BR102016009246A2 - sensor de imagem de estado sólido e câmera - Google Patents

sensor de imagem de estado sólido e câmera

Info

Publication number
BR102016009246A2
BR102016009246A2 BR102016009246A BR102016009246A BR102016009246A2 BR 102016009246 A2 BR102016009246 A2 BR 102016009246A2 BR 102016009246 A BR102016009246 A BR 102016009246A BR 102016009246 A BR102016009246 A BR 102016009246A BR 102016009246 A2 BR102016009246 A2 BR 102016009246A2
Authority
BR
Brazil
Prior art keywords
microlens
center
image sensor
axis
array
Prior art date
Application number
BR102016009246A
Other languages
English (en)
Inventor
Kazunari Kawabata
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Publication of BR102016009246A2 publication Critical patent/BR102016009246A2/pt

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0037—Arrays characterized by the distribution or form of lenses
    • G02B3/0043—Inhomogeneous or irregular arrays, e.g. varying shape, size, height
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50—Constructional details
    • H04N23/54—Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0037—Arrays characterized by the distribution or form of lenses
    • G02B3/0056—Arrays characterized by the distribution or form of lenses arranged along two different directions in a plane, e.g. honeycomb arrangement of lenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/02—Diffusing elements; Afocal elements
    • G02B5/0205—Diffusing elements; Afocal elements characterised by the diffusing properties
    • G02B5/021—Diffusing elements; Afocal elements characterised by the diffusing properties the diffusion taking place at the element's surface, e.g. by means of surface roughening or microprismatic structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50—Constructional details
    • H04N23/55—Optical parts specially adapted for electronic image sensors; Mounting thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B2003/0093—Simple or compound lenses characterised by the shape

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

trata-se de que sensor de imagem que inclui arranjo de microlentes que tem microlentes dispostas para constituir fileiras e colunas. quando o primeiro eixo geométrico paralelo às fileiras e que passa através do centro de arranjo do arranjo de microlentes, e o segundo eixo geométrico paralelo às colunas e que passa através do centro de arranjo são definidos, a microlente posicionada em um círculo virtual que tem o centro de arranjo como centro inclui a primeira microlente posicionada no primeiro ou segundo eixo geométrico, e a segunda microlente posicionada nem no primeiro eixo geométrico nem no segundo eixo geométrico. a primeira e a segunda microlentes têm formato de fundo não circular, e a largura da segunda microlente na segunda direção que passa através da segunda microlente e do centro de arranjo é maior que a largura da primeira microlente na primeira direção que passa através da primeira microlente e do centro de arranjo.
BR102016009246A 2015-05-14 2016-04-26 sensor de imagem de estado sólido e câmera BR102016009246A2 (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015099511A JP6506614B2 (ja) 2015-05-14 2015-05-14 固体撮像装置およびカメラ

Publications (1)

Publication Number Publication Date
BR102016009246A2 true BR102016009246A2 (pt) 2016-11-16

Family

ID=55802223

Family Applications (1)

Application Number Title Priority Date Filing Date
BR102016009246A BR102016009246A2 (pt) 2015-05-14 2016-04-26 sensor de imagem de estado sólido e câmera

Country Status (9)

Country Link
US (1) US10114151B2 (pt)
EP (1) EP3093887B1 (pt)
JP (1) JP6506614B2 (pt)
KR (1) KR20160134502A (pt)
CN (1) CN106161891B (pt)
BR (1) BR102016009246A2 (pt)
PH (1) PH12016000181A1 (pt)
RU (1) RU2650729C2 (pt)
SG (1) SG10201603687RA (pt)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10205894B2 (en) 2015-09-11 2019-02-12 Canon Kabushiki Kaisha Imaging device and imaging system
JP6688165B2 (ja) 2016-06-10 2020-04-28 キヤノン株式会社 撮像装置及び撮像システム
JP6727938B2 (ja) 2016-06-10 2020-07-22 キヤノン株式会社 撮像装置、撮像装置の制御方法、及び撮像システム
JP6776011B2 (ja) 2016-06-10 2020-10-28 キヤノン株式会社 撮像装置及び撮像システム
JP7013119B2 (ja) 2016-07-21 2022-01-31 キヤノン株式会社 固体撮像素子、固体撮像素子の製造方法、及び撮像システム
US10212576B2 (en) 2016-09-08 2019-02-19 Samsung Electronics Co., Ltd. Near field communication device
CN109842766B (zh) * 2018-12-28 2021-05-18 上海集成电路研发中心有限公司 一种极坐标图像传感器及其进行图像处理的方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5662401A (en) * 1995-12-13 1997-09-02 Philips Electronics North America Corporation Integrating lens array and image forming method for improved optical efficiency
US7375892B2 (en) * 2003-10-09 2008-05-20 Micron Technology, Inc. Ellipsoidal gapless microlens array and method of fabrication
JP2007335723A (ja) 2006-06-16 2007-12-27 Fujifilm Corp 固体撮像素子用マイクロレンズ及びその製造方法
US20080011936A1 (en) 2006-07-14 2008-01-17 Visera Technologies Company Ltd, Roc Imaging sensor having microlenses of different radii of curvature
JP4941233B2 (ja) 2007-10-31 2012-05-30 大日本印刷株式会社 固体撮像素子およびそれを用いた撮像装置
US7687757B1 (en) * 2009-01-29 2010-03-30 Visera Technologies Company Limited Design of microlens on pixel array
EP2362257B1 (en) 2009-11-20 2016-08-17 FUJIFILM Corporation Solid-state imaging device
GB2498972A (en) * 2012-02-01 2013-08-07 St Microelectronics Ltd Pixel and microlens array
JP5791664B2 (ja) * 2013-06-28 2015-10-07 キヤノン株式会社 光学素子アレイ、及び固体撮像装置
JP2015109314A (ja) 2013-12-03 2015-06-11 株式会社東芝 固体撮像装置
JP2016058538A (ja) 2014-09-09 2016-04-21 キヤノン株式会社 固体撮像装置およびカメラ

Also Published As

Publication number Publication date
EP3093887B1 (en) 2018-01-24
RU2016118405A (ru) 2017-11-16
PH12016000181A1 (en) 2018-01-22
SG10201603687RA (en) 2016-12-29
CN106161891B (zh) 2019-07-30
US10114151B2 (en) 2018-10-30
RU2650729C2 (ru) 2018-04-17
CN106161891A (zh) 2016-11-23
JP2016219469A (ja) 2016-12-22
JP6506614B2 (ja) 2019-04-24
EP3093887A1 (en) 2016-11-16
US20160334550A1 (en) 2016-11-17
KR20160134502A (ko) 2016-11-23

Similar Documents

Publication Publication Date Title
BR102016009246A2 (pt) sensor de imagem de estado sólido e câmera
WO2015006785A3 (en) Integrated, configurable, sensitivity, analytical, temporal, visual electronic plan system
BR112015004922A2 (pt) mapeamento de pixel, arranjo, e processamento de imagem para arranjos de micro-lentes baseadas em círculo e quadrado para alcançar volume máximo em 3d e movimento multi-direcional
BR112018010211A2 (pt) formulação farmacêutica aquosa compreendendo anticorpo anti-pd-l1 avelumab
CL2018001509A1 (es) Sistema de conexión de viga a columna y soporte resistente al momento que incluye tal sistema.
AR089155A1 (es) Unidad de procesamiento de isomerizacion y transalquilacion de xileno combinada
BR112016009416A2 (pt) Levedura seca ativa geneticamente modificada de grande escala
CL2013003560S1 (es) Motocicleta que en su parte delantera inferior presenta dos tubos cilindricos paralelos de inclinacion oblicua dirigida hacia atras, cuyos extremos inferiores hacia abajo y borde inferior dividido en dos tramos rectos que forman un vertice central equidistante del borde superior del foco frontal.
CL2019001574A1 (es) Una formulación plaguicida sólida estable, autodispersable, de baja espumación.
ITUB20160106A1 (it) Formulazione granulare fertilizzante in grado di aumentare la capacita´ di ritenzione idrica del terreno, procedimento per la sua preparazione e suoi usi.
BR112016017152A2 (pt) Monólitos com compostos de reconhecimento fixados, matrizes dos mesmos e usos dos mesmos
BR112017018756A2 (pt) sistema de célula de combustível de recirculação integrada.
HRP20161767T1 (hr) Višenamjenski uređaj za prijenos zračenja
BR112015027366A2 (pt) artigo de hidrocoloide descontínuo, artigo médico para contato com a pele e método para fabricação de um artigo de hidrocoloide descontínuo
ES1154011Y (es) Sistema y dispositivo de seguridad activa para prevenir accidentes por alcance en las operaciones de tala de arboles
CL2019000042A1 (es) Composiciones farmacéuticas
BR112017012400A2 (pt) processo para fabricação de partículas de resinato de fenilefrina; partículas de resinato de fenilefrina e uso de partículas de resinato de fenilefrina em formulações farmacêuticas
EA201891256A1 (ru) Индивидуальная активация в подгруппе источников
WO2015023277A3 (en) Heterogeneous multicore processor with graphene-based transistors
Porter et al. ew Testament
CL2017002653A1 (es) Procedimiento y reactor para fijar arsénico.
GB2564622B (en) Fuel cell system with combined passive and active sorbent beds
BR102012030721A8 (pt) ferramentas para desenhar cônicas e processo de utilização
MX2016006269A (es) Soporte articulado en un asiento de vehiculo.
Pribilsky Technoscience in Las Américas: STS Engagements in Latin American Anthropology.

Legal Events

Date Code Title Description
B03A Publication of a patent application or of a certificate of addition of invention [chapter 3.1 patent gazette]
B11A Dismissal acc. art.33 of ipl - examination not requested within 36 months of filing
B11Y Definitive dismissal - extension of time limit for request of examination expired [chapter 11.1.1 patent gazette]