NL8903108A - Werkwijze voor de vervaardiging van een inrichting en maskergroep voor de werkwijze. - Google Patents
Werkwijze voor de vervaardiging van een inrichting en maskergroep voor de werkwijze. Download PDFInfo
- Publication number
- NL8903108A NL8903108A NL8903108A NL8903108A NL8903108A NL 8903108 A NL8903108 A NL 8903108A NL 8903108 A NL8903108 A NL 8903108A NL 8903108 A NL8903108 A NL 8903108A NL 8903108 A NL8903108 A NL 8903108A
- Authority
- NL
- Netherlands
- Prior art keywords
- partial
- mask
- regions
- partial masks
- light
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 19
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 241001270131 Agaricus moelleri Species 0.000 claims description 19
- 229920002120 photoresistant polymer Polymers 0.000 claims description 19
- 238000002834 transmittance Methods 0.000 claims description 14
- 230000000295 complement effect Effects 0.000 claims description 11
- 238000003384 imaging method Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 7
- 230000003247 decreasing effect Effects 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 238000011282 treatment Methods 0.000 claims description 4
- 239000002244 precipitate Substances 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 claims description 2
- 238000005286 illumination Methods 0.000 claims description 2
- 239000004973 liquid crystal related substance Substances 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001393 microlithography Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/13625—Patterning using multi-mask exposure
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL8903108A NL8903108A (nl) | 1989-12-20 | 1989-12-20 | Werkwijze voor de vervaardiging van een inrichting en maskergroep voor de werkwijze. |
EP90203311A EP0434142B1 (de) | 1989-12-20 | 1990-12-13 | Verfahren zur Herstellung einer Anordnung und Maskgruppe dazu |
DE69020704T DE69020704T2 (de) | 1989-12-20 | 1990-12-13 | Verfahren zur Herstellung einer Anordnung und Maskgruppe dazu. |
KR1019900020873A KR100204194B1 (ko) | 1989-12-20 | 1990-12-18 | 디바이스의 제조방법 및 이것에 사용하는 마스크군 |
JP41127890A JPH0772791B2 (ja) | 1989-12-20 | 1990-12-18 | デバイスの製造方法およびこれに使用するマスク群 |
US07/966,667 US5286584A (en) | 1989-12-20 | 1992-10-26 | Method of manufacturing a device and group of masks for this method |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL8903108 | 1989-12-20 | ||
NL8903108A NL8903108A (nl) | 1989-12-20 | 1989-12-20 | Werkwijze voor de vervaardiging van een inrichting en maskergroep voor de werkwijze. |
Publications (1)
Publication Number | Publication Date |
---|---|
NL8903108A true NL8903108A (nl) | 1991-07-16 |
Family
ID=19855803
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL8903108A NL8903108A (nl) | 1989-12-20 | 1989-12-20 | Werkwijze voor de vervaardiging van een inrichting en maskergroep voor de werkwijze. |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP0434142B1 (de) |
JP (1) | JPH0772791B2 (de) |
KR (1) | KR100204194B1 (de) |
DE (1) | DE69020704T2 (de) |
NL (1) | NL8903108A (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0683507B1 (de) * | 1993-12-07 | 2002-05-29 | Kabushiki Kaisha Toshiba | Herstellungsverfahren für eine anzeigeanordnung |
BE1007860A3 (nl) * | 1993-12-08 | 1995-11-07 | Koninkl Philips Electronics Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting, waarbij deelpatronen bevattende fotomaskers op elkaar aansluitend worden geprojecteerd op een laag fotolak. |
US5792591A (en) * | 1993-12-08 | 1998-08-11 | U.S. Philips Corporation | Method of manufacturing a semiconductor device whereby photomasks comprising partial patterns are projected onto a photoresist layer so as to merge into one another |
US5523580A (en) * | 1993-12-23 | 1996-06-04 | International Business Machines Corporation | Reticle having a number of subfields |
US5914205A (en) * | 1996-12-27 | 1999-06-22 | U.S. Philips Corporation | Method of manufacturing a semiconductor device whereby photomasks comprising partial patterns are projected onto a photoresist layer so as to merge into one another |
GB2382156A (en) * | 2001-11-15 | 2003-05-21 | Marconi Optical Components Ltd | Manufacture of optical devices |
KR100784665B1 (ko) * | 2005-12-22 | 2007-12-12 | 두산메카텍 주식회사 | 기판의 분할증착용 마스크 장치 및 이를 이용한패턴형성방법 |
JP2011205042A (ja) * | 2010-03-26 | 2011-10-13 | Panasonic Electric Works Co Ltd | プリント配線板の製造方法 |
FR2993097B1 (fr) * | 2012-07-05 | 2015-05-22 | Commissariat Energie Atomique | Dispositif imageur cmos a geometrie optimisee et procede de realisation d'un tel dispositif par photocomposition |
JP6745712B2 (ja) * | 2016-11-30 | 2020-08-26 | 日東電工株式会社 | 配線回路基板およびその製造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4231811A (en) * | 1979-09-13 | 1980-11-04 | Intel Corporation | Variable thickness self-aligned photoresist process |
US4902899A (en) * | 1987-06-01 | 1990-02-20 | International Business Machines Corporation | Lithographic process having improved image quality |
JP2794794B2 (ja) * | 1989-06-19 | 1998-09-10 | 富士通株式会社 | フォトマスク及びその製造方法 |
-
1989
- 1989-12-20 NL NL8903108A patent/NL8903108A/nl not_active Application Discontinuation
-
1990
- 1990-12-13 EP EP90203311A patent/EP0434142B1/de not_active Expired - Lifetime
- 1990-12-13 DE DE69020704T patent/DE69020704T2/de not_active Expired - Lifetime
- 1990-12-18 JP JP41127890A patent/JPH0772791B2/ja not_active Expired - Lifetime
- 1990-12-18 KR KR1019900020873A patent/KR100204194B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR910013480A (ko) | 1991-08-08 |
KR100204194B1 (ko) | 1999-06-15 |
EP0434142B1 (de) | 1995-07-05 |
JPH0772791B2 (ja) | 1995-08-02 |
DE69020704D1 (de) | 1995-08-10 |
JPH049846A (ja) | 1992-01-14 |
EP0434142A1 (de) | 1991-06-26 |
DE69020704T2 (de) | 1996-03-07 |
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A1B | A search report has been drawn up | ||
BV | The patent application has lapsed |