NL8303684A - Onderdeel op basis van siliciumcarbide voor het vervaardigen van halfgeleiders. - Google Patents
Onderdeel op basis van siliciumcarbide voor het vervaardigen van halfgeleiders. Download PDFInfo
- Publication number
- NL8303684A NL8303684A NL8303684A NL8303684A NL8303684A NL 8303684 A NL8303684 A NL 8303684A NL 8303684 A NL8303684 A NL 8303684A NL 8303684 A NL8303684 A NL 8303684A NL 8303684 A NL8303684 A NL 8303684A
- Authority
- NL
- Netherlands
- Prior art keywords
- ppm
- silicon carbide
- content
- total
- impurities
- Prior art date
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 69
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 64
- 239000004065 semiconductor Substances 0.000 title claims description 55
- 238000004519 manufacturing process Methods 0.000 title claims description 28
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 26
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 25
- 239000011651 chromium Substances 0.000 claims description 19
- 229910052742 iron Inorganic materials 0.000 claims description 19
- 229910052759 nickel Inorganic materials 0.000 claims description 19
- 229910052783 alkali metal Inorganic materials 0.000 claims description 18
- 229910052804 chromium Inorganic materials 0.000 claims description 16
- 229910052720 vanadium Inorganic materials 0.000 claims description 14
- 229910001385 heavy metal Inorganic materials 0.000 claims description 10
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 10
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 6
- 238000012545 processing Methods 0.000 claims description 5
- 239000012535 impurity Substances 0.000 description 65
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 27
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 27
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 27
- 239000007789 gas Substances 0.000 description 23
- 239000000047 product Substances 0.000 description 20
- 238000000746 purification Methods 0.000 description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 17
- 229910052710 silicon Inorganic materials 0.000 description 16
- 239000010703 silicon Substances 0.000 description 16
- 239000000463 material Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 11
- 239000002245 particle Substances 0.000 description 11
- 150000001340 alkali metals Chemical class 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000008187 granular material Substances 0.000 description 6
- 239000007858 starting material Substances 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 5
- 239000005011 phenolic resin Substances 0.000 description 5
- 229920001568 phenolic resin Polymers 0.000 description 5
- 229910052700 potassium Inorganic materials 0.000 description 5
- 238000005507 spraying Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000011148 porous material Substances 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 229910052708 sodium Inorganic materials 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000006229 carbon black Substances 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910017060 Fe Cr Inorganic materials 0.000 description 2
- 229910003251 Na K Inorganic materials 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 238000011835 investigation Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 238000011403 purification operation Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 238000010183 spectrum analysis Methods 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000006233 lamp black Substances 0.000 description 1
- 239000002075 main ingredient Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000012264 purified product Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000007873 sieving Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/10—Reaction chambers; Selection of materials therefor
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
- C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
- C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
- C04B35/573—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide obtained by reaction sintering or recrystallisation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/08—Reaction chambers; Selection of materials therefor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Manufacturing & Machinery (AREA)
- Structural Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Ceramic Products (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18980082A JPS5978529A (ja) | 1982-10-28 | 1982-10-28 | 半導体製造用炭化珪素質材料 |
| JP18980082 | 1982-10-28 | ||
| JP9048383 | 1983-05-23 | ||
| JP58090483A JPS59217613A (ja) | 1983-05-23 | 1983-05-23 | 半導体製造用炭化珪素質材料 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8303684A true NL8303684A (nl) | 1984-05-16 |
Family
ID=26431963
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8303684A NL8303684A (nl) | 1982-10-28 | 1983-10-26 | Onderdeel op basis van siliciumcarbide voor het vervaardigen van halfgeleiders. |
Country Status (5)
| Country | Link |
|---|---|
| DE (1) | DE3338755A1 (de) |
| FR (1) | FR2535312B1 (de) |
| GB (1) | GB2130192B (de) |
| IT (1) | IT1169895B (de) |
| NL (1) | NL8303684A (de) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60138913A (ja) * | 1983-12-26 | 1985-07-23 | Toshiba Ceramics Co Ltd | 半導体拡散炉管の製造方法 |
| JPS6169116A (ja) * | 1984-09-13 | 1986-04-09 | Toshiba Ceramics Co Ltd | シリコンウエハ−の連続ｃｖｄコ−テイング用サセプター |
| JPS6212666A (ja) * | 1985-07-09 | 1987-01-21 | 東芝セラミツクス株式会社 | 半導体用炉芯管の製造方法 |
| JPH0521297Y2 (de) * | 1986-07-31 | 1993-06-01 | ||
| US4999228A (en) * | 1988-05-06 | 1991-03-12 | Shin-Etsu Chemical Co., Ltd. | Silicon carbide diffusion tube for semi-conductor |
| US5332702A (en) * | 1993-04-16 | 1994-07-26 | Corning Incorporated | Low sodium zircon refractory and fused silica process |
| US5770324A (en) * | 1997-03-03 | 1998-06-23 | Saint-Gobain Industrial Ceramics, Inc. | Method of using a hot pressed silicon carbide dummy wafer |
| US6572700B2 (en) | 1997-12-26 | 2003-06-03 | Sumitomo Electric Industries, Ltd. | Semiconductor crystal, and method and apparatus of production thereof |
| JP4135239B2 (ja) * | 1997-12-26 | 2008-08-20 | 住友電気工業株式会社 | 半導体結晶およびその製造方法ならびに製造装置 |
| US6296716B1 (en) | 1999-10-01 | 2001-10-02 | Saint-Gobain Ceramics And Plastics, Inc. | Process for cleaning ceramic articles |
| AU2001277074A1 (en) * | 2000-07-24 | 2002-02-05 | Saint-Gobain Ceramics And Plastics, Inc. | Process for cleaning ceramic articles |
| US20030233977A1 (en) * | 2002-06-20 | 2003-12-25 | Yeshwanth Narendar | Method for forming semiconductor processing components |
| US7501370B2 (en) | 2004-01-06 | 2009-03-10 | Saint-Gobain Ceramics & Plastics, Inc. | High purity silicon carbide wafer boats |
| US8058174B2 (en) | 2007-12-20 | 2011-11-15 | Coorstek, Inc. | Method for treating semiconductor processing components and components formed thereby |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1219625A (fr) * | 1958-04-03 | 1960-05-18 | Wacker Chemie Gmbh | Procédé de fabrication d'objets de forme déterminée en carbure de silicium trèspur |
| JPS5722914B2 (de) * | 1974-08-27 | 1982-05-15 | ||
| US3951587A (en) * | 1974-12-06 | 1976-04-20 | Norton Company | Silicon carbide diffusion furnace components |
| JPS5222477A (en) * | 1975-08-13 | 1977-02-19 | Toshiba Ceramics Co Ltd | Sic-si type equalizing tube for manufacturing gas impermeable semi conductors |
| JPS5277590A (en) * | 1975-12-24 | 1977-06-30 | Toshiba Corp | Semiconductor producing device |
| JPS5848487B2 (ja) * | 1976-03-31 | 1983-10-28 | 東芝セラミツクス株式会社 | 高純度炭化珪素粉末の製造方法 |
| US4123286A (en) * | 1976-12-27 | 1978-10-31 | The Carborundum Company | Silicon carbide powder compositions |
| JPS55158622A (en) * | 1979-05-30 | 1980-12-10 | Toshiba Ceramics Co Ltd | Manufacture of silicon carbide material for semiconductor |
-
1983
- 1983-10-25 GB GB08328426A patent/GB2130192B/en not_active Expired
- 1983-10-25 IT IT23430/83A patent/IT1169895B/it active
- 1983-10-25 DE DE19833338755 patent/DE3338755A1/de not_active Ceased
- 1983-10-26 FR FR8317099A patent/FR2535312B1/fr not_active Expired
- 1983-10-26 NL NL8303684A patent/NL8303684A/nl active Search and Examination
Also Published As
| Publication number | Publication date |
|---|---|
| FR2535312B1 (fr) | 1986-11-14 |
| IT1169895B (it) | 1987-06-03 |
| FR2535312A1 (fr) | 1984-05-04 |
| GB8328426D0 (en) | 1983-11-23 |
| GB2130192B (en) | 1987-01-07 |
| GB2130192A (en) | 1984-05-31 |
| DE3338755A1 (de) | 1984-05-03 |
| IT8323430A0 (it) | 1983-10-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A1A | A request for search or an international-type search has been filed | ||
| A85 | Still pending on 85-01-01 | ||
| BB | A search report has been drawn up | ||
| BC | A request for examination has been filed | ||
| BN | A decision not to publish the application has become irrevocable |