KR101701731B1 - 층들을 형성하는 방법들 - Google Patents

층들을 형성하는 방법들 Download PDF

Info

Publication number
KR101701731B1
KR101701731B1 KR1020147024665A KR20147024665A KR101701731B1 KR 101701731 B1 KR101701731 B1 KR 101701731B1 KR 1020147024665 A KR1020147024665 A KR 1020147024665A KR 20147024665 A KR20147024665 A KR 20147024665A KR 101701731 B1 KR101701731 B1 KR 101701731B1
Authority
KR
South Korea
Prior art keywords
mcis
substrate
particle beam
layer
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020147024665A
Other languages
English (en)
Korean (ko)
Other versions
KR20140145123A (ko
Inventor
필립 조지 피쳐
Original Assignee
시게이트 테크놀로지 엘엘씨
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 시게이트 테크놀로지 엘엘씨 filed Critical 시게이트 테크놀로지 엘엘씨
Publication of KR20140145123A publication Critical patent/KR20140145123A/ko
Application granted granted Critical
Publication of KR101701731B1 publication Critical patent/KR101701731B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02115—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0605—Carbon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Analytical Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
KR1020147024665A 2012-02-03 2013-02-01 층들을 형성하는 방법들 Expired - Fee Related KR101701731B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261594547P 2012-02-03 2012-02-03
US61/594,547 2012-02-03
PCT/US2013/024269 WO2013116595A1 (en) 2012-02-03 2013-02-01 Methods of forming layers

Publications (2)

Publication Number Publication Date
KR20140145123A KR20140145123A (ko) 2014-12-22
KR101701731B1 true KR101701731B1 (ko) 2017-02-02

Family

ID=47790495

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020147024665A Expired - Fee Related KR101701731B1 (ko) 2012-02-03 2013-02-01 층들을 형성하는 방법들

Country Status (8)

Country Link
US (1) US9275833B2 (enExample)
EP (1) EP2810298A1 (enExample)
JP (1) JP2015517020A (enExample)
KR (1) KR101701731B1 (enExample)
CN (1) CN104303265B (enExample)
MY (1) MY174290A (enExample)
TW (1) TWI516621B (enExample)
WO (1) WO2013116595A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130164454A1 (en) * 2011-04-07 2013-06-27 Seagate Technology Llc Methods of forming layers
CN104303265B (zh) 2012-02-03 2018-08-14 希捷科技有限公司 形成层的方法
US9280989B2 (en) 2013-06-21 2016-03-08 Seagate Technology Llc Magnetic devices including near field transducer

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994021557A1 (en) 1993-03-23 1994-09-29 Gruen Dieter M Conversion of fullerenes to diamond

Family Cites Families (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4898774A (en) * 1986-04-03 1990-02-06 Komag, Inc. Corrosion and wear resistant magnetic disk
JPS63206387A (ja) * 1987-02-19 1988-08-25 Nissin Electric Co Ltd ダイヤモンド薄膜の作製方法
US4822466A (en) 1987-06-25 1989-04-18 University Of Houston - University Park Chemically bonded diamond films and method for producing same
US5113074A (en) 1991-01-29 1992-05-12 Eaton Corporation Ion beam potential detection probe
US5379712A (en) 1991-08-20 1995-01-10 Implant Sciences Corporation Method of epitaxially growing thin films using ion implantation
DE4200235C1 (enExample) * 1992-01-08 1993-05-06 Hoffmeister, Helmut, Dr., 4400 Muenster, De
US5327475A (en) * 1992-08-18 1994-07-05 Ruxam, Inc. Soft x-ray submicron lithography using multiply charged ions
FR2718568B1 (fr) * 1994-04-06 1996-07-05 France Telecom Procédé d'implantation haute énergie à partir d'un implanteur de type faible ou moyen courant et dispositifs correspondants.
JP3318154B2 (ja) * 1995-06-07 2002-08-26 株式会社日立製作所 荷電粒子ビーム投射方法およびその装置
US5785825A (en) * 1995-07-20 1998-07-28 Seagate Technology, Inc. Multi-phase overcoats for magnetic discs
WO1997045834A1 (en) 1996-05-31 1997-12-04 Akashic Memories Corporation Recording media having protective overcoats of highly tetrahedral amorphous carbon and methods for their production
US5693939A (en) * 1996-07-03 1997-12-02 Purser; Kenneth H. MeV neutral beam ion implanter
JP3819566B2 (ja) * 1997-10-28 2006-09-13 日本放送協会 ダイヤモンド膜またはダイヤモンド状炭素膜の成膜方法
US6312766B1 (en) 1998-03-12 2001-11-06 Agere Systems Guardian Corp. Article comprising fluorinated diamond-like carbon and method for fabricating article
US6130436A (en) 1998-06-02 2000-10-10 Varian Semiconductor Equipment Associates, Inc. Acceleration and analysis architecture for ion implanter
US6312798B1 (en) * 1998-09-25 2001-11-06 Seagate Technology Llc Magnetic recording medium having a nitrogen-doped hydrogenated carbon protective overcoat
US6303214B1 (en) * 1999-04-14 2001-10-16 Seagate Technology Llc Magnetic recording medium with high density thin dual carbon overcoats
FR2793349B1 (fr) * 1999-05-07 2003-06-27 X Ion Procede de croissance d'une couche d'oxyde de silicium de faible epaisseur sur une surface de substrat de silicium et machine a deux reacteurs de mise en oeuvre
US6632483B1 (en) 2000-06-30 2003-10-14 International Business Machines Corporation Ion gun deposition and alignment for liquid-crystal applications
US6589676B1 (en) 2000-07-25 2003-07-08 Seagate Technology Llc Corrosion resistant magnetic thin film media
US20030054133A1 (en) 2000-08-07 2003-03-20 Wadley Hadyn N.G. Apparatus and method for intra-layer modulation of the material deposition and assist beam and the multilayer structure produced therefrom
US6641932B1 (en) 2000-09-05 2003-11-04 Seagate Technology, Llc Magnetic thin film media with chromium capping layer
US6902773B1 (en) * 2000-11-21 2005-06-07 Hitachi Global Storage Technologies Netherlands, B.V. Energy gradient ion beam deposition of carbon overcoats on rigid disk media for magnetic recordings
US7064491B2 (en) 2000-11-30 2006-06-20 Semequip, Inc. Ion implantation system and control method
JP2002235168A (ja) * 2001-02-08 2002-08-23 Sumitomo Electric Ind Ltd 成膜方法および成膜装置
JP3912993B2 (ja) 2001-03-26 2007-05-09 株式会社荏原製作所 中性粒子ビーム処理装置
JP2003042930A (ja) 2001-08-03 2003-02-13 Pioneer Electronic Corp 近接場光発生素子及びこれを具備してなる光学装置
JP4184668B2 (ja) 2002-01-10 2008-11-19 富士通株式会社 Ｃｐｐ構造磁気抵抗効果素子
EP1550144A4 (en) 2002-09-23 2009-07-08 Tel Epion Inc ION BEAM BEAM TREATMENT METHOD AND SYSTEM THEREFOR
JP4560712B2 (ja) * 2003-07-18 2010-10-13 イーエムエス ナノファブリカツィオン アーゲー 超高および超低運動イオン・エネルギーによるターゲットのイオン照射
JP4092280B2 (ja) * 2003-10-23 2008-05-28 株式会社東芝 荷電ビーム装置および荷電粒子検出方法
US7902527B2 (en) 2004-05-18 2011-03-08 Jiong Chen Apparatus and methods for ion beam implantation using ribbon and spot beams
US7067807B2 (en) 2004-09-08 2006-06-27 Applied Materials, Israel, Ltd. Charged particle beam column and method of its operation
US7868305B2 (en) 2005-03-16 2011-01-11 Varian Semiconductor Equipment Associates, Inc. Technique for ion beam angle spread control
KR101407692B1 (ko) 2006-06-12 2014-06-17 액셀리스 테크놀러지스, 인크. 이온 주입기 내의 비임 각도 조절
US7476855B2 (en) 2006-09-19 2009-01-13 Axcelis Technologies, Inc. Beam tuning with automatic magnet pole rotation for ion implanters
JP4597933B2 (ja) 2006-09-21 2010-12-15 昭和電工株式会社 磁気記録媒体の製造方法、並びに磁気記録再生装置
JP5278887B2 (ja) 2006-11-20 2013-09-04 セイコーインスツル株式会社 近接場光ヘッド及び情報記録再生装置
US7544958B2 (en) * 2007-03-23 2009-06-09 Varian Semiconductor Equipment Associates, Inc. Contamination reduction during ion implantation
US20080305598A1 (en) 2007-06-07 2008-12-11 Horsky Thomas N Ion implantation device and a method of semiconductor manufacturing by the implantation of ions derived from carborane molecular species
US8248891B2 (en) 2008-11-18 2012-08-21 Seagate Technology Llc Near-field transducers for focusing light
US7965464B2 (en) 2008-11-20 2011-06-21 Seagate Technology Llc Heat-assisted magnetic recording with shaped magnetic and thermal fields
KR100927995B1 (ko) * 2008-11-20 2009-11-24 한국기초과학지원연구원 전자 맴돌이 공명 이온원 장치 및 그의 제조방법
US20100190036A1 (en) 2009-01-27 2010-07-29 Kyriakos Komvopoulos Systems and Methods for Surface Modification by Filtered Cathodic Vacuum Arc
US8455060B2 (en) * 2009-02-19 2013-06-04 Tel Epion Inc. Method for depositing hydrogenated diamond-like carbon films using a gas cluster ion beam
US7998607B2 (en) 2009-07-31 2011-08-16 Hitachi Global Storage Technologies Netherlands, B.V. Partially-oxidized cap layer for hard disk drive magnetic media
US8325567B2 (en) 2009-09-10 2012-12-04 Tdk Corporation Thermally-assisted magnetic recording head comprising near-field light generator
US8339740B2 (en) 2010-02-23 2012-12-25 Seagate Technology Llc Recording head for heat assisted magnetic recording with diffusion barrier surrounding a near field transducer
US8427925B2 (en) 2010-02-23 2013-04-23 Seagate Technology Llc HAMR NFT materials with improved thermal stability
US8375565B2 (en) 2010-05-28 2013-02-19 Western Digital (Fremont), Llc Method for providing an electronic lapping guide corresponding to a near-field transducer of an energy assisted magnetic recording transducer
US8351307B1 (en) 2010-06-04 2013-01-08 Western Digital (Fremont), Llc Trailing edge optimized near field transducer having non-rectangular pin cross section
US8077559B1 (en) 2010-06-25 2011-12-13 Tdk Corporation Thermally-assisted magnetic recording head including plasmon generator
US8351151B2 (en) 2010-11-02 2013-01-08 Hitachi Global Storage Technologies Netherlands B.V. Thermally assisted magnetic write head employing a near field transducer (NFT) having a diffusion barrier layer between the near field transducer and a magnetic lip
CN104303265B (zh) 2012-02-03 2018-08-14 希捷科技有限公司 形成层的方法
KR101663063B1 (ko) * 2012-02-03 2016-10-14 시게이트 테크놀로지 엘엘씨 층들을 형성하는 방법들
US9288889B2 (en) 2013-03-13 2016-03-15 Varian Semiconductor Equipment Associates, Inc. Apparatus and techniques for energetic neutral beam processing
US20150064365A1 (en) 2013-08-29 2015-03-05 Seagate Technology Llc Methods of forming films

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994021557A1 (en) 1993-03-23 1994-09-29 Gruen Dieter M Conversion of fullerenes to diamond

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Hofsass H. et al.,"Doping and Growth of Diamond-Like Carbon Films by Ion Beam Deposition", DIAMOND AND RELATED MATERIALS, ELSEVIER SCIENCE PUBLISHERS, vol.3, no.1/02, p.137-142 (1994.01.01.)*
Kazuhiko Ito at al., "Evaluation of Thin Films Fabricated by Low Energy Direct Ion Beam Deposition for Soft X-Rays", NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, SECTION -B*

Also Published As

Publication number Publication date
EP2810298A1 (en) 2014-12-10
US20130200280A1 (en) 2013-08-08
TW201348475A (zh) 2013-12-01
JP2015517020A (ja) 2015-06-18
WO2013116595A1 (en) 2013-08-08
CN104303265B (zh) 2018-08-14
CN104303265A (zh) 2015-01-21
TWI516621B (zh) 2016-01-11
US9275833B2 (en) 2016-03-01
KR20140145123A (ko) 2014-12-22
MY174290A (en) 2020-04-02

Similar Documents

Publication Publication Date Title
US20160138154A1 (en) Methods of forming layers
KR101663063B1 (ko) 층들을 형성하는 방법들
CN102379005B (zh) 用离子和中性束注入改变膜的磁性
KR101701731B1 (ko) 층들을 형성하는 방법들
KR100445105B1 (ko) 가스 클러스터 이온빔을 이용한 아이.티.오 박막 표면처리시스템 및 그 방법
US20180245213A1 (en) Methods of forming films
von Keudell et al. Unraveling synergistic effects in plasma-surface processes by means of beam experiments
US6841249B2 (en) Method of a diamond surface and corresponding diamond surface
Kaiser et al. Deposition of size-selected clusters at hyperthermal energies investigated by STM
Yamada Applications of gas cluster ion beams for materials processing
WO2014120232A1 (en) System for low energy ion implantation and layer formation
KR20250164769A (ko) 기판의 표면 처리를 위한 방법 및 이러한 기판을 또 다른 기판과 본딩하기 위한 방법 및 이러한 방법들을 수행하기 위한 장치
WO2014120234A1 (en) Methods of forming layers
Cernusca Electron emission and nanodefects due to slow ion impact on solid surfaces
Fenner et al. Selected topics in ion beam surface engineering
Asselberghs Monday Morning, October 22, 2018
Poker et al. SYMPOSIUM O
Meguro Effects of Slow Highly Charged Ion Impact Upon Highly Oriented Pyrolytic Graphite—Nanoscale Modification of Electronic States of Graphite Surface—
Takaoka et al. Surface interaction and processing using polyatomic cluster ions

Legal Events

Date Code Title Description
A201 Request for examination
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20200126

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20200126

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000