MY179461A - Base plate, and semiconductor device provided with base plate - Google Patents
Base plate, and semiconductor device provided with base plateInfo
- Publication number
- MY179461A MY179461A MYPI2016701892A MYPI2016701892A MY179461A MY 179461 A MY179461 A MY 179461A MY PI2016701892 A MYPI2016701892 A MY PI2016701892A MY PI2016701892 A MYPI2016701892 A MY PI2016701892A MY 179461 A MY179461 A MY 179461A
- Authority
- MY
- Malaysia
- Prior art keywords
- base plate
- joined
- semiconductor device
- concave
- device provided
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
- B23K1/0016—Brazing of electronic components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
- H01L23/4334—Auxiliary members in encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
- H01L2224/26152—Auxiliary members for layer connectors, e.g. spacers being formed on an item to be connected not being a semiconductor or solid-state body
- H01L2224/26175—Flow barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83385—Shape, e.g. interlocking features
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
A base plate (1, 1A to 1E, 11, 11A to 11E, 41, 51) in which a member to be joined (W) is joined to one mounting surface via a joining material (S), wherein the joining position of the mounting surface, to which the member to be joined (W) is joined, is provided with a concave for joining the member to be joined (W) via the joining material (S). The concave is configured so that the area of the opening thereof is greater than the member to be joined (W), and the depression at the outer circumferential part of the concave, which faces the outer circumferential edge of the member to be joined (W), is deeper than the depression at the central part of the concave.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013248233 | 2013-11-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
MY179461A true MY179461A (en) | 2020-11-06 |
Family
ID=53199100
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MYPI2016701892A MY179461A (en) | 2013-11-29 | 2014-11-26 | Base plate, and semiconductor device provided with base plate |
Country Status (7)
Country | Link |
---|---|
JP (1) | JP6371204B2 (en) |
KR (1) | KR101922783B1 (en) |
CN (1) | CN105814681B (en) |
DE (1) | DE112014006336T5 (en) |
MY (1) | MY179461A (en) |
TW (1) | TWI668808B (en) |
WO (1) | WO2015080161A1 (en) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6572732B2 (en) * | 2015-10-27 | 2019-09-11 | 三菱マテリアル株式会社 | Power module |
CN107431050B (en) * | 2016-01-06 | 2019-12-13 | 新电元工业株式会社 | mounting table for semiconductor device and in-vehicle apparatus |
JP6761592B2 (en) * | 2016-03-31 | 2020-09-30 | 大日本印刷株式会社 | Electronic devices and their manufacturing methods |
JP6610590B2 (en) * | 2017-03-21 | 2019-11-27 | トヨタ自動車株式会社 | Semiconductor device and manufacturing method thereof |
JP6930189B2 (en) * | 2017-04-11 | 2021-09-01 | 富士電機株式会社 | Module manufacturing method, solder, and module |
JP6890496B2 (en) * | 2017-07-27 | 2021-06-18 | 京セラ株式会社 | Manufacturing method of electronic component mounting board, electronic device and electronic component mounting board |
CN113922205B (en) * | 2018-01-05 | 2023-02-14 | 深圳市绎立锐光科技开发有限公司 | Substrate, method for forming packaging structure by using substrate and packaging structure |
JP7005373B2 (en) | 2018-02-09 | 2022-01-21 | 三菱電機株式会社 | Power module and power converter |
JP6933592B2 (en) * | 2018-02-23 | 2021-09-08 | 日立Astemo株式会社 | Igniter |
JP7074621B2 (en) * | 2018-09-05 | 2022-05-24 | 株式会社東芝 | Semiconductor devices and their manufacturing methods |
JP7237647B2 (en) * | 2019-02-26 | 2023-03-13 | 京セラ株式会社 | Circuit boards and electronic devices |
WO2023223881A1 (en) * | 2022-05-18 | 2023-11-23 | ローム株式会社 | Electronic device |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0637122A (en) * | 1992-07-15 | 1994-02-10 | Hitachi Ltd | Semiconductor device |
JPH0758273A (en) * | 1993-08-16 | 1995-03-03 | Sony Corp | Lead frame and semiconductor device using same |
JPH10189845A (en) * | 1996-12-25 | 1998-07-21 | Denso Corp | Heat sink for semiconductor device |
KR20040093384A (en) * | 2002-02-28 | 2004-11-05 | 로무 가부시키가이샤 | Light emitting diode lamp |
JP3913090B2 (en) * | 2002-02-28 | 2007-05-09 | ローム株式会社 | Light emitting diode lamp |
JP2006140402A (en) * | 2004-11-15 | 2006-06-01 | Toshiba Corp | Semiconductor integrated circuit device |
JP4904767B2 (en) * | 2005-10-17 | 2012-03-28 | 富士電機株式会社 | Semiconductor device |
KR100752011B1 (en) * | 2006-04-12 | 2007-08-28 | 삼성전기주식회사 | A package strip format and its array |
JP2009070907A (en) * | 2007-09-11 | 2009-04-02 | Toyota Motor Corp | Semiconductor device |
JP2009094157A (en) * | 2007-10-04 | 2009-04-30 | Sharp Corp | Heat spreader, semiconductor apparatus, electronic equipment, manufacturing method of heat spreader, and manufacturing method of semiconductor device |
JP4989552B2 (en) * | 2008-05-08 | 2012-08-01 | トヨタ自動車株式会社 | Electronic components |
JP5124396B2 (en) * | 2008-09-01 | 2013-01-23 | 新電元工業株式会社 | Heat dissipation board unit |
JP5282075B2 (en) | 2010-08-25 | 2013-09-04 | 株式会社豊田自動織機 | Heat dissipation device |
JP5577221B2 (en) * | 2010-11-11 | 2014-08-20 | 新電元工業株式会社 | Lead frame and semiconductor device |
JP5691475B2 (en) * | 2010-12-15 | 2015-04-01 | 富士電機株式会社 | Semiconductor device and manufacturing method thereof |
JP5884291B2 (en) | 2011-04-20 | 2016-03-15 | 三菱マテリアル株式会社 | Power module board unit with heat sink |
JP5869890B2 (en) | 2011-07-29 | 2016-02-24 | 株式会社神戸製鋼所 | Heat sink and manufacturing method of heat sink |
JP2013115338A (en) | 2011-11-30 | 2013-06-10 | Sumitomo Wiring Syst Ltd | Fitting structure for diode |
JP2013123016A (en) * | 2011-12-12 | 2013-06-20 | Denso Corp | Semiconductor device |
JP6019706B2 (en) * | 2012-04-24 | 2016-11-02 | ダイキン工業株式会社 | Power module |
-
2014
- 2014-11-26 KR KR1020167013805A patent/KR101922783B1/en active IP Right Grant
- 2014-11-26 WO PCT/JP2014/081268 patent/WO2015080161A1/en active Application Filing
- 2014-11-26 MY MYPI2016701892A patent/MY179461A/en unknown
- 2014-11-26 CN CN201480065043.6A patent/CN105814681B/en active Active
- 2014-11-26 DE DE112014006336.3T patent/DE112014006336T5/en not_active Withdrawn
- 2014-11-28 TW TW103141402A patent/TWI668808B/en active
- 2014-11-28 JP JP2014241659A patent/JP6371204B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
KR20160075713A (en) | 2016-06-29 |
CN105814681B (en) | 2020-01-10 |
WO2015080161A1 (en) | 2015-06-04 |
CN105814681A (en) | 2016-07-27 |
KR101922783B1 (en) | 2018-11-27 |
JP6371204B2 (en) | 2018-08-08 |
JP2015128154A (en) | 2015-07-09 |
TWI668808B (en) | 2019-08-11 |
TW201528442A (en) | 2015-07-16 |
DE112014006336T5 (en) | 2016-10-20 |
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