PH12016000181A1 - Solid-state image sensor and camera - Google Patents

Solid-state image sensor and camera Download PDF

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Publication number
PH12016000181A1
PH12016000181A1 PH12016000181A PH12016000181A PH12016000181A1 PH 12016000181 A1 PH12016000181 A1 PH 12016000181A1 PH 12016000181 A PH12016000181 A PH 12016000181A PH 12016000181 A PH12016000181 A PH 12016000181A PH 12016000181 A1 PH12016000181 A1 PH 12016000181A1
Authority
PH
Philippines
Prior art keywords
microlens
axis
image sensor
solid
array
Prior art date
Application number
PH12016000181A
Other languages
English (en)
Inventor
Kawabata Kazunari
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Publication of PH12016000181A1 publication Critical patent/PH12016000181A1/en

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Classifications

    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50Constructional details
    • H04N23/54Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00Simple or compound lenses
    • G02B3/0006Arrays
    • G02B3/0037Arrays characterized by the distribution or form of lenses
    • G02B3/0043Inhomogeneous or irregular arrays, e.g. varying shape, size, height
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00Simple or compound lenses
    • G02B3/0006Arrays
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00Simple or compound lenses
    • G02B3/0006Arrays
    • G02B3/0037Arrays characterized by the distribution or form of lenses
    • G02B3/0056Arrays characterized by the distribution or form of lenses arranged along two different directions in a plane, e.g. honeycomb arrangement of lenses
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/02Diffusing elements; Afocal elements
    • G02B5/0205Diffusing elements; Afocal elements characterised by the diffusing properties
    • G02B5/021Diffusing elements; Afocal elements characterised by the diffusing properties the diffusion taking place at the element's surface, e.g. by means of surface roughening or microprismatic structures
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50Constructional details
    • H04N23/55Optical parts specially adapted for electronic image sensors; Mounting thereof
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/71Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/806Optical elements or arrangements associated with the image sensors
    • H10F39/8063Microlenses
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00Simple or compound lenses
    • G02B2003/0093Simple or compound lenses characterised by the shape

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
PH12016000181A 2015-05-14 2016-05-11 Solid-state image sensor and camera PH12016000181A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015099511A JP6506614B2 (ja) 2015-05-14 2015-05-14 固体撮像装置およびカメラ

Publications (1)

Publication Number Publication Date
PH12016000181A1 true PH12016000181A1 (en) 2018-01-22

Family

ID=55802223

Family Applications (1)

Application Number Title Priority Date Filing Date
PH12016000181A PH12016000181A1 (en) 2015-05-14 2016-05-11 Solid-state image sensor and camera

Country Status (9)

Country Link
US (1) US10114151B2 (enExample)
EP (1) EP3093887B1 (enExample)
JP (1) JP6506614B2 (enExample)
KR (1) KR20160134502A (enExample)
CN (1) CN106161891B (enExample)
BR (1) BR102016009246A2 (enExample)
PH (1) PH12016000181A1 (enExample)
RU (1) RU2650729C2 (enExample)
SG (1) SG10201603687RA (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10205894B2 (en) 2015-09-11 2019-02-12 Canon Kabushiki Kaisha Imaging device and imaging system
JP6776011B2 (ja) 2016-06-10 2020-10-28 キヤノン株式会社 撮像装置及び撮像システム
JP6688165B2 (ja) 2016-06-10 2020-04-28 キヤノン株式会社 撮像装置及び撮像システム
JP6727938B2 (ja) 2016-06-10 2020-07-22 キヤノン株式会社 撮像装置、撮像装置の制御方法、及び撮像システム
JP7013119B2 (ja) 2016-07-21 2022-01-31 キヤノン株式会社 固体撮像素子、固体撮像素子の製造方法、及び撮像システム
US10212576B2 (en) 2016-09-08 2019-02-19 Samsung Electronics Co., Ltd. Near field communication device
CN109842766B (zh) * 2018-12-28 2021-05-18 上海集成电路研发中心有限公司 一种极坐标图像传感器及其进行图像处理的方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5662401A (en) * 1995-12-13 1997-09-02 Philips Electronics North America Corporation Integrating lens array and image forming method for improved optical efficiency
US7375892B2 (en) * 2003-10-09 2008-05-20 Micron Technology, Inc. Ellipsoidal gapless microlens array and method of fabrication
JP2007335723A (ja) 2006-06-16 2007-12-27 Fujifilm Corp 固体撮像素子用マイクロレンズ及びその製造方法
US20080011936A1 (en) 2006-07-14 2008-01-17 Visera Technologies Company Ltd, Roc Imaging sensor having microlenses of different radii of curvature
JP4941233B2 (ja) 2007-10-31 2012-05-30 大日本印刷株式会社 固体撮像素子およびそれを用いた撮像装置
US7687757B1 (en) * 2009-01-29 2010-03-30 Visera Technologies Company Limited Design of microlens on pixel array
US8102460B2 (en) 2009-11-20 2012-01-24 Fujifilm Corporation Solid-state imaging device
GB2498972A (en) * 2012-02-01 2013-08-07 St Microelectronics Ltd Pixel and microlens array
JP5791664B2 (ja) 2013-06-28 2015-10-07 キヤノン株式会社 光学素子アレイ、及び固体撮像装置
JP2015109314A (ja) 2013-12-03 2015-06-11 株式会社東芝 固体撮像装置
JP2016058538A (ja) 2014-09-09 2016-04-21 キヤノン株式会社 固体撮像装置およびカメラ

Also Published As

Publication number Publication date
RU2016118405A (ru) 2017-11-16
JP2016219469A (ja) 2016-12-22
EP3093887B1 (en) 2018-01-24
CN106161891A (zh) 2016-11-23
RU2650729C2 (ru) 2018-04-17
CN106161891B (zh) 2019-07-30
US20160334550A1 (en) 2016-11-17
EP3093887A1 (en) 2016-11-16
JP6506614B2 (ja) 2019-04-24
SG10201603687RA (en) 2016-12-29
KR20160134502A (ko) 2016-11-23
BR102016009246A2 (pt) 2016-11-16
US10114151B2 (en) 2018-10-30

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