PL3832737T3 - Sposób wytwarzania heterozłączowego ogniwa słonecznego - Google Patents

Sposób wytwarzania heterozłączowego ogniwa słonecznego

Info

Publication number
PL3832737T3
PL3832737T3 PL21150107.7T PL21150107T PL3832737T3 PL 3832737 T3 PL3832737 T3 PL 3832737T3 PL 21150107 T PL21150107 T PL 21150107T PL 3832737 T3 PL3832737 T3 PL 3832737T3
Authority
PL
Poland
Prior art keywords
hetero
manufacturing
solar cell
junction solar
junction
Prior art date
Application number
PL21150107.7T
Other languages
English (en)
Inventor
Pierre Papet
Damien LACHENAL
Original Assignee
Meyer Burger (Germany) Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=46506114&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=PL3832737(T3) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Meyer Burger (Germany) Gmbh filed Critical Meyer Burger (Germany) Gmbh
Publication of PL3832737T3 publication Critical patent/PL3832737T3/pl

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/133—Providing edge isolation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
PL21150107.7T 2012-07-02 2012-07-02 Sposób wytwarzania heterozłączowego ogniwa słonecznego PL3832737T3 (pl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP21150107.7A EP3832737B1 (en) 2012-07-02 2012-07-02 Method of manufacturing a hetero-junction solar cell
EP12004905.1A EP2682990B2 (en) 2012-07-02 2012-07-02 Methods of manufacturing hetero-junction solar cells with edge isolation

Publications (1)

Publication Number Publication Date
PL3832737T3 true PL3832737T3 (pl) 2025-01-07

Family

ID=46506114

Family Applications (1)

Application Number Title Priority Date Filing Date
PL21150107.7T PL3832737T3 (pl) 2012-07-02 2012-07-02 Sposób wytwarzania heterozłączowego ogniwa słonecznego

Country Status (4)

Country Link
EP (3) EP2682990B2 (pl)
ES (2) ES2873473T5 (pl)
HU (1) HUE069227T2 (pl)
PL (1) PL3832737T3 (pl)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2682990B2 (en) 2012-07-02 2023-11-22 Meyer Burger (Germany) GmbH Methods of manufacturing hetero-junction solar cells with edge isolation
CN105723524B (zh) * 2013-11-08 2017-10-03 松下知识产权经营株式会社 太阳能电池
WO2015178307A1 (ja) * 2014-05-23 2015-11-26 シャープ株式会社 光電変換素子
WO2016052046A1 (ja) * 2014-09-30 2016-04-07 株式会社カネカ 太陽電池およびその製造方法、ならびに太陽電池モジュールおよびその製造方法
CN105810770B (zh) * 2014-12-30 2017-10-03 新日光能源科技股份有限公司 异质结太阳能电池及其制造方法
FR3038143B1 (fr) 2015-06-26 2017-07-21 Commissariat Energie Atomique Procede d'isolation des bords d'une cellule photovoltaique a heterojonction
KR101778128B1 (ko) * 2016-01-20 2017-09-13 엘지전자 주식회사 태양전지
WO2019182243A1 (ko) * 2018-03-19 2019-09-26 엘지전자 주식회사 태양 전지 및 그 제조 방법
DE102019123758A1 (de) 2019-09-05 2021-03-11 Schaeffler Technologies AG & Co. KG Wellgetriebe zur variablen Ventilsteuerung einer Brennkraftmaschine
DE102019123785A1 (de) 2019-09-05 2021-03-11 Meyer Burger (Germany) Gmbh Rückseitenemitter-Solarzellenstruktur mit einem Heteroübergang sowie Verfahren und Vorrichtung zur Herstellung derselben
CN111755574A (zh) * 2020-07-27 2020-10-09 苏州联诺太阳能科技有限公司 双面太阳能电池及其制备方法
EP4068393A1 (en) 2021-03-31 2022-10-05 Meyer Burger Research AG Method for manufacturing solar cells and solar module
CN116273670B (zh) * 2023-02-28 2024-07-19 武汉鑫誉金天科技有限公司 太阳能电池涂覆设备

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* Cited by examiner, † Cited by third party
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EP0881694A1 (en) 1997-05-30 1998-12-02 Interuniversitair Micro-Elektronica Centrum Vzw Solar cell and process of manufacturing the same
JP3679598B2 (ja) 1998-03-05 2005-08-03 三洋電機株式会社 光起電力素子及びその製造方法
JPH11261086A (ja) 1998-03-12 1999-09-24 Sharp Corp 光起電力装置及び太陽電池モジュール
US6262359B1 (en) 1999-03-17 2001-07-17 Ebara Solar, Inc. Aluminum alloy back junction solar cell and a process for fabrication thereof
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JP4194379B2 (ja) * 2003-01-22 2008-12-10 三洋電機株式会社 光起電力装置
JP2004296550A (ja) 2003-03-25 2004-10-21 Sanyo Electric Co Ltd 光起電力素子およびその製造方法
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JP2011035092A (ja) 2009-07-31 2011-02-17 Sanyo Electric Co Ltd 裏面接合型太陽電池及びそれを用いた太陽電池モジュール
JP5031007B2 (ja) 2009-09-07 2012-09-19 三洋電機株式会社 光起電力素子
JP5421701B2 (ja) 2009-09-09 2014-02-19 株式会社カネカ 結晶シリコン太陽電池及びその製造方法
JP5289578B2 (ja) 2009-09-29 2013-09-11 京セラ株式会社 太陽電池素子および太陽電池モジュール
JP2011187906A (ja) 2010-02-15 2011-09-22 Kyocera Corp 太陽電池素子およびその製造方法
KR101196793B1 (ko) 2010-08-25 2012-11-05 엘지전자 주식회사 태양 전지 및 그 제조 방법
KR101275575B1 (ko) 2010-10-11 2013-06-14 엘지전자 주식회사 후면전극형 태양전지 및 이의 제조 방법
JP5496856B2 (ja) 2010-11-02 2014-05-21 三洋電機株式会社 光起電力素子の製造方法
EP2450970A1 (en) * 2010-11-05 2012-05-09 Roth & Rau AG Edge isolation by lift-off
EP2682990B2 (en) 2012-07-02 2023-11-22 Meyer Burger (Germany) GmbH Methods of manufacturing hetero-junction solar cells with edge isolation

Also Published As

Publication number Publication date
ES3005058T3 (en) 2025-03-13
ES2873473T3 (es) 2021-11-03
EP4404282A2 (en) 2024-07-24
ES2873473T5 (es) 2024-06-07
EP3832737C0 (en) 2024-09-04
EP3832737B1 (en) 2024-09-04
EP2682990B2 (en) 2023-11-22
EP2682990A1 (en) 2014-01-08
EP2682990B1 (en) 2021-03-24
EP4404282A3 (en) 2024-10-23
HUE069227T2 (hu) 2025-02-28
EP3832737A1 (en) 2021-06-09

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