RU2650729C2 - Твердотельный датчик изображений и камера - Google Patents

Твердотельный датчик изображений и камера Download PDF

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Publication number
RU2650729C2
RU2650729C2 RU2016118405A RU2016118405A RU2650729C2 RU 2650729 C2 RU2650729 C2 RU 2650729C2 RU 2016118405 A RU2016118405 A RU 2016118405A RU 2016118405 A RU2016118405 A RU 2016118405A RU 2650729 C2 RU2650729 C2 RU 2650729C2
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RU
Russia
Prior art keywords
microlens
axis
center
image sensor
solid
Prior art date
Application number
RU2016118405A
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English (en)
Russian (ru)
Other versions
RU2016118405A (ru
Inventor
Кадзунари КАВАБАТА
Original Assignee
Кэнон Кабусики Кайся
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Application filed by Кэнон Кабусики Кайся filed Critical Кэнон Кабусики Кайся
Publication of RU2016118405A publication Critical patent/RU2016118405A/ru
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Publication of RU2650729C2 publication Critical patent/RU2650729C2/ru

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50—Constructional details
    • H04N23/54—Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0037—Arrays characterized by the distribution or form of lenses
    • G02B3/0043—Inhomogeneous or irregular arrays, e.g. varying shape, size, height
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0037—Arrays characterized by the distribution or form of lenses
    • G02B3/0056—Arrays characterized by the distribution or form of lenses arranged along two different directions in a plane, e.g. honeycomb arrangement of lenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/02—Diffusing elements; Afocal elements
    • G02B5/0205—Diffusing elements; Afocal elements characterised by the diffusing properties
    • G02B5/021—Diffusing elements; Afocal elements characterised by the diffusing properties the diffusion taking place at the element's surface, e.g. by means of surface roughening or microprismatic structures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50—Constructional details
    • H04N23/55—Optical parts specially adapted for electronic image sensors; Mounting thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B2003/0093—Simple or compound lenses characterised by the shape

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
RU2016118405A 2015-05-14 2016-05-12 Твердотельный датчик изображений и камера RU2650729C2 (ru)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015099511A JP6506614B2 (ja) 2015-05-14 2015-05-14 固体撮像装置およびカメラ
JP2015-099511 2015-05-14

Publications (2)

Publication Number Publication Date
RU2016118405A RU2016118405A (ru) 2017-11-16
RU2650729C2 true RU2650729C2 (ru) 2018-04-17

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
RU2016118405A RU2650729C2 (ru) 2015-05-14 2016-05-12 Твердотельный датчик изображений и камера

Country Status (9)

Country Link
US (1) US10114151B2 (enExample)
EP (1) EP3093887B1 (enExample)
JP (1) JP6506614B2 (enExample)
KR (1) KR20160134502A (enExample)
CN (1) CN106161891B (enExample)
BR (1) BR102016009246A2 (enExample)
PH (1) PH12016000181A1 (enExample)
RU (1) RU2650729C2 (enExample)
SG (1) SG10201603687RA (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10205894B2 (en) 2015-09-11 2019-02-12 Canon Kabushiki Kaisha Imaging device and imaging system
JP6776011B2 (ja) 2016-06-10 2020-10-28 キヤノン株式会社 撮像装置及び撮像システム
JP6688165B2 (ja) 2016-06-10 2020-04-28 キヤノン株式会社 撮像装置及び撮像システム
JP6727938B2 (ja) 2016-06-10 2020-07-22 キヤノン株式会社 撮像装置、撮像装置の制御方法、及び撮像システム
JP7013119B2 (ja) 2016-07-21 2022-01-31 キヤノン株式会社 固体撮像素子、固体撮像素子の製造方法、及び撮像システム
US10212576B2 (en) 2016-09-08 2019-02-19 Samsung Electronics Co., Ltd. Near field communication device
CN109842766B (zh) * 2018-12-28 2021-05-18 上海集成电路研发中心有限公司 一种极坐标图像传感器及其进行图像处理的方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060023312A1 (en) * 2003-10-09 2006-02-02 Boettiger Ulrich C Ellipsoidal gapless microlens array and method of fabrication
US7812302B2 (en) * 2006-07-14 2010-10-12 Visera Technologies Company Limited Imaging sensor having microlenses of different radii of curvature
EP2362257A1 (en) * 2009-11-20 2011-08-31 FUJIFILM Corporation Solid-state imaging device
EP2819172A1 (en) * 2013-06-28 2014-12-31 Canon Kabushiki Kaisha Optical element array and solid-state imaging device including the array

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5662401A (en) * 1995-12-13 1997-09-02 Philips Electronics North America Corporation Integrating lens array and image forming method for improved optical efficiency
JP2007335723A (ja) 2006-06-16 2007-12-27 Fujifilm Corp 固体撮像素子用マイクロレンズ及びその製造方法
JP4941233B2 (ja) 2007-10-31 2012-05-30 大日本印刷株式会社 固体撮像素子およびそれを用いた撮像装置
US7687757B1 (en) * 2009-01-29 2010-03-30 Visera Technologies Company Limited Design of microlens on pixel array
GB2498972A (en) * 2012-02-01 2013-08-07 St Microelectronics Ltd Pixel and microlens array
JP2015109314A (ja) 2013-12-03 2015-06-11 株式会社東芝 固体撮像装置
JP2016058538A (ja) 2014-09-09 2016-04-21 キヤノン株式会社 固体撮像装置およびカメラ

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060023312A1 (en) * 2003-10-09 2006-02-02 Boettiger Ulrich C Ellipsoidal gapless microlens array and method of fabrication
US7812302B2 (en) * 2006-07-14 2010-10-12 Visera Technologies Company Limited Imaging sensor having microlenses of different radii of curvature
EP2362257A1 (en) * 2009-11-20 2011-08-31 FUJIFILM Corporation Solid-state imaging device
EP2819172A1 (en) * 2013-06-28 2014-12-31 Canon Kabushiki Kaisha Optical element array and solid-state imaging device including the array

Also Published As

Publication number Publication date
RU2016118405A (ru) 2017-11-16
JP2016219469A (ja) 2016-12-22
EP3093887B1 (en) 2018-01-24
CN106161891A (zh) 2016-11-23
CN106161891B (zh) 2019-07-30
US20160334550A1 (en) 2016-11-17
EP3093887A1 (en) 2016-11-16
JP6506614B2 (ja) 2019-04-24
SG10201603687RA (en) 2016-12-29
KR20160134502A (ko) 2016-11-23
PH12016000181A1 (en) 2018-01-22
BR102016009246A2 (pt) 2016-11-16
US10114151B2 (en) 2018-10-30

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