BR102016009246A2 - sensor de imagem de estado sólido e câmera - Google Patents

sensor de imagem de estado sólido e câmera

Info

Publication number
BR102016009246A2
BR102016009246A2 BR102016009246A BR102016009246A BR102016009246A2 BR 102016009246 A2 BR102016009246 A2 BR 102016009246A2 BR 102016009246 A BR102016009246 A BR 102016009246A BR 102016009246 A BR102016009246 A BR 102016009246A BR 102016009246 A2 BR102016009246 A2 BR 102016009246A2
Authority
BR
Brazil
Prior art keywords
microlens
center
image sensor
axis
array
Prior art date
Application number
BR102016009246A
Other languages
English (en)
Portuguese (pt)
Inventor
Kazunari Kawabata
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Publication of BR102016009246A2 publication Critical patent/BR102016009246A2/pt

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00Simple or compound lenses
    • G02B3/0006Arrays
    • G02B3/0037Arrays characterized by the distribution or form of lenses
    • G02B3/0043Inhomogeneous or irregular arrays, e.g. varying shape, size, height
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50Constructional details
    • H04N23/54Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00Simple or compound lenses
    • G02B3/0006Arrays
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00Simple or compound lenses
    • G02B3/0006Arrays
    • G02B3/0037Arrays characterized by the distribution or form of lenses
    • G02B3/0056Arrays characterized by the distribution or form of lenses arranged along two different directions in a plane, e.g. honeycomb arrangement of lenses
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/02Diffusing elements; Afocal elements
    • G02B5/0205Diffusing elements; Afocal elements characterised by the diffusing properties
    • G02B5/021Diffusing elements; Afocal elements characterised by the diffusing properties the diffusion taking place at the element's surface, e.g. by means of surface roughening or microprismatic structures
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50Constructional details
    • H04N23/55Optical parts specially adapted for electronic image sensors; Mounting thereof
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/71Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/806Optical elements or arrangements associated with the image sensors
    • H10F39/8063Microlenses
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00Simple or compound lenses
    • G02B2003/0093Simple or compound lenses characterised by the shape

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
BR102016009246A 2015-05-14 2016-04-26 sensor de imagem de estado sólido e câmera BR102016009246A2 (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015099511A JP6506614B2 (ja) 2015-05-14 2015-05-14 固体撮像装置およびカメラ

Publications (1)

Publication Number Publication Date
BR102016009246A2 true BR102016009246A2 (pt) 2016-11-16

Family

ID=55802223

Family Applications (1)

Application Number Title Priority Date Filing Date
BR102016009246A BR102016009246A2 (pt) 2015-05-14 2016-04-26 sensor de imagem de estado sólido e câmera

Country Status (9)

Country Link
US (1) US10114151B2 (enExample)
EP (1) EP3093887B1 (enExample)
JP (1) JP6506614B2 (enExample)
KR (1) KR20160134502A (enExample)
CN (1) CN106161891B (enExample)
BR (1) BR102016009246A2 (enExample)
PH (1) PH12016000181A1 (enExample)
RU (1) RU2650729C2 (enExample)
SG (1) SG10201603687RA (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10205894B2 (en) 2015-09-11 2019-02-12 Canon Kabushiki Kaisha Imaging device and imaging system
JP6776011B2 (ja) 2016-06-10 2020-10-28 キヤノン株式会社 撮像装置及び撮像システム
JP6688165B2 (ja) 2016-06-10 2020-04-28 キヤノン株式会社 撮像装置及び撮像システム
JP6727938B2 (ja) 2016-06-10 2020-07-22 キヤノン株式会社 撮像装置、撮像装置の制御方法、及び撮像システム
JP7013119B2 (ja) 2016-07-21 2022-01-31 キヤノン株式会社 固体撮像素子、固体撮像素子の製造方法、及び撮像システム
US10212576B2 (en) 2016-09-08 2019-02-19 Samsung Electronics Co., Ltd. Near field communication device
CN109842766B (zh) * 2018-12-28 2021-05-18 上海集成电路研发中心有限公司 一种极坐标图像传感器及其进行图像处理的方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5662401A (en) * 1995-12-13 1997-09-02 Philips Electronics North America Corporation Integrating lens array and image forming method for improved optical efficiency
US7375892B2 (en) * 2003-10-09 2008-05-20 Micron Technology, Inc. Ellipsoidal gapless microlens array and method of fabrication
JP2007335723A (ja) 2006-06-16 2007-12-27 Fujifilm Corp 固体撮像素子用マイクロレンズ及びその製造方法
US20080011936A1 (en) 2006-07-14 2008-01-17 Visera Technologies Company Ltd, Roc Imaging sensor having microlenses of different radii of curvature
JP4941233B2 (ja) 2007-10-31 2012-05-30 大日本印刷株式会社 固体撮像素子およびそれを用いた撮像装置
US7687757B1 (en) * 2009-01-29 2010-03-30 Visera Technologies Company Limited Design of microlens on pixel array
US8102460B2 (en) 2009-11-20 2012-01-24 Fujifilm Corporation Solid-state imaging device
GB2498972A (en) * 2012-02-01 2013-08-07 St Microelectronics Ltd Pixel and microlens array
JP5791664B2 (ja) 2013-06-28 2015-10-07 キヤノン株式会社 光学素子アレイ、及び固体撮像装置
JP2015109314A (ja) 2013-12-03 2015-06-11 株式会社東芝 固体撮像装置
JP2016058538A (ja) 2014-09-09 2016-04-21 キヤノン株式会社 固体撮像装置およびカメラ

Also Published As

Publication number Publication date
RU2016118405A (ru) 2017-11-16
JP2016219469A (ja) 2016-12-22
EP3093887B1 (en) 2018-01-24
CN106161891A (zh) 2016-11-23
RU2650729C2 (ru) 2018-04-17
CN106161891B (zh) 2019-07-30
US20160334550A1 (en) 2016-11-17
EP3093887A1 (en) 2016-11-16
JP6506614B2 (ja) 2019-04-24
SG10201603687RA (en) 2016-12-29
KR20160134502A (ko) 2016-11-23
PH12016000181A1 (en) 2018-01-22
US10114151B2 (en) 2018-10-30

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Legal Events

Date Code Title Description
B03A Publication of a patent application or of a certificate of addition of invention [chapter 3.1 patent gazette]
B11A Dismissal acc. art.33 of ipl - examination not requested within 36 months of filing
B11Y Definitive dismissal - extension of time limit for request of examination expired [chapter 11.1.1 patent gazette]