NO20080047L - Blanding for doping av halvledere - Google Patents

Blanding for doping av halvledere

Info

Publication number
NO20080047L
NO20080047L NO20080047A NO20080047A NO20080047L NO 20080047 L NO20080047 L NO 20080047L NO 20080047 A NO20080047 A NO 20080047A NO 20080047 A NO20080047 A NO 20080047A NO 20080047 L NO20080047 L NO 20080047L
Authority
NO
Norway
Prior art keywords
semiconductor doping
doping mixture
mixture
composition
subjected
Prior art date
Application number
NO20080047A
Other languages
English (en)
Norwegian (no)
Inventor
Daniel Biro
Catherine Voyer
Harald Wanka
Jorg Koriath
Original Assignee
Centrotherm Photovoltaics Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centrotherm Photovoltaics Ag filed Critical Centrotherm Photovoltaics Ag
Publication of NO20080047L publication Critical patent/NO20080047L/no

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2225—Diffusion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Ceramic Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Cosmetics (AREA)
  • Detergent Compositions (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
NO20080047A 2005-06-06 2008-01-03 Blanding for doping av halvledere NO20080047L (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102005025933A DE102005025933B3 (de) 2005-06-06 2005-06-06 Dotiergermisch für die Dotierung von Halbleitern
PCT/EP2006/005195 WO2006131251A1 (de) 2005-06-06 2006-05-31 Dotiergemisch für die dotierung von halbleitern

Publications (1)

Publication Number Publication Date
NO20080047L true NO20080047L (no) 2008-01-03

Family

ID=36599650

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20080047A NO20080047L (no) 2005-06-06 2008-01-03 Blanding for doping av halvledere

Country Status (9)

Country Link
US (1) US8043946B2 (ko)
EP (1) EP1888822A1 (ko)
JP (1) JP2008543097A (ko)
KR (1) KR20080033934A (ko)
AU (1) AU2006257042B2 (ko)
DE (1) DE102005025933B3 (ko)
NO (1) NO20080047L (ko)
TW (1) TW200703473A (ko)
WO (1) WO2006131251A1 (ko)

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US20090239363A1 (en) * 2008-03-24 2009-09-24 Honeywell International, Inc. Methods for forming doped regions in semiconductor substrates using non-contact printing processes and dopant-comprising inks for forming such doped regions using non-contact printing processes
US8053867B2 (en) * 2008-08-20 2011-11-08 Honeywell International Inc. Phosphorous-comprising dopants and methods for forming phosphorous-doped regions in semiconductor substrates using phosphorous-comprising dopants
DE102008044485A1 (de) 2008-08-28 2010-04-01 Schott Solar Ag Verfahren und Anordnung zum Herstellen einer Funktionsschicht auf einem Halbleiterbauelement
US7951696B2 (en) 2008-09-30 2011-05-31 Honeywell International Inc. Methods for simultaneously forming N-type and P-type doped regions using non-contact printing processes
US8518170B2 (en) 2008-12-29 2013-08-27 Honeywell International Inc. Boron-comprising inks for forming boron-doped regions in semiconductor substrates using non-contact printing processes and methods for fabricating such boron-comprising inks
US7820532B2 (en) * 2008-12-29 2010-10-26 Honeywell International Inc. Methods for simultaneously forming doped regions having different conductivity-determining type element profiles
US8324089B2 (en) 2009-07-23 2012-12-04 Honeywell International Inc. Compositions for forming doped regions in semiconductor substrates, methods for fabricating such compositions, and methods for forming doped regions using such compositions
KR101162119B1 (ko) 2009-10-23 2012-07-04 주식회사 효성 태양전지의 선택적 에미터 형성 방법 및 그 장치
US8691675B2 (en) * 2009-11-25 2014-04-08 International Business Machines Corporation Vapor phase deposition processes for doping silicon
US8858843B2 (en) * 2010-12-14 2014-10-14 Innovalight, Inc. High fidelity doping paste and methods thereof
US8629294B2 (en) 2011-08-25 2014-01-14 Honeywell International Inc. Borate esters, boron-comprising dopants, and methods of fabricating boron-comprising dopants
DE102011053085A1 (de) * 2011-08-29 2013-02-28 Schott Solar Ag Verfahren zur Herstellung einer Solarzelle
US8975170B2 (en) 2011-10-24 2015-03-10 Honeywell International Inc. Dopant ink compositions for forming doped regions in semiconductor substrates, and methods for fabricating dopant ink compositions
US9929014B2 (en) * 2013-11-27 2018-03-27 Entegris, Inc. Dopant precursors for mono-layer doping
US10699944B2 (en) * 2018-09-28 2020-06-30 Taiwan Semiconductor Manufacturing Company, Ltd. Surface modification layer for conductive feature formation

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Also Published As

Publication number Publication date
WO2006131251A1 (de) 2006-12-14
EP1888822A1 (de) 2008-02-20
US20080314288A1 (en) 2008-12-25
AU2006257042A1 (en) 2006-12-14
JP2008543097A (ja) 2008-11-27
US8043946B2 (en) 2011-10-25
TW200703473A (en) 2007-01-16
DE102005025933B3 (de) 2006-07-13
KR20080033934A (ko) 2008-04-17
AU2006257042B2 (en) 2011-07-14

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