NL9120003A - Wolfraamdisilicide-cvd. - Google Patents
Wolfraamdisilicide-cvd. Download PDFInfo
- Publication number
- NL9120003A NL9120003A NL9120003A NL9120003A NL9120003A NL 9120003 A NL9120003 A NL 9120003A NL 9120003 A NL9120003 A NL 9120003A NL 9120003 A NL9120003 A NL 9120003A NL 9120003 A NL9120003 A NL 9120003A
- Authority
- NL
- Netherlands
- Prior art keywords
- tungsten
- mtorr
- silane
- disilane
- partial pressure
- Prior art date
Links
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 title description 15
- 229910052721 tungsten Inorganic materials 0.000 title description 15
- 239000010937 tungsten Substances 0.000 title description 15
- 229910021332 silicide Inorganic materials 0.000 title description 8
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 title description 7
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 title description 6
- 229910000077 silane Inorganic materials 0.000 title description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 title 1
- 125000001309 chloro group Chemical group Cl* 0.000 title 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims abstract description 23
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 15
- 239000000203 mixture Substances 0.000 claims description 11
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 claims description 8
- 229910021342 tungsten silicide Inorganic materials 0.000 claims description 8
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims 1
- 229910003818 SiH2Cl2 Inorganic materials 0.000 abstract description 3
- 229910007264 Si2H6 Inorganic materials 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- 230000000694 effects Effects 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 230000003247 decreasing effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000005046 Chlorosilane Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical class Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000000543 intermediate Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000006722 reduction reaction Methods 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XMIJDTGORVPYLW-UHFFFAOYSA-N [SiH2] Chemical compound [SiH2] XMIJDTGORVPYLW-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000004573 interface analysis Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- WNUPENMBHHEARK-UHFFFAOYSA-N silicon tungsten Chemical compound [Si].[W] WNUPENMBHHEARK-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
- H01L21/441—Deposition of conductive or insulating materials for electrodes
- H01L21/443—Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/42—Silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32051—Deposition of metallic or metal-silicide layers
- H01L21/32053—Deposition of metallic or metal-silicide layers of metal-silicide layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/147—Silicides
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/519,538 US4966869A (en) | 1990-05-04 | 1990-05-04 | Tungsten disilicide CVD |
| US51953890 | 1990-05-04 | ||
| PCT/US1991/003049 WO1991017566A1 (en) | 1990-05-04 | 1991-05-03 | Tungsten disilicide cvd |
| US9103049 | 1991-05-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL9120003A true NL9120003A (nl) | 1992-05-06 |
Family
ID=24068739
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL9120003A NL9120003A (nl) | 1990-05-04 | 1991-05-03 | Wolfraamdisilicide-cvd. |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4966869A (ja) |
| JP (1) | JPH05504660A (ja) |
| KR (1) | KR920702794A (ja) |
| DE (1) | DE4190885T (ja) |
| NL (1) | NL9120003A (ja) |
| WO (1) | WO1991017566A1 (ja) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2723396B2 (ja) * | 1991-09-19 | 1998-03-09 | シャープ株式会社 | 不揮発性メモリ装置の製造方法 |
| JP3163687B2 (ja) * | 1991-11-12 | 2001-05-08 | 富士通株式会社 | 化学気相成長装置及び化学気相成長膜形成方法 |
| US5231056A (en) * | 1992-01-15 | 1993-07-27 | Micron Technology, Inc. | Tungsten silicide (WSix) deposition process for semiconductor manufacture |
| JP2599560B2 (ja) * | 1992-09-30 | 1997-04-09 | インターナショナル・ビジネス・マシーンズ・コーポレイション | ケイ化タングステン膜形成方法 |
| US5500249A (en) * | 1992-12-22 | 1996-03-19 | Applied Materials, Inc. | Uniform tungsten silicide films produced by chemical vapor deposition |
| US5558910A (en) * | 1992-12-22 | 1996-09-24 | Applied Materials, Inc. | Uniform tungsten silicide films produced by chemical vapor deposition |
| JPH07176484A (ja) * | 1993-06-28 | 1995-07-14 | Applied Materials Inc | 窒化アルミニューム面を有するサセプタをサセプタの浄化後珪化タングステンで処理することによって半導体ウエハ上に珪化タングステンを一様に堆積する方法 |
| US6090706A (en) * | 1993-06-28 | 2000-07-18 | Applied Materials, Inc. | Preconditioning process for treating deposition chamber prior to deposition of tungsten silicide coating on active substrates therein |
| US5482749A (en) * | 1993-06-28 | 1996-01-09 | Applied Materials, Inc. | Pretreatment process for treating aluminum-bearing surfaces of deposition chamber prior to deposition of tungsten silicide coating on substrate therein |
| USRE39895E1 (en) | 1994-06-13 | 2007-10-23 | Renesas Technology Corp. | Semiconductor integrated circuit arrangement fabrication method |
| DE69518710T2 (de) | 1994-09-27 | 2001-05-23 | Applied Materials Inc | Verfahren zum Behandeln eines Substrats in einer Vakuumbehandlungskammer |
| JPH08153804A (ja) * | 1994-09-28 | 1996-06-11 | Sony Corp | ゲート電極の形成方法 |
| EP0746027A3 (en) * | 1995-05-03 | 1998-04-01 | Applied Materials, Inc. | Polysilicon/tungsten silicide multilayer composite formed on an integrated circuit structure, and improved method of making same |
| KR100341247B1 (ko) * | 1995-12-29 | 2002-11-07 | 주식회사 하이닉스반도체 | 반도체소자의제조방법 |
| EP0785574A3 (en) | 1996-01-16 | 1998-07-29 | Applied Materials, Inc. | Method of forming tungsten-silicide |
| US6335280B1 (en) | 1997-01-13 | 2002-01-01 | Asm America, Inc. | Tungsten silicide deposition process |
| TW396646B (en) | 1997-09-11 | 2000-07-01 | Lg Semicon Co Ltd | Manufacturing method of semiconductor devices |
| KR100425147B1 (ko) * | 1997-09-29 | 2004-05-17 | 주식회사 하이닉스반도체 | 반도체소자의제조방법 |
| DE10134461B4 (de) * | 2001-07-16 | 2006-05-18 | Infineon Technologies Ag | Prozess zur Abscheidung von WSix-Schichten auf hoher Topografie mit definierter Stöchiometrie und dadurch hergestelltes Bauelement |
| US6913670B2 (en) * | 2002-04-08 | 2005-07-05 | Applied Materials, Inc. | Substrate support having barrier capable of detecting fluid leakage |
| US8859417B2 (en) | 2013-01-03 | 2014-10-14 | Globalfoundries Inc. | Gate electrode(s) and contact structure(s), and methods of fabrication thereof |
| JP6503543B2 (ja) * | 2015-05-08 | 2019-04-24 | 国立研究開発法人産業技術総合研究所 | 遷移金属シリサイド膜、その製造方法及び製造装置並びに半導体装置 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3211752C2 (de) * | 1982-03-30 | 1985-09-26 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum selektiven Abscheiden von aus Siliziden hochschmelzender Metalle bestehenden Schichtstrukturen auf im wesentlichen aus Silizium bestehenden Substraten und deren Verwendung |
| JPS621228A (ja) * | 1985-06-26 | 1987-01-07 | Fujitsu Ltd | タングステンシリサイドの選択成長方法 |
| US4692343A (en) * | 1985-08-05 | 1987-09-08 | Spectrum Cvd, Inc. | Plasma enhanced CVD |
| US4737474A (en) * | 1986-11-17 | 1988-04-12 | Spectrum Cvd, Inc. | Silicide to silicon bonding process |
| US4902645A (en) * | 1987-08-24 | 1990-02-20 | Fujitsu Limited | Method of selectively forming a silicon-containing metal layer |
-
1990
- 1990-05-04 US US07/519,538 patent/US4966869A/en not_active Expired - Fee Related
-
1991
- 1991-05-03 NL NL9120003A patent/NL9120003A/nl not_active Application Discontinuation
- 1991-05-03 WO PCT/US1991/003049 patent/WO1991017566A1/en active Application Filing
- 1991-05-03 DE DE19914190885 patent/DE4190885T/de not_active Withdrawn
- 1991-05-03 JP JP3508911A patent/JPH05504660A/ja active Pending
- 1991-05-03 KR KR1019910702017A patent/KR920702794A/ko not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| KR920702794A (ko) | 1992-10-06 |
| WO1991017566A1 (en) | 1991-11-14 |
| DE4190885T (ja) | 1992-12-10 |
| JPH05504660A (ja) | 1993-07-15 |
| US4966869A (en) | 1990-10-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| CNR | Transfer of rights (patent application after its laying open for public inspection) |
Free format text: BALZERS AKTIENGESELLSCHAFT |
|
| BV | The patent application has lapsed |