JP2015517170A5 - - Google Patents

Download PDF

Info

Publication number
JP2015517170A5
JP2015517170A5 JP2014555732A JP2014555732A JP2015517170A5 JP 2015517170 A5 JP2015517170 A5 JP 2015517170A5 JP 2014555732 A JP2014555732 A JP 2014555732A JP 2014555732 A JP2014555732 A JP 2014555732A JP 2015517170 A5 JP2015517170 A5 JP 2015517170A5
Authority
JP
Japan
Prior art keywords
particle beam
precursor
precursor ion
substrate
ion beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2014555732A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015517170A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2013/024267 external-priority patent/WO2013116594A1/en
Publication of JP2015517170A publication Critical patent/JP2015517170A/ja
Publication of JP2015517170A5 publication Critical patent/JP2015517170A5/ja
Pending legal-status Critical Current

Links

JP2014555732A 2012-02-03 2013-02-01 層を形成する方法 Pending JP2015517170A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261594542P 2012-02-03 2012-02-03
US61/594,542 2012-02-03
PCT/US2013/024267 WO2013116594A1 (en) 2012-02-03 2013-02-01 Methods of forming layers

Publications (2)

Publication Number Publication Date
JP2015517170A JP2015517170A (ja) 2015-06-18
JP2015517170A5 true JP2015517170A5 (enExample) 2015-12-03

Family

ID=47720760

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014555732A Pending JP2015517170A (ja) 2012-02-03 2013-02-01 層を形成する方法

Country Status (7)

Country Link
US (2) US20130202809A1 (enExample)
EP (1) EP2809820A1 (enExample)
JP (1) JP2015517170A (enExample)
KR (1) KR101663063B1 (enExample)
CN (1) CN104321459B (enExample)
TW (1) TWI503860B (enExample)
WO (1) WO2013116594A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130164454A1 (en) * 2011-04-07 2013-06-27 Seagate Technology Llc Methods of forming layers
WO2013116595A1 (en) * 2012-02-03 2013-08-08 Seagate Technology Llc Methods of forming layers
US20140106550A1 (en) * 2012-10-11 2014-04-17 International Business Machines Corporation Ion implantation tuning to achieve simultaneous multiple implant energies
US9280989B2 (en) 2013-06-21 2016-03-08 Seagate Technology Llc Magnetic devices including near field transducer
CN109576664B (zh) * 2017-09-28 2020-08-28 中国电子科技集团公司第四十八研究所 一种三栅组件及含有该三栅组件的离子源
WO2022108526A1 (en) * 2020-11-17 2022-05-27 Nanyang Technological University Apparatus and method for forming an overcoat
US11804361B2 (en) * 2021-05-18 2023-10-31 Nuflare Technology, Inc. Charged particle beam writing method, charged particle beam writing apparatus, and computer-readable recording medium

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3676672A (en) * 1969-02-03 1972-07-11 Benjamin B Meckel Large diameter ion beam apparatus with an apertured plate electrode to maintain uniform flux density across the beam
US4775789A (en) * 1986-03-19 1988-10-04 Albridge Jr Royal G Method and apparatus for producing neutral atomic and molecular beams
US5113074A (en) * 1991-01-29 1992-05-12 Eaton Corporation Ion beam potential detection probe
JPH05326452A (ja) * 1991-06-10 1993-12-10 Kawasaki Steel Corp プラズマ処理装置及び方法
JP3328498B2 (ja) * 1996-02-16 2002-09-24 株式会社荏原製作所 高速原子線源
US6090456A (en) * 1997-05-03 2000-07-18 The United States Of America As Represented By The Secretary Of The Air Force Process for large area deposition of diamond-like carbon films
US6060715A (en) * 1997-10-31 2000-05-09 Applied Materials, Inc. Method and apparatus for ion beam scanning in an ion implanter
US6312798B1 (en) * 1998-09-25 2001-11-06 Seagate Technology Llc Magnetic recording medium having a nitrogen-doped hydrogenated carbon protective overcoat
JP3912993B2 (ja) * 2001-03-26 2007-05-09 株式会社荏原製作所 中性粒子ビーム処理装置
JP4073174B2 (ja) * 2001-03-26 2008-04-09 株式会社荏原製作所 中性粒子ビーム処理装置
CN1459515A (zh) * 2002-05-21 2003-12-03 雷卫武 多离子束共溅射淀积纳米膜装置
JP2005260040A (ja) * 2004-02-12 2005-09-22 Sony Corp ドーピング方法、半導体装置の製造方法および電子応用装置の製造方法
JP2008050670A (ja) * 2006-08-25 2008-03-06 Okuma Engineering:Kk 炭素系膜の形成装置および形成方法
KR100919763B1 (ko) * 2008-02-11 2009-10-07 성균관대학교산학협력단 중성빔을 이용한 기판 표면의 조성 혼입 장치 및 방법
CN101901734B (zh) * 2010-04-07 2012-07-18 胡新平 多模式离子注入机系统及注入调节方法
EP2608872B1 (en) * 2010-08-23 2019-07-31 Exogenesis Corporation Method and apparatus for neutral beam processing based on gas cluster ion beam technology

Similar Documents

Publication Publication Date Title
JP2015517170A5 (enExample)
JP2010130013A5 (enExample)
WO2013028861A8 (en) Ion beam processing of sic for fabrication of graphene structures
WO2019099171A3 (en) Fabrication methods
JP2014205902A5 (ja) 金属酸化物膜
JP2014208899A5 (enExample)
WO2016100303A3 (en) Photolithography based fabrication of 3d structures
WO2015043769A8 (en) Charged particle beam system and method of operating the same
WO2013168634A8 (ja) 転写方法及び熱ナノインプリント装置
JP2013160637A5 (enExample)
JP2017125837A5 (enExample)
JP2015518628A5 (ja) イオン注入装置、およびイオン注入装置の動作方法
JP2014055349A5 (ja) 金属酸化物膜
JP2013138189A5 (ja) 半導体装置の作製方法
PH12018550065A1 (en) Selective particles transfer from one device to another
WO2013132024A3 (en) Method of producing a fresnel zone plate for applications in high energy radiation
MX2016005564A (es) Capa de carrera contra oxidacion.
JP2012517690A5 (enExample)
JP2012190789A5 (ja) 絶縁パターンの形成方法
WO2012097268A3 (en) Nanoparticle deposition systems
WO2017048259A8 (en) Methods for doping a sub-fin region of a semiconductor fin structure and devices containing the same
JP2011251317A5 (enExample)
WO2015090991A3 (de) Verfahren zur herstellung strukturierter metallischer beschichtungen
WO2008132734A3 (en) Focused ion beam deep nano- patterning method
WO2013002517A3 (ko) 무기반도체 감응형 광전소자 및 그 제조방법