CN104303265B - 形成层的方法 - Google Patents

形成层的方法 Download PDF

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Publication number
CN104303265B
CN104303265B CN201380012402.7A CN201380012402A CN104303265B CN 104303265 B CN104303265 B CN 104303265B CN 201380012402 A CN201380012402 A CN 201380012402A CN 104303265 B CN104303265 B CN 104303265B
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CN
China
Prior art keywords
mci
substrate
ion
kinetic energy
particle beams
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201380012402.7A
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English (en)
Chinese (zh)
Other versions
CN104303265A (zh
Inventor
P·G·皮彻
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Seagate Technology LLC
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Seagate Technology LLC
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Filing date
Publication date
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Publication of CN104303265A publication Critical patent/CN104303265A/zh
Application granted granted Critical
Publication of CN104303265B publication Critical patent/CN104303265B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02115—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0605—Carbon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
CN201380012402.7A 2012-02-03 2013-02-01 形成层的方法 Expired - Fee Related CN104303265B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261594547P 2012-02-03 2012-02-03
US61/594,547 2012-02-03
PCT/US2013/024269 WO2013116595A1 (en) 2012-02-03 2013-02-01 Methods of forming layers

Publications (2)

Publication Number Publication Date
CN104303265A CN104303265A (zh) 2015-01-21
CN104303265B true CN104303265B (zh) 2018-08-14

Family

ID=47790495

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380012402.7A Expired - Fee Related CN104303265B (zh) 2012-02-03 2013-02-01 形成层的方法

Country Status (8)

Country Link
US (1) US9275833B2 (enExample)
EP (1) EP2810298A1 (enExample)
JP (1) JP2015517020A (enExample)
KR (1) KR101701731B1 (enExample)
CN (1) CN104303265B (enExample)
MY (1) MY174290A (enExample)
TW (1) TWI516621B (enExample)
WO (1) WO2013116595A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130164454A1 (en) * 2011-04-07 2013-06-27 Seagate Technology Llc Methods of forming layers
CN104303265B (zh) 2012-02-03 2018-08-14 希捷科技有限公司 形成层的方法
US9280989B2 (en) 2013-06-21 2016-03-08 Seagate Technology Llc Magnetic devices including near field transducer

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CN1489638A (zh) * 2001-02-08 2004-04-14 ס�ѵ�����ҵ��ʽ���� 成膜方法和成膜装置

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Also Published As

Publication number Publication date
EP2810298A1 (en) 2014-12-10
US20130200280A1 (en) 2013-08-08
TW201348475A (zh) 2013-12-01
JP2015517020A (ja) 2015-06-18
WO2013116595A1 (en) 2013-08-08
CN104303265A (zh) 2015-01-21
TWI516621B (zh) 2016-01-11
US9275833B2 (en) 2016-03-01
KR20140145123A (ko) 2014-12-22
KR101701731B1 (ko) 2017-02-02
MY174290A (en) 2020-04-02

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Granted publication date: 20180814

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CF01 Termination of patent right due to non-payment of annual fee