GB1376640A - Charge coupled devices - Google Patents

Charge coupled devices

Info

Publication number
GB1376640A
GB1376640A GB3004672A GB3004672A GB1376640A GB 1376640 A GB1376640 A GB 1376640A GB 3004672 A GB3004672 A GB 3004672A GB 3004672 A GB3004672 A GB 3004672A GB 1376640 A GB1376640 A GB 1376640A
Authority
GB
United Kingdom
Prior art keywords
wells
electrodes
charge
beneath
insulating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3004672A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB1376640A publication Critical patent/GB1376640A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833—Buried channel CCD
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1062—Channel region of field-effect devices of charge coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833—Buried channel CCD
    • H01L29/76841—Two-Phase CCD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866—Surface Channel CCD

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Semiconductor Memories (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

1376640 Semi-conductor devices WESTERN ELECTRIC CO Inc 27 June 1972 [28 June 1971 (2)] 30046/72 Heading H1K A charge coupled device comprises an electrode arrangement, on an insulating layer, over a charge carrier storage medium, fixed charges being distributed beneath the electrode arrangement to form an asymmetric well during operation. The fixed charge may reside in the medium, the insulating layer or both, and may be produced by diffusion or ion implantation. In one embodiment, Figs. 1, 2 (not shown), a two-phase system has chargers fixed in the medium and distributed non-uniformly so as to form potential barriers to charge carriers in the "upstream" direction. In a second embodiment, Fig. 6, the fixed charges reside, non-uniformly, in the insulating layer, again forming potential barriers in the "upstream" direction. The use of two value clock pulses enables a single row of electrodes to be used, the first pulse to all electrodes being of a low value to form shallow potential wells beneath the electrodes enabling carriers to transfer to deeper wells beneath the interelectrode spaces, the second pulse being of a greater value to form deep wells beneath the electrodes and receive carriers, in one direction only, from the shallower inter-electrode wells. In a further embodiment, the electrodes may be mounted on insulating material of irregular thickness to assist in the formation of suitably asymmetric wells. In Fig. 12 (not shown), a single electrode extends over insulating material of irregular thickness, the material containing a non-uniform distribution of fixed charge, a two-value clock pulse enabling charge transfer by means of wells of different depths beneath different parts of the electrode. The medium may be of silicon, the insulating layer of silicon dioxide.
GB3004672A 1971-06-28 1972-06-27 Charge coupled devices Expired GB1376640A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15750771A 1971-06-28 1971-06-28
US15750971A 1971-06-28 1971-06-28

Publications (1)

Publication Number Publication Date
GB1376640A true GB1376640A (en) 1974-12-11

Family

ID=26854197

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3004672A Expired GB1376640A (en) 1971-06-28 1972-06-27 Charge coupled devices

Country Status (8)

Country Link
JP (1) JPS5147586B1 (en)
BE (1) BE785468A (en)
DE (1) DE2231616C3 (en)
FR (1) FR2143837B1 (en)
GB (1) GB1376640A (en)
IT (1) IT958489B (en)
NL (1) NL163675C (en)
SE (2) SE387186B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3852799A (en) * 1973-04-27 1974-12-03 Bell Telephone Labor Inc Buried channel charge coupled apparatus
FR2259438B1 (en) * 1974-01-24 1976-10-08 Commissariat Energie Atomique
FR2294546A1 (en) * 1974-12-13 1976-07-09 Thomson Csf SINGLE-PHASE LOAD TRANSFER DEVICE

Also Published As

Publication number Publication date
FR2143837A1 (en) 1973-02-09
NL163675C (en) 1980-09-15
IT958489B (en) 1973-10-20
SE409773B (en) 1979-09-03
DE2231616A1 (en) 1973-01-11
NL163675B (en) 1980-04-15
BE785468A (en) 1972-10-16
DE2231616B2 (en) 1981-02-05
SE7509111L (en) 1975-08-14
SE387186B (en) 1976-08-30
DE2231616C3 (en) 1981-10-01
NL7208841A (en) 1973-01-02
FR2143837B1 (en) 1974-12-27
JPS5147586B1 (en) 1976-12-15

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee