NL8104862A - Halfgeleiderinrichting, en werkwijze ter vervaardiging daarvan. - Google Patents
Halfgeleiderinrichting, en werkwijze ter vervaardiging daarvan. Download PDFInfo
- Publication number
- NL8104862A NL8104862A NL8104862A NL8104862A NL8104862A NL 8104862 A NL8104862 A NL 8104862A NL 8104862 A NL8104862 A NL 8104862A NL 8104862 A NL8104862 A NL 8104862A NL 8104862 A NL8104862 A NL 8104862A
- Authority
- NL
- Netherlands
- Prior art keywords
- island
- semiconductor device
- layer
- islands
- dopant
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 27
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000010410 layer Substances 0.000 claims description 92
- 239000000758 substrate Substances 0.000 claims description 19
- 238000009792 diffusion process Methods 0.000 claims description 18
- 230000005669 field effect Effects 0.000 claims description 15
- 239000002019 doping agent Substances 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 229910052785 arsenic Inorganic materials 0.000 claims description 11
- 229910052796 boron Inorganic materials 0.000 claims description 11
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 10
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 10
- 229910052698 phosphorus Inorganic materials 0.000 claims description 10
- 239000011574 phosphorus Substances 0.000 claims description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 9
- 239000002344 surface layer Substances 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 4
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 3
- 230000000295 complement effect Effects 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 238000002513 implantation Methods 0.000 description 10
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 150000002500 ions Chemical class 0.000 description 8
- 230000002349 favourable effect Effects 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- -1 phosphorus ions Chemical class 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 238000012856 packing Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 108091006146 Channels Proteins 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000009933 burial Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000009429 distress Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0635—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors and diodes, or resistors, or capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL8104862A NL8104862A (nl) | 1981-10-28 | 1981-10-28 | Halfgeleiderinrichting, en werkwijze ter vervaardiging daarvan. |
CA000413778A CA1203639A (fr) | 1981-10-28 | 1982-10-19 | Dispositif semiconducteur, et sa fabrication |
JP57186217A JPS5880851A (ja) | 1981-10-28 | 1982-10-25 | 半導体装置とその製造方法 |
AU89763/82A AU550102B2 (en) | 1981-10-28 | 1982-10-25 | Semiconductor integrated circuit device |
IE2570/82A IE53914B1 (en) | 1981-10-28 | 1982-10-26 | Semiconductor device and method of manufacturing the same |
EP82201335A EP0078571B1 (fr) | 1981-10-28 | 1982-10-26 | Dispositif semi-conducteur et son procédé de fabrication |
DE8282201335T DE3264580D1 (en) | 1981-10-28 | 1982-10-26 | Semiconductor device and method of manufacturing the same |
US06/883,008 US4724221A (en) | 1981-10-28 | 1986-07-07 | High-speed, low-power-dissipation integrated circuits |
JP3240286A JPH04363046A (ja) | 1981-10-28 | 1991-08-28 | 半導体装置の製造方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL8104862A NL8104862A (nl) | 1981-10-28 | 1981-10-28 | Halfgeleiderinrichting, en werkwijze ter vervaardiging daarvan. |
NL8104862 | 1981-10-28 |
Publications (1)
Publication Number | Publication Date |
---|---|
NL8104862A true NL8104862A (nl) | 1983-05-16 |
Family
ID=19838270
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL8104862A NL8104862A (nl) | 1981-10-28 | 1981-10-28 | Halfgeleiderinrichting, en werkwijze ter vervaardiging daarvan. |
Country Status (8)
Country | Link |
---|---|
US (1) | US4724221A (fr) |
EP (1) | EP0078571B1 (fr) |
JP (2) | JPS5880851A (fr) |
AU (1) | AU550102B2 (fr) |
CA (1) | CA1203639A (fr) |
DE (1) | DE3264580D1 (fr) |
IE (1) | IE53914B1 (fr) |
NL (1) | NL8104862A (fr) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5994861A (ja) * | 1982-11-24 | 1984-05-31 | Hitachi Ltd | 半導体集積回路装置及びその製造方法 |
NL188923C (nl) * | 1983-07-05 | 1992-11-02 | Philips Nv | Werkwijze ter vervaardiging van een halfgeleiderinrichting. |
IT1214808B (it) * | 1984-12-20 | 1990-01-18 | Ates Componenti Elettron | Tico e semiconduttore processo per la formazione di uno strato sepolto e di una regione di collettore in un dispositivo monoli |
EP0204979B1 (fr) * | 1985-06-03 | 1989-03-29 | Siemens Aktiengesellschaft | Procédé de fabrication simultanée des transistors de type MOS complémentaires et bipolaires sur le même substrat en silicium |
US5324982A (en) * | 1985-09-25 | 1994-06-28 | Hitachi, Ltd. | Semiconductor memory device having bipolar transistor and structure to avoid soft error |
US5023193A (en) * | 1986-07-16 | 1991-06-11 | National Semiconductor Corp. | Method for simultaneously fabricating bipolar and complementary field effect transistors using a minimal number of masks |
KR880005690A (ko) * | 1986-10-06 | 1988-06-30 | 넬손 스톤 | 선택적인 에피켁샬층을 사용한 BiCMOS 제조방법 |
JPS63122161A (ja) * | 1986-11-12 | 1988-05-26 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
US5475335A (en) * | 1994-04-01 | 1995-12-12 | National Semiconductor Corporation | High voltage cascaded charge pump |
US5556796A (en) * | 1995-04-25 | 1996-09-17 | Micrel, Inc. | Self-alignment technique for forming junction isolation and wells |
JPH11501462A (ja) * | 1995-12-21 | 1999-02-02 | フィリップス エレクトロニクス ネムローゼ フェンノートシャップ | 表面電界減少型(resurf型)高電圧半導体装置の製造方法及びその製造方法によって製造される半導体装置 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1098826A (en) * | 1965-08-24 | 1968-01-10 | Sony Corp | Method of making integrated circuit |
US3930909A (en) * | 1966-10-21 | 1976-01-06 | U.S. Philips Corporation | Method of manufacturing a semiconductor device utilizing simultaneous outdiffusion during epitaxial growth |
NL145396B (nl) * | 1966-10-21 | 1975-03-17 | Philips Nv | Werkwijze ter vervaardiging van een geintegreerde halfgeleiderinrichting en geintegreerde halfgeleiderinrichting, vervaardigd volgens de werkwijze. |
CH519271A (de) * | 1970-07-20 | 1972-02-15 | Bbc Brown Boveri & Cie | Impulsübertrager für einen gesteuerten Gleichrichter |
US4032372A (en) * | 1971-04-28 | 1977-06-28 | International Business Machines Corporation | Epitaxial outdiffusion technique for integrated bipolar and field effect transistors |
US3793088A (en) * | 1972-11-15 | 1974-02-19 | Bell Telephone Labor Inc | Compatible pnp and npn devices in an integrated circuit |
DE2351985A1 (de) * | 1973-10-17 | 1975-04-30 | Itt Ind Gmbh Deutsche | Planardiffusionsverfahren zum herstellen einer monolithisch integrierten festkoerperschaltung |
US4151019A (en) * | 1974-12-27 | 1979-04-24 | Tokyo Shibaura Electric Co., Ltd. | Method of manufacturing integrated injection logic semiconductor devices utilizing self-aligned double-diffusion techniques |
JPS5216185A (en) * | 1975-07-30 | 1977-02-07 | Hitachi Ltd | Bipolar type semiconductor integrated circuit device |
JPS5365675A (en) * | 1976-11-24 | 1978-06-12 | Nec Corp | Semiconductor device |
SU773793A1 (ru) * | 1977-11-02 | 1980-10-23 | Предприятие П/Я -6429 | Способ изготовлени полупроводниковых интегральных бипол рных схем |
JPS5515367A (en) * | 1978-07-19 | 1980-02-02 | Tadano Tekkosho:Kk | Wrecking method |
DE2838928A1 (de) * | 1978-09-07 | 1980-03-20 | Ibm Deutschland | Verfahren zum dotieren von siliciumkoerpern mit bor |
US4168997A (en) * | 1978-10-10 | 1979-09-25 | National Semiconductor Corporation | Method for making integrated circuit transistors with isolation and substrate connected collectors utilizing simultaneous outdiffusion to convert an epitaxial layer |
JPS5552266A (en) * | 1978-10-11 | 1980-04-16 | Seiko Epson Corp | Semiconductor integrated circuit |
US4325180A (en) * | 1979-02-15 | 1982-04-20 | Texas Instruments Incorporated | Process for monolithic integration of logic, control, and high voltage interface circuitry |
JPS55148465A (en) * | 1979-05-09 | 1980-11-19 | Nec Corp | Manufacture of complementary mos integrated circuit device |
JPS55153365A (en) * | 1979-05-17 | 1980-11-29 | Toshiba Corp | Manufacturing method of semiconductor device |
JPS55156366A (en) * | 1979-05-24 | 1980-12-05 | Toshiba Corp | Semiconductor device |
JPS5676560A (en) * | 1979-11-28 | 1981-06-24 | Hitachi Ltd | Semiconductor device |
JPS5694670A (en) * | 1979-12-27 | 1981-07-31 | Fujitsu Ltd | Complementary type mis semiconductor device |
NL186662C (nl) * | 1980-04-29 | 1992-03-16 | Philips Nv | Werkwijze ter vervaardiging van een halfgeleiderinrichting. |
JPS5775453A (en) * | 1980-10-29 | 1982-05-12 | Fujitsu Ltd | Semiconductor device and manufacture thereof |
-
1981
- 1981-10-28 NL NL8104862A patent/NL8104862A/nl not_active Application Discontinuation
-
1982
- 1982-10-19 CA CA000413778A patent/CA1203639A/fr not_active Expired
- 1982-10-25 JP JP57186217A patent/JPS5880851A/ja active Pending
- 1982-10-25 AU AU89763/82A patent/AU550102B2/en not_active Ceased
- 1982-10-26 DE DE8282201335T patent/DE3264580D1/de not_active Expired
- 1982-10-26 IE IE2570/82A patent/IE53914B1/en not_active IP Right Cessation
- 1982-10-26 EP EP82201335A patent/EP0078571B1/fr not_active Expired
-
1986
- 1986-07-07 US US06/883,008 patent/US4724221A/en not_active Expired - Fee Related
-
1991
- 1991-08-28 JP JP3240286A patent/JPH04363046A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
JPS5880851A (ja) | 1983-05-16 |
AU8976382A (en) | 1983-05-05 |
EP0078571B1 (fr) | 1985-07-03 |
IE822570L (en) | 1983-04-28 |
IE53914B1 (en) | 1989-04-12 |
EP0078571A1 (fr) | 1983-05-11 |
US4724221A (en) | 1988-02-09 |
CA1203639A (fr) | 1986-04-22 |
AU550102B2 (en) | 1986-03-06 |
DE3264580D1 (en) | 1985-08-08 |
JPH04363046A (ja) | 1992-12-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0110313B1 (fr) | Dispositif de circuit intégré semi-conducteur et procédé de fabrication | |
US5140388A (en) | Vertical metal-oxide semiconductor devices | |
TWI424527B (zh) | 包含延伸穿過埋藏絕緣層的導電結構之電子裝置 | |
US4089021A (en) | Semiconductor device capable of withstanding high voltage and method of manufacturing same | |
EP0083816B1 (fr) | Dispositif semi-conducteur comprenant une configuration d'interconnexion | |
US4864377A (en) | Silicon on insulator (SOI) semiconductor device | |
GB2103877A (en) | Gate protection for insulated gate semiconductor devices | |
US20020008299A1 (en) | Integrated device with a trench isolation structure, and fabrication process therefor | |
NL8003612A (nl) | Werkwijze ter vervaardiging van een halfgeleider- inrichting en halfgeleiderinrichting vervaardigd door toepassing van deze werkwijze. | |
NL8104862A (nl) | Halfgeleiderinrichting, en werkwijze ter vervaardiging daarvan. | |
US6803249B2 (en) | Method of making an integrated photodetector in which a silicon nitride layer forms an anti-reflective film and part of multi-layer insulator within transistor structures | |
US3602781A (en) | Integrated semiconductor circuit comprising only low temperature processed elements | |
US11114572B2 (en) | Semiconductor device and method for manufacturing semiconductor device | |
EP0112489A1 (fr) | Dispositif semi-conducteur à isolation occupant peu d'espace et son procédé de fabrication | |
EP0413256B1 (fr) | Méthode de fabrication d'une structure semiconductrice pour des circuits intégrés à haute puissance | |
NL7900280A (nl) | Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan. | |
NL8302383A (nl) | Werkwijze ter vervaardiging van een halfgeleiderinrichting, en halfgeleiderinrichting vervaardigd volgens de werkwijze. | |
EP0343879B1 (fr) | Transistor bipolaire et sa méthode de fabrication | |
US5424575A (en) | Semiconductor device for SOI structure having lead conductor suitable for fine patterning | |
KR19990083134A (ko) | 반도체 장치 및 그 제조방법 | |
KR900007904B1 (ko) | 상보형 반도체장치의 제조방법 | |
EP0242893A1 (fr) | Procédé pour la fabrication d'un dispositif semi-conducteur | |
JPS6195565A (ja) | エミツタ直列抵抗を有するバイポーラトランジスタの製造方法 | |
JPH05343415A (ja) | バイポーラトランジスタ | |
EP1061572A1 (fr) | Structure intégrée pour les applications de la radiofréquence |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A1B | A search report has been drawn up | ||
A85 | Still pending on 85-01-01 | ||
BV | The patent application has lapsed |