NL194380B - Dunnefilmtransistor voor vloeibaarkristalweergeefinrichting en werkwijze voor het fabriceren daarvan. - Google Patents

Dunnefilmtransistor voor vloeibaarkristalweergeefinrichting en werkwijze voor het fabriceren daarvan.

Info

Publication number
NL194380B
NL194380B NL9302256A NL9302256A NL194380B NL 194380 B NL194380 B NL 194380B NL 9302256 A NL9302256 A NL 9302256A NL 9302256 A NL9302256 A NL 9302256A NL 194380 B NL194380 B NL 194380B
Authority
NL
Netherlands
Prior art keywords
manufacturing
liquid crystal
thin film
crystal display
film transistor
Prior art date
Application number
NL9302256A
Other languages
English (en)
Other versions
NL194380C (nl
NL9302256A (nl
Inventor
Tsutomu Nomoto
Hideki Kamada
Ichiro Ohno
Original Assignee
Casio Computer Co Ltd
Oki Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP34760292A external-priority patent/JPH06202148A/ja
Priority claimed from JP34760192A external-priority patent/JPH06202147A/ja
Application filed by Casio Computer Co Ltd, Oki Electric Ind Co Ltd filed Critical Casio Computer Co Ltd
Publication of NL9302256A publication Critical patent/NL9302256A/nl
Publication of NL194380B publication Critical patent/NL194380B/nl
Application granted granted Critical
Publication of NL194380C publication Critical patent/NL194380C/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Thin Film Transistor (AREA)
NL9302256A 1992-12-28 1993-12-24 Dunnefilmtransistor voor vloeibaarkristalweergeefinrichting en werkwijze voor het fabriceren daarvan. NL194380C (nl)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP34760292A JPH06202148A (ja) 1992-12-28 1992-12-28 液晶表示装置用薄膜トランジスタ及びその製造方法
JP34760192 1992-12-28
JP34760292 1992-12-28
JP34760192A JPH06202147A (ja) 1992-12-28 1992-12-28 液晶表示装置用薄膜トランジスタ及びその製造方法

Publications (3)

Publication Number Publication Date
NL9302256A NL9302256A (nl) 1994-07-18
NL194380B true NL194380B (nl) 2001-10-01
NL194380C NL194380C (nl) 2002-02-04

Family

ID=26578557

Family Applications (1)

Application Number Title Priority Date Filing Date
NL9302256A NL194380C (nl) 1992-12-28 1993-12-24 Dunnefilmtransistor voor vloeibaarkristalweergeefinrichting en werkwijze voor het fabriceren daarvan.

Country Status (3)

Country Link
US (1) US5539551A (nl)
KR (1) KR0138081B1 (nl)
NL (1) NL194380C (nl)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2738289B2 (ja) * 1993-12-30 1998-04-08 日本電気株式会社 液晶表示装置の製造方法
FR2721428B1 (fr) * 1994-06-17 1996-09-13 France Telecom Ecran d'affichage à matrice active à commande multiplexée.
JP3240858B2 (ja) * 1994-10-19 2001-12-25 ソニー株式会社 カラー表示装置
KR0171102B1 (ko) * 1995-08-29 1999-03-20 구자홍 액정표시장치 구조 및 제조방법
US5835177A (en) * 1995-10-05 1998-11-10 Kabushiki Kaisha Toshiba Array substrate with bus lines takeout/terminal sections having multiple conductive layers
JP3222762B2 (ja) * 1996-04-26 2001-10-29 シャープ株式会社 アクティブマトリクス基板およびその製造方法
US5670062A (en) * 1996-06-07 1997-09-23 Lucent Technologies Inc. Method for producing tapered lines
KR100476622B1 (ko) * 1997-10-13 2005-08-23 삼성전자주식회사 몰리브덴-텅스턴합금을사용한배선을이용한액정표시장치및그제조방법
KR100303446B1 (ko) * 1998-10-29 2002-10-04 삼성전자 주식회사 액정표시장치용박막트랜지스터기판의제조방법
KR100739366B1 (ko) * 1999-12-20 2007-07-16 엘지.필립스 엘시디 주식회사 박막 트랜지스터 및 그 제조방법
JP2001194676A (ja) * 2000-01-07 2001-07-19 Hitachi Ltd 液晶表示装置
TW504846B (en) * 2000-06-28 2002-10-01 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
TW525216B (en) * 2000-12-11 2003-03-21 Semiconductor Energy Lab Semiconductor device, and manufacturing method thereof
SG111923A1 (en) 2000-12-21 2005-06-29 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
SG116443A1 (en) * 2001-03-27 2005-11-28 Semiconductor Energy Lab Wiring and method of manufacturing the same, and wiring board and method of manufacturing the same.
KR100617290B1 (ko) * 2003-12-30 2006-08-30 엘지.필립스 엘시디 주식회사 반사투과형 액정표시장치용 어레이기판과 그 제조방법
KR100978264B1 (ko) * 2006-12-26 2010-08-26 엘지디스플레이 주식회사 반사투과형 액정표시장치 및 그 제조방법
US8110829B2 (en) * 2007-05-31 2012-02-07 Lg Display Co., Ltd. Array substrate of liquid crystal display and method for fabricating the same
US8084859B2 (en) * 2007-10-12 2011-12-27 Panasonic Corporation Semiconductor device
JP2009103732A (ja) * 2007-10-19 2009-05-14 Sony Corp 表示装置およびその製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5461875A (en) * 1977-10-27 1979-05-18 Sony Corp Etching method of aluminum wiring
JPS6014473A (ja) * 1983-07-05 1985-01-25 Asahi Glass Co Ltd 薄膜トランジスタの電極構造
JPS6077420A (ja) * 1983-10-04 1985-05-02 Seiko Epson Corp 半導体装置
JPH01144682A (ja) * 1987-11-30 1989-06-06 Nec Corp 薄膜トランジスタの製造方法
JPH039569A (ja) * 1989-06-07 1991-01-17 Toshiba Corp 薄膜トランジスタ
US5162933A (en) * 1990-05-16 1992-11-10 Nippon Telegraph And Telephone Corporation Active matrix structure for liquid crystal display elements wherein each of the gate/data lines includes at least a molybdenum-base alloy layer containing 0.5 to 10 wt. % of chromium
JPH04111322A (ja) * 1990-08-30 1992-04-13 Stanley Electric Co Ltd 薄膜トランジスタの製造方法
US5198694A (en) * 1990-10-05 1993-03-30 General Electric Company Thin film transistor structure with improved source/drain contacts
JPH04505832A (ja) * 1990-10-05 1992-10-08 ゼネラル・エレクトリック・カンパニイ 改良されたソース／ドレイン接点を持つ薄膜トランジスタ構造
JP2690404B2 (ja) * 1991-03-07 1997-12-10 シャープ株式会社 アクティブマトリクス基板
JP2952075B2 (ja) * 1991-06-12 1999-09-20 キヤノン株式会社 液晶素子の製造法

Also Published As

Publication number Publication date
KR940016621A (ko) 1994-07-23
US5539551A (en) 1996-07-23
KR0138081B1 (ko) 1998-06-15
NL194380C (nl) 2002-02-04
NL9302256A (nl) 1994-07-18

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Legal Events

Date Code Title Description
A1A A request for search or an international-type search has been filed
BB A search report has been drawn up
BC A request for examination has been filed
V1 Lapsed because of non-payment of the annual fee

Effective date: 20090701