NL8903108A - Werkwijze voor de vervaardiging van een inrichting en maskergroep voor de werkwijze. - Google Patents

Werkwijze voor de vervaardiging van een inrichting en maskergroep voor de werkwijze. Download PDF

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Publication number
NL8903108A
NL8903108A NL8903108A NL8903108A NL8903108A NL 8903108 A NL8903108 A NL 8903108A NL 8903108 A NL8903108 A NL 8903108A NL 8903108 A NL8903108 A NL 8903108A NL 8903108 A NL8903108 A NL 8903108A
Authority
NL
Netherlands
Prior art keywords
partial
mask
regions
partial masks
light
Prior art date
Application number
NL8903108A
Other languages
English (en)
Dutch (nl)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL8903108A priority Critical patent/NL8903108A/nl
Priority to EP90203311A priority patent/EP0434142B1/fr
Priority to DE69020704T priority patent/DE69020704T2/de
Priority to KR1019900020873A priority patent/KR100204194B1/ko
Priority to JP41127890A priority patent/JPH0772791B2/ja
Publication of NL8903108A publication Critical patent/NL8903108A/nl
Priority to US07/966,667 priority patent/US5286584A/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/13625—Patterning using multi-mask exposure

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
NL8903108A 1989-12-20 1989-12-20 Werkwijze voor de vervaardiging van een inrichting en maskergroep voor de werkwijze. NL8903108A (nl)

Priority Applications (6)

Application Number Priority Date Filing Date Title
NL8903108A NL8903108A (nl) 1989-12-20 1989-12-20 Werkwijze voor de vervaardiging van een inrichting en maskergroep voor de werkwijze.
EP90203311A EP0434142B1 (fr) 1989-12-20 1990-12-13 Méthode pour la fabrication d'un dispositif et groupe de masques pour cette méthode
DE69020704T DE69020704T2 (de) 1989-12-20 1990-12-13 Verfahren zur Herstellung einer Anordnung und Maskgruppe dazu.
KR1019900020873A KR100204194B1 (ko) 1989-12-20 1990-12-18 디바이스의 제조방법 및 이것에 사용하는 마스크군
JP41127890A JPH0772791B2 (ja) 1989-12-20 1990-12-18 デバイスの製造方法およびこれに使用するマスク群
US07/966,667 US5286584A (en) 1989-12-20 1992-10-26 Method of manufacturing a device and group of masks for this method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8903108 1989-12-20
NL8903108A NL8903108A (nl) 1989-12-20 1989-12-20 Werkwijze voor de vervaardiging van een inrichting en maskergroep voor de werkwijze.

Publications (1)

Publication Number Publication Date
NL8903108A true NL8903108A (nl) 1991-07-16

Family

ID=19855803

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8903108A NL8903108A (nl) 1989-12-20 1989-12-20 Werkwijze voor de vervaardiging van een inrichting en maskergroep voor de werkwijze.

Country Status (5)

Country Link
EP (1) EP0434142B1 (fr)
JP (1) JPH0772791B2 (fr)
KR (1) KR100204194B1 (fr)
DE (1) DE69020704T2 (fr)
NL (1) NL8903108A (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0683507B1 (fr) * 1993-12-07 2002-05-29 Kabushiki Kaisha Toshiba Fabrication d'un affichage
BE1007860A3 (nl) * 1993-12-08 1995-11-07 Koninkl Philips Electronics Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting, waarbij deelpatronen bevattende fotomaskers op elkaar aansluitend worden geprojecteerd op een laag fotolak.
US5792591A (en) * 1993-12-08 1998-08-11 U.S. Philips Corporation Method of manufacturing a semiconductor device whereby photomasks comprising partial patterns are projected onto a photoresist layer so as to merge into one another
US5523580A (en) * 1993-12-23 1996-06-04 International Business Machines Corporation Reticle having a number of subfields
US5914205A (en) * 1996-12-27 1999-06-22 U.S. Philips Corporation Method of manufacturing a semiconductor device whereby photomasks comprising partial patterns are projected onto a photoresist layer so as to merge into one another
GB2382156A (en) * 2001-11-15 2003-05-21 Marconi Optical Components Ltd Manufacture of optical devices
KR100784665B1 (ko) * 2005-12-22 2007-12-12 두산메카텍 주식회사 기판의 분할증착용 마스크 장치 및 이를 이용한패턴형성방법
JP2011205042A (ja) * 2010-03-26 2011-10-13 Panasonic Electric Works Co Ltd プリント配線板の製造方法
FR2993097B1 (fr) * 2012-07-05 2015-05-22 Commissariat Energie Atomique Dispositif imageur cmos a geometrie optimisee et procede de realisation d'un tel dispositif par photocomposition
JP6745712B2 (ja) * 2016-11-30 2020-08-26 日東電工株式会社 配線回路基板およびその製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4231811A (en) * 1979-09-13 1980-11-04 Intel Corporation Variable thickness self-aligned photoresist process
US4902899A (en) * 1987-06-01 1990-02-20 International Business Machines Corporation Lithographic process having improved image quality
JP2794794B2 (ja) * 1989-06-19 1998-09-10 富士通株式会社 フォトマスク及びその製造方法

Also Published As

Publication number Publication date
KR910013480A (ko) 1991-08-08
KR100204194B1 (ko) 1999-06-15
EP0434142B1 (fr) 1995-07-05
JPH0772791B2 (ja) 1995-08-02
DE69020704D1 (de) 1995-08-10
JPH049846A (ja) 1992-01-14
EP0434142A1 (fr) 1991-06-26
DE69020704T2 (de) 1996-03-07

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