DE3264580D1 - Semiconductor device and method of manufacturing the same - Google Patents
Semiconductor device and method of manufacturing the sameInfo
- Publication number
- DE3264580D1 DE3264580D1 DE8282201335T DE3264580T DE3264580D1 DE 3264580 D1 DE3264580 D1 DE 3264580D1 DE 8282201335 T DE8282201335 T DE 8282201335T DE 3264580 T DE3264580 T DE 3264580T DE 3264580 D1 DE3264580 D1 DE 3264580D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- same
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0635—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors and diodes, or resistors, or capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL8104862A NL8104862A (nl) | 1981-10-28 | 1981-10-28 | Halfgeleiderinrichting, en werkwijze ter vervaardiging daarvan. |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3264580D1 true DE3264580D1 (en) | 1985-08-08 |
Family
ID=19838270
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8282201335T Expired DE3264580D1 (en) | 1981-10-28 | 1982-10-26 | Semiconductor device and method of manufacturing the same |
Country Status (8)
Country | Link |
---|---|
US (1) | US4724221A (de) |
EP (1) | EP0078571B1 (de) |
JP (2) | JPS5880851A (de) |
AU (1) | AU550102B2 (de) |
CA (1) | CA1203639A (de) |
DE (1) | DE3264580D1 (de) |
IE (1) | IE53914B1 (de) |
NL (1) | NL8104862A (de) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5994861A (ja) * | 1982-11-24 | 1984-05-31 | Hitachi Ltd | 半導体集積回路装置及びその製造方法 |
NL188923C (nl) * | 1983-07-05 | 1992-11-02 | Philips Nv | Werkwijze ter vervaardiging van een halfgeleiderinrichting. |
IT1214808B (it) * | 1984-12-20 | 1990-01-18 | Ates Componenti Elettron | Tico e semiconduttore processo per la formazione di uno strato sepolto e di una regione di collettore in un dispositivo monoli |
ATE41836T1 (de) * | 1985-06-03 | 1989-04-15 | Siemens Ag | Verfahren zum gleichzeitigen herstellen von bipolaren und komplementaeren mos-transistoren auf einem gemeinsamen siliziumsubstrat. |
US5324982A (en) * | 1985-09-25 | 1994-06-28 | Hitachi, Ltd. | Semiconductor memory device having bipolar transistor and structure to avoid soft error |
US5023193A (en) * | 1986-07-16 | 1991-06-11 | National Semiconductor Corp. | Method for simultaneously fabricating bipolar and complementary field effect transistors using a minimal number of masks |
KR880005690A (ko) * | 1986-10-06 | 1988-06-30 | 넬손 스톤 | 선택적인 에피켁샬층을 사용한 BiCMOS 제조방법 |
JPS63122161A (ja) * | 1986-11-12 | 1988-05-26 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
US5475335A (en) * | 1994-04-01 | 1995-12-12 | National Semiconductor Corporation | High voltage cascaded charge pump |
US5556796A (en) * | 1995-04-25 | 1996-09-17 | Micrel, Inc. | Self-alignment technique for forming junction isolation and wells |
WO1997023901A1 (en) * | 1995-12-21 | 1997-07-03 | Philips Electronics N.V. | Method of manufacturing a resurf semiconductor device, and a semiconductor device manufactured by such a method |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1098826A (en) * | 1965-08-24 | 1968-01-10 | Sony Corp | Method of making integrated circuit |
NL145396B (nl) * | 1966-10-21 | 1975-03-17 | Philips Nv | Werkwijze ter vervaardiging van een geintegreerde halfgeleiderinrichting en geintegreerde halfgeleiderinrichting, vervaardigd volgens de werkwijze. |
US3930909A (en) * | 1966-10-21 | 1976-01-06 | U.S. Philips Corporation | Method of manufacturing a semiconductor device utilizing simultaneous outdiffusion during epitaxial growth |
CH519271A (de) * | 1970-07-20 | 1972-02-15 | Bbc Brown Boveri & Cie | Impulsübertrager für einen gesteuerten Gleichrichter |
US4032372A (en) * | 1971-04-28 | 1977-06-28 | International Business Machines Corporation | Epitaxial outdiffusion technique for integrated bipolar and field effect transistors |
US3793088A (en) * | 1972-11-15 | 1974-02-19 | Bell Telephone Labor Inc | Compatible pnp and npn devices in an integrated circuit |
DE2351985A1 (de) * | 1973-10-17 | 1975-04-30 | Itt Ind Gmbh Deutsche | Planardiffusionsverfahren zum herstellen einer monolithisch integrierten festkoerperschaltung |
US4151019A (en) * | 1974-12-27 | 1979-04-24 | Tokyo Shibaura Electric Co., Ltd. | Method of manufacturing integrated injection logic semiconductor devices utilizing self-aligned double-diffusion techniques |
JPS5216185A (en) * | 1975-07-30 | 1977-02-07 | Hitachi Ltd | Bipolar type semiconductor integrated circuit device |
JPS5365675A (en) * | 1976-11-24 | 1978-06-12 | Nec Corp | Semiconductor device |
SU773793A1 (ru) * | 1977-11-02 | 1980-10-23 | Предприятие П/Я -6429 | Способ изготовлени полупроводниковых интегральных бипол рных схем |
JPS5515367A (en) * | 1978-07-19 | 1980-02-02 | Tadano Tekkosho:Kk | Wrecking method |
DE2838928A1 (de) * | 1978-09-07 | 1980-03-20 | Ibm Deutschland | Verfahren zum dotieren von siliciumkoerpern mit bor |
US4168997A (en) * | 1978-10-10 | 1979-09-25 | National Semiconductor Corporation | Method for making integrated circuit transistors with isolation and substrate connected collectors utilizing simultaneous outdiffusion to convert an epitaxial layer |
JPS5552266A (en) * | 1978-10-11 | 1980-04-16 | Seiko Epson Corp | Semiconductor integrated circuit |
US4325180A (en) * | 1979-02-15 | 1982-04-20 | Texas Instruments Incorporated | Process for monolithic integration of logic, control, and high voltage interface circuitry |
JPS55148465A (en) * | 1979-05-09 | 1980-11-19 | Nec Corp | Manufacture of complementary mos integrated circuit device |
JPS55153365A (en) * | 1979-05-17 | 1980-11-29 | Toshiba Corp | Manufacturing method of semiconductor device |
JPS55156366A (en) * | 1979-05-24 | 1980-12-05 | Toshiba Corp | Semiconductor device |
JPS5676560A (en) * | 1979-11-28 | 1981-06-24 | Hitachi Ltd | Semiconductor device |
JPS5694670A (en) * | 1979-12-27 | 1981-07-31 | Fujitsu Ltd | Complementary type mis semiconductor device |
NL186662C (nl) * | 1980-04-29 | 1992-03-16 | Philips Nv | Werkwijze ter vervaardiging van een halfgeleiderinrichting. |
JPS5775453A (en) * | 1980-10-29 | 1982-05-12 | Fujitsu Ltd | Semiconductor device and manufacture thereof |
-
1981
- 1981-10-28 NL NL8104862A patent/NL8104862A/nl not_active Application Discontinuation
-
1982
- 1982-10-19 CA CA000413778A patent/CA1203639A/en not_active Expired
- 1982-10-25 JP JP57186217A patent/JPS5880851A/ja active Pending
- 1982-10-25 AU AU89763/82A patent/AU550102B2/en not_active Ceased
- 1982-10-26 IE IE2570/82A patent/IE53914B1/en not_active IP Right Cessation
- 1982-10-26 DE DE8282201335T patent/DE3264580D1/de not_active Expired
- 1982-10-26 EP EP82201335A patent/EP0078571B1/de not_active Expired
-
1986
- 1986-07-07 US US06/883,008 patent/US4724221A/en not_active Expired - Fee Related
-
1991
- 1991-08-28 JP JP3240286A patent/JPH04363046A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
JPH04363046A (ja) | 1992-12-15 |
EP0078571B1 (de) | 1985-07-03 |
IE53914B1 (en) | 1989-04-12 |
JPS5880851A (ja) | 1983-05-16 |
IE822570L (en) | 1983-04-28 |
EP0078571A1 (de) | 1983-05-11 |
AU8976382A (en) | 1983-05-05 |
US4724221A (en) | 1988-02-09 |
NL8104862A (nl) | 1983-05-16 |
AU550102B2 (en) | 1986-03-06 |
CA1203639A (en) | 1986-04-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |