MY7500146A - Input transient protection for complementary insulated gate field effect transistor integrated circuit device - Google Patents

Input transient protection for complementary insulated gate field effect transistor integrated circuit device

Info

Publication number
MY7500146A
MY7500146A MY146/75A MY7500146A MY7500146A MY 7500146 A MY7500146 A MY 7500146A MY 146/75 A MY146/75 A MY 146/75A MY 7500146 A MY7500146 A MY 7500146A MY 7500146 A MY7500146 A MY 7500146A
Authority
MY
Malaysia
Prior art keywords
integrated circuit
field effect
effect transistor
circuit device
insulated gate
Prior art date
Application number
MY146/75A
Other languages
English (en)
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of MY7500146A publication Critical patent/MY7500146A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0927—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate
MY146/75A 1972-03-27 1975-12-30 Input transient protection for complementary insulated gate field effect transistor integrated circuit device MY7500146A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US23848672A 1972-03-27 1972-03-27

Publications (1)

Publication Number Publication Date
MY7500146A true MY7500146A (en) 1975-12-31

Family

ID=22898111

Family Applications (1)

Application Number Title Priority Date Filing Date
MY146/75A MY7500146A (en) 1972-03-27 1975-12-30 Input transient protection for complementary insulated gate field effect transistor integrated circuit device

Country Status (9)

Country Link
US (1) US3712995A (xx)
JP (1) JPS5422277B2 (xx)
CA (1) CA959171A (xx)
DE (1) DE2313312A1 (xx)
FR (1) FR2177994B1 (xx)
GB (1) GB1359979A (xx)
IT (1) IT980654B (xx)
MY (1) MY7500146A (xx)
SE (1) SE383230B (xx)

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* Cited by examiner, † Cited by third party
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US3913125A (en) * 1973-06-11 1975-10-14 Gte Laboratories Inc Negative impedance converter
US4015147A (en) * 1974-06-26 1977-03-29 International Business Machines Corporation Low power transmission line terminator
US3955210A (en) * 1974-12-30 1976-05-04 International Business Machines Corporation Elimination of SCR structure
US4099074A (en) * 1975-03-06 1978-07-04 Sharp Kabushiki Kaisha Touch sensitive electronic switching circuitry for electronic wristwatches
US3967295A (en) * 1975-04-03 1976-06-29 Rca Corporation Input transient protection for integrated circuit element
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US4209713A (en) * 1975-07-18 1980-06-24 Tokyo Shibaura Electric Co., Ltd. Semiconductor integrated circuit device in which difficulties caused by parasitic transistors are eliminated
US4168442A (en) * 1975-07-18 1979-09-18 Tokyo Shibaura Electric Co., Ltd. CMOS FET device with abnormal current flow prevention
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DE2539890B2 (de) * 1975-09-08 1978-06-01 Siemens Ag, 1000 Berlin Und 8000 Muenchen Schaltungsanordnung zum Schutz von Eingängen integrierter MOS-Schaltkreise
US4203126A (en) * 1975-11-13 1980-05-13 Siliconix, Inc. CMOS structure and method utilizing retarded electric field for minimum latch-up
JPS5286083A (en) * 1976-01-12 1977-07-16 Hitachi Ltd Production of complimentary isolation gate field effect transistor
JPS5299786A (en) * 1976-02-18 1977-08-22 Agency Of Ind Science & Technol Mos integrated circuit
US4037140A (en) * 1976-04-14 1977-07-19 Rca Corporation Protection circuit for insulated-gate field-effect transistors (IGFETS)
US4068278A (en) * 1976-05-27 1978-01-10 Williams Bruce T Overload protection circuit for amplifiers
US4066918A (en) * 1976-09-30 1978-01-03 Rca Corporation Protection circuitry for insulated-gate field-effect transistor (IGFET) circuits
US4240093A (en) * 1976-12-10 1980-12-16 Rca Corporation Integrated circuit device including both N-channel and P-channel insulated gate field effect transistors
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US4135955A (en) * 1977-09-21 1979-01-23 Harris Corporation Process for fabricating high voltage cmos with self-aligned guard rings utilizing selective diffusion and local oxidation
US4350906A (en) * 1978-06-23 1982-09-21 Rca Corporation Circuit with dual-purpose terminal
US4240042A (en) * 1979-04-05 1980-12-16 Rca Corporation Bandwidth limited large signal IC amplifier stage
JPS55136726A (en) * 1979-04-11 1980-10-24 Nec Corp High voltage mos inverter and its drive method
US4282556A (en) * 1979-05-21 1981-08-04 Rca Corporation Input protection device for insulated gate field effect transistor
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US4295176A (en) * 1979-09-04 1981-10-13 Bell Telephone Laboratories, Incorporated Semiconductor integrated circuit protection arrangement
US4342045A (en) * 1980-04-28 1982-07-27 Advanced Micro Devices, Inc. Input protection device for integrated circuits
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JPS58119670A (ja) * 1982-01-11 1983-07-16 Nissan Motor Co Ltd 半導体装置
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JPS60767A (ja) * 1983-06-17 1985-01-05 Hitachi Ltd 半導体装置
JPS6027145A (ja) * 1983-07-25 1985-02-12 Hitachi Ltd 半導体集積回路装置
US4605980A (en) * 1984-03-02 1986-08-12 Zilog, Inc. Integrated circuit high voltage protection
US4745450A (en) * 1984-03-02 1988-05-17 Zilog, Inc. Integrated circuit high voltage protection
JPS60254651A (ja) * 1984-05-30 1985-12-16 Mitsubishi Electric Corp Ｃｍｏｓ回路の入力保護回路
US4626882A (en) * 1984-07-18 1986-12-02 International Business Machines Corporation Twin diode overvoltage protection structure
JPS6153761A (ja) * 1984-08-24 1986-03-17 Hitachi Ltd 半導体装置
US4739437A (en) * 1986-10-22 1988-04-19 Siemens-Pacesetter, Inc. Pacemaker output switch protection
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US4890143A (en) * 1988-07-28 1989-12-26 General Electric Company Protective clamp for MOS gated devices
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US4922371A (en) * 1988-11-01 1990-05-01 Teledyne Semiconductor ESD protection circuit for MOS integrated circuits
US5032742A (en) * 1989-07-28 1991-07-16 Dallas Semiconductor Corporation ESD circuit for input which exceeds power supplies in normal operation
JP3124144B2 (ja) * 1993-01-27 2001-01-15 株式会社東芝 半導体装置
JPH0888323A (ja) * 1994-09-19 1996-04-02 Nippondenso Co Ltd 半導体集積回路装置
KR960015900A (ko) * 1994-10-06 1996-05-22 반도체 장치 및 그 제조방법
US5844370A (en) 1996-09-04 1998-12-01 Micron Technology, Inc. Matrix addressable display with electrostatic discharge protection
US6410964B1 (en) * 1998-03-31 2002-06-25 Nec Corporation Semiconductor device capable of preventing gate oxide film from damage by plasma process and method of manufacturing the same
US6184557B1 (en) * 1999-01-28 2001-02-06 National Semiconductor Corporation I/O circuit that utilizes a pair of well structures as resistors to delay an ESD event and as diodes for ESD protection
TW495952B (en) * 2001-07-09 2002-07-21 Taiwan Semiconductor Mfg Electrostatic discharge protection device
JP5511124B2 (ja) * 2006-09-28 2014-06-04 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 絶縁ゲート型半導体装置
JP2008085188A (ja) * 2006-09-28 2008-04-10 Sanyo Electric Co Ltd 絶縁ゲート型半導体装置
JP5337470B2 (ja) * 2008-04-21 2013-11-06 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 絶縁ゲート型半導体装置
US8482029B2 (en) * 2011-05-27 2013-07-09 Infineon Technologies Austria Ag Semiconductor device and integrated circuit including the semiconductor device
CN110828564B (zh) 2018-08-13 2022-04-08 香港科技大学 具有半导体性栅极的场效应晶体管
JP2021010286A (ja) * 2019-07-03 2021-01-28 ローム株式会社 駆動回路
JP2021188518A (ja) 2020-05-26 2021-12-13 株式会社不二工機 排水ポンプ

Also Published As

Publication number Publication date
JPS5422277B2 (xx) 1979-08-06
CA959171A (en) 1974-12-10
IT980654B (it) 1974-10-10
FR2177994B1 (xx) 1977-09-02
GB1359979A (en) 1974-07-17
FR2177994A1 (xx) 1973-11-09
JPS4916391A (xx) 1974-02-13
SE383230B (sv) 1976-03-01
US3712995A (en) 1973-01-23
DE2313312A1 (de) 1973-10-11

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