NL7901180A - Charge transfer semiconductor device - has depletion regions of different depth beneath adjacent electrodes - Google Patents

Charge transfer semiconductor device - has depletion regions of different depth beneath adjacent electrodes

Info

Publication number
NL7901180A
NL7901180A NL7901180A NL7901180A NL7901180A NL 7901180 A NL7901180 A NL 7901180A NL 7901180 A NL7901180 A NL 7901180A NL 7901180 A NL7901180 A NL 7901180A NL 7901180 A NL7901180 A NL 7901180A
Authority
NL
Netherlands
Prior art keywords
semiconductor device
charge transfer
depletion regions
majority carriers
different depth
Prior art date
Application number
NL7901180A
Other languages
Dutch (nl)
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP3265572A external-priority patent/JPS48101889A/ja
Priority claimed from JP47074865A external-priority patent/JPS5850032B2/en
Priority claimed from JP664573A external-priority patent/JPS4996681A/ja
Priority claimed from JP952173A external-priority patent/JPS5637706B2/ja
Priority claimed from JP1296673A external-priority patent/JPS49103578A/ja
Priority claimed from JP1296773A external-priority patent/JPS538475B2/ja
Priority claimed from JP2611373A external-priority patent/JPS49115678A/ja
Priority claimed from NL7304634.A external-priority patent/NL165886C/en
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of NL7901180A publication Critical patent/NL7901180A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833—Buried channel CCD
    • H01L29/76841—Two-Phase CCD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1062—Channel region of field-effect devices of charge coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833—Buried channel CCD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833—Buried channel CCD
    • H01L29/7685—Three-Phase CCD

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

The charge transfer semiconductor device has majority carriers transferred from means for introducing majority carriers o means for detecting transferred majority carriers by applying pulsed voltages to a series of electrodes disposed on an insulating layer, on one surface of the semiconductor body between the introducing means and the detecting means. Depletion regions are formed within the semiconductor body, so that one end of a depletion region below one electrode reaches the substrate and another end of a depletion region below the next electrode does not reach the substrate, so majority carriers below the first electrode are pushed out below the next electrode.
NL7901180A 1972-04-03 1979-02-14 Charge transfer semiconductor device - has depletion regions of different depth beneath adjacent electrodes NL7901180A (en)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP3265572A JPS48101889A (en) 1972-04-03 1972-04-03
JP47074865A JPS5850032B2 (en) 1972-07-26 1972-07-26 Hand tie souchi
JP664573A JPS4996681A (en) 1973-01-16 1973-01-16
JP952173A JPS5637706B2 (en) 1973-01-24 1973-01-24
JP1296673A JPS49103578A (en) 1973-02-02 1973-02-02
JP1296773A JPS538475B2 (en) 1973-02-02 1973-02-02
JP2611373A JPS49115678A (en) 1973-03-07 1973-03-07
NL7304634.A NL165886C (en) 1972-04-03 1973-04-03 SEMICONDUCTOR DEVICE OF THE LOAD-CONNECTED TYPE FOR STORING AND IN COMPLIANT TRANSFER OF PACKAGES OF MAJORITY CARRIERS.

Publications (1)

Publication Number Publication Date
NL7901180A true NL7901180A (en) 1979-06-29

Family

ID=27571585

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7901180A NL7901180A (en) 1972-04-03 1979-02-14 Charge transfer semiconductor device - has depletion regions of different depth beneath adjacent electrodes

Country Status (1)

Country Link
NL (1) NL7901180A (en)

Similar Documents

Publication Publication Date Title
GB1377128A (en) Charge coupled circuits
ES388720A1 (en) Monolithic semiconductor apparatus adapted for sequential charge transfer
GB1340618A (en) Charge transfer apparatus
GB1369606A (en) Charge-coupled semiconductor device
NL179434C (en) METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE CONTAINING A SEMICONDUCTOR BODY WITH A CONDUCTIVE STEERING ELECTRODE SEPARATED BY A THIN INSULATING LAYER OF THE SEMICONDUCTOR BODY.
FR2194047B1 (en)
GB1444823A (en) Semiconductor devices
NL7901180A (en) Charge transfer semiconductor device - has depletion regions of different depth beneath adjacent electrodes
JPS51150284A (en) Semiconductor unvolatile memory unit
JPS5228277A (en) Non-voltatile semiconductor memory device
JPS5265683A (en) Production of insulated gate type mis semiconductor device
GB1408892A (en) Semiconductor devices for information storage and transfer
JPS5232693A (en) Semiconductor device
GB1376640A (en) Charge coupled devices
JPS6454762A (en) Insulated gate field effect transistor
JPS5387188A (en) Semiconductor device
FR2172200B1 (en)
JPS5367388A (en) Memory semiconductor device
JPS5463691A (en) Charge coupled device
FR2293062A1 (en) Charge transfer device with semiconductor substrate - has a number of spaced local charge storage zones on one of its surfaces
JPS5279840A (en) Operation of nonvolatile semiconductor memory element
NL165331B (en) METHOD FOR MANUFACTURING A FIELD-EFFECT TRANSISTOR WITH AN INSULATED CONTROL ELECTRODE
JPS52129383A (en) Mis semicnductor integrated circuit device
GB1200327A (en) Semiconductor device
JPS5427777A (en) Insulated gate type semiconductor device

Legal Events

Date Code Title Description
A1A A request for search or an international-type search has been filed
BB A search report has been drawn up
BC A request for examination has been filed
A85 Still pending on 85-01-01
BV The patent application has lapsed