FR2618942B1 - Procede de fabrication de silicium polycristallin possedant une resistance elevee - Google Patents

Procede de fabrication de silicium polycristallin possedant une resistance elevee

Info

Publication number
FR2618942B1
FR2618942B1 FR888810177A FR8810177A FR2618942B1 FR 2618942 B1 FR2618942 B1 FR 2618942B1 FR 888810177 A FR888810177 A FR 888810177A FR 8810177 A FR8810177 A FR 8810177A FR 2618942 B1 FR2618942 B1 FR 2618942B1
Authority
FR
France
Prior art keywords
polycrystalline silicon
high resistance
producing polycrystalline
producing
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR888810177A
Other languages
English (en)
Other versions
FR2618942A1 (fr
Inventor
Jung-Hwan Lee
Heyung-Sub Lee
Tae-Yoon Yook
Dong-Joo Bae
Kuy-Hyun Choi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Semiconductor and Telecomunications Co Ltd
Original Assignee
Samsung Semiconductor and Telecomunications Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Semiconductor and Telecomunications Co Ltd filed Critical Samsung Semiconductor and Telecomunications Co Ltd
Publication of FR2618942A1 publication Critical patent/FR2618942A1/fr
Application granted granted Critical
Publication of FR2618942B1 publication Critical patent/FR2618942B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/20—Resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/136—Resistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/934—Sheet resistance, i.e. dopant parameters

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
FR888810177A 1987-07-31 1988-07-28 Procede de fabrication de silicium polycristallin possedant une resistance elevee Expired - Fee Related FR2618942B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019870008419A KR900005038B1 (ko) 1987-07-31 1987-07-31 고저항 다결정 실리콘의 제조방법

Publications (2)

Publication Number Publication Date
FR2618942A1 FR2618942A1 (fr) 1989-02-03
FR2618942B1 true FR2618942B1 (fr) 1991-01-25

Family

ID=19263489

Family Applications (1)

Application Number Title Priority Date Filing Date
FR888810177A Expired - Fee Related FR2618942B1 (fr) 1987-07-31 1988-07-28 Procede de fabrication de silicium polycristallin possedant une resistance elevee

Country Status (7)

Country Link
US (1) US4965214A (fr)
JP (1) JPS6445158A (fr)
KR (1) KR900005038B1 (fr)
DE (1) DE3825734A1 (fr)
FR (1) FR2618942B1 (fr)
GB (1) GB2207809B (fr)
NL (1) NL8801890A (fr)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1991000620A1 (fr) * 1989-06-30 1991-01-10 Dallas Semiconductor Corporation Circuit integre avec element de charge a resistivite augmentee
JP3082923B2 (ja) * 1989-12-26 2000-09-04 ソニー株式会社 半導体装置の製法
DE4114162A1 (de) * 1990-05-02 1991-11-07 Nippon Sheet Glass Co Ltd Verfahren zur herstellung eines polykristallinen halbleiterfilms
US5068201A (en) * 1990-05-31 1991-11-26 Sgs-Thomson Microelectronics, Inc. Method for forming a high valued resistive load element and low resistance interconnect for integrated circuits
US5268325A (en) * 1990-05-31 1993-12-07 Sgs-Thomson Microelectronics, Inc. Method for fabricating a polycrystalline silicon resistive load element in an integrated circuit
JPH04329664A (ja) * 1991-04-30 1992-11-18 Nec Corp 高抵抗素子を有する半導体装置の製造方法
JPH05206050A (ja) * 1991-07-01 1993-08-13 Sgs Thomson Microelectron Inc 酸化物スクリーンを使用したボロン注入ポリシリコン抵抗
JPH06104384A (ja) * 1991-07-18 1994-04-15 Sgs Thomson Microelectron Inc 高値抵抗及びその製造方法
US5462894A (en) * 1991-08-06 1995-10-31 Sgs-Thomson Microelectronics, Inc. Method for fabricating a polycrystalline silicon resistive load element in an integrated circuit
US5273924A (en) * 1991-08-30 1993-12-28 Micron Technology, Inc. Method for forming an SRAM by minimizing diffusion of conductivity enhancing impurities from one region of a polysilicon layer to another region
FR2681978B1 (fr) * 1991-09-26 1993-12-24 Sgs Thomson Microelectronics Sa Resistance de precision et procede de fabrication.
US5212108A (en) * 1991-12-13 1993-05-18 Honeywell Inc. Fabrication of stabilized polysilicon resistors for SEU control
JP3214004B2 (ja) * 1991-12-17 2001-10-02 ソニー株式会社 半導体メモリ装置及びその製法
US5538915A (en) * 1992-06-05 1996-07-23 The Regents Of The University Of California Process for forming synapses in neural networks and resistor therefor
EP0620586B1 (fr) * 1993-04-05 2001-06-20 Denso Corporation Dispositif semi-conducteur comportant une résistance à film mince
US5470779A (en) * 1994-07-25 1995-11-28 Taiwan Semiconductor Manufacturing Company Ltd. Method of manufacture of SRAM with SIPOS resistor
US5661325A (en) * 1994-07-29 1997-08-26 Nkk Corporation SRAM structure
JP2699891B2 (ja) * 1994-10-28 1998-01-19 日本電気株式会社 半導体装置の製造方法
US5506167A (en) * 1995-04-13 1996-04-09 United Microelectronics Corp. Method of making a high resistance drain junction resistor in a SRAM
TW329563B (en) * 1996-06-01 1998-04-11 Winbond Electronics Corp The manufacturing method for load resistors of SRAM
GB2319532B (en) * 1996-11-22 2001-01-31 Trikon Equip Ltd Method and apparatus for treating a semiconductor wafer
GB2319533B (en) 1996-11-22 2001-06-06 Trikon Equip Ltd Methods of forming a barrier layer
US6140198A (en) * 1998-11-06 2000-10-31 United Microelectronics Corp. Method of fabricating load resistor
DE10021095A1 (de) * 2000-04-20 2001-10-31 Infineon Technologies Ag Verfahren zum Bilden eines Dielektrikums auf einem Halbleitersubstrat
JP2006203748A (ja) * 2005-01-24 2006-08-03 Sanyo Electric Co Ltd 駆動回路

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS532552B2 (fr) * 1974-03-30 1978-01-28
JPS5197385A (en) * 1975-02-21 1976-08-26 Handotaisochino seizohoho
JPS6041458B2 (ja) * 1975-04-21 1985-09-17 ソニー株式会社 半導体装置の製造方法
JPS5397791A (en) * 1977-02-07 1978-08-26 Nec Corp Production of semiconductor integrated circuit device
JPS5910581B2 (ja) * 1977-12-01 1984-03-09 富士通株式会社 半導体装置の製造方法
US4408385A (en) * 1978-06-15 1983-10-11 Texas Instruments Incorporated Semiconductor integrated circuit with implanted resistor element in polycrystalline silicon layer
JPS5640269A (en) * 1979-09-11 1981-04-16 Toshiba Corp Preparation of semiconductor device
FR2534415A1 (fr) * 1982-10-07 1984-04-13 Cii Honeywell Bull Procede de fabrication de resistances electriques dans un materiau semi-conducteur polycristallin et dispositif a circuits integres resultant
US4658378A (en) * 1982-12-15 1987-04-14 Inmos Corporation Polysilicon resistor with low thermal activation energy
JPS59152657A (ja) * 1983-02-18 1984-08-31 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 高シ−ト抵抗を有する多結晶シリコン層の形成方法
JPS59161857A (ja) * 1983-03-07 1984-09-12 Hitachi Ltd 半導体装置用配線および抵抗体
US4584026A (en) * 1984-07-25 1986-04-22 Rca Corporation Ion-implantation of phosphorus, arsenic or boron by pre-amorphizing with fluorine ions
JPS61134055A (ja) * 1984-12-04 1986-06-21 Sony Corp 半導体装置の製造方法
JPS61145868A (ja) * 1984-12-20 1986-07-03 Toshiba Corp 半導体装置の製造方法
US4602421A (en) * 1985-04-24 1986-07-29 The United States Of America As Represented By The Secretary Of The Air Force Low noise polycrystalline semiconductor resistors by hydrogen passivation
GB2182488A (en) * 1985-11-02 1987-05-13 Stc Plc Integrated circuit resistors
FR2602093B1 (fr) * 1985-12-27 1988-10-14 Bull Sa Procede de fabrication d'une resistance electrique par dopage d'un materiau semiconducteur et circuit integre en resultant
US4740481A (en) * 1986-01-21 1988-04-26 Motorola Inc. Method of preventing hillock formation in polysilicon layer by oxygen implanation
US4755480A (en) * 1986-02-03 1988-07-05 Intel Corporation Method of making a silicon nitride resistor using plasma enhanced chemical vapor deposition
US4707909A (en) * 1986-08-08 1987-11-24 Siliconix Incorporated Manufacture of trimmable high value polycrystalline silicon resistors
US4762801A (en) * 1987-02-20 1988-08-09 National Semiconductor Corporation Method of fabricating polycrystalline silicon resistors having desired temperature coefficients

Also Published As

Publication number Publication date
NL8801890A (nl) 1989-02-16
US4965214A (en) 1990-10-23
JPS6445158A (en) 1989-02-17
GB2207809A (en) 1989-02-08
DE3825734A1 (de) 1989-04-20
FR2618942A1 (fr) 1989-02-03
DE3825734C2 (fr) 1991-10-02
GB2207809B (en) 1991-04-03
KR890003028A (ko) 1989-04-12
KR900005038B1 (ko) 1990-07-18
GB8818292D0 (en) 1988-09-07

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ST Notification of lapse