JP2015517170A - 層を形成する方法 - Google Patents

層を形成する方法 Download PDF

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Publication number
JP2015517170A
JP2015517170A JP2014555732A JP2014555732A JP2015517170A JP 2015517170 A JP2015517170 A JP 2015517170A JP 2014555732 A JP2014555732 A JP 2014555732A JP 2014555732 A JP2014555732 A JP 2014555732A JP 2015517170 A JP2015517170 A JP 2015517170A
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JP
Japan
Prior art keywords
substrate
precursor
particle beam
ions
neutral
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2014555732A
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English (en)
Japanese (ja)
Other versions
JP2015517170A5 (enExample
Inventor
ピッチャー，フィリップ・ジョージ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seagate Technology LLC
Original Assignee
Seagate Technology LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seagate Technology LLC filed Critical Seagate Technology LLC
Publication of JP2015517170A publication Critical patent/JP2015517170A/ja
Publication of JP2015517170A5 publication Critical patent/JP2015517170A5/ja
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0605—Carbon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/221—Ion beam deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3178—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for applying thin layers on objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31732—Depositing thin layers on selected microareas

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
JP2014555732A 2012-02-03 2013-02-01 層を形成する方法 Pending JP2015517170A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261594542P 2012-02-03 2012-02-03
US61/594,542 2012-02-03
PCT/US2013/024267 WO2013116594A1 (en) 2012-02-03 2013-02-01 Methods of forming layers

Publications (2)

Publication Number Publication Date
JP2015517170A true JP2015517170A (ja) 2015-06-18
JP2015517170A5 JP2015517170A5 (enExample) 2015-12-03

Family

ID=47720760

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014555732A Pending JP2015517170A (ja) 2012-02-03 2013-02-01 層を形成する方法

Country Status (7)

Country Link
US (2) US20130202809A1 (enExample)
EP (1) EP2809820A1 (enExample)
JP (1) JP2015517170A (enExample)
KR (1) KR101663063B1 (enExample)
CN (1) CN104321459B (enExample)
TW (1) TWI503860B (enExample)
WO (1) WO2013116594A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130164454A1 (en) * 2011-04-07 2013-06-27 Seagate Technology Llc Methods of forming layers
WO2013116595A1 (en) * 2012-02-03 2013-08-08 Seagate Technology Llc Methods of forming layers
US20140106550A1 (en) * 2012-10-11 2014-04-17 International Business Machines Corporation Ion implantation tuning to achieve simultaneous multiple implant energies
US9280989B2 (en) 2013-06-21 2016-03-08 Seagate Technology Llc Magnetic devices including near field transducer
CN109576664B (zh) * 2017-09-28 2020-08-28 中国电子科技集团公司第四十八研究所 一种三栅组件及含有该三栅组件的离子源
WO2022108526A1 (en) * 2020-11-17 2022-05-27 Nanyang Technological University Apparatus and method for forming an overcoat
US11804361B2 (en) * 2021-05-18 2023-10-31 Nuflare Technology, Inc. Charged particle beam writing method, charged particle beam writing apparatus, and computer-readable recording medium

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62229100A (ja) * 1986-03-19 1987-10-07 マ−チン・マリエツタ・コ−ポレ−シヨン 中性の原子および分子ビ−ムの発生方法と装置
US6090456A (en) * 1997-05-03 2000-07-18 The United States Of America As Represented By The Secretary Of The Air Force Process for large area deposition of diamond-like carbon films
JP2002289583A (ja) * 2001-03-26 2002-10-04 Ebara Corp ビーム処理装置
JP2008050670A (ja) * 2006-08-25 2008-03-06 Okuma Engineering:Kk 炭素系膜の形成装置および形成方法

Family Cites Families (12)

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Publication number Priority date Publication date Assignee Title
US3676672A (en) * 1969-02-03 1972-07-11 Benjamin B Meckel Large diameter ion beam apparatus with an apertured plate electrode to maintain uniform flux density across the beam
US5113074A (en) * 1991-01-29 1992-05-12 Eaton Corporation Ion beam potential detection probe
JPH05326452A (ja) * 1991-06-10 1993-12-10 Kawasaki Steel Corp プラズマ処理装置及び方法
JP3328498B2 (ja) * 1996-02-16 2002-09-24 株式会社荏原製作所 高速原子線源
US6060715A (en) * 1997-10-31 2000-05-09 Applied Materials, Inc. Method and apparatus for ion beam scanning in an ion implanter
US6312798B1 (en) * 1998-09-25 2001-11-06 Seagate Technology Llc Magnetic recording medium having a nitrogen-doped hydrogenated carbon protective overcoat
JP3912993B2 (ja) * 2001-03-26 2007-05-09 株式会社荏原製作所 中性粒子ビーム処理装置
CN1459515A (zh) * 2002-05-21 2003-12-03 雷卫武 多离子束共溅射淀积纳米膜装置
JP2005260040A (ja) * 2004-02-12 2005-09-22 Sony Corp ドーピング方法、半導体装置の製造方法および電子応用装置の製造方法
KR100919763B1 (ko) * 2008-02-11 2009-10-07 성균관대학교산학협력단 중성빔을 이용한 기판 표면의 조성 혼입 장치 및 방법
CN101901734B (zh) * 2010-04-07 2012-07-18 胡新平 多模式离子注入机系统及注入调节方法
EP2608872B1 (en) * 2010-08-23 2019-07-31 Exogenesis Corporation Method and apparatus for neutral beam processing based on gas cluster ion beam technology

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62229100A (ja) * 1986-03-19 1987-10-07 マ−チン・マリエツタ・コ−ポレ−シヨン 中性の原子および分子ビ−ムの発生方法と装置
US6090456A (en) * 1997-05-03 2000-07-18 The United States Of America As Represented By The Secretary Of The Air Force Process for large area deposition of diamond-like carbon films
JP2002289583A (ja) * 2001-03-26 2002-10-04 Ebara Corp ビーム処理装置
JP2008050670A (ja) * 2006-08-25 2008-03-06 Okuma Engineering:Kk 炭素系膜の形成装置および形成方法

Also Published As

Publication number Publication date
TW201401328A (zh) 2014-01-01
CN104321459B (zh) 2018-04-13
KR20140145122A (ko) 2014-12-22
US20150348753A1 (en) 2015-12-03
TWI503860B (zh) 2015-10-11
WO2013116594A1 (en) 2013-08-08
US20130202809A1 (en) 2013-08-08
EP2809820A1 (en) 2014-12-10
KR101663063B1 (ko) 2016-10-14
CN104321459A (zh) 2015-01-28

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