MY152238A - Printable semiconductor structures and related methods of making and assembling - Google Patents

Printable semiconductor structures and related methods of making and assembling

Info

Publication number
MY152238A
MY152238A MYPI20113695A MY152238A MY 152238 A MY152238 A MY 152238A MY PI20113695 A MYPI20113695 A MY PI20113695A MY 152238 A MY152238 A MY 152238A
Authority
MY
Malaysia
Prior art keywords
making
present
printable semiconductor
compositions
substrates
Prior art date
Application number
Other languages
English (en)
Inventor
Ralph G Nuzzo
John A Rogers
Etienne Menard
Keon Jae Lee
Dahl-Young Khang
Yugang Sun
Matthew Meitl
Zhengtao Zhu
Heung Cho Ko
Original Assignee
Univ Illinois
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from PCT/US2005/019354 external-priority patent/WO2005122285A2/en
Application filed by Univ Illinois filed Critical Univ Illinois
Publication of MY152238A publication Critical patent/MY152238A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7781—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with inverted single heterostructure, i.e. with active layer formed on top of wide bandgap layer, e.g. IHEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02598—Microstructure monocrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1606—Graphene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01049—Indium [In]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01051—Antimony [Sb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
MYPI20113695 2005-06-02 2006-06-01 Printable semiconductor structures and related methods of making and assembling MY152238A (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
PCT/US2005/019354 WO2005122285A2 (en) 2004-06-04 2005-06-02 Methods and devices for fabricating and assembling printable semiconductor elements
US11/145,574 US7622367B1 (en) 2004-06-04 2005-06-02 Methods and devices for fabricating and assembling printable semiconductor elements
US11/145,542 US7557367B2 (en) 2004-06-04 2005-06-02 Stretchable semiconductor elements and stretchable electrical circuits
US79010406P 2006-04-07 2006-04-07

Publications (1)

Publication Number Publication Date
MY152238A true MY152238A (en) 2014-09-15

Family

ID=38682516

Family Applications (4)

Application Number Title Priority Date Filing Date
MYPI20113695 MY152238A (en) 2005-06-02 2006-06-01 Printable semiconductor structures and related methods of making and assembling
MYPI20062537 MY151572A (en) 2005-06-02 2006-06-01 Printable semiconductor structures and related methods of making and assembling
MYPI20062672A MY143492A (en) 2006-04-07 2006-06-08 A stretchable form of single crystal silicon for high performance electronics on rubber substrates
MYPI20094997A MY163588A (en) 2006-04-07 2006-06-08 A stretchable form of single crystal silicon for high performance electronics on rubber substrates

Family Applications After (3)

Application Number Title Priority Date Filing Date
MYPI20062537 MY151572A (en) 2005-06-02 2006-06-01 Printable semiconductor structures and related methods of making and assembling
MYPI20062672A MY143492A (en) 2006-04-07 2006-06-08 A stretchable form of single crystal silicon for high performance electronics on rubber substrates
MYPI20094997A MY163588A (en) 2006-04-07 2006-06-08 A stretchable form of single crystal silicon for high performance electronics on rubber substrates

Country Status (4)

Country Link
JP (6) JP2007281406A (zh)
KR (5) KR20070100617A (zh)
MY (4) MY152238A (zh)
TW (7) TWI427802B (zh)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7622367B1 (en) 2004-06-04 2009-11-24 The Board Of Trustees Of The University Of Illinois Methods and devices for fabricating and assembling printable semiconductor elements
MY152238A (en) * 2005-06-02 2014-09-15 Univ Illinois Printable semiconductor structures and related methods of making and assembling
WO2008030960A2 (en) * 2006-09-06 2008-03-13 The Board Of Trustees Of The University Of Illinois Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics
KR101610885B1 (ko) * 2007-01-17 2016-04-08 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 프린팅­기반 어셈블리에 의해 제조되는 광학 시스템
TWI723953B (zh) * 2008-03-05 2021-04-11 美國伊利諾大學理事會 可延展且可折疊的電子裝置
US8134163B2 (en) * 2008-08-11 2012-03-13 Taiwan Semiconductor Manfacturing Co., Ltd. Light-emitting diodes on concave texture substrate
US8519379B2 (en) * 2009-12-08 2013-08-27 Zena Technologies, Inc. Nanowire structured photodiode with a surrounding epitaxially grown P or N layer
US8389862B2 (en) 2008-10-07 2013-03-05 Mc10, Inc. Extremely stretchable electronics
US8886334B2 (en) 2008-10-07 2014-11-11 Mc10, Inc. Systems, methods, and devices using stretchable or flexible electronics for medical applications
JP2012515436A (ja) * 2009-01-12 2012-07-05 エムシー１０ インコーポレイテッド 非平面撮像アレイの方法及び応用
KR101048356B1 (ko) * 2009-06-08 2011-07-14 서울대학교산학협력단 잡아 늘일 수 있는 전자소자들의 금속 연결 구조 및 그 제조방법
WO2011041727A1 (en) 2009-10-01 2011-04-07 Mc10, Inc. Protective cases with integrated electronics
JP2011138934A (ja) 2009-12-28 2011-07-14 Sony Corp 薄膜トランジスタ、表示装置および電子機器
US8992807B2 (en) 2010-01-14 2015-03-31 Samsung Techwin Co., Ltd. Method of manufacturing deformation-capable graphene sheet, deformation-capable graphene sheet, and device using the same
KR101262319B1 (ko) * 2010-12-31 2013-05-08 그래핀스퀘어 주식회사 그래핀 전극을 포함하는 플렉시블/스트레처블 반도체 소자, 반도체층과 그래핀 전극 사이의 접촉저항 감소 방법, 및 그래핀 인터커넥터
KR102000302B1 (ko) 2011-05-27 2019-07-15 엠씨10, 인크 전자, 광학, 및/또는 기계 장치 및 시스템, 그리고 이를 제조하기 위한 방법
US9171794B2 (en) 2012-10-09 2015-10-27 Mc10, Inc. Embedding thin chips in polymer
TWI524825B (zh) 2012-10-29 2016-03-01 財團法人工業技術研究院 碳材導電膜的轉印方法
FR2997554B1 (fr) * 2012-10-31 2016-04-08 Soitec Silicon On Insulator Procede de modification d'un etat de contrainte initial d'une couche active vers un etat de contrainte final
KR102229373B1 (ko) * 2013-10-08 2021-03-17 한양대학교 산학협력단 유연소자의 제조방법, 그에 의하여 제조된 유연소자 및 접합소자
KR101447238B1 (ko) * 2014-06-20 2014-10-08 한국기계연구원 양자점 박막 형성 방법
KR102255198B1 (ko) * 2014-08-12 2021-05-25 삼성디스플레이 주식회사 스트레처블 기판 및 이를 구비한 유기 발광 표시 장치
KR102416112B1 (ko) * 2014-10-02 2022-07-04 삼성전자주식회사 스트레처블/폴더블 광전자소자와 그 제조방법 및 광전자소자를 포함하는 장치
JP6620318B2 (ja) 2014-11-27 2019-12-18 パナソニックＩｐマネジメント株式会社 シート状伸縮性構造体
JP6369788B2 (ja) 2014-11-27 2018-08-08 パナソニックＩｐマネジメント株式会社 エレクトロニクス用構造体
KR101630817B1 (ko) 2014-12-10 2016-06-15 한국과학기술연구원 굴곡진 금속 나노와이어 네트워크, 이를 포함하는 신축성 투명전극 및 이의 제조방법
US10297575B2 (en) * 2016-05-06 2019-05-21 Amkor Technology, Inc. Semiconductor device utilizing an adhesive to attach an upper package to a lower die
KR102250527B1 (ko) * 2016-12-08 2021-05-10 고려대학교 산학협력단 가변 칼라 필터 필름 및 변형률 측정 장치
EP3697179A4 (en) * 2017-10-12 2021-09-01 Dai Nippon Printing Co., Ltd. WIRING SUBSTRATE AND ITS MANUFACTURING PROCESS
WO2019074115A1 (ja) 2017-10-12 2019-04-18 大日本印刷株式会社 配線基板及び配線基板の製造方法
CN111165077B (zh) 2017-10-12 2023-05-16 大日本印刷株式会社 配线基板和配线基板的制造方法
US10959326B2 (en) 2017-11-07 2021-03-23 Dai Nippon Printing Co., Ltd. Stretchable circuit substrate and article
KR102027115B1 (ko) * 2017-11-28 2019-10-01 고려대학교 세종산학협력단 유기광전소자 및 이의 제조방법
KR102100550B1 (ko) * 2018-01-29 2020-04-13 충북대학교 산학협력단 구리 전극 제작 방법 및 구리 전극 제작 시스템
KR102119009B1 (ko) * 2018-03-08 2020-06-04 포항공과대학교 산학협력단 신축성 기판의 제조방법 및 그를 포함하는 신축성 전자기기의 제조방법
KR102119023B1 (ko) * 2018-04-23 2020-06-04 포항공과대학교 산학협력단 2종 이상의 올리고머를 이용한 신축성 기판의 제조방법 및 그를 포함하는 신축성 전자기기의 제조방법
KR102554461B1 (ko) * 2018-07-26 2023-07-10 엘지디스플레이 주식회사 스트레쳐블 표시 장치
KR102172349B1 (ko) * 2018-09-14 2020-10-30 포항공과대학교 산학협력단 신축성 기판의 제조방법 및 그를 포함하는 신축성 전자기기의 제조방법
WO2020091012A1 (ja) 2018-10-31 2020-05-07 大日本印刷株式会社 配線基板及び配線基板の製造方法
CN112997587A (zh) 2018-10-31 2021-06-18 大日本印刷株式会社 配线基板和配线基板的制造方法
US11395404B2 (en) 2018-11-16 2022-07-19 Dai Nippon Printing Co., Ltd. Wiring board and method for manufacturing the wiring board
CN113016237B (zh) 2018-11-16 2024-06-18 大日本印刷株式会社 配线基板和配线基板的制造方法
JP7249512B2 (ja) * 2018-11-30 2023-03-31 大日本印刷株式会社 配線基板及び配線基板の製造方法
CN113615323B (zh) 2019-03-20 2024-05-28 大日本印刷株式会社 配线基板和配线基板的制造方法
CN111554638B (zh) * 2020-04-16 2023-09-08 上海交通大学 用于可拉伸电子装置的基底及其制备方法
CN111952322B (zh) * 2020-08-14 2022-06-03 电子科技大学 一种具有周期可调屈曲结构的柔性半导体薄膜及制备方法
CN112366250B (zh) * 2020-11-17 2022-11-15 佛山市国星半导体技术有限公司 一种GaN基紫外探测器及其制作方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998018164A1 (fr) * 1996-10-17 1998-04-30 Seiko Epson Corporation Dispositif a semi-conducteur, procede de fabrication, plaquette de circuit et substrat souple
US6787052B1 (en) * 2000-06-19 2004-09-07 Vladimir Vaganov Method for fabricating microstructures with deep anisotropic etching of thick silicon wafers
US6566273B2 (en) * 2001-06-27 2003-05-20 Infineon Technologies Ag Etch selectivity inversion for etching along crystallographic directions in silicon
AU2003223783A1 (en) * 2002-04-29 2003-11-17 Silicon Pipe, Inc. Direct-connect signaling system
JP2004071874A (ja) * 2002-08-07 2004-03-04 Sharp Corp 半導体装置製造方法および半導体装置
US7491892B2 (en) * 2003-03-28 2009-02-17 Princeton University Stretchable and elastic interconnects
US7704684B2 (en) * 2003-12-01 2010-04-27 The Board Of Trustees Of The University Of Illinois Methods and devices for fabricating three-dimensional nanoscale structures
US7566640B2 (en) * 2003-12-15 2009-07-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film integrated circuit device, noncontact thin film integrated circuit device and method for manufacturing the same, and idtag and coin including the noncontact thin film integrated circuit device
JP5110766B2 (ja) * 2003-12-15 2012-12-26 株式会社半導体エネルギー研究所 薄膜集積回路装置の作製方法及び非接触型薄膜集積回路装置の作製方法
JP4841807B2 (ja) * 2004-02-27 2011-12-21 株式会社半導体エネルギー研究所 薄膜集積回路及び薄型半導体装置
CN101427182B (zh) * 2004-04-27 2011-10-19 伊利诺伊大学评议会 用于软光刻法的复合构图设备
US7622367B1 (en) * 2004-06-04 2009-11-24 The Board Of Trustees Of The University Of Illinois Methods and devices for fabricating and assembling printable semiconductor elements
MY152238A (en) * 2005-06-02 2014-09-15 Univ Illinois Printable semiconductor structures and related methods of making and assembling

Also Published As

Publication number Publication date
TWI427802B (zh) 2014-02-21
TW200721517A (en) 2007-06-01
KR20130133733A (ko) 2013-12-09
KR20070100617A (ko) 2007-10-11
JP6377689B2 (ja) 2018-08-22
TW201428984A (zh) 2014-07-16
JP6574157B2 (ja) 2019-09-11
KR20170077097A (ko) 2017-07-05
MY163588A (en) 2017-09-29
MY151572A (en) 2014-06-13
JP2017038064A (ja) 2017-02-16
TWI336491B (en) 2011-01-21
JP5851457B2 (ja) 2016-02-03
TWI489523B (zh) 2015-06-21
TW200739681A (en) 2007-10-16
TW201216641A (en) 2012-04-16
JP2007281406A (ja) 2007-10-25
JP2019004151A (ja) 2019-01-10
TW201519287A (zh) 2015-05-16
MY143492A (en) 2011-05-31
JP6140207B2 (ja) 2017-05-31
TW201717261A (zh) 2017-05-16
TWI466488B (zh) 2014-12-21
JP2015133510A (ja) 2015-07-23
JP2017103459A (ja) 2017-06-08
JP2014017495A (ja) 2014-01-30
TWI533459B (zh) 2016-05-11
TW201042951A (en) 2010-12-01
TWI570776B (zh) 2017-02-11
KR20140107158A (ko) 2014-09-04
KR20150044865A (ko) 2015-04-27

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