MY8600736A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
MY8600736A
MY8600736A MY736/86A MY8600736A MY8600736A MY 8600736 A MY8600736 A MY 8600736A MY 736/86 A MY736/86 A MY 736/86A MY 8600736 A MY8600736 A MY 8600736A MY 8600736 A MY8600736 A MY 8600736A
Authority
MY
Malaysia
Prior art keywords
integrated circuit
semiconductor integrated
circuit device
semiconductor
integrated
Prior art date
Application number
MY736/86A
Other languages
English (en)
Inventor
Yoshibumi Ando
Takashi Sakamoto
Kanji Yoh
Hisahiro Moriushi
Sumiaki Takei
Original Assignee
Hitachi Ltd
Hitachi Microcumputer Eng
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Microcumputer Eng filed Critical Hitachi Ltd
Publication of MY8600736A publication Critical patent/MY8600736A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/62—Protection against overvoltage, e.g. fuses, shunts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/647—Resistive arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
  • Protection Of Static Devices (AREA)
MY736/86A 1980-08-20 1986-12-30 Semiconductor integrated circuit device MY8600736A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11351880A JPS5737876A (en) 1980-08-20 1980-08-20 Semiconductor integrated circuit apparatus

Publications (1)

Publication Number Publication Date
MY8600736A true MY8600736A (en) 1986-12-31

Family

ID=14614368

Family Applications (1)

Application Number Title Priority Date Filing Date
MY736/86A MY8600736A (en) 1980-08-20 1986-12-30 Semiconductor integrated circuit device

Country Status (8)

Country Link
US (1) US4514646A (de)
JP (1) JPS5737876A (de)
KR (1) KR880001592B1 (de)
DE (1) DE3131322A1 (de)
GB (1) GB2089611B (de)
HK (1) HK54486A (de)
IN (1) IN154168B (de)
MY (1) MY8600736A (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6027145A (ja) * 1983-07-25 1985-02-12 Hitachi Ltd 半導体集積回路装置
CA1228894A (en) * 1983-08-24 1987-11-03 Hendrikus C.G. Ligtenberg Apparatus for selectively measuring ions in a liquid
NL8302963A (nl) * 1983-08-24 1985-03-18 Cordis Europ Inrichting voor het selectief meten van ionen in een vloeistof.
JPS6066049U (ja) * 1983-10-12 1985-05-10 日本電気株式会社 Ｃ−ｍｏｓ型電界効果トランジスタ
JPS6115198A (ja) * 1984-06-30 1986-01-23 ヤマハ株式会社 情報入力装置
US4692781B2 (en) * 1984-06-06 1998-01-20 Texas Instruments Inc Semiconductor device with electrostatic discharge protection
US4760292A (en) * 1986-10-29 1988-07-26 Eta Systems, Inc. Temperature compensated output buffer
DE3703838A1 (de) * 1987-02-07 1988-08-25 Hanning Elektro Werke Ansteuerverfahren zum schutz von mos-leistungstransistoren an induktiven lasten
FR2636481B1 (fr) * 1988-09-14 1990-11-30 Sgs Thomson Microelectronics Diode active integrable
US4990802A (en) * 1988-11-22 1991-02-05 At&T Bell Laboratories ESD protection for output buffers
US5041741A (en) * 1990-09-14 1991-08-20 Ncr Corporation Transient immune input buffer
JP2517177B2 (ja) * 1991-02-13 1996-07-24 松下電器産業株式会社 音響発生装置
GB9414261D0 (en) * 1994-07-14 1994-08-31 Motorola Gmbh MOS N-channel transistor protection
US5833824A (en) * 1996-11-15 1998-11-10 Rosemount Analytical Inc. Dorsal substrate guarded ISFET sensor
JPH11136111A (ja) * 1997-10-30 1999-05-21 Sony Corp 高周波回路
US6765774B2 (en) * 2001-12-28 2004-07-20 Iwatt, Inc. High impedance insertion system for blocking EMI

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1170705A (en) * 1967-02-27 1969-11-12 Hitachi Ltd An Insulated Gate Type Field Effect Semiconductor Device having a Breakdown Preventing Circuit Device and a method of manufacturing the same
US3673428A (en) * 1970-09-18 1972-06-27 Rca Corp Input transient protection for complementary insulated gate field effect transistor integrated circuit device
US3746946A (en) * 1972-10-02 1973-07-17 Motorola Inc Insulated gate field-effect transistor input protection circuit
DE2348432C3 (de) * 1973-09-26 1980-01-24 Siemens Ag, 1000 Berlin Und 8000 Muenchen Elektronischer MOS-FET-Baustein mit mehreren Signalempfangsanschlüssen
JPS5422862B2 (de) * 1974-11-22 1979-08-09
JPS5189392A (de) * 1975-02-03 1976-08-05
US4160923A (en) * 1975-02-05 1979-07-10 Sharp Kabushiki Kaisha Touch sensitive electronic switching circuit for electronic wristwatches
JPS51111042A (en) * 1975-03-26 1976-10-01 Hitachi Ltd Gate circuit
GB1558502A (en) * 1975-07-18 1980-01-03 Tokyo Shibaura Electric Co Semiconductor integrated circuit device
US4209713A (en) * 1975-07-18 1980-06-24 Tokyo Shibaura Electric Co., Ltd. Semiconductor integrated circuit device in which difficulties caused by parasitic transistors are eliminated
DE2539890B2 (de) * 1975-09-08 1978-06-01 Siemens Ag, 1000 Berlin Und 8000 Muenchen Schaltungsanordnung zum Schutz von Eingängen integrierter MOS-Schaltkreise
JPS5299786A (en) * 1976-02-18 1977-08-22 Agency Of Ind Science & Technol Mos integrated circuit
NL176322C (nl) * 1976-02-24 1985-03-18 Philips Nv Halfgeleiderinrichting met beveiligingsschakeling.
US4066918A (en) * 1976-09-30 1978-01-03 Rca Corporation Protection circuitry for insulated-gate field-effect transistor (IGFET) circuits
JPS5369589A (en) * 1976-12-03 1978-06-21 Mitsubishi Electric Corp Insulating gate type field effect transistor with protective device
JPS5376679A (en) * 1976-12-17 1978-07-07 Nec Corp Semiconductor device
JPS5910587B2 (ja) * 1977-08-10 1984-03-09 株式会社日立製作所 半導体装置の保護装置
JPS5529108A (en) * 1978-08-23 1980-03-01 Hitachi Ltd Semiconductor resistance element

Also Published As

Publication number Publication date
KR880001592B1 (ko) 1988-08-24
JPS641067B2 (de) 1989-01-10
DE3131322A1 (de) 1982-04-22
GB2089611A (en) 1982-06-23
IN154168B (de) 1984-09-29
JPS5737876A (en) 1982-03-02
HK54486A (en) 1986-08-01
GB2089611B (en) 1984-08-01
US4514646A (en) 1985-04-30
KR830006822A (ko) 1983-10-06

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