NL7506594A - Werkwijze voor het vervaardigen van een halfge- leiderinrichting en halfgeleiderinrichting ver- vaardigd met behulp van de werkwijze. - Google Patents

Werkwijze voor het vervaardigen van een halfge- leiderinrichting en halfgeleiderinrichting ver- vaardigd met behulp van de werkwijze.

Info

Publication number
NL7506594A
NL7506594A NL7506594A NL7506594A NL7506594A NL 7506594 A NL7506594 A NL 7506594A NL 7506594 A NL7506594 A NL 7506594A NL 7506594 A NL7506594 A NL 7506594A NL 7506594 A NL7506594 A NL 7506594A
Authority
NL
Netherlands
Prior art keywords
semi
conductor device
procedure
manufacturing
device manufactured
Prior art date
Application number
NL7506594A
Other languages
English (en)
Dutch (nl)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL7506594A priority Critical patent/NL7506594A/xx
Priority to US05/671,419 priority patent/US4113515A/en
Priority to DE2623009A priority patent/DE2623009C2/de
Priority to CA253,508A priority patent/CA1068010A/en
Priority to GB22574/76A priority patent/GB1550645A/en
Priority to AU14489/76A priority patent/AU509006B2/en
Priority to IT23871/76A priority patent/IT1063373B/it
Priority to BR3505/76A priority patent/BR7603505A/pt
Priority to SE7606171A priority patent/SE7606171L/xx
Priority to JP51064028A priority patent/JPS51148362A/ja
Priority to FR7616626A priority patent/FR2313770A1/fr
Priority to ES448459A priority patent/ES448459A1/es
Priority to BE167575A priority patent/BE842511A/xx
Publication of NL7506594A publication Critical patent/NL7506594A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
    • H01L21/02329—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen
    • H01L21/02332—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen into an oxide layer, e.g. changing SiO to SiON
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28185—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the gate insulator and before the formation of the definitive gate conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28202—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/3143—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers
    • H01L21/3144—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers on silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823406—Combination of charge coupled devices, i.e. CCD, or BBD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/0883—Combination of depletion and enhancement field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
    • H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/112—Nitridation, direct, of silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/114—Nitrides of silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/117—Oxidation, selective
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/141—Self-alignment coat gate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Formation Of Insulating Films (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
NL7506594A 1975-06-04 1975-06-04 Werkwijze voor het vervaardigen van een halfge- leiderinrichting en halfgeleiderinrichting ver- vaardigd met behulp van de werkwijze. NL7506594A (nl)

Priority Applications (13)

Application Number Priority Date Filing Date Title
NL7506594A NL7506594A (nl) 1975-06-04 1975-06-04 Werkwijze voor het vervaardigen van een halfge- leiderinrichting en halfgeleiderinrichting ver- vaardigd met behulp van de werkwijze.
US05/671,419 US4113515A (en) 1975-06-04 1976-03-29 Semiconductor manufacturing method using buried nitride formed by a nitridation treatment in the presence of active nitrogen
DE2623009A DE2623009C2 (de) 1975-06-04 1976-05-22 Verfahren zum Herstellen einer Halbleiteranordnung
CA253,508A CA1068010A (en) 1975-06-04 1976-05-27 Semiconductor devices using genetically grown films of silicon nitride
GB22574/76A GB1550645A (en) 1975-06-04 1976-06-01 Methods of manufacturing semiconductor devices
AU14489/76A AU509006B2 (en) 1975-06-04 1976-06-01 Method of forming a silicon nitride zone in semiconductor
IT23871/76A IT1063373B (it) 1975-06-04 1976-06-01 Metodo di fabbricazione di un dispositivo semiconduttore e dispositivo semiconduttore fabbricato con l ausilio di tale metodo
BR3505/76A BR7603505A (pt) 1975-06-04 1976-06-01 Processo de fabricacao de um dispositivo semicondutor e dispositivo semicondutor fabricado por este processo
SE7606171A SE7606171L (sv) 1975-06-04 1976-06-01 Halvledaranordning och sett att framstella densamma
JP51064028A JPS51148362A (en) 1975-06-04 1976-06-01 Semiconductor device and method of making the same
FR7616626A FR2313770A1 (fr) 1975-06-04 1976-06-02 Procede de fabrication d'un dispositif semi-conducteur, par nitridation, et dispositifs ainsi obtenus
ES448459A ES448459A1 (es) 1975-06-04 1976-06-02 Un metodo para fabricar un dispositivo semico inductor.
BE167575A BE842511A (fr) 1975-06-04 1976-06-02 Dispositif semi-conducteur et son procede de fabrication

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7506594A NL7506594A (nl) 1975-06-04 1975-06-04 Werkwijze voor het vervaardigen van een halfge- leiderinrichting en halfgeleiderinrichting ver- vaardigd met behulp van de werkwijze.

Publications (1)

Publication Number Publication Date
NL7506594A true NL7506594A (nl) 1976-12-07

Family

ID=19823876

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7506594A NL7506594A (nl) 1975-06-04 1975-06-04 Werkwijze voor het vervaardigen van een halfge- leiderinrichting en halfgeleiderinrichting ver- vaardigd met behulp van de werkwijze.

Country Status (13)

Country Link
US (1) US4113515A (de)
JP (1) JPS51148362A (de)
AU (1) AU509006B2 (de)
BE (1) BE842511A (de)
BR (1) BR7603505A (de)
CA (1) CA1068010A (de)
DE (1) DE2623009C2 (de)
ES (1) ES448459A1 (de)
FR (1) FR2313770A1 (de)
GB (1) GB1550645A (de)
IT (1) IT1063373B (de)
NL (1) NL7506594A (de)
SE (1) SE7606171L (de)

Families Citing this family (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1089299B (it) * 1977-01-26 1985-06-18 Mostek Corp Procedimento per fabbricare un dispositivo semiconduttore
NL7706802A (nl) * 1977-06-21 1978-12-27 Philips Nv Werkwijze voor het vervaardigen van een half- geleiderinrichting en halfgeleiderinrichting vervaardigd met behulp van de werkwijze.
DE2742951A1 (de) * 1977-09-23 1979-04-05 Siemens Ag Verfahren zum herstellen von mehrlagen-silizium-gate-strukturen auf einer halbleitenden siliziumschicht
EP0154670B1 (de) * 1978-06-14 1991-05-08 Fujitsu Limited Verfahren zur Herstellung einer Halbleiteranordnung mit einer Isolierschicht
EP0072603B1 (de) * 1978-06-14 1986-10-01 Fujitsu Limited Verfahren zur Herstellung einer Halbleiteranordnung mit einer Isolierschicht aus Siliziumdioxid, die mit einer Schicht aus Siliziumoxynitrid bedeckt ist
JPS5534444A (en) * 1978-08-31 1980-03-11 Fujitsu Ltd Preparation of semiconductor device
JPS5845177B2 (ja) * 1979-03-09 1983-10-07 富士通株式会社 半導体表面絶縁膜の形成法
US4266985A (en) * 1979-05-18 1981-05-12 Fujitsu Limited Process for producing a semiconductor device including an ion implantation step in combination with direct thermal nitridation of the silicon substrate
DE2921793A1 (de) * 1979-05-29 1980-12-04 Fujitsu Ltd Verfahren zum herstellen einer halbleitervorrichtung mit ionenimplantation
JPS5621372A (en) * 1979-07-31 1981-02-27 Fujitsu Ltd Manufacture of semiconductor device
JPS5650532A (en) * 1979-10-01 1981-05-07 Hitachi Ltd Manufacture of semiconductor device
JPS5694732A (en) * 1979-12-28 1981-07-31 Fujitsu Ltd Semiconductor substrate
US4465705A (en) * 1980-05-19 1984-08-14 Matsushita Electric Industrial Co., Ltd. Method of making semiconductor devices
AT387474B (de) * 1980-12-23 1989-01-25 Philips Nv Verfahren zur herstellung einer halbleitervorrichtung
NL187328C (nl) * 1980-12-23 1991-08-16 Philips Nv Werkwijze ter vervaardiging van een halfgeleiderinrichting.
JPS581878A (ja) * 1981-06-26 1983-01-07 Fujitsu Ltd 磁気バブルメモリ素子の製造方法
EP0075875A3 (de) * 1981-09-28 1986-07-02 General Electric Company Verfahren zur Herstellung von integrierten Schaltungen mit dielektrischen Isolationszonen
US4600624A (en) * 1983-09-20 1986-07-15 International Business Machines Corporation Composite insulator structure
US4601939A (en) * 1983-09-20 1986-07-22 International Business Machines Corporation Composite insulator structure
US4528211A (en) * 1983-11-04 1985-07-09 General Motors Corporation Silicon nitride formation and use in self-aligned semiconductor device manufacturing method
US4575921A (en) * 1983-11-04 1986-03-18 General Motors Corporation Silicon nitride formation and use in self-aligned semiconductor device manufacturing method
US4762728A (en) * 1985-04-09 1988-08-09 Fairchild Semiconductor Corporation Low temperature plasma nitridation process and applications of nitride films formed thereby
US4824795A (en) * 1985-12-19 1989-04-25 Siliconix Incorporated Method for obtaining regions of dielectrically isolated single crystal silicon
US4774197A (en) * 1986-06-17 1988-09-27 Advanced Micro Devices, Inc. Method of improving silicon dioxide
US4900396A (en) * 1987-08-19 1990-02-13 Agency Of Industrial Science And Technology Method of forming modified layer and pattern
US4960727A (en) * 1987-11-17 1990-10-02 Motorola, Inc. Method for forming a dielectric filled trench
US4825277A (en) * 1987-11-17 1989-04-25 Motorola Inc. Trench isolation process and structure
US5017515A (en) * 1989-10-02 1991-05-21 Texas Instruments Incorporated Process for minimizing lateral distance between elements in an integrated circuit by using sidewall spacers
US5077230A (en) * 1990-08-03 1991-12-31 Intel Corporation Method for improving erase characteristics of buried bit line flash EPROM devices by use of a thin nitride layer formed during field oxide growth
US5254489A (en) * 1990-10-18 1993-10-19 Nec Corporation Method of manufacturing semiconductor device by forming first and second oxide films by use of nitridation
JPH04192566A (ja) * 1990-11-27 1992-07-10 Terumo Corp 半導体装置およびその製造方法
US5369040A (en) * 1992-05-18 1994-11-29 Westinghouse Electric Corporation Method of making transparent polysilicon gate for imaging arrays
US5382533A (en) * 1993-06-18 1995-01-17 Micron Semiconductor, Inc. Method of manufacturing small geometry MOS field-effect transistors having improved barrier layer to hot electron injection
KR970003837B1 (en) * 1993-12-16 1997-03-22 Lg Semicon Co Ltd Fabrication of mosfet
US5455204A (en) * 1994-12-12 1995-10-03 International Business Machines Corporation Thin capacitor dielectric by rapid thermal processing
US6607946B1 (en) * 1996-05-22 2003-08-19 Micron Technology, Inc. Process for growing a dielectric layer on a silicon-containing surface using a mixture of N2O and O3
US6794255B1 (en) * 1997-07-29 2004-09-21 Micron Technology, Inc. Carburized silicon gate insulators for integrated circuits
US6936849B1 (en) 1997-07-29 2005-08-30 Micron Technology, Inc. Silicon carbide gate transistor
US6746893B1 (en) 1997-07-29 2004-06-08 Micron Technology, Inc. Transistor with variable electron affinity gate and methods of fabrication and use
US6965123B1 (en) 1997-07-29 2005-11-15 Micron Technology, Inc. Transistor with variable electron affinity gate and methods of fabrication and use
US6031263A (en) 1997-07-29 2000-02-29 Micron Technology, Inc. DEAPROM and transistor with gallium nitride or gallium aluminum nitride gate
US5886368A (en) 1997-07-29 1999-03-23 Micron Technology, Inc. Transistor with silicon oxycarbide gate and methods of fabrication and use
US7196929B1 (en) 1997-07-29 2007-03-27 Micron Technology Inc Method for operating a memory device having an amorphous silicon carbide gate insulator
US7154153B1 (en) 1997-07-29 2006-12-26 Micron Technology, Inc. Memory device
KR100379136B1 (ko) * 1998-10-02 2003-04-08 인터내셔널 비지네스 머신즈 코포레이션 반도체 소자 형성 방법과 반도체 소자
US6429101B1 (en) 1999-01-29 2002-08-06 International Business Machines Corporation Method of forming thermally stable polycrystal to single crystal electrical contact structure
US6498383B2 (en) 2001-05-23 2002-12-24 International Business Machines Corporation Oxynitride shallow trench isolation and method of formation
US6610586B1 (en) * 2002-09-04 2003-08-26 Macronix International Co., Ltd. Method for fabricating nitride read-only memory
US6861320B1 (en) * 2003-04-04 2005-03-01 Silicon Wafer Technologies, Inc. Method of making starting material for chip fabrication comprising a buried silicon nitride layer
US8679936B1 (en) * 2005-05-26 2014-03-25 National Semiconductor Corporation Manufacturing resistors with tightened resistivity distribution in semiconductor integrated circuits
JP2007326620A (ja) * 2006-06-08 2007-12-20 Rengo Co Ltd 梱包箱
JP6086933B2 (ja) * 2015-01-06 2017-03-01 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1696625C3 (de) * 1966-10-07 1979-03-08 Syumpei, Yamazaki Verfahren zum Erzeugen einer Nitridschutzschicht auf einem Halbleiterkörper
US3622382A (en) * 1969-05-05 1971-11-23 Ibm Semiconductor isolation structure and method of producing
NL169121C (nl) * 1970-07-10 1982-06-01 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting met een halfgeleiderlichaam, dat aan een oppervlak is voorzien van een althans ten dele in het halfgeleiderlichaam verzonken, door thermische oxydatie gevormd oxydepatroon.
DE2063726C3 (de) * 1970-12-24 1979-09-06 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Herstellen eines Halbleiterbauelements
NL173110C (nl) * 1971-03-17 1983-12-01 Philips Nv Werkwijze ter vervaardiging van een halfgeleiderinrichting, waarbij op een oppervlak van een halfgeleiderlichaam een uit ten minste twee deellagen van verschillend materiaal samengestelde maskeringslaag wordt aangebracht.
US3897274A (en) * 1971-06-01 1975-07-29 Texas Instruments Inc Method of fabricating dielectrically isolated semiconductor structures
US3771218A (en) * 1972-07-13 1973-11-13 Ibm Process for fabricating passivated transistors
CA1014830A (en) * 1972-11-15 1977-08-02 Klaus C. Wiemer Method of forming doped dielectric layers utilizing reactive plasma deposition
US3793088A (en) * 1972-11-15 1974-02-19 Bell Telephone Labor Inc Compatible pnp and npn devices in an integrated circuit
US3924024A (en) * 1973-04-02 1975-12-02 Ncr Co Process for fabricating MNOS non-volatile memories
US3874919A (en) * 1974-03-13 1975-04-01 Ibm Oxidation resistant mask layer and process for producing recessed oxide region in a silicon body

Also Published As

Publication number Publication date
IT1063373B (it) 1985-02-11
JPS51148362A (en) 1976-12-20
SE7606171L (sv) 1976-12-05
US4113515A (en) 1978-09-12
ES448459A1 (es) 1977-12-01
FR2313770B1 (de) 1982-04-23
FR2313770A1 (fr) 1976-12-31
JPS5435066B2 (de) 1979-10-31
CA1068010A (en) 1979-12-11
DE2623009A1 (de) 1976-12-09
BR7603505A (pt) 1977-01-11
AU509006B2 (en) 1980-04-17
DE2623009C2 (de) 1983-06-30
BE842511A (fr) 1976-12-02
AU1448976A (en) 1977-12-08
GB1550645A (en) 1979-08-15

Similar Documents

Publication Publication Date Title
NL7506594A (nl) Werkwijze voor het vervaardigen van een halfge- leiderinrichting en halfgeleiderinrichting ver- vaardigd met behulp van de werkwijze.
NL7609815A (nl) Werkwijze voor het vervaardigen van een half- geleiderinrichting en halfgeleiderinrichting vervaardigd met behulp van de werkwijze.
NL7510903A (nl) Werkwijze voor het vervaardigen van een halfgelei- derinrichting, en inrichting vervaardigd volgens de werkwijze.
NL176818C (nl) Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
NL7613440A (nl) Werkwijze en inrichting voor het vervaardigen van een halfgeleiderinrichting.
NL7700521A (nl) Werkwijze voor het vervaardigen van een con- servenblik en inrichting voor de uitvoering van deze werkwijze.
NL7810373A (nl) Werkwijze voor het vervaardigen van een halfgeleider- inrichting.
NL7613893A (nl) Halfgeleiderinrichting met gepassiveerd opper- vlak, en werkwijze voor het vervaardigen van de inrichting.
NL186478C (nl) Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
NL7807983A (nl) Werkwijze voor de vervaardiging van een halfgeleiderin- richting.
NL7812385A (nl) Werkwijze voor het vervaardigen van een halfgeleider- inrichting.
NL7608923A (nl) Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
NL176416C (nl) Werkwijze voor het vervaardigen van een thermo-electrische halfgeleiderinrichting.
NL7610283A (nl) Werkwijze voor het vervaardigen van een veldeffekttransistor.
NL7713004A (nl) Werkwijze voor het vervaardigen van halfgelei- derinrichtingen.
NL7609420A (nl) Werkwijze voor de vervaardiging van een half-geleiderinrichting.
NL7609607A (nl) Werkwijze voor het vervaardigen van een half- geleiderinrichting en halfgeleiderinrichting vervaardigd met behulp van de werkwijze.
NL7612438A (nl) Werkwijze voor het vervaardigen van een houder alsmede inrichting voor het toepassen van deze werkwijze.
NL7606206A (nl) Werkwijze voor het vervaardigen van een trilin- richting, alsmede een trilinrichting.
NL7607298A (nl) Werkwijze voor het vervaardigen van een inrichting en inrichting vervaardigd volgens de werkwijze.
NL188124C (nl) Werkwijze voor het vervaardigen van een halfgeleiderinrichting van het ladinggekoppelde type.
NL7505134A (nl) Werkwijze voor het vervaardigen van een half- geleiderinrichting.
NL7509464A (nl) Werkwijze voor het vervaardigen van een half- geleiderinrichting.
NL7611057A (nl) Werkwijze voor de vervaardiging van een halfgeleiderinrichting.
NL7710635A (nl) Werkwijze voor het vervaardigen van een halfgeleiderinrichting.

Legal Events

Date Code Title Description
BC A request for examination has been filed
A85 Still pending on 85-01-01
BV The patent application has lapsed