KR101663063B1 - 층들을 형성하는 방법들 - Google Patents

층들을 형성하는 방법들 Download PDF

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Publication number
KR101663063B1
KR101663063B1 KR1020147024663A KR20147024663A KR101663063B1 KR 101663063 B1 KR101663063 B1 KR 101663063B1 KR 1020147024663 A KR1020147024663 A KR 1020147024663A KR 20147024663 A KR20147024663 A KR 20147024663A KR 101663063 B1 KR101663063 B1 KR 101663063B1
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KR
South Korea
Prior art keywords
substrate
particle beam
ions
precursor
neutral
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KR1020147024663A
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English (en)
Korean (ko)
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KR20140145122A (ko
Inventor
필립 조지 피쳐
Original Assignee
시게이트 테크놀로지 엘엘씨
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Publication of KR20140145122A publication Critical patent/KR20140145122A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0605—Carbon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/221—Ion beam deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3178—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for applying thin layers on objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31732—Depositing thin layers on selected microareas

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
KR1020147024663A 2012-02-03 2013-02-01 층들을 형성하는 방법들 Expired - Fee Related KR101663063B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261594542P 2012-02-03 2012-02-03
US61/594,542 2012-02-03
PCT/US2013/024267 WO2013116594A1 (en) 2012-02-03 2013-02-01 Methods of forming layers

Publications (2)

Publication Number Publication Date
KR20140145122A KR20140145122A (ko) 2014-12-22
KR101663063B1 true KR101663063B1 (ko) 2016-10-14

Family

ID=47720760

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020147024663A Expired - Fee Related KR101663063B1 (ko) 2012-02-03 2013-02-01 층들을 형성하는 방법들

Country Status (7)

Country Link
US (2) US20130202809A1 (enExample)
EP (1) EP2809820A1 (enExample)
JP (1) JP2015517170A (enExample)
KR (1) KR101663063B1 (enExample)
CN (1) CN104321459B (enExample)
TW (1) TWI503860B (enExample)
WO (1) WO2013116594A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130164454A1 (en) * 2011-04-07 2013-06-27 Seagate Technology Llc Methods of forming layers
CN104303265B (zh) * 2012-02-03 2018-08-14 希捷科技有限公司 形成层的方法
US20140106550A1 (en) * 2012-10-11 2014-04-17 International Business Machines Corporation Ion implantation tuning to achieve simultaneous multiple implant energies
US9280989B2 (en) 2013-06-21 2016-03-08 Seagate Technology Llc Magnetic devices including near field transducer
CN109576664B (zh) * 2017-09-28 2020-08-28 中国电子科技集团公司第四十八研究所 一种三栅组件及含有该三栅组件的离子源
US12198741B2 (en) * 2020-11-17 2025-01-14 Nanyang Technological University Apparatus and method for forming an overcoat
US11804361B2 (en) * 2021-05-18 2023-10-31 Nuflare Technology, Inc. Charged particle beam writing method, charged particle beam writing apparatus, and computer-readable recording medium

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6090456A (en) * 1997-05-03 2000-07-18 The United States Of America As Represented By The Secretary Of The Air Force Process for large area deposition of diamond-like carbon films

Family Cites Families (15)

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Publication number Priority date Publication date Assignee Title
US3676672A (en) * 1969-02-03 1972-07-11 Benjamin B Meckel Large diameter ion beam apparatus with an apertured plate electrode to maintain uniform flux density across the beam
US4775789A (en) * 1986-03-19 1988-10-04 Albridge Jr Royal G Method and apparatus for producing neutral atomic and molecular beams
US5113074A (en) * 1991-01-29 1992-05-12 Eaton Corporation Ion beam potential detection probe
JPH05326452A (ja) * 1991-06-10 1993-12-10 Kawasaki Steel Corp プラズマ処理装置及び方法
JP3328498B2 (ja) * 1996-02-16 2002-09-24 株式会社荏原製作所 高速原子線源
US6060715A (en) * 1997-10-31 2000-05-09 Applied Materials, Inc. Method and apparatus for ion beam scanning in an ion implanter
US6312798B1 (en) * 1998-09-25 2001-11-06 Seagate Technology Llc Magnetic recording medium having a nitrogen-doped hydrogenated carbon protective overcoat
JP3912993B2 (ja) * 2001-03-26 2007-05-09 株式会社荏原製作所 中性粒子ビーム処理装置
JP4073174B2 (ja) * 2001-03-26 2008-04-09 株式会社荏原製作所 中性粒子ビーム処理装置
CN1459515A (zh) * 2002-05-21 2003-12-03 雷卫武 多离子束共溅射淀积纳米膜装置
JP2005260040A (ja) * 2004-02-12 2005-09-22 Sony Corp ドーピング方法、半導体装置の製造方法および電子応用装置の製造方法
JP2008050670A (ja) * 2006-08-25 2008-03-06 Okuma Engineering:Kk 炭素系膜の形成装置および形成方法
KR100919763B1 (ko) * 2008-02-11 2009-10-07 성균관대학교산학협력단 중성빔을 이용한 기판 표면의 조성 혼입 장치 및 방법
CN101901734B (zh) * 2010-04-07 2012-07-18 胡新平 多模式离子注入机系统及注入调节方法
RU2579749C2 (ru) * 2010-08-23 2016-04-10 Эксодженезис Корпорейшн Способ и устройство обработки нейтральным пучком, основанные на технологии пучка газовых кластерных ионов

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6090456A (en) * 1997-05-03 2000-07-18 The United States Of America As Represented By The Secretary Of The Air Force Process for large area deposition of diamond-like carbon films

Also Published As

Publication number Publication date
CN104321459B (zh) 2018-04-13
EP2809820A1 (en) 2014-12-10
KR20140145122A (ko) 2014-12-22
TWI503860B (zh) 2015-10-11
CN104321459A (zh) 2015-01-28
WO2013116594A1 (en) 2013-08-08
JP2015517170A (ja) 2015-06-18
US20130202809A1 (en) 2013-08-08
TW201401328A (zh) 2014-01-01
US20150348753A1 (en) 2015-12-03

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