PL136606B1 - Mosfet device of vertical structure - Google Patents

Mosfet device of vertical structure Download PDF

Info

Publication number
PL136606B1
PL136606B1 PL1981229786A PL22978681A PL136606B1 PL 136606 B1 PL136606 B1 PL 136606B1 PL 1981229786 A PL1981229786 A PL 1981229786A PL 22978681 A PL22978681 A PL 22978681A PL 136606 B1 PL136606 B1 PL 136606B1
Authority
PL
Poland
Prior art keywords
drain region
region
gate
source
drain
Prior art date
Application number
PL1981229786A
Other languages
English (en)
Polish (pl)
Other versions
PL229786A1 (index.php
Inventor
Alvin M Goodman
Ramon U Martinelii
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of PL229786A1 publication Critical patent/PL229786A1/xx
Publication of PL136606B1 publication Critical patent/PL136606B1/pl

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10W20/495—

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Bipolar Transistors (AREA)
PL1981229786A 1980-02-22 1981-02-20 Mosfet device of vertical structure PL136606B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12371580A 1980-02-22 1980-02-22

Publications (2)

Publication Number Publication Date
PL229786A1 PL229786A1 (index.php) 1981-09-18
PL136606B1 true PL136606B1 (en) 1986-03-31

Family

ID=22410424

Family Applications (1)

Application Number Title Priority Date Filing Date
PL1981229786A PL136606B1 (en) 1980-02-22 1981-02-20 Mosfet device of vertical structure

Country Status (8)

Country Link
JP (1) JPS56131961A (index.php)
DE (1) DE3105693A1 (index.php)
FR (1) FR2476914B1 (index.php)
GB (1) GB2070331B (index.php)
IT (1) IT1135091B (index.php)
PL (1) PL136606B1 (index.php)
SE (1) SE456291B (index.php)
YU (1) YU41520B (index.php)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57141964A (en) * 1981-02-26 1982-09-02 Nippon Telegr & Teleph Corp <Ntt> Insulated gate type field effect transistor
DE3210353A1 (de) * 1982-03-20 1983-09-22 Robert Bosch Gmbh, 7000 Stuttgart Monolithisch integrierte darlingtonschaltung
US4577208A (en) * 1982-09-23 1986-03-18 Eaton Corporation Bidirectional power FET with integral avalanche protection
EP0207178A1 (en) * 1985-06-25 1987-01-07 Eaton Corporation Bidirectional power fet with field shaping
EP0205639A1 (en) * 1985-06-25 1986-12-30 Eaton Corporation Bidirectional power fet with substrate referenced shield
EP0119400B1 (en) * 1983-02-17 1987-08-05 Nissan Motor Co., Ltd. A vertical-type mosfet and method of fabricating the same
EP0205640A1 (en) * 1985-06-25 1986-12-30 Eaton Corporation Lateral bidirectional shielded notch fet
SG165138A1 (en) * 2000-07-12 2010-10-28 Inst Of Microelectronics A semiconductor device
US20060118832A1 (en) * 2003-01-21 2006-06-08 North-West University Fast switching power insulated gate semiconductor device
US7276747B2 (en) * 2005-04-25 2007-10-02 Semiconductor Components Industries, L.L.C. Semiconductor device having screening electrode and method
CN102569386B (zh) * 2010-12-17 2015-02-04 上海华虹宏力半导体制造有限公司 具有屏蔽栅的vdmos器件及其制备方法
CN102569385B (zh) * 2010-12-17 2015-04-08 上海华虹宏力半导体制造有限公司 具有屏蔽栅的vdmos结构及其制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1132810A (en) * 1966-03-30 1968-11-06 Matsushita Electronics Corp Field-effect transistor having insulated gates
GB1316555A (index.php) * 1969-08-12 1973-05-09
US3845495A (en) * 1971-09-23 1974-10-29 Signetics Corp High voltage, high frequency double diffused metal oxide semiconductor device
GB1423449A (en) * 1973-07-27 1976-02-04 Standard Telephones Cables Ltd Semiconductor device
JPS52106688A (en) * 1976-03-05 1977-09-07 Nec Corp Field-effect transistor

Also Published As

Publication number Publication date
YU42481A (en) 1983-06-30
DE3105693C2 (index.php) 1992-12-10
YU41520B (en) 1987-08-31
GB2070331A (en) 1981-09-03
GB2070331B (en) 1984-05-23
IT1135091B (it) 1986-08-20
DE3105693A1 (de) 1981-11-26
JPH0213830B2 (index.php) 1990-04-05
FR2476914B1 (fr) 1985-10-18
IT8119216A0 (it) 1981-01-20
SE8100148L (sv) 1981-08-23
FR2476914A1 (fr) 1981-08-28
SE456291B (sv) 1988-09-19
PL229786A1 (index.php) 1981-09-18
JPS56131961A (en) 1981-10-15

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