PH21462A - Removal of semiconductor wafers from dicing film - Google Patents

Removal of semiconductor wafers from dicing film

Info

Publication number
PH21462A
PH21462A PH31535A PH31535A PH21462A PH 21462 A PH21462 A PH 21462A PH 31535 A PH31535 A PH 31535A PH 31535 A PH31535 A PH 31535A PH 21462 A PH21462 A PH 21462A
Authority
PH
Philippines
Prior art keywords
adhesive
removal
semiconductor wafers
dicing film
film
Prior art date
Application number
PH31535A
Other languages
English (en)
Inventor
Aurichio Joseph Anthony
Original Assignee
Stauffer Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stauffer Chemical Co filed Critical Stauffer Chemical Co
Publication of PH21462A publication Critical patent/PH21462A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/918—Delaminating processes adapted for specified product, e.g. delaminating medical specimen slide
    • Y10S156/93—Semiconductive product delaminating, e.g. delaminating emiconductive wafer from underlayer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor
    • Y10T156/1052—Methods of surface bonding and/or assembly therefor with cutting, punching, tearing or severing
    • Y10T156/1062—Prior to assembly
    • Y10T156/1075—Prior to assembly of plural laminae from single stock and assembling to each other or to additional lamina
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/19—Delaminating means

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Dicing (AREA)
  • Die Bonding (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Adhesive Tapes (AREA)
PH31535A 1983-12-19 1984-12-05 Removal of semiconductor wafers from dicing film PH21462A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/562,899 US4664739A (en) 1983-12-19 1983-12-19 Removal of semiconductor wafers from dicing film

Publications (1)

Publication Number Publication Date
PH21462A true PH21462A (en) 1987-10-28

Family

ID=24248262

Family Applications (1)

Application Number Title Priority Date Filing Date
PH31535A PH21462A (en) 1983-12-19 1984-12-05 Removal of semiconductor wafers from dicing film

Country Status (5)

Country Link
US (1) US4664739A (enExample)
EP (1) EP0146197A3 (enExample)
JP (1) JPS60136331A (enExample)
KR (1) KR850005148A (enExample)
PH (1) PH21462A (enExample)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
PH25206A (en) * 1985-12-12 1991-03-27 Lintec K K Control apparatus for reducing adhesive force of adhesive agent adhering between semiconductor wafer and substrate
US4793883A (en) * 1986-07-14 1988-12-27 National Starch And Chemical Corporation Method of bonding a semiconductor chip to a substrate
US5030308A (en) * 1986-07-14 1991-07-09 National Starch And Chemical Investment Holding Corporation Method of bonding a semiconductor chip to a substrate
US4826553A (en) * 1987-06-18 1989-05-02 The United States Of America As Represented By The Secretary Of The Air Force Method for replicating an optical element
US4921564A (en) * 1988-05-23 1990-05-01 Semiconductor Equipment Corp. Method and apparatus for removing circuit chips from wafer handling tape
US5154793A (en) * 1988-09-27 1992-10-13 General Electric Company Method and apparatus for removing components bonded to a substrate
JPH0369135A (ja) * 1989-08-08 1991-03-25 Nec Kyushu Ltd 半導体装置製造用粘着シート
US5123986A (en) * 1989-08-10 1992-06-23 Casio Computer Co., Ltd. Conductive connecting method
JPH03135048A (ja) * 1989-10-20 1991-06-10 Fujitsu Ltd 半導体装置の製造方法
EP0505535A1 (de) * 1990-10-15 1992-09-30 TRESKY, Miroslav Vorrichtung zum entfernen defekter bauteile aus schaltungen
US5106450A (en) * 1990-12-20 1992-04-21 International Business Machines Corporation Dry film resist transport and lamination system for semiconductor wafers
US5240546A (en) * 1991-04-26 1993-08-31 Sumitomo Electric Industries, Ltd. Apparatus for peeling semiconductor substrate
US5258236A (en) * 1991-05-03 1993-11-02 Ibm Corporation Multi-layer thin film structure and parallel processing method for fabricating same
JP3467611B2 (ja) * 1995-09-29 2003-11-17 日本テキサス・インスツルメンツ株式会社 半導体装置の製造方法
KR100471936B1 (ko) * 1996-06-04 2005-09-09 미쓰비시 마테리알 가부시키가이샤 웨이퍼의세정·박리방법및장치
US5757073A (en) * 1996-12-13 1998-05-26 International Business Machines Corporation Heatsink and package structure for wirebond chip rework and replacement
JP2000349101A (ja) * 1999-06-07 2000-12-15 Lintec Corp 転写用テープおよびその使用方法
US6723620B1 (en) * 1999-11-24 2004-04-20 International Rectifier Corporation Power semiconductor die attach process using conductive adhesive film
US6426552B1 (en) * 2000-05-19 2002-07-30 Micron Technology, Inc. Methods employing hybrid adhesive materials to secure components of semiconductor device assemblies and packages to one another and assemblies and packages including components secured to one another with such hybrid adhesive materials
DE10140827B4 (de) * 2001-08-21 2004-07-29 Infineon Technologies Ag Vorrichtung zum Debonden von Dünnwafern
US20050204554A1 (en) * 2002-04-04 2005-09-22 Sillner Georg R Method for processing electrical components, especially semiconductor chips, and device for carrying out the method
US6652707B2 (en) 2002-04-29 2003-11-25 Applied Optoelectronics, Inc. Method and apparatus for demounting workpieces from adhesive film
US6580054B1 (en) * 2002-06-10 2003-06-17 New Wave Research Scribing sapphire substrates with a solid state UV laser
US6806544B2 (en) 2002-11-05 2004-10-19 New Wave Research Method and apparatus for cutting devices from conductive substrates secured during cutting by vacuum pressure
US6960813B2 (en) * 2002-06-10 2005-11-01 New Wave Research Method and apparatus for cutting devices from substrates
JP4107417B2 (ja) * 2002-10-15 2008-06-25 日東電工株式会社 チップ状ワークの固定方法
TWI248244B (en) * 2003-02-19 2006-01-21 J P Sercel Associates Inc System and method for cutting using a variable astigmatic focal beam spot
JP4283596B2 (ja) * 2003-05-29 2009-06-24 日東電工株式会社 チップ状ワークの固定方法
US20070148480A1 (en) * 2003-12-24 2007-06-28 Toyoaki Ishiwata Laminate
JP4275522B2 (ja) * 2003-12-26 2009-06-10 日東電工株式会社 ダイシング・ダイボンドフィルム
JP4443962B2 (ja) * 2004-03-17 2010-03-31 日東電工株式会社 ダイシング・ダイボンドフィルム
CN101506948B (zh) * 2006-09-12 2012-12-12 日东电工株式会社 切割/芯片焊接膜
US20130256286A1 (en) * 2009-12-07 2013-10-03 Ipg Microsystems Llc Laser processing using an astigmatic elongated beam spot and using ultrashort pulses and/or longer wavelengths
US20110132885A1 (en) * 2009-12-07 2011-06-09 J.P. Sercel Associates, Inc. Laser machining and scribing systems and methods
JP6723644B2 (ja) * 2016-05-16 2020-07-15 株式会社ディスコ エキスパンドシート
CN111217140A (zh) * 2020-01-08 2020-06-02 歌尔股份有限公司 感应取料装置及其取料方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3600246A (en) * 1968-05-17 1971-08-17 Rca Corp Method of making laminated semiconductor devices
GB1299177A (en) * 1969-01-17 1972-12-06 Ciba Geigy Uk Ltd Reinforced composites
FR2081250A1 (en) * 1970-03-23 1971-12-03 Silec Semi Conducteurs Abrasive jet cutting of semiconductor slices - using resin mask
US3963551A (en) * 1974-03-05 1976-06-15 Stromberg-Carlson Corporation Method for bonding semiconductor chips
JPS5542326U (enExample) * 1978-09-12 1980-03-18
JPS59105327A (ja) * 1982-12-08 1984-06-18 Toshiba Corp 半導体素子の半田付け方法

Also Published As

Publication number Publication date
KR850005148A (ko) 1985-08-21
US4664739A (en) 1987-05-12
EP0146197A2 (en) 1985-06-26
EP0146197A3 (en) 1986-12-30
JPS60136331A (ja) 1985-07-19
JPH0334853B2 (enExample) 1991-05-24

Similar Documents

Publication Publication Date Title
PH21462A (en) Removal of semiconductor wafers from dicing film
US5476566A (en) Method for thinning a semiconductor wafer
MY118036A (en) Wafer dicing/bonding sheet and process for producing semiconductor device
IE841466L (en) Carrier film for dicing of semiconductor wafers
KR940022799A (ko) 디엠디(dmd)를 절단한 후의 웨이퍼 처리방법
EP0298448A3 (en) Radiation-curable adhesive tape
DE3475994D1 (en) Method of tape-automated bonding
JP2021048407A (ja) ウェハの処理方法
ES2171252T3 (es) Procedimiento para la transferencia de una capa de semiconductor utilizando tecnologia de silicio sobre un aislante (soi).
JPS57128928A (en) Device for pretreating, etching and stripping silicon wafer
EP0134438A3 (en) Vacuum pinchucks for holding semiconductor wafers or other flat electrical components
IT8026865A0 (it) Sistema per il trattamento ed il trasferimento di elementi stratificati sottili (wafer) a semiconduttori.
MY120043A (en) Method of die bonding electronic component and die bonding apparatus therefor
DE3064514D1 (en) Apparatus for mechanically clamping semiconductor wafer against pliable thermally conductive surface
DE3853397D1 (de) Verfahren zum schleierfreien Polieren von Halbleiterscheiben.
TWI795402B (zh) 在處理晶圓中使用的保護片、用於晶圓之處置系統、及晶圓與保護片之組合
JP2003209160A (ja) 半導体ウェハを用いた半導体装置の製造方法
EP0311817A3 (en) Method for removing an ion-implanted organic resin layer during fabrication of semiconductor devices
ES355847A1 (es) Metodo para separar una oblea semiconductora.
EP0967634A4 (en) Method of producing semiconductor wafer
ES413721A1 (es) Un metodo para reparar plaquitas discretas de una pastilla semiconductora cortada en plaquitas.
IT8467515A1 (it) Apparecchio per la cottura di wafer di semiconduttore in guaina di vapore.
GB8521611D0 (en) Integrated circuit silicon die composite
JP2005243910A (ja) 半導体チップの製造方法
TW324835B (en) Method for mountong semiconductor