NO153603B - Hoeytemperatur- og hoeytrykksprosess for fremstilling av en sintret, presset gjenstand av polykrystallinsk kubisk bornitrid. - Google Patents
Hoeytemperatur- og hoeytrykksprosess for fremstilling av en sintret, presset gjenstand av polykrystallinsk kubisk bornitrid. Download PDFInfo
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- NO153603B NO153603B NO782272A NO782272A NO153603B NO 153603 B NO153603 B NO 153603B NO 782272 A NO782272 A NO 782272A NO 782272 A NO782272 A NO 782272A NO 153603 B NO153603 B NO 153603B
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- Prior art keywords
- hydrogen
- temperature
- halogen
- bornitrid
- sintered
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- 238000004519 manufacturing process Methods 0.000 title claims description 8
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 title 1
- 229910052739 hydrogen Inorganic materials 0.000 claims description 14
- 239000001257 hydrogen Substances 0.000 claims description 14
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims description 12
- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 11
- 238000006243 chemical reaction Methods 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 10
- 150000001336 alkenes Chemical class 0.000 claims description 6
- 229910017052 cobalt Inorganic materials 0.000 claims description 5
- 239000010941 cobalt Substances 0.000 claims description 5
- 239000002904 solvent Substances 0.000 claims description 5
- 239000003054 catalyst Substances 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 claims description 4
- MQIKJSYMMJWAMP-UHFFFAOYSA-N dicobalt octacarbonyl Chemical group [Co+2].[Co+2].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-] MQIKJSYMMJWAMP-UHFFFAOYSA-N 0.000 claims description 2
- 125000005843 halogen group Chemical group 0.000 claims description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 2
- 229930195734 saturated hydrocarbon Natural products 0.000 claims description 2
- 125000000217 alkyl group Chemical group 0.000 claims 1
- 125000003118 aryl group Chemical group 0.000 claims 1
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 9
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 6
- UAARVZGODBESIF-UHFFFAOYSA-N 2-chloropropanal Chemical compound CC(Cl)C=O UAARVZGODBESIF-UHFFFAOYSA-N 0.000 description 5
- 150000001299 aldehydes Chemical class 0.000 description 5
- NHTMVDHEPJAVLT-UHFFFAOYSA-N Isooctane Chemical compound CC(C)CC(C)(C)C NHTMVDHEPJAVLT-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- JVSWJIKNEAIKJW-UHFFFAOYSA-N dimethyl-hexane Natural products CCCCCC(C)C JVSWJIKNEAIKJW-UHFFFAOYSA-N 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- HAIGSNHRJAADFJ-UHFFFAOYSA-N 2-bromobutanal Chemical compound CCC(Br)C=O HAIGSNHRJAADFJ-UHFFFAOYSA-N 0.000 description 2
- DDZWOTNZLQMMLD-UHFFFAOYSA-N 2-chloro-3-phenylpropanal Chemical compound O=CC(Cl)CC1=CC=CC=C1 DDZWOTNZLQMMLD-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 2
- UAEPNZWRGJTJPN-UHFFFAOYSA-N methylcyclohexane Chemical compound CC1CCCCC1 UAEPNZWRGJTJPN-UHFFFAOYSA-N 0.000 description 2
- BOVQCIDBZXNFEJ-UHFFFAOYSA-N 1-chloro-3-ethenylbenzene Chemical compound ClC1=CC=CC(C=C)=C1 BOVQCIDBZXNFEJ-UHFFFAOYSA-N 0.000 description 1
- SCHRUBOQSCAFFP-UHFFFAOYSA-N 2-chloro-3-methylbutanal Chemical compound CC(C)C(Cl)C=O SCHRUBOQSCAFFP-UHFFFAOYSA-N 0.000 description 1
- PZGXJYSPQYRCBB-UHFFFAOYSA-N 2-chlorobutanal Chemical compound CCC(Cl)C=O PZGXJYSPQYRCBB-UHFFFAOYSA-N 0.000 description 1
- BMKFFLPVJHCPDD-UHFFFAOYSA-N 5-chloro-5-ethenylcyclohexa-1,3-diene Chemical compound C=CC1(Cl)CC=CC=C1 BMKFFLPVJHCPDD-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- -1 alkyl radical Chemical class 0.000 description 1
- 150000005840 aryl radicals Chemical class 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- GYNNXHKOJHMOHS-UHFFFAOYSA-N methyl-cycloheptane Natural products CC1CCCCCC1 GYNNXHKOJHMOHS-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229930195735 unsaturated hydrocarbon Natural products 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
- B01J3/062—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies characterised by the composition of the materials to be processed
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/583—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on boron nitride
- C04B35/5831—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on boron nitride based on cubic boron nitrides or Wurtzitic boron nitrides, including crystal structure transformation of powder
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/0605—Composition of the material to be processed
- B01J2203/0645—Boronitrides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/065—Composition of the material produced
- B01J2203/066—Boronitrides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/0675—Structural or physico-chemical features of the materials processed
- B01J2203/068—Crystal growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
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- Ceramic Engineering (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Products (AREA)
- Compositions Of Oxide Ceramics (AREA)
Description
Fremgangsmåte for fremstilling av 2-monohalogenerte aldehyder.
Denne oppfinnelse angår en fremgangsmåte for fremstilling av 2-monohalogenerte aldehyder.
Fra norsk patent nr. 64 344 er det kjent
en fremgangsmåte ved hvilken vanngass
eller andre karbonmonoksyd- og hydrogen-holdige gassblandinger kan adderes til
umettede hydrocarboner i nærvær av me-taller i det periodiske systems 8. gruppe og
deres forbindelser og blandinger av disse.
For fremstilling av halogenerte aldehyder har man hittil bare anvendt meget
omstendelige, lite selektive metoder, som
stort sett har gått ut fra den tilsvarende
alkohol. Det er således kjent å overføre
propanol til a-klorpropionaldehyd ved
hjelp av klor i sollys, hvorved imidlertid
utbyttene er meget dårlige.
Videre var fagfolk av den mening at
fremstillingen av halogenerte aldehyder
ved addisjon av karbonoksyd og hydrogen til halogenolefiner ikke var mulig.
Det er nu overraskende funnet at karbonmonoksyd og hydrogen ved passende
reaksjonsbetingelser kan adderes til halogenolefiner med godt utbytte under over-veiende dannelse av a-halogenerte aldehyder.
Foreliggende oppfinnelse går ut på en
fremgangsmåte for fremstilling av 2-halogenaldehyder av typen
R'R"CH - CHX - CHO
av halogensubstituerte olefiner med for-melen:
i hvilken R' og R" betyr et hydrogenatom, en arylrest eller en alkylrest med fortrinnsvis 1—6 C-atomer, og X betyr et halogen-atom, f. eks. klor, fluor eller brom, i nærvær av en katalysator. Fremgangsmåten er i det vesentligste karakterisert ved at det halogensubstituerte olefin under forhøyet trykk og forhøyet temperatur omsettes med hydrogen og karbonmonoksyd i nærvær av koboltkarbonyl-katalysatorer, som f. eks. dikoboltoktakarbonyl eller kobolthydrogen-karbonyl, og i mengder på minst 1 molprosent, fortrinnsvis 5—10 molprosent, basert på det halogenerte olefin.
Ved hjelp av fremgangsmåten ifølge oppfinnelsen kan særlig 2-klorpropionaldehyd fremstilles av vinylklorid. Videre kan f. eks. dannes 2-klorbutyraldehyd av 1-klorpropylen-1,2, 2-brombutyraldehyd av 1-br ompropy len-1,2, 2 - klor- 3 - f enylpropional-dehyd (2-klor-3-hydrokanelaldehyd) av 1-klorstyren, 2-klor-3-metyl-butyraldehyd av l-klor-2-metylpropylen-l,2.
Da koboltkarbonyl er oppløselig så vel i utgangsstoffet som i sluttproduktet, er til-stedeværelsen av et oppløsningsmiddel ikke absolutt nødvendig, men det er imidlertid fordelaktig å gjennomføre omsetningen i 10—20 pst. oppløsning for å oppnå et re-aksjonsprodukt som begunstiger a-halogen-aldehyd-dannelsen. Egnede oppløsnings-midler er f. eks. mettede hydrokarboner, og med fordel slike som har et høyere kokepunkt enn det dannede a-kloraldehyd, slik at det sistnevnte ved destillasjon i for-løp kan adskilles fra oppløsningsmidlet. For fremstillingen av 2-klorpropionaldehyd er i denne forbindelse n-heptan og isooktan særlig egnet. Man kan imidlertid også anvende andre hydrokarboner, som me-thylcykloheksan, dekan osv.
Hydrogenet og karbonmonoksydet kan tilføres til reaksjonen enkeltvis eller blan-det. Hensiktsmessig velges volumforholdet mellom hydrogen og karbonmonoksydet over 0,4, fortrinnsvis mellom 1 og 4 og hensiktsmessig ikke over 7, hvorved det min-ste partialtrykk av hydrogen og karbonmonoksyd blir henholdsvis 25 og 40 atmosfærer. Fortrinnsvis arbeides ved et total-trykk på 150 til 400 atmosfærer. Trykk over 500 atmosfærer behøver ikke gi noen merk-bar fordel.
Reaksjonstemperaturen holdes hensiktsmessig mellom 75 og 140°C, fortrinnsvis mellom 95 og 115°C. Ved høyere tempe-raturer oppstår høy-molekylære, harpiks-aktige reaksjonsprodukter.
Som reaksjonskar tjener hensiktsmessig en røre- eller rysteautoklav. Ved over-holdelse av de forholdsvis lange reaksjons-tider er det selvsagt også mulig å anvende en kontinuerlig gjennomføring av frem-gangmsåten, f. eks. i et rør eller særlig i en rørekarkaskade.
I det følgende skal den foreliggende oppfinnelse illustreres kort ved hjelp av eksempler.
Eksempel 1.
Reaksjonsapparaturen (en rysteautoklav) ble tilsatt n-heptan som inneholdt 80 mmol vinylklorid og 4,4 mmol dikoboltoktakarbonyl. Det ble nå innført syntese-gass som pr. 1 volumdel karbonmonoksyd inneholdt 2,33 volumdeler hydrogen, inntil trykket var 200 atmosfærer. Etter opp-varmning til 110°C ble denne temperatur holdt konstant i 90 minutter. Produktet som ble tatt ut av reaktoren etter avkjøling, viste at av de 57,4 pst. vinylklorid som var omsatt under disse betingelser, var 86,2 pst. overført til 2-klorpropionaldehyd.
Eksempel 2.
Reaksjonstemperaturen ble fylt som i eksempel 1. Forholdet hydrogen til karbonmonoksyd var 1,35:1. Reaksjonstemperaturen ble holdt på 95°C i 120 minutter. 2-klorpropionaldehyd med 83,6 pst. utbytte, basert på 44,3 pst. omsetning av vinylkloridet, ble utvunnet.
Eksempel 3.
I en 2-liters autoklav ble under ute-lukkelse av luft og fuktighet innført 100 g vinylklorid og 500 ml isooktan som inneholdt 25 g dikoboltoktakarbonyl. Deretter ble 80 atmosfærer karbonmonoksyd og 160 atmosfærer hydrogen presset inn, og inn-holdet ble oppvarmet til 115°C. Over 75°C startet reaksjonen. 90 minutter etter at den ønskede temperatur var nådd, var 52 pst. av vinylkloridet omsatt med 83 pst. utbytte til 2-klorpropionaldehyd.
Eksempel 4.
I en 100 cm3 autoklav ble 12,1 g 1-brompropylen-1,2, oppløst i 60 ml isooktan, i nærvær av 3 g dikoboltoktakarbonyl omsatt med en blanding av hydrogen/karbonmonoksyd i forhold på ca. 3:1 ved et to-taltrykk på 300 atmosfærer. Etter to timer kunne 2-brombutyraldehyd isoleres med godt utbytte.
Eksempel 5.
På samme måte fikk man av 0,2 mol M-klorstyren og n-heptan som oppløsnings-middel 0,06 mol-a-klorhydrokanelaldehyd.
Claims (2)
1. Fremgangsmåte for fremstilling av 2:-halogenaldehyder av typen R'R"CH - CHX - CHO fra halogensubstituerte olefiner med den generelle formel R'R"C = CHX, i hvilken R' og R" betyr et hydrogenatom, en alkylrest eller en arylrest, og X betyr et halo-genatom, i nærvær av en katalysator, karakterisert ved at det halogensubstituerte olefin under forhøyet trykk og temperatur omsettes med en blanding av hydrogen og karbonmonoksyd i nærvær av en koboltkarbonyl-katalysator som f. eks. dikoboltoktakarbonyl eller kobolthydrogen-karbonyl i mengder på minst 1 molprosent, fortrinnsvis 5—10 molprosent, basert på det halogenerte olefin.
2. Fremgangsmåte ifølge påstand 1, karakterisert ved at reaksjonen ut-føres i nærvær av et mettet hydrokarbon som oppløsningsmiddel.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/812,283 US4188194A (en) | 1976-10-29 | 1977-07-01 | Direct conversion process for making cubic boron nitride from pyrolytic boron nitride |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| NO782272L NO782272L (no) | 1979-01-03 |
| NO153603B true NO153603B (no) | 1986-01-13 |
| NO153603C NO153603C (no) | 1986-04-23 |
Family
ID=25209106
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO782272A NO153603C (no) | 1977-07-01 | 1978-06-30 | H¯ytemperatur- og h¯ytrykksprosess for fremstilling av en sintret, presset gjenstand av polykrystallinsk kubisk born itrid. |
Country Status (20)
| Country | Link |
|---|---|
| JP (1) | JPS5433510A (no) |
| AT (1) | AT395144B (no) |
| AU (1) | AU524584B2 (no) |
| BE (1) | BE868653A (no) |
| BR (1) | BR7804310A (no) |
| CH (1) | CH644091A5 (no) |
| DE (1) | DE2828742A1 (no) |
| DK (1) | DK298578A (no) |
| ES (1) | ES471333A1 (no) |
| FR (1) | FR2395948A1 (no) |
| GB (1) | GB2002333B (no) |
| IE (1) | IE47548B1 (no) |
| IL (1) | IL54939A0 (no) |
| IN (1) | IN150013B (no) |
| IT (1) | IT1096850B (no) |
| MX (1) | MX149093A (no) |
| NL (1) | NL186506C (no) |
| NO (1) | NO153603C (no) |
| SE (1) | SE447241B (no) |
| ZA (1) | ZA783449B (no) |
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4289503A (en) * | 1979-06-11 | 1981-09-15 | General Electric Company | Polycrystalline cubic boron nitride abrasive and process for preparing same in the absence of catalyst |
| DE3125484A1 (de) * | 1981-06-29 | 1983-03-17 | Belorusskij politechničeskij institut, Minsk | Verfahren zur herstellung von polykristallen eines aus dichten modifikationen bestehenden bornitrides |
| DE3229846C2 (de) * | 1982-08-11 | 1984-05-24 | Dr. Johannes Heidenhain Gmbh, 8225 Traunreut | Längen- oder Winkelmeßeinrichtung |
| EP0194358B1 (en) * | 1985-01-11 | 1991-10-23 | Sumitomo Electric Industries, Ltd. | Heat sink using a sintered body having high heat-conductivity and method of manufacturing thereof |
| EP0221531A3 (en) * | 1985-11-06 | 1992-02-19 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | High heat conductive insulated substrate and method of manufacturing the same |
| JPS62108717A (ja) * | 1985-11-07 | 1987-05-20 | Denki Kagaku Kogyo Kk | 立方晶窒化ほう素の製造方法 |
| JPS62108711A (ja) * | 1985-11-07 | 1987-05-20 | Denki Kagaku Kogyo Kk | 立方晶窒化ほう素の製造方法 |
| JPS62108716A (ja) * | 1985-11-07 | 1987-05-20 | Denki Kagaku Kogyo Kk | 立方晶窒化ほう素の製造方法 |
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| JPS62108715A (ja) * | 1985-11-07 | 1987-05-20 | Denki Kagaku Kogyo Kk | 立方晶窒化ほう素の製造方法 |
| DE3774744D1 (de) * | 1986-04-09 | 1992-01-09 | Sumitomo Electric Industries | Verfahren zur herstellung von kompakten sinterkoerpern aus kubischem bornitrid. |
| JPH0339795U (no) * | 1989-04-19 | 1991-04-17 | ||
| US5015265A (en) * | 1989-06-14 | 1991-05-14 | General Electric Company | Process for making cubic boron nitride from coated hexagonal boron nitride, and abrasive particles and articles made therefrom |
| JPH07104739A (ja) * | 1993-10-01 | 1995-04-21 | Maruyasu Kanagata:Kk | 大正琴 |
| JPH10158065A (ja) * | 1996-11-28 | 1998-06-16 | Sumitomo Electric Ind Ltd | 立方晶窒化ホウ素焼結体およびその製造方法 |
| CN101965643A (zh) * | 2007-12-31 | 2011-02-02 | 拉斐尔·纳坦·克雷曼 | 高效率硅基太阳能电池 |
| US20090169781A1 (en) * | 2007-12-31 | 2009-07-02 | Marc Schaepkens | Low thermal conductivity low density pyrolytic boron nitride material, method of making, and articles made therefrom |
| EP2752398B1 (en) | 2011-08-30 | 2019-02-06 | Sumitomo Electric Industries, Ltd. | Cubic boron nitride complex polycrystalline substance, method for manufacturing same, cutting tool, wire-drawing die, and grinding tool |
| JP6159064B2 (ja) * | 2012-08-08 | 2017-07-05 | 住友電気工業株式会社 | 立方晶窒化ホウ素複合多結晶体及び切削工具、線引きダイス、ならびに研削工具 |
| JP5929655B2 (ja) * | 2012-09-11 | 2016-06-08 | 住友電気工業株式会社 | 立方晶窒化ホウ素複合多結晶体およびその製造方法、切削工具、ならびに耐摩工具 |
| JP6291995B2 (ja) | 2014-04-18 | 2018-03-14 | 住友電気工業株式会社 | 立方晶窒化ホウ素多結晶体、切削工具、耐摩工具、研削工具、および立方晶窒化ホウ素多結晶体の製造方法 |
| JP6447197B2 (ja) | 2015-02-04 | 2019-01-09 | 住友電気工業株式会社 | 立方晶窒化ホウ素多結晶体、切削工具、耐摩工具、研削工具、および立方晶窒化ホウ素多結晶体の製造方法 |
| JP6447205B2 (ja) | 2015-02-09 | 2019-01-09 | 住友電気工業株式会社 | 立方晶窒化ホウ素多結晶体、切削工具、耐摩工具、研削工具、および立方晶窒化ホウ素多結晶体の製造方法 |
| JP6978445B2 (ja) * | 2016-06-29 | 2021-12-08 | スミス インターナショナル インコーポレイテッド | 立方プレスによるバインダーレスｃＢＮ焼結 |
| US11453589B2 (en) | 2016-10-06 | 2022-09-27 | Sumitomo Electric Industries, Ltd. | Method of producing boron nitride polycrystal, boron nitride polycrystal, cutting tool, wear-resisting tool, and grinding tool |
| US11046581B2 (en) | 2018-06-18 | 2021-06-29 | Sumitomo Electric Hardmetal Corp. | Polycrystalline cubic boron nitride and method for manufacturing the same |
| EP3858803A4 (en) * | 2018-09-27 | 2022-05-11 | Sumitomo Electric Hardmetal Corp. | POLYCRYSTALLINE BODY OF CUBIC BORON NITRIDE AND METHOD FOR PRODUCTION |
| WO2020174923A1 (ja) * | 2019-02-28 | 2020-09-03 | 住友電工ハードメタル株式会社 | 立方晶窒化硼素多結晶体及びその製造方法 |
| WO2020174922A1 (ja) * | 2019-02-28 | 2020-09-03 | 住友電工ハードメタル株式会社 | 立方晶窒化硼素多結晶体及びその製造方法 |
| WO2020175647A1 (ja) * | 2019-02-28 | 2020-09-03 | 住友電工ハードメタル株式会社 | 立方晶窒化硼素多結晶体及びその製造方法 |
| WO2023027122A1 (ja) * | 2021-08-26 | 2023-03-02 | デンカ株式会社 | セラミックス板の製造方法、セラミックス板、複合シート、及び積層基板 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3578403A (en) * | 1968-07-05 | 1971-05-11 | Union Carbide Corp | Recrystallization of pyrolytic boron nitride |
| DE2111180C3 (de) * | 1971-03-09 | 1973-10-11 | Institut Fisiki Twojordowo Tela I Poluprowodnikow Akademii Nauk Belorusskoj Ssr, Minsk (Sowjetunion) | Verfahren zur Herstellung von kubi schem Bornitrid |
| ZA724056B (en) * | 1971-07-01 | 1973-03-28 | Gen Electric | Catalyst systems for synthesis of cubic boron nitride |
| JPS5238049B2 (no) * | 1972-02-04 | 1977-09-27 | ||
| JPS5647124B2 (no) * | 1973-06-26 | 1981-11-07 | ||
| IE39632B1 (en) * | 1973-09-06 | 1978-11-22 | Gen Electric | Production of high-density boron nitride |
| JPS5760676B2 (no) * | 1973-09-28 | 1982-12-21 | Tokyo Shibaura Electric Co | |
| JPS5061413A (no) * | 1973-10-01 | 1975-05-27 | ||
| JPS5750677Y2 (no) * | 1973-12-05 | 1982-11-05 | ||
| JPS5116196A (ja) * | 1974-07-29 | 1976-02-09 | Hitachi Ltd | Kokanyorotsukakuketsusokusochi |
-
1978
- 1978-06-14 IN IN657/CAL/78A patent/IN150013B/en unknown
- 1978-06-15 ZA ZA783449A patent/ZA783449B/xx unknown
- 1978-06-16 IL IL7854939A patent/IL54939A0/xx not_active IP Right Cessation
- 1978-06-29 GB GB7828248A patent/GB2002333B/en not_active Expired
- 1978-06-29 AU AU37619/78A patent/AU524584B2/en not_active Expired
- 1978-06-30 JP JP7877378A patent/JPS5433510A/ja active Granted
- 1978-06-30 DK DK298578A patent/DK298578A/da not_active Application Discontinuation
- 1978-06-30 IT IT25186/78A patent/IT1096850B/it active
- 1978-06-30 BE BE189003A patent/BE868653A/xx not_active IP Right Cessation
- 1978-06-30 ES ES471333A patent/ES471333A1/es not_active Expired
- 1978-06-30 FR FR7819597A patent/FR2395948A1/fr active Granted
- 1978-06-30 DE DE19782828742 patent/DE2828742A1/de active Granted
- 1978-06-30 NO NO782272A patent/NO153603C/no unknown
- 1978-06-30 MX MX174019A patent/MX149093A/es unknown
- 1978-06-30 IE IE1320/78A patent/IE47548B1/en not_active IP Right Cessation
- 1978-06-30 SE SE7807437A patent/SE447241B/sv not_active IP Right Cessation
- 1978-06-30 BR BR7804310A patent/BR7804310A/pt unknown
- 1978-06-30 AT AT0477478A patent/AT395144B/de not_active IP Right Cessation
- 1978-06-30 CH CH719678A patent/CH644091A5/de not_active IP Right Cessation
- 1978-07-03 NL NLAANVRAGE7807196,A patent/NL186506C/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| GB2002333A (en) | 1979-02-21 |
| AU3761978A (en) | 1980-01-03 |
| AU524584B2 (en) | 1982-09-23 |
| NL7807196A (nl) | 1979-01-03 |
| IE781320L (en) | 1979-01-01 |
| DE2828742C2 (no) | 1989-02-02 |
| IT1096850B (it) | 1985-08-26 |
| MX149093A (es) | 1983-08-24 |
| IT7825186A0 (it) | 1978-06-30 |
| IE47548B1 (en) | 1984-04-18 |
| DK298578A (da) | 1979-01-02 |
| CH644091A5 (de) | 1984-07-13 |
| ATA477478A (de) | 1992-02-15 |
| BR7804310A (pt) | 1979-04-17 |
| JPS63394B2 (no) | 1988-01-06 |
| SE447241B (sv) | 1986-11-03 |
| DE2828742A1 (de) | 1979-03-01 |
| BE868653A (fr) | 1978-10-16 |
| ZA783449B (en) | 1980-04-30 |
| IN150013B (no) | 1982-06-26 |
| FR2395948B1 (no) | 1984-03-23 |
| ES471333A1 (es) | 1979-10-01 |
| NL186506B (nl) | 1990-07-16 |
| IL54939A0 (en) | 1978-08-31 |
| NL186506C (nl) | 1990-12-17 |
| AT395144B (de) | 1992-09-25 |
| GB2002333B (en) | 1982-05-26 |
| NO782272L (no) | 1979-01-03 |
| FR2395948A1 (fr) | 1979-01-26 |
| NO153603C (no) | 1986-04-23 |
| JPS5433510A (en) | 1979-03-12 |
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