SE7509111L - CHARGING COUPLED SEMICONDUCTOR - Google Patents

CHARGING COUPLED SEMICONDUCTOR

Info

Publication number
SE7509111L
SE7509111L SE7509111A SE7509111A SE7509111L SE 7509111 L SE7509111 L SE 7509111L SE 7509111 A SE7509111 A SE 7509111A SE 7509111 A SE7509111 A SE 7509111A SE 7509111 L SE7509111 L SE 7509111L
Authority
SE
Sweden
Prior art keywords
coupled semiconductor
charging coupled
charging
semiconductor
coupled
Prior art date
Application number
SE7509111A
Other languages
Swedish (sv)
Other versions
SE409773B (en
Inventor
G F Amelio
R H Krambeck
K A Pickar
R H Walden
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of SE7509111L publication Critical patent/SE7509111L/en
Publication of SE409773B publication Critical patent/SE409773B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833—Buried channel CCD
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1062—Channel region of field-effect devices of charge coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833—Buried channel CCD
    • H01L29/76841—Two-Phase CCD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866—Surface Channel CCD

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Semiconductor Memories (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
SE7509111A 1971-06-28 1975-08-14 CHARGING COUPLED DEVICE SE409773B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15750771A 1971-06-28 1971-06-28
US15750971A 1971-06-28 1971-06-28

Publications (2)

Publication Number Publication Date
SE7509111L true SE7509111L (en) 1975-08-14
SE409773B SE409773B (en) 1979-09-03

Family

ID=26854197

Family Applications (2)

Application Number Title Priority Date Filing Date
SE7208053A SE387186B (en) 1971-06-28 1972-06-19 CHARGING COUPLED SEMICONDUCTOR DEVICE WITH DIFFERENT CHARGING CONCENTRATION ALONG THE INFORMATION CHANNEL
SE7509111A SE409773B (en) 1971-06-28 1975-08-14 CHARGING COUPLED DEVICE

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SE7208053A SE387186B (en) 1971-06-28 1972-06-19 CHARGING COUPLED SEMICONDUCTOR DEVICE WITH DIFFERENT CHARGING CONCENTRATION ALONG THE INFORMATION CHANNEL

Country Status (8)

Country Link
JP (1) JPS5147586B1 (en)
BE (1) BE785468A (en)
DE (1) DE2231616C3 (en)
FR (1) FR2143837B1 (en)
GB (1) GB1376640A (en)
IT (1) IT958489B (en)
NL (1) NL163675C (en)
SE (2) SE387186B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3852799A (en) * 1973-04-27 1974-12-03 Bell Telephone Labor Inc Buried channel charge coupled apparatus
FR2259438B1 (en) * 1974-01-24 1976-10-08 Commissariat Energie Atomique
FR2294546A1 (en) * 1974-12-13 1976-07-09 Thomson Csf SINGLE-PHASE LOAD TRANSFER DEVICE

Also Published As

Publication number Publication date
IT958489B (en) 1973-10-20
NL163675C (en) 1980-09-15
DE2231616B2 (en) 1981-02-05
NL7208841A (en) 1973-01-02
SE387186B (en) 1976-08-30
DE2231616C3 (en) 1981-10-01
BE785468A (en) 1972-10-16
FR2143837B1 (en) 1974-12-27
DE2231616A1 (en) 1973-01-11
NL163675B (en) 1980-04-15
SE409773B (en) 1979-09-03
GB1376640A (en) 1974-12-11
FR2143837A1 (en) 1973-02-09
JPS5147586B1 (en) 1976-12-15

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