NL192281B - Halfgeleider-lichtdetectorinrichting. - Google Patents

Halfgeleider-lichtdetectorinrichting.

Info

Publication number
NL192281B
NL192281B NL9002098A NL9002098A NL192281B NL 192281 B NL192281 B NL 192281B NL 9002098 A NL9002098 A NL 9002098A NL 9002098 A NL9002098 A NL 9002098A NL 192281 B NL192281 B NL 192281B
Authority
NL
Netherlands
Prior art keywords
semiconductor light
light detector
detector device
semiconductor
light
Prior art date
Application number
NL9002098A
Other languages
English (en)
Other versions
NL9002098A (nl
NL192281C (nl
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of NL9002098A publication Critical patent/NL9002098A/nl
Publication of NL192281B publication Critical patent/NL192281B/nl
Application granted granted Critical
Publication of NL192281C publication Critical patent/NL192281C/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022416—Electrodes for devices characterised by at least one potential jump barrier or surface barrier comprising ring electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
NL9002098A 1990-01-25 1990-09-26 Halfgeleider-lichtdetectorinrichting. NL192281C (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1665490 1990-01-25
JP2016654A JPH03220782A (ja) 1990-01-25 1990-01-25 半導体受光装置

Publications (3)

Publication Number Publication Date
NL9002098A NL9002098A (nl) 1991-08-16
NL192281B true NL192281B (nl) 1996-12-02
NL192281C NL192281C (nl) 1997-04-03

Family

ID=11922332

Family Applications (1)

Application Number Title Priority Date Filing Date
NL9002098A NL192281C (nl) 1990-01-25 1990-09-26 Halfgeleider-lichtdetectorinrichting.

Country Status (4)

Country Link
US (1) US5040039A (nl)
JP (1) JPH03220782A (nl)
DE (1) DE4039380C2 (nl)
NL (1) NL192281C (nl)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0513798A (ja) * 1991-07-01 1993-01-22 Mitsubishi Electric Corp 半導体受光装置
JP2774006B2 (ja) * 1991-12-25 1998-07-09 三菱電機株式会社 半導体受光装置及びその製造方法
US5189296A (en) * 1992-04-03 1993-02-23 International Business Machines Corporation Optical receiver having a low capacitance integrated photodetector
US5593902A (en) * 1994-05-23 1997-01-14 Texas Instruments Incorporated Method of making photodiodes for low dark current operation having geometric enhancement
JPH10173158A (ja) * 1996-12-05 1998-06-26 Denso Corp 光センサｉｃ
JP3601761B2 (ja) 1998-11-19 2004-12-15 松下電器産業株式会社 受光素子およびその製造方法
JP4450454B2 (ja) * 1999-08-26 2010-04-14 Ｏｋｉセミコンダクタ株式会社 半導体受光素子
CA2405825C (en) 2000-04-17 2010-11-09 Nellcor Puritan Bennett Incorporated Pulse oximeter sensor with piece-wise function
JP2001358359A (ja) * 2000-06-16 2001-12-26 Nippon Sheet Glass Co Ltd 半導体受光素子
US6593636B1 (en) * 2000-12-05 2003-07-15 Udt Sensors, Inc. High speed silicon photodiodes and method of manufacture
JP4134695B2 (ja) * 2002-11-21 2008-08-20 住友電気工業株式会社 光モジュール
US8686529B2 (en) 2010-01-19 2014-04-01 Osi Optoelectronics, Inc. Wavelength sensitive sensor photodiodes
US8120023B2 (en) 2006-06-05 2012-02-21 Udt Sensors, Inc. Low crosstalk, front-side illuminated, back-side contact photodiode array
US7535033B2 (en) * 2004-09-14 2009-05-19 Banpil Photonics, Inc. Multicolor photodiode array and method of manufacturing
US7590439B2 (en) 2005-08-08 2009-09-15 Nellcor Puritan Bennett Llc Bi-stable medical sensor and technique for using the same
US7869850B2 (en) 2005-09-29 2011-01-11 Nellcor Puritan Bennett Llc Medical sensor for reducing motion artifacts and technique for using the same
US7904130B2 (en) 2005-09-29 2011-03-08 Nellcor Puritan Bennett Llc Medical sensor and technique for using the same
US8233954B2 (en) 2005-09-30 2012-07-31 Nellcor Puritan Bennett Llc Mucosal sensor for the assessment of tissue and blood constituents and technique for using the same
US7555327B2 (en) 2005-09-30 2009-06-30 Nellcor Puritan Bennett Llc Folding medical sensor and technique for using the same
US8073518B2 (en) 2006-05-02 2011-12-06 Nellcor Puritan Bennett Llc Clip-style medical sensor and technique for using the same
US8175671B2 (en) 2006-09-22 2012-05-08 Nellcor Puritan Bennett Llc Medical sensor for reducing signal artifacts and technique for using the same
US8190224B2 (en) 2006-09-22 2012-05-29 Nellcor Puritan Bennett Llc Medical sensor for reducing signal artifacts and technique for using the same
US8396527B2 (en) 2006-09-22 2013-03-12 Covidien Lp Medical sensor for reducing signal artifacts and technique for using the same
US7574245B2 (en) 2006-09-27 2009-08-11 Nellcor Puritan Bennett Llc Flexible medical sensor enclosure
US7890153B2 (en) 2006-09-28 2011-02-15 Nellcor Puritan Bennett Llc System and method for mitigating interference in pulse oximetry
US8068891B2 (en) 2006-09-29 2011-11-29 Nellcor Puritan Bennett Llc Symmetric LED array for pulse oximetry
US8175667B2 (en) 2006-09-29 2012-05-08 Nellcor Puritan Bennett Llc Symmetric LED array for pulse oximetry
US7684842B2 (en) 2006-09-29 2010-03-23 Nellcor Puritan Bennett Llc System and method for preventing sensor misuse
US7476131B2 (en) 2006-09-29 2009-01-13 Nellcor Puritan Bennett Llc Device for reducing crosstalk
US9178092B2 (en) 2006-11-01 2015-11-03 Osi Optoelectronics, Inc. Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays
US7894869B2 (en) 2007-03-09 2011-02-22 Nellcor Puritan Bennett Llc Multiple configuration medical sensor and technique for using the same
US8352004B2 (en) 2007-12-21 2013-01-08 Covidien Lp Medical sensor and technique for using the same
US8346328B2 (en) 2007-12-21 2013-01-01 Covidien Lp Medical sensor and technique for using the same
US8897850B2 (en) 2007-12-31 2014-11-25 Covidien Lp Sensor with integrated living hinge and spring
US8461032B2 (en) * 2008-03-05 2013-06-11 Varian Semiconductor Equipment Associates, Inc. Use of dopants with different diffusivities for solar cell manufacture
JP2009259893A (ja) * 2008-04-14 2009-11-05 Panasonic Corp 電磁波受信装置、イメージング装置、および電磁波受信方法
US7887345B2 (en) * 2008-06-30 2011-02-15 Nellcor Puritan Bennett Llc Single use connector for pulse oximetry sensors
US7880884B2 (en) 2008-06-30 2011-02-01 Nellcor Puritan Bennett Llc System and method for coating and shielding electronic sensor components
US8071935B2 (en) * 2008-06-30 2011-12-06 Nellcor Puritan Bennett Llc Optical detector with an overmolded faraday shield
JP2012503314A (ja) 2008-09-15 2012-02-02 オーエスアイ．オプトエレクトロニクス．インコーポレイテッド 浅いｎ＋層を有する薄い能動層フィッシュボーン・フォトダイオードとその製造方法
US8417309B2 (en) 2008-09-30 2013-04-09 Covidien Lp Medical sensor
US20100163759A1 (en) * 2008-12-31 2010-07-01 Stmicroelectronics S.R.L. Radiation sensor with photodiodes being integrated on a semiconductor substrate and corresponding integration process
US8399909B2 (en) 2009-05-12 2013-03-19 Osi Optoelectronics, Inc. Tetra-lateral position sensing detector
US8509869B2 (en) 2009-05-15 2013-08-13 Covidien Lp Method and apparatus for detecting and analyzing variations in a physiologic parameter
US8912615B2 (en) 2013-01-24 2014-12-16 Osi Optoelectronics, Inc. Shallow junction photodiode for detecting short wavelength light

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51138185A (en) * 1975-05-26 1976-11-29 Oki Electric Ind Co Ltd Semi-conductor device
JPS55140275A (en) * 1979-04-18 1980-11-01 Fujitsu Ltd Semiconductor photodetector
JPS60182778A (ja) * 1984-02-29 1985-09-18 Fujitsu Ltd 半導体受光装置
JPS61172381A (ja) * 1984-12-22 1986-08-04 Fujitsu Ltd ＩｎＰ系化合物半導体装置
JPS61199677A (ja) * 1985-03-01 1986-09-04 Shimadzu Corp Ｐｉｎフオトダイオ−ド
JPS63224268A (ja) * 1987-03-12 1988-09-19 Mitsubishi Electric Corp 半導体受光装置
JPS6423580A (en) * 1987-07-20 1989-01-26 Fujitsu Ltd Semiconductor photodetector device

Also Published As

Publication number Publication date
DE4039380A1 (de) 1991-08-01
NL9002098A (nl) 1991-08-16
DE4039380C2 (de) 1994-03-24
NL192281C (nl) 1997-04-03
US5040039A (en) 1991-08-13
JPH03220782A (ja) 1991-09-27

Similar Documents

Publication Publication Date Title
NL192281B (nl) Halfgeleider-lichtdetectorinrichting.
DE523680T1 (de) Photometrisches Gerät.
DE69132354D1 (de) Halbleitervorrichtung
DE69104429T2 (de) Optisches Halbleiterbauelement.
DE69019498D1 (de) Optische Halbleitervorrichtung.
DE69112442D1 (de) Tropfendetektor.
NO914401D0 (no) Fotodetektor
DE3888168D1 (de) Detektorvorrichtung.
DE69009448D1 (de) Halbleiterlaseranordnung.
DE59004235D1 (de) Strahlungserzeugendes Halbleiterbauelement.
DE69001548T2 (de) Lichtemittierende halbleitervorrichtung.
DE69131118T2 (de) Halbleitereinheit
DE69115079D1 (de) Nichtflüchtige Halbleitervorrichtung.
FR2670050B1 (fr) Detecteur optoelectronique a semiconducteurs.
DE69127494D1 (de) Halbleiteranordnung
DE69109014T2 (de) Flip-Chip-Halbleiteranordnung.
DE69112185D1 (de) Lichtquelleneinrichtung.
DE69220146T2 (de) Halbleiterfotodetektorvorrichtung
DE69202363D1 (de) Halbleiteranordnung.
DE69328579D1 (de) Halbleiter-Lichtdetektorvorrichtung
NO910538D0 (no) Innretning for kjemisk lys.
DE69023625D1 (de) Halbleitervorrichtung.
DE69009422D1 (de) Halbleiterfotodetektorvorrichtung.
DE69128297T2 (de) Halbleiterbauelement
NO913501D0 (no) Pyroelektrisk detektoranordning.

Legal Events

Date Code Title Description
A1C A request for examination has been filed
V1 Lapsed because of non-payment of the annual fee

Effective date: 20060401