MY152238A - Printable semiconductor structures and related methods of making and assembling - Google Patents
Printable semiconductor structures and related methods of making and assemblingInfo
- Publication number
- MY152238A MY152238A MYPI20113695A MY152238A MY 152238 A MY152238 A MY 152238A MY PI20113695 A MYPI20113695 A MY PI20113695A MY 152238 A MY152238 A MY 152238A
- Authority
- MY
- Malaysia
- Prior art keywords
- making
- present
- printable semiconductor
- compositions
- substrates
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 238000000034 method Methods 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 238000004519 manufacturing process Methods 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000003913 materials processing Methods 0.000 abstract 1
- 230000037361 pathway Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000002520 smart material Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7781—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with inverted single heterostructure, i.e. with active layer formed on top of wide bandgap layer, e.g. IHEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02598—Microstructure monocrystalline
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1606—Graphene
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01049—Indium [In]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01051—Antimony [Sb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/145,542 US7557367B2 (en) | 2004-06-04 | 2005-06-02 | Stretchable semiconductor elements and stretchable electrical circuits |
US11/145,574 US7622367B1 (en) | 2004-06-04 | 2005-06-02 | Methods and devices for fabricating and assembling printable semiconductor elements |
PCT/US2005/019354 WO2005122285A2 (en) | 2004-06-04 | 2005-06-02 | Methods and devices for fabricating and assembling printable semiconductor elements |
US79010406P | 2006-04-07 | 2006-04-07 |
Publications (1)
Publication Number | Publication Date |
---|---|
MY152238A true MY152238A (en) | 2014-09-15 |
Family
ID=38682516
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MYPI20062537 MY151572A (en) | 2005-06-02 | 2006-06-01 | Printable semiconductor structures and related methods of making and assembling |
MYPI20113695 MY152238A (en) | 2005-06-02 | 2006-06-01 | Printable semiconductor structures and related methods of making and assembling |
MYPI20094997A MY163588A (en) | 2006-04-07 | 2006-06-08 | A stretchable form of single crystal silicon for high performance electronics on rubber substrates |
MYPI20062672A MY143492A (en) | 2006-04-07 | 2006-06-08 | A stretchable form of single crystal silicon for high performance electronics on rubber substrates |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MYPI20062537 MY151572A (en) | 2005-06-02 | 2006-06-01 | Printable semiconductor structures and related methods of making and assembling |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MYPI20094997A MY163588A (en) | 2006-04-07 | 2006-06-08 | A stretchable form of single crystal silicon for high performance electronics on rubber substrates |
MYPI20062672A MY143492A (en) | 2006-04-07 | 2006-06-08 | A stretchable form of single crystal silicon for high performance electronics on rubber substrates |
Country Status (4)
Country | Link |
---|---|
JP (6) | JP2007281406A (zh) |
KR (5) | KR20070100617A (zh) |
MY (4) | MY151572A (zh) |
TW (7) | TWI427802B (zh) |
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KR101260981B1 (ko) | 2004-06-04 | 2013-05-10 | 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 | 인쇄가능한 반도체소자들의 제조 및 조립방법과 장치 |
TWI427802B (zh) * | 2005-06-02 | 2014-02-21 | Univ Illinois | 可印刷半導體結構及製造和組合之相關方法 |
TWI654770B (zh) * | 2006-09-06 | 2019-03-21 | 美國伊利諾大學理事會 | 二維可延伸且可撓曲設備及其製造方法 |
CN101617406B (zh) * | 2007-01-17 | 2011-04-20 | 伊利诺伊大学评议会 | 通过基于印刷的组装制造的光学系统 |
CN103872002B (zh) | 2008-03-05 | 2017-03-01 | 伊利诺伊大学评议会 | 可拉伸和可折叠的电子器件 |
US8134163B2 (en) * | 2008-08-11 | 2012-03-13 | Taiwan Semiconductor Manfacturing Co., Ltd. | Light-emitting diodes on concave texture substrate |
US8519379B2 (en) * | 2009-12-08 | 2013-08-27 | Zena Technologies, Inc. | Nanowire structured photodiode with a surrounding epitaxially grown P or N layer |
US8886334B2 (en) | 2008-10-07 | 2014-11-11 | Mc10, Inc. | Systems, methods, and devices using stretchable or flexible electronics for medical applications |
US8389862B2 (en) | 2008-10-07 | 2013-03-05 | Mc10, Inc. | Extremely stretchable electronics |
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US9723122B2 (en) | 2009-10-01 | 2017-08-01 | Mc10, Inc. | Protective cases with integrated electronics |
JP2011138934A (ja) | 2009-12-28 | 2011-07-14 | Sony Corp | 薄膜トランジスタ、表示装置および電子機器 |
US8992807B2 (en) | 2010-01-14 | 2015-03-31 | Samsung Techwin Co., Ltd. | Method of manufacturing deformation-capable graphene sheet, deformation-capable graphene sheet, and device using the same |
WO2012091498A1 (ko) * | 2010-12-31 | 2012-07-05 | 성균관대학교산학협력단 | 그래핀 전극을 포함하는 플렉시블/스트레처블 반도체 소자, 반도체층과 그래핀 전극 사이의 접촉저항 감소 방법, 및 그래핀 인터커넥터 |
WO2012166686A2 (en) | 2011-05-27 | 2012-12-06 | Mc10, Inc. | Electronic, optical and/or mechanical apparatus and systems and methods for fabricating same |
US9171794B2 (en) | 2012-10-09 | 2015-10-27 | Mc10, Inc. | Embedding thin chips in polymer |
TWI524825B (zh) | 2012-10-29 | 2016-03-01 | 財團法人工業技術研究院 | 碳材導電膜的轉印方法 |
FR2997554B1 (fr) * | 2012-10-31 | 2016-04-08 | Soitec Silicon On Insulator | Procede de modification d'un etat de contrainte initial d'une couche active vers un etat de contrainte final |
KR102229373B1 (ko) * | 2013-10-08 | 2021-03-17 | 한양대학교 산학협력단 | 유연소자의 제조방법, 그에 의하여 제조된 유연소자 및 접합소자 |
KR101447238B1 (ko) * | 2014-06-20 | 2014-10-08 | 한국기계연구원 | 양자점 박막 형성 방법 |
KR102255198B1 (ko) * | 2014-08-12 | 2021-05-25 | 삼성디스플레이 주식회사 | 스트레처블 기판 및 이를 구비한 유기 발광 표시 장치 |
KR102416112B1 (ko) * | 2014-10-02 | 2022-07-04 | 삼성전자주식회사 | 스트레처블/폴더블 광전자소자와 그 제조방법 및 광전자소자를 포함하는 장치 |
JP6620318B2 (ja) | 2014-11-27 | 2019-12-18 | パナソニックIpマネジメント株式会社 | シート状伸縮性構造体 |
JP6369788B2 (ja) | 2014-11-27 | 2018-08-08 | パナソニックIpマネジメント株式会社 | エレクトロニクス用構造体 |
KR101630817B1 (ko) | 2014-12-10 | 2016-06-15 | 한국과학기술연구원 | 굴곡진 금속 나노와이어 네트워크, 이를 포함하는 신축성 투명전극 및 이의 제조방법 |
US10297575B2 (en) * | 2016-05-06 | 2019-05-21 | Amkor Technology, Inc. | Semiconductor device utilizing an adhesive to attach an upper package to a lower die |
KR102250527B1 (ko) * | 2016-12-08 | 2021-05-10 | 고려대학교 산학협력단 | 가변 칼라 필터 필름 및 변형률 측정 장치 |
JP6582155B2 (ja) | 2017-10-12 | 2019-09-25 | 大日本印刷株式会社 | 配線基板及び配線基板の製造方法 |
US11109479B2 (en) | 2017-10-12 | 2021-08-31 | Dai Nippon Printing Co., Ltd. | Wiring board and method for manufacturing wiring board |
US11612054B2 (en) | 2017-10-12 | 2023-03-21 | Dai Nippon Printing Co., Ltd. | Wiring board and method for manufacturing wiring board |
US10959326B2 (en) | 2017-11-07 | 2021-03-23 | Dai Nippon Printing Co., Ltd. | Stretchable circuit substrate and article |
KR102027115B1 (ko) * | 2017-11-28 | 2019-10-01 | 고려대학교 세종산학협력단 | 유기광전소자 및 이의 제조방법 |
KR102100550B1 (ko) * | 2018-01-29 | 2020-04-13 | 충북대학교 산학협력단 | 구리 전극 제작 방법 및 구리 전극 제작 시스템 |
KR102119009B1 (ko) * | 2018-03-08 | 2020-06-04 | 포항공과대학교 산학협력단 | 신축성 기판의 제조방법 및 그를 포함하는 신축성 전자기기의 제조방법 |
KR102119023B1 (ko) * | 2018-04-23 | 2020-06-04 | 포항공과대학교 산학협력단 | 2종 이상의 올리고머를 이용한 신축성 기판의 제조방법 및 그를 포함하는 신축성 전자기기의 제조방법 |
KR102554461B1 (ko) * | 2018-07-26 | 2023-07-10 | 엘지디스플레이 주식회사 | 스트레쳐블 표시 장치 |
KR102172349B1 (ko) * | 2018-09-14 | 2020-10-30 | 포항공과대학교 산학협력단 | 신축성 기판의 제조방법 및 그를 포함하는 신축성 전자기기의 제조방법 |
US11744011B2 (en) | 2018-10-31 | 2023-08-29 | Dai Nippon Printing Co., Ltd. | Wiring board and method for manufacturing wiring board |
WO2020091010A1 (ja) | 2018-10-31 | 2020-05-07 | 大日本印刷株式会社 | 配線基板及び配線基板の製造方法 |
JP6696634B1 (ja) | 2018-11-16 | 2020-05-20 | 大日本印刷株式会社 | 配線基板及び配線基板の製造方法 |
CN113016237A (zh) | 2018-11-16 | 2021-06-22 | 大日本印刷株式会社 | 配线基板和配线基板的制造方法 |
JP7249512B2 (ja) * | 2018-11-30 | 2023-03-31 | 大日本印刷株式会社 | 配線基板及び配線基板の製造方法 |
JP6826786B1 (ja) * | 2019-03-20 | 2021-02-10 | 大日本印刷株式会社 | 配線基板及び配線基板の製造方法 |
CN111554638B (zh) * | 2020-04-16 | 2023-09-08 | 上海交通大学 | 用于可拉伸电子装置的基底及其制备方法 |
CN111952322B (zh) * | 2020-08-14 | 2022-06-03 | 电子科技大学 | 一种具有周期可调屈曲结构的柔性半导体薄膜及制备方法 |
CN112366250B (zh) * | 2020-11-17 | 2022-11-15 | 佛山市国星半导体技术有限公司 | 一种GaN基紫外探测器及其制作方法 |
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US6787052B1 (en) * | 2000-06-19 | 2004-09-07 | Vladimir Vaganov | Method for fabricating microstructures with deep anisotropic etching of thick silicon wafers |
US6566273B2 (en) * | 2001-06-27 | 2003-05-20 | Infineon Technologies Ag | Etch selectivity inversion for etching along crystallographic directions in silicon |
US7307293B2 (en) * | 2002-04-29 | 2007-12-11 | Silicon Pipe, Inc. | Direct-connect integrated circuit signaling system for bypassing intra-substrate printed circuit signal paths |
JP2004071874A (ja) * | 2002-08-07 | 2004-03-04 | Sharp Corp | 半導体装置製造方法および半導体装置 |
US7491892B2 (en) * | 2003-03-28 | 2009-02-17 | Princeton University | Stretchable and elastic interconnects |
US7704684B2 (en) * | 2003-12-01 | 2010-04-27 | The Board Of Trustees Of The University Of Illinois | Methods and devices for fabricating three-dimensional nanoscale structures |
JP5110766B2 (ja) * | 2003-12-15 | 2012-12-26 | 株式会社半導体エネルギー研究所 | 薄膜集積回路装置の作製方法及び非接触型薄膜集積回路装置の作製方法 |
CN1894796B (zh) * | 2003-12-15 | 2010-09-01 | 株式会社半导体能源研究所 | 薄膜集成电路器件的制造方法和非接触薄膜集成电路器件及其制造方法 |
JP4841807B2 (ja) * | 2004-02-27 | 2011-12-21 | 株式会社半導体エネルギー研究所 | 薄膜集積回路及び薄型半導体装置 |
KR101185613B1 (ko) * | 2004-04-27 | 2012-09-24 | 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 | 소프트 리소그래피용 복합 패터닝 장치 |
KR101260981B1 (ko) * | 2004-06-04 | 2013-05-10 | 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 | 인쇄가능한 반도체소자들의 제조 및 조립방법과 장치 |
TWI427802B (zh) * | 2005-06-02 | 2014-02-21 | Univ Illinois | 可印刷半導體結構及製造和組合之相關方法 |
-
2006
- 2006-06-01 TW TW095119520A patent/TWI427802B/zh active
- 2006-06-01 MY MYPI20062537 patent/MY151572A/en unknown
- 2006-06-01 TW TW102142517A patent/TWI533459B/zh active
- 2006-06-01 MY MYPI20113695 patent/MY152238A/en unknown
- 2006-06-08 MY MYPI20094997A patent/MY163588A/en unknown
- 2006-06-08 MY MYPI20062672A patent/MY143492A/en unknown
- 2006-06-14 TW TW105135576A patent/TW201717261A/zh unknown
- 2006-06-14 KR KR1020060053675A patent/KR20070100617A/ko not_active Application Discontinuation
- 2006-06-14 JP JP2006165159A patent/JP2007281406A/ja active Pending
- 2006-06-14 TW TW104103340A patent/TWI570776B/zh active
- 2006-06-14 TW TW100139527A patent/TWI466488B/zh active
- 2006-06-14 TW TW095121212A patent/TWI336491B/zh active
- 2006-06-14 TW TW099127004A patent/TWI489523B/zh active
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2013
- 2013-08-16 JP JP2013169101A patent/JP5851457B2/ja active Active
- 2013-10-31 KR KR1020130131753A patent/KR20130133733A/ko active Search and Examination
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2014
- 2014-07-29 KR KR1020140096828A patent/KR20140107158A/ko not_active Application Discontinuation
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2015
- 2015-03-02 JP JP2015040251A patent/JP6140207B2/ja active Active
- 2015-03-24 KR KR20150040631A patent/KR20150044865A/ko active Search and Examination
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2016
- 2016-09-08 JP JP2016175541A patent/JP6377689B2/ja active Active
- 2016-11-28 JP JP2016230221A patent/JP6574157B2/ja active Active
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2017
- 2017-06-26 KR KR1020170080342A patent/KR20170077097A/ko not_active Application Discontinuation
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2018
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Also Published As
Publication number | Publication date |
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JP5851457B2 (ja) | 2016-02-03 |
MY151572A (en) | 2014-06-13 |
TWI489523B (zh) | 2015-06-21 |
TWI427802B (zh) | 2014-02-21 |
TWI533459B (zh) | 2016-05-11 |
TW200721517A (en) | 2007-06-01 |
KR20070100617A (ko) | 2007-10-11 |
JP6574157B2 (ja) | 2019-09-11 |
MY143492A (en) | 2011-05-31 |
TWI570776B (zh) | 2017-02-11 |
KR20170077097A (ko) | 2017-07-05 |
JP2007281406A (ja) | 2007-10-25 |
KR20130133733A (ko) | 2013-12-09 |
JP6140207B2 (ja) | 2017-05-31 |
KR20150044865A (ko) | 2015-04-27 |
JP2019004151A (ja) | 2019-01-10 |
MY163588A (en) | 2017-09-29 |
JP2017103459A (ja) | 2017-06-08 |
TW201717261A (zh) | 2017-05-16 |
JP6377689B2 (ja) | 2018-08-22 |
TWI336491B (en) | 2011-01-21 |
KR20140107158A (ko) | 2014-09-04 |
TW201042951A (en) | 2010-12-01 |
JP2017038064A (ja) | 2017-02-16 |
JP2015133510A (ja) | 2015-07-23 |
TW201519287A (zh) | 2015-05-16 |
TW201216641A (en) | 2012-04-16 |
TWI466488B (zh) | 2014-12-21 |
TW201428984A (zh) | 2014-07-16 |
JP2014017495A (ja) | 2014-01-30 |
TW200739681A (en) | 2007-10-16 |
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