MY179461A - Base plate, and semiconductor device provided with base plate - Google Patents
Base plate, and semiconductor device provided with base plateInfo
- Publication number
- MY179461A MY179461A MYPI2016701892A MYPI2016701892A MY179461A MY 179461 A MY179461 A MY 179461A MY PI2016701892 A MYPI2016701892 A MY PI2016701892A MY PI2016701892 A MYPI2016701892 A MY PI2016701892A MY 179461 A MY179461 A MY 179461A
- Authority
- MY
- Malaysia
- Prior art keywords
- base plate
- joined
- semiconductor device
- concave
- device provided
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
- B23K1/0016—Brazing of electronic components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
- H01L23/4334—Auxiliary members in encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
- H01L2224/26152—Auxiliary members for layer connectors, e.g. spacers being formed on an item to be connected not being a semiconductor or solid-state body
- H01L2224/26175—Flow barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83385—Shape, e.g. interlocking features
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Connection Of Plates (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013248233 | 2013-11-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
MY179461A true MY179461A (en) | 2020-11-06 |
Family
ID=53199100
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MYPI2016701892A MY179461A (en) | 2013-11-29 | 2014-11-26 | Base plate, and semiconductor device provided with base plate |
Country Status (7)
Country | Link |
---|---|
JP (1) | JP6371204B2 (zh) |
KR (1) | KR101922783B1 (zh) |
CN (1) | CN105814681B (zh) |
DE (1) | DE112014006336T5 (zh) |
MY (1) | MY179461A (zh) |
TW (1) | TWI668808B (zh) |
WO (1) | WO2015080161A1 (zh) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6572732B2 (ja) * | 2015-10-27 | 2019-09-11 | 三菱マテリアル株式会社 | パワーモジュール |
WO2017119082A1 (ja) * | 2016-01-06 | 2017-07-13 | 新電元工業株式会社 | 半導体デバイスの載置台及び車載装置 |
JP6761592B2 (ja) * | 2016-03-31 | 2020-09-30 | 大日本印刷株式会社 | 電子デバイス及びその製造方法 |
JP6610590B2 (ja) * | 2017-03-21 | 2019-11-27 | トヨタ自動車株式会社 | 半導体装置とその製造方法 |
JP6930189B2 (ja) * | 2017-04-11 | 2021-09-01 | 富士電機株式会社 | モジュールの製造方法、はんだ、およびモジュール |
JP6890496B2 (ja) * | 2017-07-27 | 2021-06-18 | 京セラ株式会社 | 電子部品搭載基板、電子装置および電子部品搭載基板の製造方法 |
CN110010557B (zh) * | 2018-01-05 | 2021-10-26 | 深圳市绎立锐光科技开发有限公司 | 基板、利用基板形成封装结构的方法和封装结构 |
JP7005373B2 (ja) | 2018-02-09 | 2022-01-21 | 三菱電機株式会社 | パワーモジュールおよび電力変換装置 |
JP6933592B2 (ja) * | 2018-02-23 | 2021-09-08 | 日立Astemo株式会社 | イグナイタ |
JP7074621B2 (ja) * | 2018-09-05 | 2022-05-24 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP7237647B2 (ja) * | 2019-02-26 | 2023-03-13 | 京セラ株式会社 | 回路基板および電子装置 |
JP7482815B2 (ja) | 2021-03-09 | 2024-05-14 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP2022179872A (ja) | 2021-05-24 | 2022-12-06 | 富士電機株式会社 | 半導体装置 |
WO2023223881A1 (ja) * | 2022-05-18 | 2023-11-23 | ローム株式会社 | 電子装置 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0637122A (ja) * | 1992-07-15 | 1994-02-10 | Hitachi Ltd | 半導体装置 |
JPH0758273A (ja) * | 1993-08-16 | 1995-03-03 | Sony Corp | リードフレーム及びそれを用いた半導体装置 |
JPH10189845A (ja) * | 1996-12-25 | 1998-07-21 | Denso Corp | 半導体素子の放熱装置 |
CN100346488C (zh) * | 2002-02-28 | 2007-10-31 | 罗姆股份有限公司 | 发光二极管灯 |
JP3913090B2 (ja) * | 2002-02-28 | 2007-05-09 | ローム株式会社 | 発光ダイオードランプ |
JP2006140402A (ja) * | 2004-11-15 | 2006-06-01 | Toshiba Corp | 半導体集積回路装置 |
JP4904767B2 (ja) * | 2005-10-17 | 2012-03-28 | 富士電機株式会社 | 半導体装置 |
KR100752011B1 (ko) * | 2006-04-12 | 2007-08-28 | 삼성전기주식회사 | 패키지 기판의 스트립 포맷 및 그 배열 |
JP2009070907A (ja) * | 2007-09-11 | 2009-04-02 | Toyota Motor Corp | 半導体装置 |
JP2009094157A (ja) * | 2007-10-04 | 2009-04-30 | Sharp Corp | ヒートスプレッダ、半導体装置、電子機器、ヒートスプレッダの製造方法、及び半導体装置の製造方法 |
JP4989552B2 (ja) * | 2008-05-08 | 2012-08-01 | トヨタ自動車株式会社 | 電子部品 |
JP5124396B2 (ja) * | 2008-09-01 | 2013-01-23 | 新電元工業株式会社 | 放熱基板ユニット |
JP5282075B2 (ja) | 2010-08-25 | 2013-09-04 | 株式会社豊田自動織機 | 放熱装置 |
JP5577221B2 (ja) * | 2010-11-11 | 2014-08-20 | 新電元工業株式会社 | リードフレーム及び半導体装置 |
JP5691475B2 (ja) * | 2010-12-15 | 2015-04-01 | 富士電機株式会社 | 半導体装置およびその製造方法 |
JP5884291B2 (ja) | 2011-04-20 | 2016-03-15 | 三菱マテリアル株式会社 | ヒートシンク付パワーモジュール用基板ユニット |
JP5869890B2 (ja) | 2011-07-29 | 2016-02-24 | 株式会社神戸製鋼所 | 放熱板、及び放熱板の製法 |
JP2013115338A (ja) | 2011-11-30 | 2013-06-10 | Sumitomo Wiring Syst Ltd | ダイオードの取付構造 |
JP2013123016A (ja) * | 2011-12-12 | 2013-06-20 | Denso Corp | 半導体装置 |
JP6019706B2 (ja) * | 2012-04-24 | 2016-11-02 | ダイキン工業株式会社 | パワーモジュール |
-
2014
- 2014-11-26 WO PCT/JP2014/081268 patent/WO2015080161A1/ja active Application Filing
- 2014-11-26 MY MYPI2016701892A patent/MY179461A/en unknown
- 2014-11-26 DE DE112014006336.3T patent/DE112014006336T5/de not_active Withdrawn
- 2014-11-26 KR KR1020167013805A patent/KR101922783B1/ko active IP Right Grant
- 2014-11-26 CN CN201480065043.6A patent/CN105814681B/zh active Active
- 2014-11-28 TW TW103141402A patent/TWI668808B/zh active
- 2014-11-28 JP JP2014241659A patent/JP6371204B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
JP2015128154A (ja) | 2015-07-09 |
KR101922783B1 (ko) | 2018-11-27 |
CN105814681B (zh) | 2020-01-10 |
TW201528442A (zh) | 2015-07-16 |
JP6371204B2 (ja) | 2018-08-08 |
TWI668808B (zh) | 2019-08-11 |
WO2015080161A1 (ja) | 2015-06-04 |
KR20160075713A (ko) | 2016-06-29 |
DE112014006336T5 (de) | 2016-10-20 |
CN105814681A (zh) | 2016-07-27 |
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