NL9000467A - Uitgangsbuffervoorlaadketen voor een dram. - Google Patents
Uitgangsbuffervoorlaadketen voor een dram. Download PDFInfo
- Publication number
- NL9000467A NL9000467A NL9000467A NL9000467A NL9000467A NL 9000467 A NL9000467 A NL 9000467A NL 9000467 A NL9000467 A NL 9000467A NL 9000467 A NL9000467 A NL 9000467A NL 9000467 A NL9000467 A NL 9000467A
- Authority
- NL
- Netherlands
- Prior art keywords
- data
- precharge
- control
- level
- output
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
- G11C7/106—Data output latches
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4093—Input/output [I/O] data interface arrangements, e.g. data buffers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1048—Data bus control circuits, e.g. precharging, presetting, equalising
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019890008263A KR910005602B1 (ko) | 1989-06-15 | 1989-06-15 | 어드레스 변환 검출에 따른 출력버퍼의 프리챠아지 제어방법 |
| KR890008263 | 1989-06-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL9000467A true NL9000467A (nl) | 1991-01-02 |
Family
ID=19287133
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL9000467A NL9000467A (nl) | 1989-06-15 | 1990-02-27 | Uitgangsbuffervoorlaadketen voor een dram. |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US5058066A (fr) |
| JP (1) | JPH0632216B2 (fr) |
| KR (1) | KR910005602B1 (fr) |
| CN (1) | CN1019706B (fr) |
| DE (1) | DE4006703A1 (fr) |
| FR (1) | FR2648610B1 (fr) |
| GB (1) | GB2233131B (fr) |
| IT (1) | IT1248661B (fr) |
| NL (1) | NL9000467A (fr) |
| RU (1) | RU2051429C1 (fr) |
| SE (1) | SE513715C2 (fr) |
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4857768A (en) * | 1988-04-27 | 1989-08-15 | Sun Microsystems, Inc. | Triple rail logic gate |
| KR930003929B1 (ko) * | 1990-08-09 | 1993-05-15 | 삼성전자 주식회사 | 데이타 출력버퍼 |
| KR940005688B1 (ko) * | 1991-09-05 | 1994-06-22 | 삼성전자 주식회사 | 메모리 소자에 있어서 데이터 라인의 프리챠아지 자동 검사 장치 |
| FR2694121B1 (fr) * | 1992-07-24 | 1995-09-22 | Sgs Thomson Microelectronics | Memoire en circuit integre avec prechaarge prealable en sortie. |
| US5469385A (en) * | 1993-05-11 | 1995-11-21 | Texas Instruments Incorporated | Output buffer with boost from voltage supplies |
| US5349566A (en) * | 1993-05-19 | 1994-09-20 | Micron Semiconductor, Inc. | Memory device with pulse circuit for timing data output, and method for outputting data |
| JPH07182864A (ja) * | 1993-12-21 | 1995-07-21 | Mitsubishi Electric Corp | 半導体記憶装置 |
| JP2634141B2 (ja) * | 1994-01-19 | 1997-07-23 | インターナショナル・ビジネス・マシーンズ・コーポレイション | マルチプロセッサ・システム |
| KR960004567B1 (ko) * | 1994-02-04 | 1996-04-09 | 삼성전자주식회사 | 반도체 메모리 장치의 데이타 출력 버퍼 |
| US5652724A (en) * | 1994-12-23 | 1997-07-29 | Micron Technology, Inc. | Burst EDO memory device having pipelined output buffer |
| US5682354A (en) * | 1995-11-06 | 1997-10-28 | Micron Technology, Inc. | CAS recognition in burst extended data out DRAM |
| US5526320A (en) * | 1994-12-23 | 1996-06-11 | Micron Technology Inc. | Burst EDO memory device |
| US6525971B2 (en) | 1995-06-30 | 2003-02-25 | Micron Technology, Inc. | Distributed write data drivers for burst access memories |
| US5610864A (en) * | 1994-12-23 | 1997-03-11 | Micron Technology, Inc. | Burst EDO memory device with maximized write cycle timing |
| US5668773A (en) * | 1994-12-23 | 1997-09-16 | Micron Technology, Inc. | Synchronous burst extended data out DRAM |
| US5640364A (en) * | 1994-12-23 | 1997-06-17 | Micron Technology, Inc. | Self-enabling pulse trapping circuit |
| US5675549A (en) * | 1994-12-23 | 1997-10-07 | Micron Technology, Inc. | Burst EDO memory device address counter |
| US5729503A (en) * | 1994-12-23 | 1998-03-17 | Micron Technology, Inc. | Address transition detection on a synchronous design |
| US5721859A (en) * | 1994-12-23 | 1998-02-24 | Micron Technology, Inc. | Counter control circuit in a burst memory |
| US6804760B2 (en) | 1994-12-23 | 2004-10-12 | Micron Technology, Inc. | Method for determining a type of memory present in a system |
| US5717654A (en) * | 1995-02-10 | 1998-02-10 | Micron Technology, Inc. | Burst EDO memory device with maximized write cycle timing |
| US5850368A (en) * | 1995-06-01 | 1998-12-15 | Micron Technology, Inc. | Burst EDO memory address counter |
| US5729504A (en) * | 1995-12-14 | 1998-03-17 | Micron Technology, Inc. | Continuous burst edo memory device |
| US7681005B1 (en) | 1996-01-11 | 2010-03-16 | Micron Technology, Inc. | Asynchronously-accessible memory device with mode selection circuitry for burst or pipelined operation |
| US5966724A (en) * | 1996-01-11 | 1999-10-12 | Micron Technology, Inc. | Synchronous memory device with dual page and burst mode operations |
| US6401186B1 (en) | 1996-07-03 | 2002-06-04 | Micron Technology, Inc. | Continuous burst memory which anticipates a next requested start address |
| US6981126B1 (en) | 1996-07-03 | 2005-12-27 | Micron Technology, Inc. | Continuous interleave burst access |
| US7103742B1 (en) | 1997-12-03 | 2006-09-05 | Micron Technology, Inc. | Burst/pipelined edo memory device |
| US6281719B1 (en) | 1999-10-29 | 2001-08-28 | Macronix International Co., Ltd. | Output pad precharge circuit for semiconductor devices |
| US6292405B1 (en) * | 2000-08-11 | 2001-09-18 | Stmicroelectronics S.R.L. | Data output buffer with precharge |
| US7927948B2 (en) | 2005-07-20 | 2011-04-19 | Micron Technology, Inc. | Devices with nanocrystals and methods of formation |
| CN111293738A (zh) * | 2018-12-10 | 2020-06-16 | 法雷奥动力总成(上海)有限公司 | 预充电控制电路及预充电控制方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4291393A (en) * | 1980-02-11 | 1981-09-22 | Mostek Corporation | Active refresh circuit for dynamic MOS circuits |
| JPS58108091A (ja) * | 1981-12-21 | 1983-06-28 | Nec Corp | メモリ回路 |
| JPS5942690A (ja) * | 1982-09-03 | 1984-03-09 | Toshiba Corp | 半導体記憶装置 |
| JPS59181829A (ja) * | 1983-03-31 | 1984-10-16 | Toshiba Corp | 半導体素子の出力バツフア回路 |
| JPS6214520A (ja) * | 1985-07-12 | 1987-01-23 | Sony Corp | メモリの出力バツフア回路 |
| US4658381A (en) * | 1985-08-05 | 1987-04-14 | Motorola, Inc. | Bit line precharge on a column address change |
| US4716550A (en) * | 1986-07-07 | 1987-12-29 | Motorola, Inc. | High performance output driver |
| JPS6381551A (ja) * | 1986-09-25 | 1988-04-12 | Sony Corp | メモリ装置 |
| JPH0817037B2 (ja) * | 1987-12-03 | 1996-02-21 | 松下電子工業株式会社 | スタティックｒａｍの出力回路 |
-
1989
- 1989-06-15 KR KR1019890008263A patent/KR910005602B1/ko not_active IP Right Cessation
-
1990
- 1990-02-27 US US07/485,914 patent/US5058066A/en not_active Expired - Lifetime
- 1990-02-27 NL NL9000467A patent/NL9000467A/nl active Search and Examination
- 1990-02-28 FR FR9002523A patent/FR2648610B1/fr not_active Expired - Lifetime
- 1990-02-28 DE DE4006703A patent/DE4006703A1/de not_active Ceased
- 1990-02-28 GB GB9004473A patent/GB2233131B/en not_active Expired - Lifetime
- 1990-02-28 JP JP2048204A patent/JPH0632216B2/ja not_active Expired - Lifetime
- 1990-05-16 SE SE9001770A patent/SE513715C2/sv unknown
- 1990-05-29 IT IT02046090A patent/IT1248661B/it active IP Right Grant
- 1990-05-30 CN CN90103969A patent/CN1019706B/zh not_active Expired
- 1990-06-08 RU SU904830115A patent/RU2051429C1/ru not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| GB2233131A (en) | 1991-01-02 |
| KR910005602B1 (ko) | 1991-07-31 |
| GB9004473D0 (en) | 1990-04-25 |
| US5058066A (en) | 1991-10-15 |
| IT1248661B (it) | 1995-01-26 |
| FR2648610A1 (fr) | 1990-12-21 |
| JPH0632216B2 (ja) | 1994-04-27 |
| GB2233131B (en) | 1994-03-16 |
| DE4006703A1 (de) | 1991-01-03 |
| CN1019706B (zh) | 1992-12-30 |
| FR2648610B1 (fr) | 1993-12-03 |
| JPH0330185A (ja) | 1991-02-08 |
| KR910001747A (ko) | 1991-01-31 |
| CN1048622A (zh) | 1991-01-16 |
| IT9020460A1 (it) | 1991-11-29 |
| RU2051429C1 (ru) | 1995-12-27 |
| SE9001770D0 (sv) | 1990-05-16 |
| SE9001770L (sv) | 1990-12-16 |
| SE513715C2 (sv) | 2000-10-30 |
| IT9020460A0 (it) | 1990-05-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A1A | A request for search or an international-type search has been filed | ||
| BB | A search report has been drawn up | ||
| BC | A request for examination has been filed | ||
| BN | A decision not to publish the application has become irrevocable |