NO20033547L - Ildfaste metallplater med uniform tekstur og fremgangsmåter for fremstilling av disse - Google Patents

Ildfaste metallplater med uniform tekstur og fremgangsmåter for fremstilling av disse

Info

Publication number
NO20033547L
NO20033547L NO20033547A NO20033547A NO20033547L NO 20033547 L NO20033547 L NO 20033547L NO 20033547 A NO20033547 A NO 20033547A NO 20033547 A NO20033547 A NO 20033547A NO 20033547 L NO20033547 L NO 20033547L
Authority
NO
Norway
Prior art keywords
uniform texture
processes
making
refractory metal
metal sheets
Prior art date
Application number
NO20033547A
Other languages
English (en)
Norwegian (no)
Other versions
NO20033547D0 (no
Inventor
Peter R Jepson
Henning Uhlenhut
Prabhat Kumar
Original Assignee
Starck H C Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=23029400&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=NO20033547(L) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Starck H C Inc filed Critical Starck H C Inc
Publication of NO20033547D0 publication Critical patent/NO20033547D0/no
Publication of NO20033547L publication Critical patent/NO20033547L/no

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
    • C22C27/02—Alloys based on vanadium, niobium, or tantalum
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
    • C22F1/18—High-melting or refractory metals or alloys based thereon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Forging (AREA)
  • Powder Metallurgy (AREA)
  • Furnace Housings, Linings, Walls, And Ceilings (AREA)
  • Aerials With Secondary Devices (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Manufacture And Refinement Of Metals (AREA)
NO20033547A 2001-02-20 2003-08-11 Ildfaste metallplater med uniform tekstur og fremgangsmåter for fremstilling av disse NO20033547L (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US26998301P 2001-02-20 2001-02-20
PCT/US2002/005033 WO2002070765A1 (fr) 2001-02-20 2002-02-20 Plaques metalliques refractaires a texture uniforme et leurs procedes de fabrication

Publications (2)

Publication Number Publication Date
NO20033547D0 NO20033547D0 (no) 2003-08-11
NO20033547L true NO20033547L (no) 2003-09-26

Family

ID=23029400

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20033547A NO20033547L (no) 2001-02-20 2003-08-11 Ildfaste metallplater med uniform tekstur og fremgangsmåter for fremstilling av disse

Country Status (21)

Country Link
US (1) US20020112789A1 (fr)
EP (1) EP1366203B1 (fr)
JP (1) JP4327460B2 (fr)
KR (1) KR100966682B1 (fr)
CN (2) CN1789476A (fr)
AT (1) ATE339532T1 (fr)
AU (1) AU2002257005B2 (fr)
BR (1) BR0207384A (fr)
CA (1) CA2438819A1 (fr)
CZ (1) CZ20032246A3 (fr)
DE (1) DE60214683T2 (fr)
ES (1) ES2272707T3 (fr)
HK (1) HK1066833A1 (fr)
HU (1) HUP0303269A3 (fr)
IL (1) IL157279A0 (fr)
MX (1) MXPA03007490A (fr)
NO (1) NO20033547L (fr)
NZ (1) NZ527628A (fr)
PT (1) PT1366203E (fr)
WO (1) WO2002070765A1 (fr)
ZA (1) ZA200306399B (fr)

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US20040016635A1 (en) * 2002-07-19 2004-01-29 Ford Robert B. Monolithic sputtering target assembly
JP4263900B2 (ja) * 2002-11-13 2009-05-13 日鉱金属株式会社 Ｔａスパッタリングターゲット及びその製造方法
JP4728225B2 (ja) * 2003-04-23 2011-07-20 ハー ツェー シュタルク インコーポレイテッド 均一な粒子構造を有するモリブデン合金ｘ線ターゲット
US7228722B2 (en) * 2003-06-09 2007-06-12 Cabot Corporation Method of forming sputtering articles by multidirectional deformation
JP2007523993A (ja) * 2003-06-20 2007-08-23 キャボット　コーポレイション スパッタターゲットをバッキングプレートに結合させるための方法及び設計
US7892367B2 (en) * 2003-11-06 2011-02-22 Jx Nippon Mining & Metals Corporation Tantalum sputtering target
WO2005080961A2 (fr) * 2004-02-18 2005-09-01 Cabot Corporation Procede ultrasonore permettant la detection de lignage des metaux
CA2560951A1 (fr) * 2004-03-26 2005-10-20 H.C. Starck Inc. Creusets metalliques refractaires
US7666243B2 (en) 2004-10-27 2010-02-23 H.C. Starck Inc. Fine grain niobium sheet via ingot metallurgy
US7998287B2 (en) 2005-02-10 2011-08-16 Cabot Corporation Tantalum sputtering target and method of fabrication
BRPI0611539B1 (pt) 2005-05-05 2017-04-04 Starck H C Gmbh método de aplicar um revestimento a uma superfície, camada de aspersão a frio e objeto revestido
EP1880036A2 (fr) * 2005-05-05 2008-01-23 H.C. Starck GmbH Procede de revetement utilise dans la fabrication ou le retraitement de cibles de pulverisation et d'anodes a rayons x
US20070044873A1 (en) * 2005-08-31 2007-03-01 H. C. Starck Inc. Fine grain niobium sheet via ingot metallurgy
CN101374611B (zh) 2006-03-07 2015-04-08 卡伯特公司 制备变形金属制品的方法
JP4974362B2 (ja) 2006-04-13 2012-07-11 株式会社アルバック Ｔａスパッタリングターゲットおよびその製造方法
US20080078268A1 (en) 2006-10-03 2008-04-03 H.C. Starck Inc. Process for preparing metal powders having low oxygen content, powders so-produced and uses thereof
US7776166B2 (en) * 2006-12-05 2010-08-17 Praxair Technology, Inc. Texture and grain size controlled hollow cathode magnetron targets and method of manufacture
US20080145688A1 (en) 2006-12-13 2008-06-19 H.C. Starck Inc. Method of joining tantalum clade steel structures
US8197894B2 (en) 2007-05-04 2012-06-12 H.C. Starck Gmbh Methods of forming sputtering targets
US8250895B2 (en) * 2007-08-06 2012-08-28 H.C. Starck Inc. Methods and apparatus for controlling texture of plates and sheets by tilt rolling
KR101201577B1 (ko) * 2007-08-06 2012-11-14 에이치. 씨. 스타아크 아이앤씨 향상된 조직 균일성을 가진 내화 금속판
US8246903B2 (en) 2008-09-09 2012-08-21 H.C. Starck Inc. Dynamic dehydriding of refractory metal powders
US8043655B2 (en) * 2008-10-06 2011-10-25 H.C. Starck, Inc. Low-energy method of manufacturing bulk metallic structures with submicron grain sizes
CN101920436B (zh) * 2010-08-20 2011-10-26 宁夏东方钽业股份有限公司 溅射钽环件用钽条的制备工艺
CN102021523A (zh) * 2010-09-29 2011-04-20 吴江南玻华东工程玻璃有限公司 一种解决镀膜玻璃边缘效应的方法
US9108273B2 (en) 2011-09-29 2015-08-18 H.C. Starck Inc. Methods of manufacturing large-area sputtering targets using interlocking joints
CN102658346A (zh) * 2012-04-06 2012-09-12 宁夏东方钽业股份有限公司 一种大规格钽靶材的锻造方法
CN102699247B (zh) * 2012-05-18 2014-06-18 宁夏东方钽业股份有限公司 一种超导钽棒的锻造方法
CN103861982B (zh) * 2012-12-18 2016-06-15 宁夏东方钽业股份有限公司 一种铌旋转靶材铸锭的锻造方法
CN104419901B (zh) * 2013-08-27 2017-06-30 宁波江丰电子材料股份有限公司 一种钽靶材的制造方法
KR20160027122A (ko) * 2014-03-27 2016-03-09 제이엑스 킨조쿠 가부시키가이샤 탄탈 스퍼터링 타깃 및 그 제조 방법
US10023953B2 (en) 2014-04-11 2018-07-17 H.C. Starck Inc. High purity refractory metal powders and their use in sputtering targets which may have random texture
WO2016104878A1 (fr) * 2014-12-22 2016-06-30 국방과학연구소 Procédé permettant de vérifier la microstructure et la texture du tantale
US10658163B2 (en) * 2015-05-22 2020-05-19 Jx Nippon Mining & Metals Corporation Tantalum sputtering target, and production method therefor
EP3260572A4 (fr) 2015-05-22 2018-08-01 JX Nippon Mining & Metals Corporation Cible de pulvérisation à base de tantale et son procédé de production
JP6553813B2 (ja) * 2017-03-30 2019-07-31 Ｊｘ金属株式会社 タンタルスパッタリングターゲット
US11062889B2 (en) 2017-06-26 2021-07-13 Tosoh Smd, Inc. Method of production of uniform metal plates and sputtering targets made thereby
US20190161850A1 (en) * 2017-11-30 2019-05-30 Tosoh Smd, Inc. Ultra-fine grain size tantalum sputtering targets with improved voltage performance and methods thereby
KR20210134759A (ko) 2019-03-26 2021-11-10 제이엑스금속주식회사 니오븀 스퍼터링 타깃
CN110983218B (zh) * 2019-12-25 2021-09-03 西部超导材料科技股份有限公司 一种组织均匀的小规格纯铌棒材的制备方法
CN112143990B (zh) * 2020-09-04 2022-01-07 中国航发北京航空材料研究院 一种钛合金β相大尺寸单晶的制备方法
CN116288091A (zh) * 2023-03-28 2023-06-23 南昌大学 一种低温制备超细晶粒钽片的退火工艺

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JP2796752B2 (ja) * 1990-04-27 1998-09-10 日本軽金属株式会社 耐食皮膜用Ａｌ―Ｎｉ―Ｓｉ合金製スパッタリングターゲット
JPH06264233A (ja) * 1993-03-12 1994-09-20 Nikko Kinzoku Kk Ｔｆｔ製造用スパッタリングタ−ゲット
JP2857015B2 (ja) * 1993-04-08 1999-02-10 株式会社ジャパンエナジー 高純度アルミニウムまたはその合金からなるスパッタリングターゲット
US5590389A (en) * 1994-12-23 1996-12-31 Johnson Matthey Electronics, Inc. Sputtering target with ultra-fine, oriented grains and method of making same
US5850755A (en) * 1995-02-08 1998-12-22 Segal; Vladimir M. Method and apparatus for intensive plastic deformation of flat billets
JPH10235670A (ja) * 1997-02-26 1998-09-08 Tosoh Corp ポリオレフィン樹脂連続気泡発泡体の製造方法
US6569270B2 (en) * 1997-07-11 2003-05-27 Honeywell International Inc. Process for producing a metal article
US6348139B1 (en) * 1998-06-17 2002-02-19 Honeywell International Inc. Tantalum-comprising articles
US6348113B1 (en) * 1998-11-25 2002-02-19 Cabot Corporation High purity tantalum, products containing the same, and methods of making the same
US6464809B2 (en) * 1998-11-30 2002-10-15 Outokumpu Oyj Processes for producing articles with stress-free slit edges
JP3079378B1 (ja) * 1999-02-10 2000-08-21 東京タングステン株式会社 Ｍｏスパッターリングターゲット材及びその製造方法
JP2001020065A (ja) * 1999-07-07 2001-01-23 Hitachi Metals Ltd スパッタリング用ターゲット及びその製造方法ならびに高融点金属粉末材料
US6878250B1 (en) * 1999-12-16 2005-04-12 Honeywell International Inc. Sputtering targets formed from cast materials
US6331233B1 (en) * 2000-02-02 2001-12-18 Honeywell International Inc. Tantalum sputtering target with fine grains and uniform texture and method of manufacture
EP1287172B1 (fr) * 2000-05-22 2008-10-29 Cabot Corporation Niobium extremement pur, produits le contenant et ses procedes de preparation

Also Published As

Publication number Publication date
DE60214683T2 (de) 2007-09-13
PT1366203E (pt) 2006-12-29
KR20030090645A (ko) 2003-11-28
KR100966682B1 (ko) 2010-06-29
EP1366203A4 (fr) 2004-07-28
JP4327460B2 (ja) 2009-09-09
NO20033547D0 (no) 2003-08-11
CN1535322A (zh) 2004-10-06
CN1238547C (zh) 2006-01-25
HUP0303269A3 (en) 2004-05-28
BR0207384A (pt) 2004-02-10
HUP0303269A2 (hu) 2004-01-28
EP1366203B1 (fr) 2006-09-13
IL157279A0 (en) 2004-02-19
MXPA03007490A (es) 2004-09-06
DE60214683D1 (de) 2006-10-26
ES2272707T3 (es) 2007-05-01
CA2438819A1 (fr) 2002-09-12
ZA200306399B (en) 2004-08-18
NZ527628A (en) 2004-07-30
ATE339532T1 (de) 2006-10-15
EP1366203A1 (fr) 2003-12-03
HK1066833A1 (en) 2005-04-01
US20020112789A1 (en) 2002-08-22
CZ20032246A3 (cs) 2004-03-17
JP2004526863A (ja) 2004-09-02
AU2002257005B2 (en) 2007-05-31
WO2002070765A1 (fr) 2002-09-12
CN1789476A (zh) 2006-06-21

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