NL8801890A - Werkwijze voor het vervaardigen van polykristallijn silicium met hoge weerstand. - Google Patents
Werkwijze voor het vervaardigen van polykristallijn silicium met hoge weerstand. Download PDFInfo
- Publication number
- NL8801890A NL8801890A NL8801890A NL8801890A NL8801890A NL 8801890 A NL8801890 A NL 8801890A NL 8801890 A NL8801890 A NL 8801890A NL 8801890 A NL8801890 A NL 8801890A NL 8801890 A NL8801890 A NL 8801890A
- Authority
- NL
- Netherlands
- Prior art keywords
- polycrystalline silicon
- resistance
- layer
- region
- oxide layer
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 15
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 229920001296 polysiloxane Polymers 0.000 title 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 42
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 22
- 229910052757 nitrogen Inorganic materials 0.000 claims description 13
- 150000002500 ions Chemical class 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 5
- -1 nitrogen ions Chemical class 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 238000002513 implantation Methods 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims description 2
- 239000011261 inert gas Substances 0.000 claims 1
- 238000005468 ion implantation Methods 0.000 description 4
- 230000015654 memory Effects 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3215—Doping the layers
- H01L21/32155—Doping polycristalline - or amorphous silicon layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/136—Resistors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/934—Sheet resistance, i.e. dopant parameters
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR870008419 | 1987-07-31 | ||
KR1019870008419A KR900005038B1 (ko) | 1987-07-31 | 1987-07-31 | 고저항 다결정 실리콘의 제조방법 |
Publications (1)
Publication Number | Publication Date |
---|---|
NL8801890A true NL8801890A (nl) | 1989-02-16 |
Family
ID=19263489
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL8801890A NL8801890A (nl) | 1987-07-31 | 1988-07-27 | Werkwijze voor het vervaardigen van polykristallijn silicium met hoge weerstand. |
Country Status (7)
Country | Link |
---|---|
US (1) | US4965214A (fr) |
JP (1) | JPS6445158A (fr) |
KR (1) | KR900005038B1 (fr) |
DE (1) | DE3825734A1 (fr) |
FR (1) | FR2618942B1 (fr) |
GB (1) | GB2207809B (fr) |
NL (1) | NL8801890A (fr) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1991000620A1 (fr) * | 1989-06-30 | 1991-01-10 | Dallas Semiconductor Corporation | Circuit integre avec element de charge a resistivite augmentee |
JP3082923B2 (ja) * | 1989-12-26 | 2000-09-04 | ソニー株式会社 | 半導体装置の製法 |
DE4114162A1 (de) * | 1990-05-02 | 1991-11-07 | Nippon Sheet Glass Co Ltd | Verfahren zur herstellung eines polykristallinen halbleiterfilms |
US5068201A (en) * | 1990-05-31 | 1991-11-26 | Sgs-Thomson Microelectronics, Inc. | Method for forming a high valued resistive load element and low resistance interconnect for integrated circuits |
US5268325A (en) * | 1990-05-31 | 1993-12-07 | Sgs-Thomson Microelectronics, Inc. | Method for fabricating a polycrystalline silicon resistive load element in an integrated circuit |
JPH04329664A (ja) * | 1991-04-30 | 1992-11-18 | Nec Corp | 高抵抗素子を有する半導体装置の製造方法 |
JPH05206050A (ja) * | 1991-07-01 | 1993-08-13 | Sgs Thomson Microelectron Inc | 酸化物スクリーンを使用したボロン注入ポリシリコン抵抗 |
JPH06104384A (ja) * | 1991-07-18 | 1994-04-15 | Sgs Thomson Microelectron Inc | 高値抵抗及びその製造方法 |
US5462894A (en) * | 1991-08-06 | 1995-10-31 | Sgs-Thomson Microelectronics, Inc. | Method for fabricating a polycrystalline silicon resistive load element in an integrated circuit |
US5273924A (en) * | 1991-08-30 | 1993-12-28 | Micron Technology, Inc. | Method for forming an SRAM by minimizing diffusion of conductivity enhancing impurities from one region of a polysilicon layer to another region |
FR2681978B1 (fr) * | 1991-09-26 | 1993-12-24 | Sgs Thomson Microelectronics Sa | Resistance de precision et procede de fabrication. |
US5212108A (en) * | 1991-12-13 | 1993-05-18 | Honeywell Inc. | Fabrication of stabilized polysilicon resistors for SEU control |
JP3214004B2 (ja) * | 1991-12-17 | 2001-10-02 | ソニー株式会社 | 半導体メモリ装置及びその製法 |
US5538915A (en) * | 1992-06-05 | 1996-07-23 | The Regents Of The University Of California | Process for forming synapses in neural networks and resistor therefor |
US5525831A (en) * | 1993-04-05 | 1996-06-11 | Nippondenso Co., Ltd. | Semiconductor device with thin film resistor having reduced film thickness sensitivity during trimming process |
US5470779A (en) * | 1994-07-25 | 1995-11-28 | Taiwan Semiconductor Manufacturing Company Ltd. | Method of manufacture of SRAM with SIPOS resistor |
US5661325A (en) * | 1994-07-29 | 1997-08-26 | Nkk Corporation | SRAM structure |
JP2699891B2 (ja) * | 1994-10-28 | 1998-01-19 | 日本電気株式会社 | 半導体装置の製造方法 |
US5506167A (en) * | 1995-04-13 | 1996-04-09 | United Microelectronics Corp. | Method of making a high resistance drain junction resistor in a SRAM |
TW329563B (en) * | 1996-06-01 | 1998-04-11 | Winbond Electronics Corp | The manufacturing method for load resistors of SRAM |
GB2319532B (en) | 1996-11-22 | 2001-01-31 | Trikon Equip Ltd | Method and apparatus for treating a semiconductor wafer |
GB2319533B (en) | 1996-11-22 | 2001-06-06 | Trikon Equip Ltd | Methods of forming a barrier layer |
US6140198A (en) * | 1998-11-06 | 2000-10-31 | United Microelectronics Corp. | Method of fabricating load resistor |
DE10021095A1 (de) * | 2000-04-20 | 2001-10-31 | Infineon Technologies Ag | Verfahren zum Bilden eines Dielektrikums auf einem Halbleitersubstrat |
JP2006203748A (ja) * | 2005-01-24 | 2006-08-03 | Sanyo Electric Co Ltd | 駆動回路 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS532552B2 (fr) * | 1974-03-30 | 1978-01-28 | ||
JPS5197385A (en) * | 1975-02-21 | 1976-08-26 | Handotaisochino seizohoho | |
JPS6041458B2 (ja) * | 1975-04-21 | 1985-09-17 | ソニー株式会社 | 半導体装置の製造方法 |
JPS5397791A (en) * | 1977-02-07 | 1978-08-26 | Nec Corp | Production of semiconductor integrated circuit device |
JPS5910581B2 (ja) * | 1977-12-01 | 1984-03-09 | 富士通株式会社 | 半導体装置の製造方法 |
US4408385A (en) * | 1978-06-15 | 1983-10-11 | Texas Instruments Incorporated | Semiconductor integrated circuit with implanted resistor element in polycrystalline silicon layer |
JPS5640269A (en) * | 1979-09-11 | 1981-04-16 | Toshiba Corp | Preparation of semiconductor device |
FR2534415A1 (fr) * | 1982-10-07 | 1984-04-13 | Cii Honeywell Bull | Procede de fabrication de resistances electriques dans un materiau semi-conducteur polycristallin et dispositif a circuits integres resultant |
US4658378A (en) * | 1982-12-15 | 1987-04-14 | Inmos Corporation | Polysilicon resistor with low thermal activation energy |
JPS59152657A (ja) * | 1983-02-18 | 1984-08-31 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | 高シ−ト抵抗を有する多結晶シリコン層の形成方法 |
JPS59161857A (ja) * | 1983-03-07 | 1984-09-12 | Hitachi Ltd | 半導体装置用配線および抵抗体 |
US4584026A (en) * | 1984-07-25 | 1986-04-22 | Rca Corporation | Ion-implantation of phosphorus, arsenic or boron by pre-amorphizing with fluorine ions |
JPS61134055A (ja) * | 1984-12-04 | 1986-06-21 | Sony Corp | 半導体装置の製造方法 |
JPS61145868A (ja) * | 1984-12-20 | 1986-07-03 | Toshiba Corp | 半導体装置の製造方法 |
US4602421A (en) * | 1985-04-24 | 1986-07-29 | The United States Of America As Represented By The Secretary Of The Air Force | Low noise polycrystalline semiconductor resistors by hydrogen passivation |
GB2182488A (en) * | 1985-11-02 | 1987-05-13 | Stc Plc | Integrated circuit resistors |
FR2602093B1 (fr) * | 1985-12-27 | 1988-10-14 | Bull Sa | Procede de fabrication d'une resistance electrique par dopage d'un materiau semiconducteur et circuit integre en resultant |
US4740481A (en) * | 1986-01-21 | 1988-04-26 | Motorola Inc. | Method of preventing hillock formation in polysilicon layer by oxygen implanation |
US4755480A (en) * | 1986-02-03 | 1988-07-05 | Intel Corporation | Method of making a silicon nitride resistor using plasma enhanced chemical vapor deposition |
US4707909A (en) * | 1986-08-08 | 1987-11-24 | Siliconix Incorporated | Manufacture of trimmable high value polycrystalline silicon resistors |
US4762801A (en) * | 1987-02-20 | 1988-08-09 | National Semiconductor Corporation | Method of fabricating polycrystalline silicon resistors having desired temperature coefficients |
-
1987
- 1987-07-31 KR KR1019870008419A patent/KR900005038B1/ko not_active IP Right Cessation
-
1988
- 1988-07-26 JP JP63184756A patent/JPS6445158A/ja active Pending
- 1988-07-27 US US07/224,810 patent/US4965214A/en not_active Expired - Lifetime
- 1988-07-27 NL NL8801890A patent/NL8801890A/nl not_active Application Discontinuation
- 1988-07-28 DE DE3825734A patent/DE3825734A1/de active Granted
- 1988-07-28 FR FR888810177A patent/FR2618942B1/fr not_active Expired - Fee Related
- 1988-08-01 GB GB8818292A patent/GB2207809B/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US4965214A (en) | 1990-10-23 |
FR2618942B1 (fr) | 1991-01-25 |
KR900005038B1 (ko) | 1990-07-18 |
JPS6445158A (en) | 1989-02-17 |
KR890003028A (ko) | 1989-04-12 |
DE3825734C2 (fr) | 1991-10-02 |
GB2207809B (en) | 1991-04-03 |
GB2207809A (en) | 1989-02-08 |
GB8818292D0 (en) | 1988-09-07 |
FR2618942A1 (fr) | 1989-02-03 |
DE3825734A1 (de) | 1989-04-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A1A | A request for search or an international-type search has been filed | ||
CNR | Transfer of rights (patent application after its laying open for public inspection) |
Free format text: SAMSUNG ELECTRONICS CO., LTD. |
|
BB | A search report has been drawn up | ||
BC | A request for examination has been filed | ||
BV | The patent application has lapsed |