NO317080B1 - Silisiumnitriddigler som er bestandige mot silisiumsmelter og fremgangsmate for fremstilling av slike digler - Google Patents

Silisiumnitriddigler som er bestandige mot silisiumsmelter og fremgangsmate for fremstilling av slike digler Download PDF

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Publication number
NO317080B1
NO317080B1 NO20023865A NO20023865A NO317080B1 NO 317080 B1 NO317080 B1 NO 317080B1 NO 20023865 A NO20023865 A NO 20023865A NO 20023865 A NO20023865 A NO 20023865A NO 317080 B1 NO317080 B1 NO 317080B1
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NO
Norway
Prior art keywords
crucibles
silicon
crucible
particles
si3n4
Prior art date
Application number
NO20023865A
Other languages
English (en)
Norwegian (no)
Other versions
NO20023865D0 (no
Inventor
Espen Olsen
Havard Sorheim
Arve Solheim
Original Assignee
Crusin As
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Crusin As filed Critical Crusin As
Priority to NO20023865A priority Critical patent/NO317080B1/no
Publication of NO20023865D0 publication Critical patent/NO20023865D0/no
Priority to JP2004528963A priority patent/JP4724419B2/ja
Priority to PCT/NO2003/000274 priority patent/WO2004016835A1/fr
Priority to CA002492176A priority patent/CA2492176C/fr
Priority to AU2003263674A priority patent/AU2003263674A1/en
Priority to US10/520,834 priority patent/US7422631B2/en
Priority to CNB038194856A priority patent/CN1302158C/zh
Priority to EP03788186A priority patent/EP1534881A1/fr
Publication of NO317080B1 publication Critical patent/NO317080B1/no

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/584—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
    • C04B35/591—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride obtained by reaction sintering
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B38/00—Porous mortars, concrete, artificial stone or ceramic ware; Preparation thereof
    • C04B38/0051—Porous mortars, concrete, artificial stone or ceramic ware; Preparation thereof characterised by the pore size, pore shape or kind of porosity
    • C04B38/0058—Porous mortars, concrete, artificial stone or ceramic ware; Preparation thereof characterised by the pore size, pore shape or kind of porosity open porosity
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
    • C04B2111/00474—Uses not provided for elsewhere in C04B2111/00
    • C04B2111/00939—Uses not provided for elsewhere in C04B2111/00 for the fabrication of moulds or cores
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/42—Non metallic elements added as constituents or additives, e.g. sulfur, phosphor, selenium or tellurium
    • C04B2235/428—Silicon
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/46—Gases other than oxygen used as reactant, e.g. nitrogen used to make a nitride phase
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74—Physical characteristics
    • C04B2235/77—Density
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Structural Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Ceramic Products (AREA)
NO20023865A 2002-08-15 2002-08-15 Silisiumnitriddigler som er bestandige mot silisiumsmelter og fremgangsmate for fremstilling av slike digler NO317080B1 (no)

Priority Applications (8)

Application Number Priority Date Filing Date Title
NO20023865A NO317080B1 (no) 2002-08-15 2002-08-15 Silisiumnitriddigler som er bestandige mot silisiumsmelter og fremgangsmate for fremstilling av slike digler
JP2004528963A JP4724419B2 (ja) 2002-08-15 2003-08-13 窒化ケイ素の成形部品及び該成形部品の製造方法
PCT/NO2003/000274 WO2004016835A1 (fr) 2002-08-15 2003-08-13 Pieces moulees en nitrure de silicium et procede de fabrication desdites pieces
CA002492176A CA2492176C (fr) 2002-08-15 2003-08-13 Pieces moulees en nitrure de silicium et procede de fabrication desdites pieces
AU2003263674A AU2003263674A1 (en) 2002-08-15 2003-08-13 Mould parts of silicon nitride and method for producing such mould parts
US10/520,834 US7422631B2 (en) 2002-08-15 2003-08-13 Mould parts of silicon nitride and method for producing such mould parts
CNB038194856A CN1302158C (zh) 2002-08-15 2003-08-13 氮化硅的模型配件和制造这种模型配件的方法
EP03788186A EP1534881A1 (fr) 2002-08-15 2003-08-13 Pieces moulees en nitrure de silicium et procede de fabrication desdites pieces

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NO20023865A NO317080B1 (no) 2002-08-15 2002-08-15 Silisiumnitriddigler som er bestandige mot silisiumsmelter og fremgangsmate for fremstilling av slike digler

Publications (2)

Publication Number Publication Date
NO20023865D0 NO20023865D0 (no) 2002-08-15
NO317080B1 true NO317080B1 (no) 2004-08-02

Family

ID=19913899

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20023865A NO317080B1 (no) 2002-08-15 2002-08-15 Silisiumnitriddigler som er bestandige mot silisiumsmelter og fremgangsmate for fremstilling av slike digler

Country Status (8)

Country Link
US (1) US7422631B2 (fr)
EP (1) EP1534881A1 (fr)
JP (1) JP4724419B2 (fr)
CN (1) CN1302158C (fr)
AU (1) AU2003263674A1 (fr)
CA (1) CA2492176C (fr)
NO (1) NO317080B1 (fr)
WO (1) WO2004016835A1 (fr)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1811064A1 (fr) 2006-01-12 2007-07-25 Vesuvius Crucible Company Creuset pour le traitement de silicium à l'état fondu
WO2007148985A1 (fr) * 2006-06-23 2007-12-27 Rec Scanwafer As Dispositif et procédé pour la fabrication de silicium de qualité semi-conducteur
US20090208400A1 (en) * 2006-06-23 2009-08-20 Stein Julsrud Method and crucible for direct solidification of semiconductor grade multi-crystalline silicon ingots
CN101495680A (zh) * 2006-06-23 2009-07-29 Rec斯坎沃佛股份有限公司 可重复使用的坩埚及其制造方法
US7872676B2 (en) * 2007-07-13 2011-01-18 Micron Technology, Inc. Methods, systems, and devices for offset compensation in CMOC imagers
DE102009048741A1 (de) 2009-03-20 2010-09-30 Access E.V. Tiegel zum Schmelzen und Kristallisieren eines Metalls, eines Halbleiters oder einer Metalllegierung, Bauteil für einen Tiegelgrundkörper eines Tiegels und Verfahren zum Herstellen eines Bauteils
NO334256B1 (no) * 2009-04-23 2014-01-20 Saint Gobain Ind Keramik Rodental Gmbh Fremgangsmåte for fremstilling av keramisk formdel av reaksjonsbundet silisiumnitrid, apparatur samt anvendelse derav
CN102725443A (zh) * 2009-12-22 2012-10-10 圣戈班工业陶瓷罗登塔尔有限责任公司 氮化硅基坩埚
DE102010000687B4 (de) * 2010-01-05 2012-10-18 Solarworld Innovations Gmbh Tiegel und Verfahren zur Herstellung von Silizium-Blöcken
US20110210470A1 (en) * 2010-02-26 2011-09-01 6N Silicon Inc. Crucible and method for furnace capacity utilization
PL2655705T3 (pl) 2010-12-22 2015-08-31 Steuler Solar Gmbh Tygle
CN102363318A (zh) * 2011-06-30 2012-02-29 德清县建明坩埚厂 用于坩埚成型机的下模
CN102409394B (zh) * 2011-12-05 2015-05-20 苏州纳迪微电子有限公司 多晶硅铸锭用坩埚及其制备方法
DE102012201116B4 (de) 2012-01-26 2018-05-03 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Aufreinigung eines Tiegels
DE102012101214B4 (de) * 2012-02-15 2016-09-01 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Wiederverwendbarer Tiegel aus einer Siliziumnitrid-Keramik, Verfahren zu dessen Herstellung, dessen Verwendung sowie Verfahren zur Herstellung eines mono- oder multikristallinen Halbmetall-Ingots oder Halbmetall-Körpers aus einer Schmelze
FR2989680B1 (fr) * 2012-04-24 2014-04-18 Saint Gobain Ct Recherches Procede de fabrication d'un creuset en nitrure de silicium
FR2997419A1 (fr) 2012-10-31 2014-05-02 Saint Gobain Ct Recherches Creuset incorporant un revetement sialon.
DE102013109024B4 (de) 2013-08-21 2019-12-05 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Wiederverwendbarer Tiegel aus einer Siliziumnitrid-Keramik, Verfahren zu dessen Herstellung, Verwendung des Tiegels, sowie Verfahren zur Herstellung eines mono- oder multikristallinen Silizium-Ingots und eines Silizium-Einkristalls aus einer Schmelze
CN104625071B (zh) * 2015-01-28 2016-09-28 东莞劲胜精密组件股份有限公司 一种粉末注射成型表面孔隙材料的制备方法
DE102018210286A1 (de) 2018-06-25 2020-01-02 Siltronic Ag Verfahren und Vorrichtung zum Ziehen eines Einkristalls und Halbleiterscheibe aus Silizium
FR3131295B1 (fr) 2021-12-23 2023-12-29 Saint Gobain Ct Recherches support de cuisson de poudre alcaline avec revêtement de porosité contrôlée

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US4515755A (en) 1981-05-11 1985-05-07 Toshiba Ceramics Co., Ltd. Apparatus for producing a silicon single crystal from a silicon melt
JPS5950626B2 (ja) * 1981-05-11 1984-12-10 東芝セラミツクス株式会社 シリコン単結晶引上げ用容器
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JPS57200269A (en) * 1981-06-05 1982-12-08 Daido Steel Co Ltd Manufacture of silicon nitrogen reaction sintered body
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JPS61236604A (ja) * 1985-04-11 1986-10-21 Toshiba Ceramics Co Ltd β−Ｓｉ↓３Ｎ↓４の合成方法
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WO2001047833A1 (fr) 1999-12-24 2001-07-05 Asahi Glass Company, Limited Filtre au nitrure de silicium et procede de fabrication correspondant
DE10025198A1 (de) * 2000-05-20 2001-11-29 Drache Umwelttechnik Gmbh & Co Verfahren zur Herstellung von porösen Formkörper aus polykristallinem Siliciumnitrid
US20040211496A1 (en) 2003-04-25 2004-10-28 Crystal Systems, Inc. Reusable crucible for silicon ingot growth

Also Published As

Publication number Publication date
CA2492176A1 (fr) 2004-02-26
JP4724419B2 (ja) 2011-07-13
CA2492176C (fr) 2008-05-13
WO2004016835A1 (fr) 2004-02-26
NO20023865D0 (no) 2002-08-15
US7422631B2 (en) 2008-09-09
CN1675412A (zh) 2005-09-28
JP2005535552A (ja) 2005-11-24
US20050118461A1 (en) 2005-06-02
EP1534881A1 (fr) 2005-06-01
AU2003263674A1 (en) 2004-03-03
CN1302158C (zh) 2007-02-28

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