NO763550L - - Google Patents
Info
- Publication number
- NO763550L NO763550L NO763550A NO763550A NO763550L NO 763550 L NO763550 L NO 763550L NO 763550 A NO763550 A NO 763550A NO 763550 A NO763550 A NO 763550A NO 763550 L NO763550 L NO 763550L
- Authority
- NO
- Norway
- Prior art keywords
- halogenosilanes
- trichlorosilane
- temperature
- halogenosilane
- purified
- Prior art date
Links
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 22
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims description 20
- 239000005052 trichlorosilane Substances 0.000 claims description 20
- 238000009835 boiling Methods 0.000 claims description 17
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 10
- 229910052796 boron Inorganic materials 0.000 claims description 9
- 150000004760 silicates Chemical class 0.000 claims description 9
- 239000012535 impurity Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 238000000746 purification Methods 0.000 claims description 5
- 238000004821 distillation Methods 0.000 claims description 4
- 239000000741 silica gel Substances 0.000 claims description 4
- 229910002027 silica gel Inorganic materials 0.000 claims description 4
- 239000007858 starting material Substances 0.000 claims description 4
- 239000007791 liquid phase Substances 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 description 16
- 239000010703 silicon Substances 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 150000001638 boron Chemical class 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 150000001639 boron compounds Chemical class 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000001179 sorption measurement Methods 0.000 description 4
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 239000000499 gel Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- -1 silicon halide Chemical class 0.000 description 3
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000007062 hydrolysis Effects 0.000 description 2
- 238000006460 hydrolysis reaction Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 150000003377 silicon compounds Chemical class 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 239000005909 Kieselgur Substances 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 230000009918 complex formation Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005188 flotation Methods 0.000 description 1
- 238000004508 fractional distillation Methods 0.000 description 1
- 150000002366 halogen compounds Chemical class 0.000 description 1
- 239000011551 heat transfer agent Substances 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/04—Hydrides of silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G17/00—Compounds of germanium
- C01G17/04—Halides of germanium
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2546957A DE2546957C3 (de) | 1975-10-20 | 1975-10-20 | Verfahren zur Reinigung von Halogensilanen |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NO763550L true NO763550L (OSRAM) | 1977-04-21 |
Family
ID=5959600
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO763550A NO763550L (OSRAM) | 1975-10-20 | 1976-10-19 |
Country Status (12)
| Country | Link |
|---|---|
| US (1) | US4112057A (OSRAM) |
| JP (1) | JPS5250996A (OSRAM) |
| BE (1) | BE847392A (OSRAM) |
| CA (1) | CA1079679A (OSRAM) |
| DE (1) | DE2546957C3 (OSRAM) |
| DK (1) | DK426476A (OSRAM) |
| FR (1) | FR2328659A1 (OSRAM) |
| GB (1) | GB1556830A (OSRAM) |
| IT (1) | IT1069277B (OSRAM) |
| NL (1) | NL7610374A (OSRAM) |
| NO (1) | NO763550L (OSRAM) |
| SE (1) | SE7611604L (OSRAM) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0054650B1 (de) * | 1980-12-24 | 1986-01-29 | Hüls Troisdorf Aktiengesellschaft | Verfahren zum Reinigen von Chlorsilanen |
| US4755370A (en) * | 1982-03-18 | 1988-07-05 | General Electric Company | Purification of silicon halides |
| EP0105328A4 (en) * | 1982-03-18 | 1984-09-19 | Gen Electric | CLEANING OF SILICONE HALIDES. |
| CA1207127A (en) | 1982-09-29 | 1986-07-08 | Dow Corning Corporation | Purification of chlorosilanes |
| US4713230A (en) * | 1982-09-29 | 1987-12-15 | Dow Corning Corporation | Purification of chlorosilanes |
| JP2532313B2 (ja) * | 1991-06-07 | 1996-09-11 | 株式会社 半導体エネルギー研究所 | 高圧容器 |
| JP2564731B2 (ja) * | 1992-05-12 | 1996-12-18 | 株式会社 半導体エネルギー研究所 | 反応性気体が充填された高圧容器の作製方法 |
| DE102007014107A1 (de) * | 2007-03-21 | 2008-09-25 | Evonik Degussa Gmbh | Aufarbeitung borhaltiger Chlorsilanströme |
| US20090060819A1 (en) * | 2007-08-29 | 2009-03-05 | Bill Jr Jon M | Process for producing trichlorosilane |
| DE112008002299T5 (de) | 2007-08-29 | 2010-07-22 | Dynamic Engineering, Inc., Sturgis | Verfahren zur Herstellung von Trichlorsilan |
| JP4714197B2 (ja) | 2007-09-05 | 2011-06-29 | 信越化学工業株式会社 | トリクロロシランの製造方法および多結晶シリコンの製造方法 |
| JP4714198B2 (ja) | 2007-09-05 | 2011-06-29 | 信越化学工業株式会社 | クロロシラン類の精製方法 |
| JP4714196B2 (ja) | 2007-09-05 | 2011-06-29 | 信越化学工業株式会社 | トリクロロシランの製造方法および多結晶シリコンの製造方法 |
| JP4659798B2 (ja) | 2007-09-05 | 2011-03-30 | 信越化学工業株式会社 | トリクロロシランの製造方法 |
| DE102007050199A1 (de) * | 2007-10-20 | 2009-04-23 | Evonik Degussa Gmbh | Entfernung von Fremdmetallen aus anorganischen Silanen |
| DE102008002537A1 (de) | 2008-06-19 | 2009-12-24 | Evonik Degussa Gmbh | Verfahren zur Entfernung von Bor enthaltenden Verunreinigungen aus Halogensilanen sowie Anlage zur Durchführung des Verfahrens |
| RU2394762C2 (ru) * | 2008-07-14 | 2010-07-20 | Общество с ограниченной ответственностью "Институт по проектированию производств органического синтеза" | Способ получения трихлорсилана |
| DE102008041334A1 (de) | 2008-08-19 | 2010-02-25 | Evonik Degussa Gmbh | Herstellung von Silizium durch Umsetzung von Siliziumoxid und Siliziumcarbid gegebenenfalls in Gegenwart einer zweiten Kohlenstoffquelle |
| US20110262336A1 (en) | 2008-09-30 | 2011-10-27 | Hartwig Rauleder | Production of solar-grade silicon from silicon dioxide |
| US20100124525A1 (en) * | 2008-11-19 | 2010-05-20 | Kuyen Li | ZERO-HEAT-BURDEN FLUIDIZED BED REACTOR FOR HYDRO-CHLORINATION OF SiCl4 and M.G.-Si |
| KR20100073304A (ko) * | 2008-12-23 | 2010-07-01 | 삼성전자주식회사 | 대기정화장치 및 그의 대기정화방법 |
| JP5542026B2 (ja) | 2010-10-27 | 2014-07-09 | 信越化学工業株式会社 | クロロシラン類の精製方法 |
| KR101911129B1 (ko) * | 2011-12-16 | 2018-10-23 | 도아고세이가부시키가이샤 | 고순도 클로로폴리실란의 제조방법 |
| US9669378B2 (en) * | 2014-03-18 | 2017-06-06 | Matheson Tri-Gas, Inc. | Reduction of SiCl4 in the presence of BCl3 |
| JP7512388B2 (ja) | 2019-11-27 | 2024-07-08 | ワッカー ケミー アクチエンゲゼルシャフト | クロロシラン混合物から不純物を除去する方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1028543B (de) * | 1954-12-17 | 1958-04-24 | Siemens Ag | Verfahren zum Reinigen von mit Wasser Gel bildenden Halogeniden, insbesondere des Germaniums oder Siliciums, vorzugsweise fuer die Herstellung von Halbleiterstoffen |
| US2812235A (en) * | 1955-09-16 | 1957-11-05 | Bell Telephone Labor Inc | Method of purifying volatile compounds of germanium and silicon |
| DE1073460B (de) * | 1958-01-11 | 1960-01-21 | LICENTIA Patent-Verwaltungs-G.m.b.H., Frankfurt/M | Verfahren zum Reinigen von Silan oder chlorierten Silanen |
| DE1134973B (de) * | 1958-07-15 | 1962-08-23 | Wacker Chemie Gmbh | Verfahren zur Herstellung von hochreinen Siliciumhalogeniden |
| GB877477A (en) * | 1958-10-28 | 1961-09-13 | Westinghouse Electric Corp | Improvements in or relating to the purification of halosilanes |
| US3540861A (en) * | 1968-02-07 | 1970-11-17 | Union Carbide Corp | Purification of silicon compounds |
-
1975
- 1975-10-20 DE DE2546957A patent/DE2546957C3/de not_active Expired
-
1976
- 1976-09-09 GB GB37432/76A patent/GB1556830A/en not_active Expired
- 1976-09-17 NL NL7610374A patent/NL7610374A/xx not_active Application Discontinuation
- 1976-09-22 FR FR7628523A patent/FR2328659A1/fr active Granted
- 1976-09-22 DK DK426476A patent/DK426476A/da not_active Application Discontinuation
- 1976-10-14 US US05/732,269 patent/US4112057A/en not_active Expired - Lifetime
- 1976-10-18 CA CA263,603A patent/CA1079679A/en not_active Expired
- 1976-10-18 IT IT51774/76A patent/IT1069277B/it active
- 1976-10-18 BE BE171593A patent/BE847392A/xx unknown
- 1976-10-19 NO NO763550A patent/NO763550L/no unknown
- 1976-10-19 SE SE7611604A patent/SE7611604L/xx unknown
- 1976-10-20 JP JP51126009A patent/JPS5250996A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DK426476A (da) | 1977-04-21 |
| JPS5632247B2 (OSRAM) | 1981-07-27 |
| FR2328659B1 (OSRAM) | 1978-12-15 |
| US4112057A (en) | 1978-09-05 |
| SE7611604L (sv) | 1977-04-21 |
| DE2546957B2 (de) | 1980-02-21 |
| NL7610374A (nl) | 1977-04-22 |
| CA1079679A (en) | 1980-06-17 |
| DE2546957A1 (de) | 1977-04-21 |
| IT1069277B (it) | 1985-03-25 |
| GB1556830A (en) | 1979-11-28 |
| BE847392A (fr) | 1977-04-18 |
| JPS5250996A (en) | 1977-04-23 |
| DE2546957C3 (de) | 1980-10-23 |
| FR2328659A1 (fr) | 1977-05-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| NO763550L (OSRAM) | ||
| JP2863774B2 (ja) | Ｃｖｄ法による半導体シリコンの蒸着法 | |
| CN101815672B (zh) | 制备高纯度六氯乙硅烷的方法 | |
| US7879198B2 (en) | Processes for the purification of trichlorosilane and silicon tetrachloride | |
| TWI580710B (zh) | 鹵化聚矽烷的製備方法 | |
| US20100296994A1 (en) | Catalyst and method for dismutation of halosilanes containing hydrogen | |
| JPS6379718A (ja) | 高純度シリコンの製造方法 | |
| GB855913A (en) | Improvements in or relating to the manufacture of silicon | |
| US4755370A (en) | Purification of silicon halides | |
| WO2015059919A1 (ja) | 多結晶シリコンの製造方法 | |
| US3386892A (en) | Purification of fluosilicic acid solution by distillation with phosphoric acid solution | |
| US20040042949A1 (en) | Method for removing aluminum from chlorosilanes | |
| JP5507498B2 (ja) | クロロシラン類の精製方法 | |
| US4259309A (en) | Method for obtaining gaseous hydrogen chloride from dilute aqueous hydrochloric acid | |
| US7906094B2 (en) | Method for producing a high purity trisilane product from the pyrolysis of disilane | |
| JPH07315829A (ja) | ベントガス流中の塩化物の回収法 | |
| EP2493900A1 (de) | Verfahren zur herstellung von organosilanen | |
| JPH026318A (ja) | ケイ素の気相析出で生じた液状またはガス状物質からｎ型ドーピング不純物を除去する方法 | |
| US5545743A (en) | Process for heat-fractionation of organosilanes | |
| US2805982A (en) | Preparation of boron trifluoride | |
| US5175330A (en) | Process for the recovery of hydrogen chloride and monomeric alkoxysilanes from mixtures of chloride-containing silicon compounds | |
| JP2015113250A (ja) | テトラクロロシランの精製方法 | |
| EP0105328A1 (en) | Purification of silicon halides | |
| US3359186A (en) | Distillation of dimethylchlorosilane in presence of added hic | |
| US2797980A (en) | Process of recovering the chlorides of iron, phosphorus, silicon, and titanium from ferro-phosphorus |