JP2015517020A - 層を形成する方法 - Google Patents

層を形成する方法 Download PDF

Info

Publication number
JP2015517020A
JP2015517020A JP2014555733A JP2014555733A JP2015517020A JP 2015517020 A JP2015517020 A JP 2015517020A JP 2014555733 A JP2014555733 A JP 2014555733A JP 2014555733 A JP2014555733 A JP 2014555733A JP 2015517020 A JP2015517020 A JP 2015517020A
Authority
JP
Japan
Prior art keywords
mci
substrate
particle beam
charge
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2014555733A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015517020A5 (enExample
Inventor
ピッチャー，フィリップ・ジョージ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seagate Technology LLC
Original Assignee
Seagate Technology LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seagate Technology LLC filed Critical Seagate Technology LLC
Publication of JP2015517020A publication Critical patent/JP2015517020A/ja
Publication of JP2015517020A5 publication Critical patent/JP2015517020A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02115—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0605—Carbon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
JP2014555733A 2012-02-03 2013-02-01 層を形成する方法 Pending JP2015517020A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261594547P 2012-02-03 2012-02-03
US61/594,547 2012-02-03
PCT/US2013/024269 WO2013116595A1 (en) 2012-02-03 2013-02-01 Methods of forming layers

Publications (2)

Publication Number Publication Date
JP2015517020A true JP2015517020A (ja) 2015-06-18
JP2015517020A5 JP2015517020A5 (enExample) 2015-11-05

Family

ID=47790495

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014555733A Pending JP2015517020A (ja) 2012-02-03 2013-02-01 層を形成する方法

Country Status (8)

Country Link
US (1) US9275833B2 (enExample)
EP (1) EP2810298A1 (enExample)
JP (1) JP2015517020A (enExample)
KR (1) KR101701731B1 (enExample)
CN (1) CN104303265B (enExample)
MY (1) MY174290A (enExample)
TW (1) TWI516621B (enExample)
WO (1) WO2013116595A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130164454A1 (en) * 2011-04-07 2013-06-27 Seagate Technology Llc Methods of forming layers
CN104303265B (zh) 2012-02-03 2018-08-14 希捷科技有限公司 形成层的方法
US9280989B2 (en) 2013-06-21 2016-03-08 Seagate Technology Llc Magnetic devices including near field transducer

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63206387A (ja) * 1987-02-19 1988-08-25 Nissin Electric Co Ltd ダイヤモンド薄膜の作製方法
US5849093A (en) * 1992-01-08 1998-12-15 Andrae; Juergen Process for surface treatment with ions
JPH11130589A (ja) * 1997-10-28 1999-05-18 Nippon Hoso Kyokai <Nhk> ダイヤモンド膜またはダイヤモンド状炭素膜の成膜方法および装置、およびその方法および装置を用いて作製された冷陰極
JP2002544665A (ja) * 1999-05-07 2002-12-24 エキシオン シリコン基板表面上への酸化珪素薄膜の成長方法及び２つの反応器を有する装置

Family Cites Families (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4898774A (en) * 1986-04-03 1990-02-06 Komag, Inc. Corrosion and wear resistant magnetic disk
US4822466A (en) 1987-06-25 1989-04-18 University Of Houston - University Park Chemically bonded diamond films and method for producing same
US5113074A (en) 1991-01-29 1992-05-12 Eaton Corporation Ion beam potential detection probe
US5379712A (en) 1991-08-20 1995-01-10 Implant Sciences Corporation Method of epitaxially growing thin films using ion implantation
US5370855A (en) * 1991-11-25 1994-12-06 Gruen; Dieter M. Conversion of fullerenes to diamond
US5327475A (en) * 1992-08-18 1994-07-05 Ruxam, Inc. Soft x-ray submicron lithography using multiply charged ions
FR2718568B1 (fr) * 1994-04-06 1996-07-05 France Telecom Procédé d'implantation haute énergie à partir d'un implanteur de type faible ou moyen courant et dispositifs correspondants.
JP3318154B2 (ja) * 1995-06-07 2002-08-26 株式会社日立製作所 荷電粒子ビーム投射方法およびその装置
US5785825A (en) * 1995-07-20 1998-07-28 Seagate Technology, Inc. Multi-phase overcoats for magnetic discs
WO1997045834A1 (en) 1996-05-31 1997-12-04 Akashic Memories Corporation Recording media having protective overcoats of highly tetrahedral amorphous carbon and methods for their production
US5693939A (en) * 1996-07-03 1997-12-02 Purser; Kenneth H. MeV neutral beam ion implanter
US6312766B1 (en) 1998-03-12 2001-11-06 Agere Systems Guardian Corp. Article comprising fluorinated diamond-like carbon and method for fabricating article
US6130436A (en) 1998-06-02 2000-10-10 Varian Semiconductor Equipment Associates, Inc. Acceleration and analysis architecture for ion implanter
US6312798B1 (en) * 1998-09-25 2001-11-06 Seagate Technology Llc Magnetic recording medium having a nitrogen-doped hydrogenated carbon protective overcoat
US6303214B1 (en) * 1999-04-14 2001-10-16 Seagate Technology Llc Magnetic recording medium with high density thin dual carbon overcoats
US6632483B1 (en) 2000-06-30 2003-10-14 International Business Machines Corporation Ion gun deposition and alignment for liquid-crystal applications
US6589676B1 (en) 2000-07-25 2003-07-08 Seagate Technology Llc Corrosion resistant magnetic thin film media
US20030054133A1 (en) 2000-08-07 2003-03-20 Wadley Hadyn N.G. Apparatus and method for intra-layer modulation of the material deposition and assist beam and the multilayer structure produced therefrom
US6641932B1 (en) 2000-09-05 2003-11-04 Seagate Technology, Llc Magnetic thin film media with chromium capping layer
US6902773B1 (en) * 2000-11-21 2005-06-07 Hitachi Global Storage Technologies Netherlands, B.V. Energy gradient ion beam deposition of carbon overcoats on rigid disk media for magnetic recordings
US7064491B2 (en) 2000-11-30 2006-06-20 Semequip, Inc. Ion implantation system and control method
JP2002235168A (ja) * 2001-02-08 2002-08-23 Sumitomo Electric Ind Ltd 成膜方法および成膜装置
JP3912993B2 (ja) 2001-03-26 2007-05-09 株式会社荏原製作所 中性粒子ビーム処理装置
JP2003042930A (ja) 2001-08-03 2003-02-13 Pioneer Electronic Corp 近接場光発生素子及びこれを具備してなる光学装置
JP4184668B2 (ja) 2002-01-10 2008-11-19 富士通株式会社 Ｃｐｐ構造磁気抵抗効果素子
EP1550144A4 (en) 2002-09-23 2009-07-08 Tel Epion Inc ION BEAM BEAM TREATMENT METHOD AND SYSTEM THEREFOR
JP4560712B2 (ja) * 2003-07-18 2010-10-13 イーエムエス ナノファブリカツィオン アーゲー 超高および超低運動イオン・エネルギーによるターゲットのイオン照射
JP4092280B2 (ja) * 2003-10-23 2008-05-28 株式会社東芝 荷電ビーム装置および荷電粒子検出方法
US7902527B2 (en) 2004-05-18 2011-03-08 Jiong Chen Apparatus and methods for ion beam implantation using ribbon and spot beams
US7067807B2 (en) 2004-09-08 2006-06-27 Applied Materials, Israel, Ltd. Charged particle beam column and method of its operation
US7868305B2 (en) 2005-03-16 2011-01-11 Varian Semiconductor Equipment Associates, Inc. Technique for ion beam angle spread control
KR101407692B1 (ko) 2006-06-12 2014-06-17 액셀리스 테크놀러지스, 인크. 이온 주입기 내의 비임 각도 조절
US7476855B2 (en) 2006-09-19 2009-01-13 Axcelis Technologies, Inc. Beam tuning with automatic magnet pole rotation for ion implanters
JP4597933B2 (ja) 2006-09-21 2010-12-15 昭和電工株式会社 磁気記録媒体の製造方法、並びに磁気記録再生装置
JP5278887B2 (ja) 2006-11-20 2013-09-04 セイコーインスツル株式会社 近接場光ヘッド及び情報記録再生装置
US7544958B2 (en) * 2007-03-23 2009-06-09 Varian Semiconductor Equipment Associates, Inc. Contamination reduction during ion implantation
US20080305598A1 (en) 2007-06-07 2008-12-11 Horsky Thomas N Ion implantation device and a method of semiconductor manufacturing by the implantation of ions derived from carborane molecular species
US8248891B2 (en) 2008-11-18 2012-08-21 Seagate Technology Llc Near-field transducers for focusing light
US7965464B2 (en) 2008-11-20 2011-06-21 Seagate Technology Llc Heat-assisted magnetic recording with shaped magnetic and thermal fields
KR100927995B1 (ko) * 2008-11-20 2009-11-24 한국기초과학지원연구원 전자 맴돌이 공명 이온원 장치 및 그의 제조방법
US20100190036A1 (en) 2009-01-27 2010-07-29 Kyriakos Komvopoulos Systems and Methods for Surface Modification by Filtered Cathodic Vacuum Arc
US8455060B2 (en) * 2009-02-19 2013-06-04 Tel Epion Inc. Method for depositing hydrogenated diamond-like carbon films using a gas cluster ion beam
US7998607B2 (en) 2009-07-31 2011-08-16 Hitachi Global Storage Technologies Netherlands, B.V. Partially-oxidized cap layer for hard disk drive magnetic media
US8325567B2 (en) 2009-09-10 2012-12-04 Tdk Corporation Thermally-assisted magnetic recording head comprising near-field light generator
US8339740B2 (en) 2010-02-23 2012-12-25 Seagate Technology Llc Recording head for heat assisted magnetic recording with diffusion barrier surrounding a near field transducer
US8427925B2 (en) 2010-02-23 2013-04-23 Seagate Technology Llc HAMR NFT materials with improved thermal stability
US8375565B2 (en) 2010-05-28 2013-02-19 Western Digital (Fremont), Llc Method for providing an electronic lapping guide corresponding to a near-field transducer of an energy assisted magnetic recording transducer
US8351307B1 (en) 2010-06-04 2013-01-08 Western Digital (Fremont), Llc Trailing edge optimized near field transducer having non-rectangular pin cross section
US8077559B1 (en) 2010-06-25 2011-12-13 Tdk Corporation Thermally-assisted magnetic recording head including plasmon generator
US8351151B2 (en) 2010-11-02 2013-01-08 Hitachi Global Storage Technologies Netherlands B.V. Thermally assisted magnetic write head employing a near field transducer (NFT) having a diffusion barrier layer between the near field transducer and a magnetic lip
CN104303265B (zh) 2012-02-03 2018-08-14 希捷科技有限公司 形成层的方法
KR101663063B1 (ko) * 2012-02-03 2016-10-14 시게이트 테크놀로지 엘엘씨 층들을 형성하는 방법들
US9288889B2 (en) 2013-03-13 2016-03-15 Varian Semiconductor Equipment Associates, Inc. Apparatus and techniques for energetic neutral beam processing
US20150064365A1 (en) 2013-08-29 2015-03-05 Seagate Technology Llc Methods of forming films

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63206387A (ja) * 1987-02-19 1988-08-25 Nissin Electric Co Ltd ダイヤモンド薄膜の作製方法
US5849093A (en) * 1992-01-08 1998-12-15 Andrae; Juergen Process for surface treatment with ions
JPH11130589A (ja) * 1997-10-28 1999-05-18 Nippon Hoso Kyokai <Nhk> ダイヤモンド膜またはダイヤモンド状炭素膜の成膜方法および装置、およびその方法および装置を用いて作製された冷陰極
JP2002544665A (ja) * 1999-05-07 2002-12-24 エキシオン シリコン基板表面上への酸化珪素薄膜の成長方法及び２つの反応器を有する装置

Also Published As

Publication number Publication date
EP2810298A1 (en) 2014-12-10
US20130200280A1 (en) 2013-08-08
TW201348475A (zh) 2013-12-01
WO2013116595A1 (en) 2013-08-08
CN104303265B (zh) 2018-08-14
CN104303265A (zh) 2015-01-21
TWI516621B (zh) 2016-01-11
US9275833B2 (en) 2016-03-01
KR20140145123A (ko) 2014-12-22
KR101701731B1 (ko) 2017-02-02
MY174290A (en) 2020-04-02

Similar Documents

Publication Publication Date Title
US20130161505A1 (en) Methods of forming layers
US8764952B2 (en) Method for smoothing a solid surface
KR101663063B1 (ko) 층들을 형성하는 방법들
CN104986728B (zh) 一种大面积纳米阵列的制备方法
US20100096263A1 (en) Solid surface smoothing apparatus
JP2007277708A (ja) 成膜装置および成膜方法
JP2015517020A (ja) 層を形成する方法
CN112639161A (zh) 用于制备催化纳米颗粒、催化剂表面和/或催化剂的方法
TW201232796A (en) Direct current ion implantation for solid phase epitaxial regrowth in solar cell fabrication
US20180245213A1 (en) Methods of forming films
Bettge et al. Ion-induced surface relaxation: controlled bending and alignment of nanowire arrays
Nagase et al. Nanosmoothing of single crystal diamond chips by 1 keV Ar+ ion bombardment
WO2014120232A1 (en) System for low energy ion implantation and layer formation
WO2014120233A1 (en) Methods of forming layers
WO2014120234A1 (en) Methods of forming layers
Chen et al. Smooth and narrow nanopillars fabricated by ion-beam-induced deposition under charging conditions
Vanhellemont et al. In situ UHVEM study of {113}-defect formation in Si nanowires
Asselberghs Monday Morning, October 22, 2018
Chen Cluster ion beam modification of material surfaces
Lee et al. Electron-irradiation-induced phase change in nanomaterials
Takaoka et al. High-Rate Sputtering of Si and SiO2 with Atomically Flat Surfaces by Using Ethanol Cluster Ion Beams
Hiramatsu Growth Control of Carbon Nanowalls
Yurasova XIX International Conference" Interaction of Ions with a Surface"(IIS 2009)
HK1229066A1 (en) Perforating two-dimensional materials using broad ion field

Legal Events

Date Code Title Description
A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20150313

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20150313

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150909

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20150909

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20160617

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20160628

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20160927

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20161125

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20161227

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20170314