FR2293062A1 - Charge transfer device with semiconductor substrate - has a number of spaced local charge storage zones on one of its surfaces - Google Patents

Charge transfer device with semiconductor substrate - has a number of spaced local charge storage zones on one of its surfaces

Info

Publication number
FR2293062A1
FR2293062A1 FR7536218A FR7536218A FR2293062A1 FR 2293062 A1 FR2293062 A1 FR 2293062A1 FR 7536218 A FR7536218 A FR 7536218A FR 7536218 A FR7536218 A FR 7536218A FR 2293062 A1 FR2293062 A1 FR 2293062A1
Authority
FR
France
Prior art keywords
charge storage
zones
storage zones
charge
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7536218A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of FR2293062A1 publication Critical patent/FR2293062A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866—Surface Channel CCD
    • H01L29/76875—Two-Phase CCD
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/1055—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components comprising charge coupled devices of the so-called bucket brigade type

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Non-Volatile Memory (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

A dielectric layer covers the substrate main surface and the charge storage zones. It has further a number of local junction electrodes on the dielectric layer above the respective charge storage zones, so that an electrode bridges the space between two charge storage zones and covers a part of one of the above zones. Two timing voltages are alternately and consecutively applied to the electrodes in order to cause a signal charge transfer from one to the next charge storage zone. The charge zones (11a, 11b...) are doped so that at the end of a transfer process signal charges are completely removed from the charge storage zones.
FR7536218A 1974-11-26 1975-11-26 Charge transfer device with semiconductor substrate - has a number of spaced local charge storage zones on one of its surfaces Withdrawn FR2293062A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13654974A JPS5161271A (en) 1974-11-26 1974-11-26 DENKATENSOSOSHI

Publications (1)

Publication Number Publication Date
FR2293062A1 true FR2293062A1 (en) 1976-06-25

Family

ID=15177798

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7536218A Withdrawn FR2293062A1 (en) 1974-11-26 1975-11-26 Charge transfer device with semiconductor substrate - has a number of spaced local charge storage zones on one of its surfaces

Country Status (3)

Country Link
JP (1) JPS5161271A (en)
DE (1) DE2553071A1 (en)
FR (1) FR2293062A1 (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4940485A (en) * 1972-08-18 1974-04-16

Also Published As

Publication number Publication date
DE2553071A1 (en) 1976-08-12
JPS5161271A (en) 1976-05-27

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Legal Events

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ST Notification of lapse