NL8403011A - Werkwijze voor het neerslaan van titaansilicide bij lage temperatuur. - Google Patents

Werkwijze voor het neerslaan van titaansilicide bij lage temperatuur. Download PDF

Info

Publication number
NL8403011A
NL8403011A NL8403011A NL8403011A NL8403011A NL 8403011 A NL8403011 A NL 8403011A NL 8403011 A NL8403011 A NL 8403011A NL 8403011 A NL8403011 A NL 8403011A NL 8403011 A NL8403011 A NL 8403011A
Authority
NL
Netherlands
Prior art keywords
titanium
silicon
process according
containing material
gaseous
Prior art date
Application number
NL8403011A
Other languages
English (en)
Dutch (nl)
Original Assignee
Advanced Semiconductor Mat
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Semiconductor Mat filed Critical Advanced Semiconductor Mat
Publication of NL8403011A publication Critical patent/NL8403011A/nl

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/42—Silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0112—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors using conductive layers comprising silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01306—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon
    • H10D64/01308—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon the conductor further comprising a non-elemental silicon additional conductive layer, e.g. a metal silicide layer formed by the reaction of silicon with an implanted metal
    • H10D64/01312—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon the conductor further comprising a non-elemental silicon additional conductive layer, e.g. a metal silicide layer formed by the reaction of silicon with an implanted metal the additional layer comprising a metal or metal silicide formed by deposition, i.e. without a silicidation reaction, e.g. sputter deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical Vapour Deposition (AREA)
NL8403011A 1983-10-31 1984-10-03 Werkwijze voor het neerslaan van titaansilicide bij lage temperatuur. NL8403011A (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/547,050 US4557943A (en) 1983-10-31 1983-10-31 Metal-silicide deposition using plasma-enhanced chemical vapor deposition
US54705083 1983-10-31

Publications (1)

Publication Number Publication Date
NL8403011A true NL8403011A (nl) 1985-05-17

Family

ID=24183136

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8403011A NL8403011A (nl) 1983-10-31 1984-10-03 Werkwijze voor het neerslaan van titaansilicide bij lage temperatuur.

Country Status (6)

Country Link
US (1) US4557943A (OSRAM)
JP (1) JPS6096763A (OSRAM)
DE (1) DE3439853A1 (OSRAM)
FR (1) FR2554132B1 (OSRAM)
GB (1) GB2148946B (OSRAM)
NL (1) NL8403011A (OSRAM)

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US5167986A (en) * 1988-04-15 1992-12-01 Gordon Roy G Titanium silicide-coated glass windows
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JPH06101462B2 (ja) * 1991-04-30 1994-12-12 インターナショナル・ビジネス・マシーンズ・コーポレイション 過フッ化炭化水素ポリマ膜を基板に接着する方法および 基板
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US5947921A (en) * 1995-12-18 1999-09-07 Massachusetts Institute Of Technology Chemical and physical enhancers and ultrasound for transdermal drug delivery
US6002961A (en) * 1995-07-25 1999-12-14 Massachusetts Institute Of Technology Transdermal protein delivery using low-frequency sonophoresis
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JPH09111460A (ja) * 1995-10-11 1997-04-28 Anelva Corp チタン系導電性薄膜の作製方法
JP2002515786A (ja) 1996-06-28 2002-05-28 ソントラ メディカル，エル．ピー． 経皮輸送の超音波増強
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Also Published As

Publication number Publication date
JPS6096763A (ja) 1985-05-30
GB2148946A (en) 1985-06-05
GB2148946B (en) 1986-02-26
FR2554132A1 (fr) 1985-05-03
JPS643949B2 (OSRAM) 1989-01-24
DE3439853A1 (de) 1985-05-09
FR2554132B1 (fr) 1988-09-23
US4557943A (en) 1985-12-10
GB8426071D0 (en) 1984-11-21

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BB A search report has been drawn up
BC A request for examination has been filed
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