NL8202686A - Werkwijze ter vervaardiging van een veldeffektinrichting met geisoleerde stuurelektrode, en inrichting vervaardigd volgens de werkwijze. - Google Patents
Werkwijze ter vervaardiging van een veldeffektinrichting met geisoleerde stuurelektrode, en inrichting vervaardigd volgens de werkwijze. Download PDFInfo
- Publication number
- NL8202686A NL8202686A NL8202686A NL8202686A NL8202686A NL 8202686 A NL8202686 A NL 8202686A NL 8202686 A NL8202686 A NL 8202686A NL 8202686 A NL8202686 A NL 8202686A NL 8202686 A NL8202686 A NL 8202686A
- Authority
- NL
- Netherlands
- Prior art keywords
- layer
- oxidation
- parts
- silicon
- silicon layer
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 45
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 63
- 229910052710 silicon Inorganic materials 0.000 claims description 63
- 239000010703 silicon Substances 0.000 claims description 63
- 230000003647 oxidation Effects 0.000 claims description 27
- 238000007254 oxidation reaction Methods 0.000 claims description 27
- 238000005530 etching Methods 0.000 claims description 25
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 17
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 14
- 238000002513 implantation Methods 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 150000002500 ions Chemical class 0.000 claims description 9
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 9
- 230000005669 field effect Effects 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- -1 phosphor ions Chemical class 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical group [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 108091006146 Channels Proteins 0.000 description 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- 235000008331 Pinus X rigitaeda Nutrition 0.000 description 1
- 235000011613 Pinus brutia Nutrition 0.000 description 1
- 241000018646 Pinus brutia Species 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7834—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with a non-planar structure, e.g. the gate or the source or the drain being non-planar
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8202686A NL8202686A (nl) | 1982-07-05 | 1982-07-05 | Werkwijze ter vervaardiging van een veldeffektinrichting met geisoleerde stuurelektrode, en inrichting vervaardigd volgens de werkwijze. |
| DE8383200968T DE3366266D1 (en) | 1982-07-05 | 1983-06-29 | Method of manufacturing an insulated gate field effect device and device manufactured by the method |
| EP83200968A EP0098652B1 (de) | 1982-07-05 | 1983-06-29 | Verfahren zur Herstellung eines Feldeffekttransistors mit einem isolierten Gate und nach diesem Verfahren hergestellte Anordnung |
| CA000431567A CA1206625A (en) | 1982-07-05 | 1983-06-30 | Method of manufacturing an insulated gate field effect transistor having source and drain extension regions |
| JP58120420A JPS5922366A (ja) | 1982-07-05 | 1983-07-04 | 絶縁ゲ−ト電界効果デバイスの製造方法 |
| US06/648,603 US4545110A (en) | 1982-07-05 | 1984-09-07 | Method of manufacturing an insulated gate field effect device |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8202686A NL8202686A (nl) | 1982-07-05 | 1982-07-05 | Werkwijze ter vervaardiging van een veldeffektinrichting met geisoleerde stuurelektrode, en inrichting vervaardigd volgens de werkwijze. |
| NL8202686 | 1982-07-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8202686A true NL8202686A (nl) | 1984-02-01 |
Family
ID=19839970
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8202686A NL8202686A (nl) | 1982-07-05 | 1982-07-05 | Werkwijze ter vervaardiging van een veldeffektinrichting met geisoleerde stuurelektrode, en inrichting vervaardigd volgens de werkwijze. |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4545110A (de) |
| EP (1) | EP0098652B1 (de) |
| JP (1) | JPS5922366A (de) |
| CA (1) | CA1206625A (de) |
| DE (1) | DE3366266D1 (de) |
| NL (1) | NL8202686A (de) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL8302541A (nl) * | 1983-07-15 | 1985-02-01 | Philips Nv | Werkwijze ter vervaardiging van een halfgeleiderinrichting, en halfgeleiderinrichting vervaardigd volgens de werkwijze. |
| NL8400224A (nl) * | 1984-01-25 | 1985-08-16 | Philips Nv | Werkwijze ter vervaardiging van een halfgeleiderinrichting en inrichting vervaardigd door toepassing daarvan. |
| NL8402223A (nl) * | 1984-07-13 | 1986-02-03 | Philips Nv | Werkwijze ter vervaardiging van een halfgeleiderinrichting en inrichting, vervaardigd door toepassing daarvan. |
| NL8402859A (nl) * | 1984-09-18 | 1986-04-16 | Philips Nv | Werkwijze voor het vervaardigen van submicrongroeven in bijvoorbeeld halfgeleidermateriaal en met deze werkwijze verkregen inrichtingen. |
| FR2573919B1 (fr) * | 1984-11-06 | 1987-07-17 | Thomson Csf | Procede de fabrication de grilles pour circuit integre |
| JPS61140122A (ja) * | 1984-12-13 | 1986-06-27 | Mitsubishi Electric Corp | 負荷時タツプ切換装置 |
| US4653173A (en) * | 1985-03-04 | 1987-03-31 | Signetics Corporation | Method of manufacturing an insulated gate field effect device |
| GB2172743B (en) * | 1985-03-23 | 1988-11-16 | Stc Plc | Improvements in integrated circuits |
| US4649629A (en) * | 1985-07-29 | 1987-03-17 | Thomson Components - Mostek Corp. | Method of late programming a read only memory |
| NL8700640A (nl) * | 1987-03-18 | 1988-10-17 | Philips Nv | Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan. |
| JPS63262873A (ja) * | 1987-04-21 | 1988-10-31 | Fuji Xerox Co Ltd | 半導体装置 |
| GB2215515A (en) * | 1988-03-14 | 1989-09-20 | Philips Electronic Associated | A lateral insulated gate field effect transistor and a method of manufacture |
| JPH0258206A (ja) * | 1988-08-23 | 1990-02-27 | Mitsubishi Electric Corp | 負荷時タップ切換装置 |
| EP0452720A3 (en) * | 1990-04-02 | 1994-10-26 | Nat Semiconductor Corp | A semiconductor structure and method of its manufacture |
| US5039621A (en) * | 1990-06-08 | 1991-08-13 | Texas Instruments Incorporated | Semiconductor over insulator mesa and method of forming the same |
| DE69505348T2 (de) * | 1995-02-21 | 1999-03-11 | St Microelectronics Srl | Hochspannungs-MOSFET mit Feldplatten-Elektrode und Verfahren zur Herstellung |
| US5888873A (en) * | 1996-11-06 | 1999-03-30 | Advanced Micro Devices, Inc. | Method of manufacturing short channel MOS devices |
| US6525340B2 (en) * | 2001-06-04 | 2003-02-25 | International Business Machines Corporation | Semiconductor device with junction isolation |
| US7166867B2 (en) | 2003-12-05 | 2007-01-23 | International Rectifier Corporation | III-nitride device with improved layout geometry |
| JP2006275124A (ja) * | 2005-03-29 | 2006-10-12 | Shinwa Sangyo Co Ltd | 都市ガス用ガスコック |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5284981A (en) * | 1976-01-06 | 1977-07-14 | Mitsubishi Electric Corp | Production of insulated gate type semiconductor device |
| JPS54140483A (en) * | 1978-04-21 | 1979-10-31 | Nec Corp | Semiconductor device |
| US4173818A (en) * | 1978-05-30 | 1979-11-13 | International Business Machines Corporation | Method for fabricating transistor structures having very short effective channels |
| JPS5621372A (en) * | 1979-07-31 | 1981-02-27 | Fujitsu Ltd | Manufacture of semiconductor device |
| NL187328C (nl) * | 1980-12-23 | 1991-08-16 | Philips Nv | Werkwijze ter vervaardiging van een halfgeleiderinrichting. |
| US4419809A (en) * | 1981-12-30 | 1983-12-13 | International Business Machines Corporation | Fabrication process of sub-micrometer channel length MOSFETs |
-
1982
- 1982-07-05 NL NL8202686A patent/NL8202686A/nl not_active Application Discontinuation
-
1983
- 1983-06-29 DE DE8383200968T patent/DE3366266D1/de not_active Expired
- 1983-06-29 EP EP83200968A patent/EP0098652B1/de not_active Expired
- 1983-06-30 CA CA000431567A patent/CA1206625A/en not_active Expired
- 1983-07-04 JP JP58120420A patent/JPS5922366A/ja active Pending
-
1984
- 1984-09-07 US US06/648,603 patent/US4545110A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US4545110A (en) | 1985-10-08 |
| DE3366266D1 (en) | 1986-10-23 |
| EP0098652B1 (de) | 1986-09-17 |
| EP0098652A3 (en) | 1984-02-22 |
| JPS5922366A (ja) | 1984-02-04 |
| EP0098652A2 (de) | 1984-01-18 |
| CA1206625A (en) | 1986-06-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A1B | A search report has been drawn up | ||
| A85 | Still pending on 85-01-01 | ||
| BT | A notification was added to the application dossier and made available to the public | ||
| BV | The patent application has lapsed |