BE842511A - Dispositif semi-conducteur et son procede de fabrication - Google Patents
Dispositif semi-conducteur et son procede de fabricationInfo
- Publication number
- BE842511A BE842511A BE167575A BE167575A BE842511A BE 842511 A BE842511 A BE 842511A BE 167575 A BE167575 A BE 167575A BE 167575 A BE167575 A BE 167575A BE 842511 A BE842511 A BE 842511A
- Authority
- BE
- Belgium
- Prior art keywords
- semiconductor device
- manufacturing process
- manufacturing
- semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
- H01L21/02329—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen
- H01L21/02332—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen into an oxide layer, e.g. changing SiO to SiON
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- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H01L21/28202—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
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- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
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- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
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- Y10S438/00—Semiconductor device manufacturing: process
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Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7506594A NL7506594A (nl) | 1975-06-04 | 1975-06-04 | Werkwijze voor het vervaardigen van een halfge- leiderinrichting en halfgeleiderinrichting ver- vaardigd met behulp van de werkwijze. |
Publications (1)
Publication Number | Publication Date |
---|---|
BE842511A true BE842511A (fr) | 1976-12-02 |
Family
ID=19823876
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE167575A BE842511A (fr) | 1975-06-04 | 1976-06-02 | Dispositif semi-conducteur et son procede de fabrication |
Country Status (13)
Country | Link |
---|---|
US (1) | US4113515A (xx) |
JP (1) | JPS51148362A (xx) |
AU (1) | AU509006B2 (xx) |
BE (1) | BE842511A (xx) |
BR (1) | BR7603505A (xx) |
CA (1) | CA1068010A (xx) |
DE (1) | DE2623009C2 (xx) |
ES (1) | ES448459A1 (xx) |
FR (1) | FR2313770A1 (xx) |
GB (1) | GB1550645A (xx) |
IT (1) | IT1063373B (xx) |
NL (1) | NL7506594A (xx) |
SE (1) | SE7606171L (xx) |
Families Citing this family (52)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT1089299B (it) * | 1977-01-26 | 1985-06-18 | Mostek Corp | Procedimento per fabbricare un dispositivo semiconduttore |
NL7706802A (nl) * | 1977-06-21 | 1978-12-27 | Philips Nv | Werkwijze voor het vervaardigen van een half- geleiderinrichting en halfgeleiderinrichting vervaardigd met behulp van de werkwijze. |
DE2742951A1 (de) * | 1977-09-23 | 1979-04-05 | Siemens Ag | Verfahren zum herstellen von mehrlagen-silizium-gate-strukturen auf einer halbleitenden siliziumschicht |
EP0154670B1 (en) * | 1978-06-14 | 1991-05-08 | Fujitsu Limited | Process for producing a semiconductor device having insulating film |
EP0072603B1 (en) * | 1978-06-14 | 1986-10-01 | Fujitsu Limited | Process for producing a semiconductor device having an insulating layer of silicon dioxide covered by a film of silicon oxynitride |
JPS5534444A (en) * | 1978-08-31 | 1980-03-11 | Fujitsu Ltd | Preparation of semiconductor device |
JPS5845177B2 (ja) * | 1979-03-09 | 1983-10-07 | 富士通株式会社 | 半導体表面絶縁膜の形成法 |
US4266985A (en) * | 1979-05-18 | 1981-05-12 | Fujitsu Limited | Process for producing a semiconductor device including an ion implantation step in combination with direct thermal nitridation of the silicon substrate |
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DE1696625C3 (de) * | 1966-10-07 | 1979-03-08 | Syumpei, Yamazaki | Verfahren zum Erzeugen einer Nitridschutzschicht auf einem Halbleiterkörper |
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US3874919A (en) * | 1974-03-13 | 1975-04-01 | Ibm | Oxidation resistant mask layer and process for producing recessed oxide region in a silicon body |
-
1975
- 1975-06-04 NL NL7506594A patent/NL7506594A/xx not_active Application Discontinuation
-
1976
- 1976-03-29 US US05/671,419 patent/US4113515A/en not_active Expired - Lifetime
- 1976-05-22 DE DE2623009A patent/DE2623009C2/de not_active Expired
- 1976-05-27 CA CA253,508A patent/CA1068010A/en not_active Expired
- 1976-06-01 AU AU14489/76A patent/AU509006B2/en not_active Expired
- 1976-06-01 JP JP51064028A patent/JPS51148362A/ja active Granted
- 1976-06-01 IT IT23871/76A patent/IT1063373B/it active
- 1976-06-01 SE SE7606171A patent/SE7606171L/xx unknown
- 1976-06-01 GB GB22574/76A patent/GB1550645A/en not_active Expired
- 1976-06-01 BR BR3505/76A patent/BR7603505A/pt unknown
- 1976-06-02 ES ES448459A patent/ES448459A1/es not_active Expired
- 1976-06-02 FR FR7616626A patent/FR2313770A1/fr active Granted
- 1976-06-02 BE BE167575A patent/BE842511A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
NL7506594A (nl) | 1976-12-07 |
DE2623009A1 (de) | 1976-12-09 |
JPS5435066B2 (xx) | 1979-10-31 |
ES448459A1 (es) | 1977-12-01 |
CA1068010A (en) | 1979-12-11 |
SE7606171L (sv) | 1976-12-05 |
US4113515A (en) | 1978-09-12 |
AU509006B2 (en) | 1980-04-17 |
BR7603505A (pt) | 1977-01-11 |
GB1550645A (en) | 1979-08-15 |
FR2313770B1 (xx) | 1982-04-23 |
AU1448976A (en) | 1977-12-08 |
FR2313770A1 (fr) | 1976-12-31 |
JPS51148362A (en) | 1976-12-20 |
DE2623009C2 (de) | 1983-06-30 |
IT1063373B (it) | 1985-02-11 |
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