IT1169895B - Elemento stampato a base di carburo di silicio per l'uso nella fabbricazione di un semiconduttore - Google Patents
Elemento stampato a base di carburo di silicio per l'uso nella fabbricazione di un semiconduttoreInfo
- Publication number
- IT1169895B IT1169895B IT23430/83A IT2343083A IT1169895B IT 1169895 B IT1169895 B IT 1169895B IT 23430/83 A IT23430/83 A IT 23430/83A IT 2343083 A IT2343083 A IT 2343083A IT 1169895 B IT1169895 B IT 1169895B
- Authority
- IT
- Italy
- Prior art keywords
- semiconductor
- manufacture
- silicon carbide
- carbide element
- printed silicon
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title 1
- 229910010271 silicon carbide Inorganic materials 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/10—Reaction chambers; Selection of materials therefor
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
- C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
- C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
- C04B35/573—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide obtained by reaction sintering or recrystallisation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/08—Reaction chambers; Selection of materials therefor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Manufacturing & Machinery (AREA)
- Structural Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Ceramic Products (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18980082A JPS5978529A (ja) | 1982-10-28 | 1982-10-28 | 半導体製造用炭化珪素質材料 |
JP58090483A JPS59217613A (ja) | 1983-05-23 | 1983-05-23 | 半導体製造用炭化珪素質材料 |
Publications (2)
Publication Number | Publication Date |
---|---|
IT8323430A0 IT8323430A0 (it) | 1983-10-25 |
IT1169895B true IT1169895B (it) | 1987-06-03 |
Family
ID=26431963
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT23430/83A IT1169895B (it) | 1982-10-28 | 1983-10-25 | Elemento stampato a base di carburo di silicio per l'uso nella fabbricazione di un semiconduttore |
Country Status (5)
Country | Link |
---|---|
DE (1) | DE3338755A1 (de) |
FR (1) | FR2535312B1 (de) |
GB (1) | GB2130192B (de) |
IT (1) | IT1169895B (de) |
NL (1) | NL8303684A (de) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60138913A (ja) * | 1983-12-26 | 1985-07-23 | Toshiba Ceramics Co Ltd | 半導体拡散炉管の製造方法 |
JPS6169116A (ja) * | 1984-09-13 | 1986-04-09 | Toshiba Ceramics Co Ltd | シリコンウエハ−の連続cvdコ−テイング用サセプター |
JPS6212666A (ja) * | 1985-07-09 | 1987-01-21 | 東芝セラミツクス株式会社 | 半導体用炉芯管の製造方法 |
JPH0521297Y2 (de) * | 1986-07-31 | 1993-06-01 | ||
US4999228A (en) * | 1988-05-06 | 1991-03-12 | Shin-Etsu Chemical Co., Ltd. | Silicon carbide diffusion tube for semi-conductor |
US5332702A (en) * | 1993-04-16 | 1994-07-26 | Corning Incorporated | Low sodium zircon refractory and fused silica process |
US5770324A (en) * | 1997-03-03 | 1998-06-23 | Saint-Gobain Industrial Ceramics, Inc. | Method of using a hot pressed silicon carbide dummy wafer |
US6572700B2 (en) | 1997-12-26 | 2003-06-03 | Sumitomo Electric Industries, Ltd. | Semiconductor crystal, and method and apparatus of production thereof |
JP4135239B2 (ja) * | 1997-12-26 | 2008-08-20 | 住友電気工業株式会社 | 半導体結晶およびその製造方法ならびに製造装置 |
US6296716B1 (en) | 1999-10-01 | 2001-10-02 | Saint-Gobain Ceramics And Plastics, Inc. | Process for cleaning ceramic articles |
AU2001277074A1 (en) * | 2000-07-24 | 2002-02-05 | Saint-Gobain Ceramics And Plastics, Inc. | Process for cleaning ceramic articles |
US20030233977A1 (en) * | 2002-06-20 | 2003-12-25 | Yeshwanth Narendar | Method for forming semiconductor processing components |
US7501370B2 (en) | 2004-01-06 | 2009-03-10 | Saint-Gobain Ceramics & Plastics, Inc. | High purity silicon carbide wafer boats |
US8058174B2 (en) | 2007-12-20 | 2011-11-15 | Coorstek, Inc. | Method for treating semiconductor processing components and components formed thereby |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1219625A (fr) * | 1958-04-03 | 1960-05-18 | Wacker Chemie Gmbh | Procédé de fabrication d'objets de forme déterminée en carbure de silicium trèspur |
JPS5722914B2 (de) * | 1974-08-27 | 1982-05-15 | ||
US3951587A (en) * | 1974-12-06 | 1976-04-20 | Norton Company | Silicon carbide diffusion furnace components |
JPS5222477A (en) * | 1975-08-13 | 1977-02-19 | Toshiba Ceramics Co Ltd | Sic-si type equalizing tube for manufacturing gas impermeable semi conductors |
JPS5277590A (en) * | 1975-12-24 | 1977-06-30 | Toshiba Corp | Semiconductor producing device |
JPS5848487B2 (ja) * | 1976-03-31 | 1983-10-28 | 東芝セラミツクス株式会社 | 高純度炭化珪素粉末の製造方法 |
US4123286A (en) * | 1976-12-27 | 1978-10-31 | The Carborundum Company | Silicon carbide powder compositions |
JPS55158622A (en) * | 1979-05-30 | 1980-12-10 | Toshiba Ceramics Co Ltd | Manufacture of silicon carbide material for semiconductor |
-
1983
- 1983-10-25 GB GB08328426A patent/GB2130192B/en not_active Expired
- 1983-10-25 IT IT23430/83A patent/IT1169895B/it active
- 1983-10-25 DE DE19833338755 patent/DE3338755A1/de not_active Ceased
- 1983-10-26 FR FR8317099A patent/FR2535312B1/fr not_active Expired
- 1983-10-26 NL NL8303684A patent/NL8303684A/nl active Search and Examination
Also Published As
Publication number | Publication date |
---|---|
FR2535312B1 (fr) | 1986-11-14 |
FR2535312A1 (fr) | 1984-05-04 |
GB8328426D0 (en) | 1983-11-23 |
GB2130192B (en) | 1987-01-07 |
GB2130192A (en) | 1984-05-31 |
DE3338755A1 (de) | 1984-05-03 |
IT8323430A0 (it) | 1983-10-25 |
NL8303684A (nl) | 1984-05-16 |
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Legal Events
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TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19971030 |