GB1059354A - The production of monocrystalline semiconductor bodies of silicon or germanium - Google Patents

The production of monocrystalline semiconductor bodies of silicon or germanium

Info

Publication number
GB1059354A
GB1059354A GB3163663A GB3163663A GB1059354A GB 1059354 A GB1059354 A GB 1059354A GB 3163663 A GB3163663 A GB 3163663A GB 3163663 A GB3163663 A GB 3163663A GB 1059354 A GB1059354 A GB 1059354A
Authority
GB
United Kingdom
Prior art keywords
core
treated
axis
hno3
give
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3163663A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Publication of GB1059354A publication Critical patent/GB1059354A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/08—Etching
    • C30B33/12—Etching in gas atmosphere or plasma

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

Germanium is deposited epitaxially from a gas on to a heated monocrystalline Ge core which has its longitudinal axis parallel to the [111] or [100] crystal axis and has been treated by removal of material from its surface so that it has a uniform cross-section and is free from surface crystal dislocations. With a [111] axis, the core may be treated to give a hexagonal prism, 3 of whose edges coincide with the "growth seams" visible on a core obtained by zone melting or crystal pulling; the grown rod is then symetrically staggered with respect to the core. With a [100] axis, the core may be treated to give an octagonal prism. Alternatively, the core may remain cylindrical, the treatment merely removing dislocated regions. The treatment may be mechanical (e.g. grinding, electron and/or ion bombardment, sand blasting with quartz sand, or polishing) followed by chemical etching (e.g. with an etchant produced by shifting the equilibrium of the reactant gases, or with a mixture of 65% HNO3 and 38-40% HF) which is continued until bubble formation subsides, or may be stopped, e.g. with HNO3.ALSO:Silicon is deposited epitaxially from a gas on to a heated monocrystalline Si core which has its longitudinal axis parallel to the [111] or [100] crystal axis and has been treated by removal of material from its surface so that it has a uniform cross-section and is free from surface crystal dislocations. With a [111] axis, the core may be treated to give a hexagonal prism, 3 of whose edges coincide with the "growth seams" visible on a core obtained by zone melting or crystal pulling; the grown rod is then symmetrically staggered with respect to the core. With a [100] axis, the core may be treated to give an octagonal prism. Alternatively, the core may remain cylindrical, the treatment merely removing dislocated regions. The treatment may be mechanical (e.g. grinding, electron and/or ion bombardment, sand-blasting with quartz sand, or polishing), followed by chemical etching (e.g. with an etchant produced by shifting the equilibrium of the reactant gases, or with a mixture of 65% HNO3 and 38-40% HF) which is continued until bubble formation subsides, or may be stopped, e.g. with HNO3. The gas stream may be 2000 litres/hr. of SiH3Cl and H2 in the ratio 1 : 10 and the cone is heated at 1185\sB5 DEG C.
GB3163663A 1962-08-09 1963-08-09 The production of monocrystalline semiconductor bodies of silicon or germanium Expired GB1059354A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DES0080823 1962-08-09
DE1962S0080852 DE1279662B (en) 1962-08-09 1962-08-10 Process for growing semiconductor material from the gas phase
DES0084354 1963-03-26

Publications (1)

Publication Number Publication Date
GB1059354A true GB1059354A (en) 1967-02-22

Family

ID=27212781

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3163663A Expired GB1059354A (en) 1962-08-09 1963-08-09 The production of monocrystalline semiconductor bodies of silicon or germanium

Country Status (4)

Country Link
BE (1) BE634742A (en)
CH (1) CH421912A (en)
DE (2) DE1279662B (en)
GB (1) GB1059354A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101655427B (en) * 2009-09-04 2012-08-01 中国电子科技集团公司第四十六研究所 Dislocation corrosion detecting method of single germanium wafer

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1048638B (en) * 1957-07-02 1959-01-15 Siemens &. Halske Aktiengesellschaft, Berlin und München Process for the production of semiconductor single crystals, in particular silicon, by thermal decomposition or reduction

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101655427B (en) * 2009-09-04 2012-08-01 中国电子科技集团公司第四十六研究所 Dislocation corrosion detecting method of single germanium wafer

Also Published As

Publication number Publication date
DE1279662B (en) 1968-10-10
BE634742A (en)
CH421912A (en) 1966-10-15
DE1444534A1 (en) 1969-01-23
DE1444534B2 (en) 1971-07-01

Similar Documents

Publication Publication Date Title
GB1180187A (en) Improvements in or relating to Vapor Phase Etching and Polishing of Semiconductors
US2938772A (en) Method of producing extremely pure silicon
GB991370A (en) Semi-conductor material and method of manufacture
US5279701A (en) Method for the growth of silicon carbide single crystals
US3669774A (en) Low temperature silicon etch
US3679502A (en) Gaseous nonpreferential etching of silicon
GB1059354A (en) The production of monocrystalline semiconductor bodies of silicon or germanium
JPS57194518A (en) Manufacture of polycrystalline silicon
JPS60138915A (en) Furnace core tube of silicon carbide
US2705192A (en) Etching solutions and process for etching members therewith
GB1059960A (en) The production of semi-conductor rods
GB1002697A (en) Improvements in or relating to the production of planar semi-conductor surfaces
JPS57174466A (en) Dry etching method
GB1060474A (en) The production of monocrystalline semiconductor bodies of silicon or germanium
JPS577923A (en) Manufacture of receiving table for processing single silicon crystal wafer
US3900363A (en) Method of making crystal
JPS5753930A (en) Device for chemical gaseous-phase growing
Seifert Electron Microscopy of Etched Plagiodase Feldspar
JPS6437028A (en) Manufacture of semiconductor element
GB1007555A (en) Semiconductor material
JPS644015A (en) Thin-film formation device
GB977677A (en) Improvements in methods for manufacturing semiconductor devices
GB912838A (en) Method of manufacturing monocrystals, particularly of semiconductor material
US3292574A (en) Apparatus for pyrolytic precipitation of semi-conductor material from a gaseous compound thereof
JPS5491059A (en) Etching method for phosphorus glass by plasma etching