NL9120003A - Wolfraamdisilicide-cvd. - Google Patents

Wolfraamdisilicide-cvd. Download PDF

Info

Publication number
NL9120003A
NL9120003A NL9120003A NL9120003A NL9120003A NL 9120003 A NL9120003 A NL 9120003A NL 9120003 A NL9120003 A NL 9120003A NL 9120003 A NL9120003 A NL 9120003A NL 9120003 A NL9120003 A NL 9120003A
Authority
NL
Netherlands
Prior art keywords
mtorr
tungsten
disilane
partial pressure
uniformity
Prior art date
Application number
NL9120003A
Other languages
English (en)
Dutch (nl)
Original Assignee
Bct Spectrum Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bct Spectrum Inc filed Critical Bct Spectrum Inc
Publication of NL9120003A publication Critical patent/NL9120003A/nl

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/42—Silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0112—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors using conductive layers comprising silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/412—Deposition of metallic or metal-silicide materials
    • H10P14/414—Deposition of metallic or metal-silicide materials of metal-silicide materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/147—Silicides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
NL9120003A 1990-05-04 1991-05-03 Wolfraamdisilicide-cvd. NL9120003A (nl)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US07/519,538 US4966869A (en) 1990-05-04 1990-05-04 Tungsten disilicide CVD
US51953890 1990-05-04
PCT/US1991/003049 WO1991017566A1 (en) 1990-05-04 1991-05-03 Tungsten disilicide cvd
US9103049 1991-05-03

Publications (1)

Publication Number Publication Date
NL9120003A true NL9120003A (nl) 1992-05-06

Family

ID=24068739

Family Applications (1)

Application Number Title Priority Date Filing Date
NL9120003A NL9120003A (nl) 1990-05-04 1991-05-03 Wolfraamdisilicide-cvd.

Country Status (6)

Country Link
US (1) US4966869A (enExample)
JP (1) JPH05504660A (enExample)
KR (1) KR920702794A (enExample)
DE (1) DE4190885T (enExample)
NL (1) NL9120003A (enExample)
WO (1) WO1991017566A1 (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2723396B2 (ja) * 1991-09-19 1998-03-09 シャープ株式会社 不揮発性メモリ装置の製造方法
JP3163687B2 (ja) * 1991-11-12 2001-05-08 富士通株式会社 化学気相成長装置及び化学気相成長膜形成方法
US5231056A (en) * 1992-01-15 1993-07-27 Micron Technology, Inc. Tungsten silicide (WSix) deposition process for semiconductor manufacture
JP2599560B2 (ja) * 1992-09-30 1997-04-09 インターナショナル・ビジネス・マシーンズ・コーポレイション ケイ化タングステン膜形成方法
US5500249A (en) * 1992-12-22 1996-03-19 Applied Materials, Inc. Uniform tungsten silicide films produced by chemical vapor deposition
US5643633A (en) * 1992-12-22 1997-07-01 Applied Materials, Inc. Uniform tungsten silicide films produced by chemical vapor depostiton
JPH07176484A (ja) * 1993-06-28 1995-07-14 Applied Materials Inc 窒化アルミニューム面を有するサセプタをサセプタの浄化後珪化タングステンで処理することによって半導体ウエハ上に珪化タングステンを一様に堆積する方法
US6090706A (en) * 1993-06-28 2000-07-18 Applied Materials, Inc. Preconditioning process for treating deposition chamber prior to deposition of tungsten silicide coating on active substrates therein
US5482749A (en) * 1993-06-28 1996-01-09 Applied Materials, Inc. Pretreatment process for treating aluminum-bearing surfaces of deposition chamber prior to deposition of tungsten silicide coating on substrate therein
USRE39895E1 (en) 1994-06-13 2007-10-23 Renesas Technology Corp. Semiconductor integrated circuit arrangement fabrication method
DE69518710T2 (de) * 1994-09-27 2001-05-23 Applied Materials Inc Verfahren zum Behandeln eines Substrats in einer Vakuumbehandlungskammer
JPH08153804A (ja) * 1994-09-28 1996-06-11 Sony Corp ゲート電極の形成方法
EP0746027A3 (en) * 1995-05-03 1998-04-01 Applied Materials, Inc. Polysilicon/tungsten silicide multilayer composite formed on an integrated circuit structure, and improved method of making same
KR100341247B1 (ko) * 1995-12-29 2002-11-07 주식회사 하이닉스반도체 반도체소자의제조방법
EP0785574A3 (en) 1996-01-16 1998-07-29 Applied Materials, Inc. Method of forming tungsten-silicide
US6335280B1 (en) 1997-01-13 2002-01-01 Asm America, Inc. Tungsten silicide deposition process
TW396646B (en) 1997-09-11 2000-07-01 Lg Semicon Co Ltd Manufacturing method of semiconductor devices
KR100425147B1 (ko) * 1997-09-29 2004-05-17 주식회사 하이닉스반도체 반도체소자의제조방법
DE10134461B4 (de) * 2001-07-16 2006-05-18 Infineon Technologies Ag Prozess zur Abscheidung von WSix-Schichten auf hoher Topografie mit definierter Stöchiometrie und dadurch hergestelltes Bauelement
US6913670B2 (en) * 2002-04-08 2005-07-05 Applied Materials, Inc. Substrate support having barrier capable of detecting fluid leakage
US8859417B2 (en) 2013-01-03 2014-10-14 Globalfoundries Inc. Gate electrode(s) and contact structure(s), and methods of fabrication thereof
JP6503543B2 (ja) * 2015-05-08 2019-04-24 国立研究開発法人産業技術総合研究所 遷移金属シリサイド膜、その製造方法及び製造装置並びに半導体装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3211752C2 (de) * 1982-03-30 1985-09-26 Siemens AG, 1000 Berlin und 8000 München Verfahren zum selektiven Abscheiden von aus Siliziden hochschmelzender Metalle bestehenden Schichtstrukturen auf im wesentlichen aus Silizium bestehenden Substraten und deren Verwendung
JPS621228A (ja) * 1985-06-26 1987-01-07 Fujitsu Ltd タングステンシリサイドの選択成長方法
US4692343A (en) * 1985-08-05 1987-09-08 Spectrum Cvd, Inc. Plasma enhanced CVD
US4737474A (en) * 1986-11-17 1988-04-12 Spectrum Cvd, Inc. Silicide to silicon bonding process
EP0305143B1 (en) * 1987-08-24 1993-12-08 Fujitsu Limited Method of selectively forming a conductor layer

Also Published As

Publication number Publication date
KR920702794A (ko) 1992-10-06
WO1991017566A1 (en) 1991-11-14
JPH05504660A (ja) 1993-07-15
DE4190885T (enExample) 1992-12-10
US4966869A (en) 1990-10-30

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