CC1CO1 OUPZKGBUJRBPGC-UHFFFAOYSA-N 0.000 description 1
- RWNUSVWFHDHRCJ-UHFFFAOYSA-N 1-butoxypropan-2-ol Chemical compound CCCCOCC(C)O RWNUSVWFHDHRCJ-UHFFFAOYSA-N 0.000 description 1
- RWXMAAYKJDQVTF-UHFFFAOYSA-N 2-(2-hydroxyethoxy)ethyl prop-2-enoate Chemical compound OCCOCCOC(=O)C=C RWXMAAYKJDQVTF-UHFFFAOYSA-N 0.000 description 1
- YIJYFLXQHDOQGW-UHFFFAOYSA-N 2-[2,4,6-trioxo-3,5-bis(2-prop-2-enoyloxyethyl)-1,3,5-triazinan-1-yl]ethyl prop-2-enoate Chemical compound C=CC(=O)OCCN1C(=O)N(CCOC(=O)C=C)C(=O)N(CCOC(=O)C=C)C1=O YIJYFLXQHDOQGW-UHFFFAOYSA-N 0.000 description 1
- ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 2-phenyl-1h-imidazole Chemical compound C1=CNC(C=2C=CC=CC=2)=N1 ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 0.000 description 1
- VEORPZCZECFIRK-UHFFFAOYSA-N 3,3',5,5'-tetrabromobisphenol A Chemical compound C=1C(Br)=C(O)C(Br)=CC=1C(C)(C)C1=CC(Br)=C(O)C(Br)=C1 VEORPZCZECFIRK-UHFFFAOYSA-N 0.000 description 1
- LCFVJGUPQDGYKZ-UHFFFAOYSA-N Bisphenol A diglycidyl ether Chemical compound C=1C=C(OCC2OC2)C=CC=1C(C)(C)C(C=C1)=CC=C1OCC1CO1 LCFVJGUPQDGYKZ-UHFFFAOYSA-N 0.000 description 1
- 239000005494 Chlorotoluron Substances 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical class S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- 125000003580 L-valyl group Chemical group [H]N([H])[C@]([H])(C(=O)[*])C(C([H])([H])[H])(C([H])([H])[H])[H] 0.000 description 1
- DAKWPKUUDNSNPN-UHFFFAOYSA-N Trimethylolpropane triacrylate Chemical class C=CC(=O)OCC(CC)(COC(=O)C=C)COC(=O)C=C DAKWPKUUDNSNPN-UHFFFAOYSA-N 0.000 description 1
- HVVWZTWDBSEWIH-UHFFFAOYSA-N [2-(hydroxymethyl)-3-prop-2-enoyloxy-2-(prop-2-enoyloxymethyl)propyl] prop-2-enoate Chemical compound C=CC(=O)OCC(CO)(COC(=O)C=C)COC(=O)C=C HVVWZTWDBSEWIH-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- JXCGFZXSOMJFOA-UHFFFAOYSA-N chlorotoluron Chemical compound CN(C)C(=O)NC1=CC=C(C)C(Cl)=C1 JXCGFZXSOMJFOA-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007590 electrostatic spraying Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 239000008240 homogeneous mixture Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007763 reverse roll coating Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
- G03F7/203—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure comprising an imagewise exposure to electromagnetic radiation or corpuscular radiation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0073—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces
- H05K3/0082—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces characterised by the exposure method of radiation-sensitive masks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/05—Patterning and lithography; Masks; Details of resist
- H05K2203/0502—Patterning and lithography
- H05K2203/0505—Double exposure of the same photosensitive layer
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0073—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces
- H05K3/0076—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces characterised by the composition of the mask
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
- Materials For Photolithography (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH252998 | 1998-12-22 |
Publications (1)
Publication Number | Publication Date |
---|---|
PT1145607E true PT1145607E (pt) | 2012-01-05 |
Family
ID=4235858
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PT99963506T PT1145607E (pt) | 1998-12-22 | 1999-12-11 | Produção de revestimentos de resina fotossensível |
Country Status (12)
Country | Link |
---|---|
US (1) | US6686122B1 (zh) |
EP (1) | EP1145607B1 (zh) |
JP (1) | JP2002533775A (zh) |
KR (1) | KR100674660B1 (zh) |
CN (1) | CN1218220C (zh) |
AT (1) | ATE528973T1 (zh) |
CA (1) | CA2357001C (zh) |
ES (1) | ES2374807T3 (zh) |
HK (1) | HK1039546A1 (zh) |
PT (1) | PT1145607E (zh) |
TW (1) | TW585892B (zh) |
WO (1) | WO2000038487A1 (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10035430B4 (de) * | 2000-07-20 | 2005-06-16 | Advanced Photonics Technologies Ag | Verfahren und Vorrichtung zur thermischen Behandlung einer Fotolackschicht auf einem Schaltungssubstrat, insbesondere Halbleiterwafer |
JP6571923B2 (ja) * | 2014-10-31 | 2019-09-04 | 浜松ホトニクス株式会社 | レーザー光照射による硬化物の製造方法 |
WO2016185908A1 (ja) * | 2015-05-15 | 2016-11-24 | 住友化学株式会社 | 基材の製造方法及び有機el素子 |
CN113099624A (zh) * | 2021-04-06 | 2021-07-09 | 浙江欣旺达电子有限公司 | 一种线路板阻焊层的制作方法 |
Family Cites Families (36)
Publication number | Priority date | Publication date | Assignee | Title |
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US4102687A (en) * | 1977-02-14 | 1978-07-25 | General Electric Company | UV Curable composition of a thermosetting condensation resin and Group VIa onium salt |
DE3151078A1 (de) * | 1981-12-23 | 1983-07-28 | Hoechst Ag, 6230 Frankfurt | Verfahren zur herstellung von reliefbildern |
US4621043A (en) | 1983-01-31 | 1986-11-04 | E. I. Du Pont De Nemours And Company | Storage stable photopolymerizable composition |
US5362607A (en) * | 1986-06-13 | 1994-11-08 | Microsi, Inc. | Method for making a patterned resist substrate composite |
DE3888400D1 (de) | 1987-06-12 | 1994-04-21 | Ciba Geigy | Photoresistzusammensetzungen. |
US4985340A (en) * | 1988-06-01 | 1991-01-15 | Minnesota Mining And Manufacturing Company | Energy curable compositions: two component curing agents |
EP0346522A3 (en) * | 1988-06-16 | 1991-04-03 | Nippon CMK Corp. | Printed wiring board |
US5114830A (en) * | 1988-10-28 | 1992-05-19 | W. R. Grace & Co.-Conn. | Solder mask resins having improved stability containing a multifunctional epoxide and a partial ester or styrene-maleic anhydride copolymer |
US5045435A (en) | 1988-11-25 | 1991-09-03 | Armstrong World Industries, Inc. | Water-borne, alkali-developable, photoresist coating compositions and their preparation |
EP0536272B1 (en) * | 1990-06-27 | 1999-09-22 | Coates Brothers Plc | Image-forming process |
JPH04136857A (ja) * | 1990-09-28 | 1992-05-11 | Hitachi Ltd | 光硬化性レジスト組成物およびこれを用いたプリント回路板の製造方法およびプリント回路板 |
EP0486036B1 (en) * | 1990-11-16 | 1995-02-01 | Setsuo Tate | Drying method and device for coated layer |
DE59108989D1 (de) | 1990-12-18 | 1998-06-25 | Ciba Geigy Ag | Strahlungsempfindliche Zusammensetzung auf Basis von Wasser als Lösungs- bzw. Dispersionsmittel |
GB2259916A (en) * | 1991-09-27 | 1993-03-31 | Coates Brothers Plc | Solder-resist, heat-curable compositions |
JPH05216227A (ja) * | 1992-02-06 | 1993-08-27 | Konica Corp | 光重合性組成物 |
DE69320241T2 (de) | 1992-05-06 | 1999-04-29 | Kyowa Hakko Kogyo Kk | Chemisch amplifizierte Resistzusammensetzung |
US5384229A (en) | 1992-05-07 | 1995-01-24 | Shipley Company Inc. | Photoimageable compositions for electrodeposition |
US5296334A (en) * | 1992-08-28 | 1994-03-22 | Macdermid, Incorporated | Radiation-curable composition useful for preparation of solder masks |
KR0126118B1 (ko) * | 1992-09-10 | 1997-12-18 | 다나카 쇼소 | 솔더레지스트용 잉크조성물 |
JPH06295060A (ja) * | 1992-10-29 | 1994-10-21 | Ajinomoto Co Inc | 感光性樹脂組成物又は感光性熱硬化性樹脂組成物及びそれらを使用したフォトソルダ−レジスト組成物 |
US5372915A (en) | 1993-05-19 | 1994-12-13 | Eastman Kodak Company | Method of making a lithographic printing plate containing a resole resin and a novolac resin in the radiation sensitive layer |
WO1996011239A1 (fr) * | 1994-10-05 | 1996-04-18 | Goo Chemical Co., Ltd. | Encre resist de photosoudure, carte a circuit imprime et procede de fabrication |
US5853957A (en) * | 1995-05-08 | 1998-12-29 | Tamura Kaken Co., Ltd | Photosensitive resin compositions, cured films thereof, and circuit boards |
JP2718007B2 (ja) * | 1995-06-06 | 1998-02-25 | 太陽インキ製造株式会社 | アルカリ現像可能な一液型フォトソルダーレジスト組成物及びそれを用いたプリント配線板の製造方法 |
JP3425311B2 (ja) * | 1996-03-04 | 2003-07-14 | 株式会社東芝 | ネガ型感光性ポリマー樹脂組成物、これを用いたパターン形成方法、および電子部品 |
JP3254572B2 (ja) * | 1996-06-28 | 2002-02-12 | バンティコ株式会社 | 光重合性熱硬化性樹脂組成物 |
US6197478B1 (en) * | 1996-09-25 | 2001-03-06 | Agfa-Gevaert, N.V. | Method for making a driographic printing plate involving the use of a heat-sensitive imaging element |
JP3363332B2 (ja) * | 1996-11-28 | 2003-01-08 | 本田技研工業株式会社 | ポリオレフィン用プライマー組成物 |
JP3190967B2 (ja) * | 1996-12-16 | 2001-07-23 | 住友ベークライト株式会社 | アルカリ性水溶液及び感光性樹脂組成物のパターン形成方法 |
JPH10335267A (ja) * | 1997-05-30 | 1998-12-18 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
US6045857A (en) * | 1997-06-19 | 2000-04-04 | Macdermid Acumen, Inc. | Curable, water-borne one-component coating system using thermally labile hydrophillic groups |
US6583198B2 (en) * | 1997-11-28 | 2003-06-24 | Hitachi Chemical Company, Ltd. | Photo curable resin composition and photosensitive element |
US6087417A (en) * | 1998-01-16 | 2000-07-11 | The Valspar Corporation | Epoxy resin/acid/tertiary amine reaction product with reactive diluent |
US6248225B1 (en) * | 1998-05-26 | 2001-06-19 | Ppg Industries Ohio, Inc. | Process for forming a two-coat electrodeposited composite coating the composite coating and chip resistant electrodeposited coating composition |
US6291027B1 (en) * | 1999-05-26 | 2001-09-18 | Ppg Industries Ohio, Inc. | Processes for drying and curing primer coating compositions |
US6417292B1 (en) * | 2000-04-07 | 2002-07-09 | Ppg Industries Ohio, Inc. | Electrodepositable coating compositions including ungelled reaction products of epoxy functional polyesters and amines coated substrates and methods of electrocoating using the same |
-
1999
- 1999-12-11 CA CA002357001A patent/CA2357001C/en not_active Expired - Fee Related
- 1999-12-11 CN CN998155888A patent/CN1218220C/zh not_active Expired - Fee Related
- 1999-12-11 ES ES99963506T patent/ES2374807T3/es not_active Expired - Lifetime
- 1999-12-11 PT PT99963506T patent/PT1145607E/pt unknown
- 1999-12-11 WO PCT/EP1999/009840 patent/WO2000038487A1/de active IP Right Grant
- 1999-12-11 AT AT99963506T patent/ATE528973T1/de active
- 1999-12-11 US US09/868,817 patent/US6686122B1/en not_active Expired - Fee Related
- 1999-12-11 EP EP99963506A patent/EP1145607B1/de not_active Expired - Lifetime
- 1999-12-11 JP JP2000590441A patent/JP2002533775A/ja active Pending
- 1999-12-11 KR KR1020017007913A patent/KR100674660B1/ko not_active IP Right Cessation
- 1999-12-20 TW TW088122386A patent/TW585892B/zh not_active IP Right Cessation
-
2002
- 2002-02-11 HK HK02101079.0A patent/HK1039546A1/zh unknown
Also Published As
Publication number | Publication date |
---|---|
WO2000038487A1 (de) | 2000-06-29 |
EP1145607A1 (de) | 2001-10-17 |
HK1039546A1 (zh) | 2002-04-26 |
CN1218220C (zh) | 2005-09-07 |
JP2002533775A (ja) | 2002-10-08 |
KR100674660B1 (ko) | 2007-01-26 |
CA2357001A1 (en) | 2000-06-29 |
ES2374807T3 (es) | 2012-02-22 |
CN1333996A (zh) | 2002-01-30 |
ATE528973T1 (de) | 2011-10-15 |
US6686122B1 (en) | 2004-02-03 |
TW585892B (en) | 2004-05-01 |
EP1145607B1 (de) | 2011-10-12 |
CA2357001C (en) | 2009-01-20 |
KR20010111484A (ko) | 2001-12-19 |
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