MY174290A - Methods of forming layers - Google Patents

Methods of forming layers

Info

Publication number
MY174290A
MY174290A MYPI2014702116A MYPI2014702116A MY174290A MY 174290 A MY174290 A MY 174290A MY PI2014702116 A MYPI2014702116 A MY PI2014702116A MY PI2014702116 A MYPI2014702116 A MY PI2014702116A MY 174290 A MY174290 A MY 174290A
Authority
MY
Malaysia
Prior art keywords
substrate
mcis
methods
forming layers
layer
Prior art date
Application number
MYPI2014702116A
Other languages
English (en)
Inventor
Philip George Pitcher
Original Assignee
Seagate Technology Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seagate Technology Llc filed Critical Seagate Technology Llc
Publication of MY174290A publication Critical patent/MY174290A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02115—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0605—Carbon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
MYPI2014702116A 2012-02-03 2013-02-01 Methods of forming layers MY174290A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201261594547P 2012-02-03 2012-02-03

Publications (1)

Publication Number Publication Date
MY174290A true MY174290A (en) 2020-04-02

Family

ID=47790495

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2014702116A MY174290A (en) 2012-02-03 2013-02-01 Methods of forming layers

Country Status (8)

Country Link
US (1) US9275833B2 (enExample)
EP (1) EP2810298A1 (enExample)
JP (1) JP2015517020A (enExample)
KR (1) KR101701731B1 (enExample)
CN (1) CN104303265B (enExample)
MY (1) MY174290A (enExample)
TW (1) TWI516621B (enExample)
WO (1) WO2013116595A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130164454A1 (en) * 2011-04-07 2013-06-27 Seagate Technology Llc Methods of forming layers
WO2013116595A1 (en) 2012-02-03 2013-08-08 Seagate Technology Llc Methods of forming layers
US9280989B2 (en) 2013-06-21 2016-03-08 Seagate Technology Llc Magnetic devices including near field transducer

Family Cites Families (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4898774A (en) 1986-04-03 1990-02-06 Komag, Inc. Corrosion and wear resistant magnetic disk
JPS63206387A (ja) * 1987-02-19 1988-08-25 Nissin Electric Co Ltd ダイヤモンド薄膜の作製方法
US4822466A (en) 1987-06-25 1989-04-18 University Of Houston - University Park Chemically bonded diamond films and method for producing same
US5113074A (en) 1991-01-29 1992-05-12 Eaton Corporation Ion beam potential detection probe
US5379712A (en) 1991-08-20 1995-01-10 Implant Sciences Corporation Method of epitaxially growing thin films using ion implantation
US5370855A (en) 1991-11-25 1994-12-06 Gruen; Dieter M. Conversion of fullerenes to diamond
DE4200235C1 (enExample) * 1992-01-08 1993-05-06 Hoffmeister, Helmut, Dr., 4400 Muenster, De
US5327475A (en) * 1992-08-18 1994-07-05 Ruxam, Inc. Soft x-ray submicron lithography using multiply charged ions
FR2718568B1 (fr) * 1994-04-06 1996-07-05 France Telecom Procédé d'implantation haute énergie à partir d'un implanteur de type faible ou moyen courant et dispositifs correspondants.
JP3318154B2 (ja) * 1995-06-07 2002-08-26 株式会社日立製作所 荷電粒子ビーム投射方法およびその装置
US5785825A (en) * 1995-07-20 1998-07-28 Seagate Technology, Inc. Multi-phase overcoats for magnetic discs
ATE296482T1 (de) 1996-05-31 2005-06-15 Akashic Memories Corp Hochtetraedrische amorphe kohlenstofffilme sowie verfahren und ionenstrahlquelle zur herstellung derselben
US5693939A (en) * 1996-07-03 1997-12-02 Purser; Kenneth H. MeV neutral beam ion implanter
JP3819566B2 (ja) * 1997-10-28 2006-09-13 日本放送協会 ダイヤモンド膜またはダイヤモンド状炭素膜の成膜方法
US6312766B1 (en) 1998-03-12 2001-11-06 Agere Systems Guardian Corp. Article comprising fluorinated diamond-like carbon and method for fabricating article
US6130436A (en) 1998-06-02 2000-10-10 Varian Semiconductor Equipment Associates, Inc. Acceleration and analysis architecture for ion implanter
US6312798B1 (en) 1998-09-25 2001-11-06 Seagate Technology Llc Magnetic recording medium having a nitrogen-doped hydrogenated carbon protective overcoat
US6303214B1 (en) * 1999-04-14 2001-10-16 Seagate Technology Llc Magnetic recording medium with high density thin dual carbon overcoats
FR2793349B1 (fr) * 1999-05-07 2003-06-27 X Ion Procede de croissance d'une couche d'oxyde de silicium de faible epaisseur sur une surface de substrat de silicium et machine a deux reacteurs de mise en oeuvre
US6632483B1 (en) 2000-06-30 2003-10-14 International Business Machines Corporation Ion gun deposition and alignment for liquid-crystal applications
US6589676B1 (en) 2000-07-25 2003-07-08 Seagate Technology Llc Corrosion resistant magnetic thin film media
US20030054133A1 (en) 2000-08-07 2003-03-20 Wadley Hadyn N.G. Apparatus and method for intra-layer modulation of the material deposition and assist beam and the multilayer structure produced therefrom
US6641932B1 (en) 2000-09-05 2003-11-04 Seagate Technology, Llc Magnetic thin film media with chromium capping layer
US6902773B1 (en) * 2000-11-21 2005-06-07 Hitachi Global Storage Technologies Netherlands, B.V. Energy gradient ion beam deposition of carbon overcoats on rigid disk media for magnetic recordings
US7064491B2 (en) 2000-11-30 2006-06-20 Semequip, Inc. Ion implantation system and control method
JP2002235168A (ja) * 2001-02-08 2002-08-23 Sumitomo Electric Ind Ltd 成膜方法および成膜装置
JP3912993B2 (ja) 2001-03-26 2007-05-09 株式会社荏原製作所 中性粒子ビーム処理装置
JP2003042930A (ja) 2001-08-03 2003-02-13 Pioneer Electronic Corp 近接場光発生素子及びこれを具備してなる光学装置
JP4184668B2 (ja) 2002-01-10 2008-11-19 富士通株式会社 Ｃｐｐ構造磁気抵抗効果素子
JP2006500741A (ja) 2002-09-23 2006-01-05 エピオン コーポレーション ガスクラスタイオンビーム処理システム及び方法
JP4560712B2 (ja) * 2003-07-18 2010-10-13 イーエムエス ナノファブリカツィオン アーゲー 超高および超低運動イオン・エネルギーによるターゲットのイオン照射
JP4092280B2 (ja) * 2003-10-23 2008-05-28 株式会社東芝 荷電ビーム装置および荷電粒子検出方法
US7902527B2 (en) 2004-05-18 2011-03-08 Jiong Chen Apparatus and methods for ion beam implantation using ribbon and spot beams
US7067807B2 (en) 2004-09-08 2006-06-27 Applied Materials, Israel, Ltd. Charged particle beam column and method of its operation
US7868305B2 (en) 2005-03-16 2011-01-11 Varian Semiconductor Equipment Associates, Inc. Technique for ion beam angle spread control
WO2007145849A2 (en) 2006-06-12 2007-12-21 Axcelis Technologies, Inc. Beam angle adjustment in ion implanters
US7476855B2 (en) 2006-09-19 2009-01-13 Axcelis Technologies, Inc. Beam tuning with automatic magnet pole rotation for ion implanters
JP4597933B2 (ja) 2006-09-21 2010-12-15 昭和電工株式会社 磁気記録媒体の製造方法、並びに磁気記録再生装置
JP5278887B2 (ja) 2006-11-20 2013-09-04 セイコーインスツル株式会社 近接場光ヘッド及び情報記録再生装置
US7544958B2 (en) * 2007-03-23 2009-06-09 Varian Semiconductor Equipment Associates, Inc. Contamination reduction during ion implantation
US20080305598A1 (en) 2007-06-07 2008-12-11 Horsky Thomas N Ion implantation device and a method of semiconductor manufacturing by the implantation of ions derived from carborane molecular species
US8248891B2 (en) 2008-11-18 2012-08-21 Seagate Technology Llc Near-field transducers for focusing light
KR100927995B1 (ko) * 2008-11-20 2009-11-24 한국기초과학지원연구원 전자 맴돌이 공명 이온원 장치 및 그의 제조방법
US7965464B2 (en) 2008-11-20 2011-06-21 Seagate Technology Llc Heat-assisted magnetic recording with shaped magnetic and thermal fields
US20100190036A1 (en) 2009-01-27 2010-07-29 Kyriakos Komvopoulos Systems and Methods for Surface Modification by Filtered Cathodic Vacuum Arc
US8455060B2 (en) * 2009-02-19 2013-06-04 Tel Epion Inc. Method for depositing hydrogenated diamond-like carbon films using a gas cluster ion beam
US7998607B2 (en) 2009-07-31 2011-08-16 Hitachi Global Storage Technologies Netherlands, B.V. Partially-oxidized cap layer for hard disk drive magnetic media
US8325567B2 (en) 2009-09-10 2012-12-04 Tdk Corporation Thermally-assisted magnetic recording head comprising near-field light generator
US8339740B2 (en) 2010-02-23 2012-12-25 Seagate Technology Llc Recording head for heat assisted magnetic recording with diffusion barrier surrounding a near field transducer
US8427925B2 (en) 2010-02-23 2013-04-23 Seagate Technology Llc HAMR NFT materials with improved thermal stability
US8375565B2 (en) 2010-05-28 2013-02-19 Western Digital (Fremont), Llc Method for providing an electronic lapping guide corresponding to a near-field transducer of an energy assisted magnetic recording transducer
US8351307B1 (en) 2010-06-04 2013-01-08 Western Digital (Fremont), Llc Trailing edge optimized near field transducer having non-rectangular pin cross section
US8077559B1 (en) 2010-06-25 2011-12-13 Tdk Corporation Thermally-assisted magnetic recording head including plasmon generator
US8351151B2 (en) 2010-11-02 2013-01-08 Hitachi Global Storage Technologies Netherlands B.V. Thermally assisted magnetic write head employing a near field transducer (NFT) having a diffusion barrier layer between the near field transducer and a magnetic lip
WO2013116595A1 (en) 2012-02-03 2013-08-08 Seagate Technology Llc Methods of forming layers
JP2015517170A (ja) * 2012-02-03 2015-06-18 シーゲイト テクノロジー エルエルシー 層を形成する方法
US9288889B2 (en) 2013-03-13 2016-03-15 Varian Semiconductor Equipment Associates, Inc. Apparatus and techniques for energetic neutral beam processing
US20150064365A1 (en) 2013-08-29 2015-03-05 Seagate Technology Llc Methods of forming films

Also Published As

Publication number Publication date
CN104303265A (zh) 2015-01-21
EP2810298A1 (en) 2014-12-10
KR101701731B1 (ko) 2017-02-02
TWI516621B (zh) 2016-01-11
US20130200280A1 (en) 2013-08-08
TW201348475A (zh) 2013-12-01
KR20140145123A (ko) 2014-12-22
US9275833B2 (en) 2016-03-01
WO2013116595A1 (en) 2013-08-08
CN104303265B (zh) 2018-08-14
JP2015517020A (ja) 2015-06-18

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