MY7400255A - Complementary insulated gate field effect transistor integrated circuit - Google Patents

Complementary insulated gate field effect transistor integrated circuit

Info

Publication number
MY7400255A
MY7400255A MY7400255A MY7400255A MY7400255A MY 7400255 A MY7400255 A MY 7400255A MY 7400255 A MY7400255 A MY 7400255A MY 7400255 A MY7400255 A MY 7400255A MY 7400255 A MY7400255 A MY 7400255A
Authority
MY
Malaysia
Prior art keywords
integrated circuit
field effect
effect transistor
insulated gate
gate field
Prior art date
Application number
MY7400255A
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of MY7400255A publication Critical patent/MY7400255A/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0927Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
MY7400255A 1971-06-23 1974-12-30 Complementary insulated gate field effect transistor integrated circuit MY7400255A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US15589871A 1971-06-23 1971-06-23

Publications (1)

Publication Number Publication Date
MY7400255A true MY7400255A (en) 1974-12-31

Family

ID=22557218

Family Applications (1)

Application Number Title Priority Date Filing Date
MY7400255A MY7400255A (en) 1971-06-23 1974-12-30 Complementary insulated gate field effect transistor integrated circuit

Country Status (9)

Country Link
AU (1) AU459158B2 (en)
BE (1) BE785149A (en)
DE (1) DE2230344A1 (en)
FR (1) FR2147940B1 (en)
GB (1) GB1334835A (en)
IT (1) IT956336B (en)
MY (1) MY7400255A (en)
NL (1) NL7208568A (en)
SE (1) SE383445B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5944862A (en) * 1982-09-07 1984-03-13 Toshiba Corp Semiconductor device

Also Published As

Publication number Publication date
FR2147940B1 (en) 1977-07-22
DE2230344A1 (en) 1973-01-11
AU4350672A (en) 1973-12-20
NL7208568A (en) 1972-12-28
SE383445B (en) 1976-03-08
IT956336B (en) 1973-10-10
FR2147940A1 (en) 1973-03-11
AU459158B2 (en) 1975-02-27
GB1334835A (en) 1973-10-24
BE785149A (en) 1972-10-16

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