JPS55158622A - Manufacture of silicon carbide material for semiconductor - Google Patents
Manufacture of silicon carbide material for semiconductorInfo
- Publication number
- JPS55158622A JPS55158622A JP6706979A JP6706979A JPS55158622A JP S55158622 A JPS55158622 A JP S55158622A JP 6706979 A JP6706979 A JP 6706979A JP 6706979 A JP6706979 A JP 6706979A JP S55158622 A JPS55158622 A JP S55158622A
- Authority
- JP
- Japan
- Prior art keywords
- silicon carbide
- tube
- product
- calcined
- heater
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title abstract 5
- 229910010271 silicon carbide Inorganic materials 0.000 title abstract 5
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000463 material Substances 0.000 title 1
- 238000001354 calcination Methods 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 239000002253 acid Substances 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 229910052736 halogen Inorganic materials 0.000 abstract 1
- 150000002367 halogens Chemical class 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910017604 nitric acid Inorganic materials 0.000 abstract 1
- 239000011271 tar pitch Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Products (AREA)
Abstract
PURPOSE:To obtain a process tube adapted for fabricating a semiconductor by forming silicon carbide, then dividing it into two when calcining the silicon carbide, treating it with reducing halogen-containing gas or strong acid between primary and secondary calcining steps to fix the internal impurity metal therein. CONSTITUTION:After mixing tar pitch with silicon carbide, the mixture is calcined primarily at 1,000 deg.C to form a tubular primary product 14, the product 14 is then inserted into a furnace 12 containing internally a heater 11, and placed on a support 15 in a certain pure silicon carbide outer cylinder furnace core tube 13. Then, quartz glass cups 16, 17 are engaged at both ends of the tube 13, the heater 11 is heated to increase the temperature in the tube 13 to 1,300 deg.C, reducing gas containing 5 of HCl/O2 ratio is fed from the cup 16 into the tube 13, to purify the primary product 14 form 30 hours. Thereafter, the surface of the product 14 is cleaned with mixture of HF, HNO3, H2O to alter the atmosphere into high purity Si, and it is calcined secondarily. In this manner, Ga, Al or the like contained therein become stable oxide, and do not externally disperse.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6706979A JPS55158622A (en) | 1979-05-30 | 1979-05-30 | Manufacture of silicon carbide material for semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6706979A JPS55158622A (en) | 1979-05-30 | 1979-05-30 | Manufacture of silicon carbide material for semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55158622A true JPS55158622A (en) | 1980-12-10 |
| JPS6310576B2 JPS6310576B2 (en) | 1988-03-08 |
Family
ID=13334183
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6706979A Granted JPS55158622A (en) | 1979-05-30 | 1979-05-30 | Manufacture of silicon carbide material for semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55158622A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3338755A1 (en) * | 1982-10-28 | 1984-05-03 | Toshiba Ceramics Co., Ltd., Tokio/Topkyo | SHAPED BODY BASED ON SILICON CARBIDE FOR USE IN SEMICONDUCTOR PRODUCTION |
| JPS60246264A (en) * | 1984-05-23 | 1985-12-05 | 東芝セラミツクス株式会社 | Manufacture of silicon carbide material |
| US5179049A (en) * | 1990-11-20 | 1993-01-12 | Asahi Glass Company Ltd. | Heat treating apparatuses for semiconductors and high purity silicon carbide parts for the apparatuses and a method of making thereof |
| US6419757B2 (en) | 1998-12-08 | 2002-07-16 | Bridgestone, Corporation | Method for cleaning sintered silicon carbide in wet condition |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5236977A (en) * | 1975-09-19 | 1977-03-22 | Tokai Carbon Co Ltd | Semiconductor heating furnace tube and process for production of same |
| JPS52145419A (en) * | 1976-05-29 | 1977-12-03 | Toshiba Ceramics Co | Manufacture of silicon carbide articles for semiconductor production |
| JPS5384013A (en) * | 1976-12-27 | 1978-07-25 | Carborundum Co | Silicon carbide powder composition |
| JPS53130711A (en) * | 1977-04-21 | 1978-11-15 | Denki Kagaku Kogyo Kk | Manufacture of silicone carbide molds |
| JPS54133504A (en) * | 1978-04-10 | 1979-10-17 | Ibigawa Electric Ind Co Ltd | Manufacture of high density carborundum sintered body |
-
1979
- 1979-05-30 JP JP6706979A patent/JPS55158622A/en active Granted
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5236977A (en) * | 1975-09-19 | 1977-03-22 | Tokai Carbon Co Ltd | Semiconductor heating furnace tube and process for production of same |
| JPS52145419A (en) * | 1976-05-29 | 1977-12-03 | Toshiba Ceramics Co | Manufacture of silicon carbide articles for semiconductor production |
| JPS5384013A (en) * | 1976-12-27 | 1978-07-25 | Carborundum Co | Silicon carbide powder composition |
| JPS53130711A (en) * | 1977-04-21 | 1978-11-15 | Denki Kagaku Kogyo Kk | Manufacture of silicone carbide molds |
| JPS54133504A (en) * | 1978-04-10 | 1979-10-17 | Ibigawa Electric Ind Co Ltd | Manufacture of high density carborundum sintered body |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3338755A1 (en) * | 1982-10-28 | 1984-05-03 | Toshiba Ceramics Co., Ltd., Tokio/Topkyo | SHAPED BODY BASED ON SILICON CARBIDE FOR USE IN SEMICONDUCTOR PRODUCTION |
| JPS60246264A (en) * | 1984-05-23 | 1985-12-05 | 東芝セラミツクス株式会社 | Manufacture of silicon carbide material |
| US5179049A (en) * | 1990-11-20 | 1993-01-12 | Asahi Glass Company Ltd. | Heat treating apparatuses for semiconductors and high purity silicon carbide parts for the apparatuses and a method of making thereof |
| US6419757B2 (en) | 1998-12-08 | 2002-07-16 | Bridgestone, Corporation | Method for cleaning sintered silicon carbide in wet condition |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6310576B2 (en) | 1988-03-08 |
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