MXPA02005186A - Metodo y aparato para contactos de auto-adulteracion para un semiconductor. - Google Patents

Metodo y aparato para contactos de auto-adulteracion para un semiconductor.

Info

Publication number
MXPA02005186A
MXPA02005186A MXPA02005186A MXPA02005186A MXPA02005186A MX PA02005186 A MXPA02005186 A MX PA02005186A MX PA02005186 A MXPA02005186 A MX PA02005186A MX PA02005186 A MXPA02005186 A MX PA02005186A MX PA02005186 A MXPA02005186 A MX PA02005186A
Authority
MX
Mexico
Prior art keywords
silicon
silver
temperature
eutectic
adulterant
Prior art date
Application number
MXPA02005186A
Other languages
English (en)
Spanish (es)
Inventor
L Meier Daniel
Original Assignee
Ebara Solar Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Solar Inc filed Critical Ebara Solar Inc
Publication of MXPA02005186A publication Critical patent/MXPA02005186A/es

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H10F77/1223—Active materials comprising only Group IV materials characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Photovoltaic Devices (AREA)
MXPA02005186A 1999-11-23 2000-11-22 Metodo y aparato para contactos de auto-adulteracion para un semiconductor. MXPA02005186A (es)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16735899P 1999-11-23 1999-11-23
US09/538,034 US6632730B1 (en) 1999-11-23 2000-03-29 Method for self-doping contacts to a semiconductor
PCT/US2000/032257 WO2001041221A1 (en) 1999-11-23 2000-11-22 Method and apparatus for self-doping contacts to a semiconductor

Publications (1)

Publication Number Publication Date
MXPA02005186A true MXPA02005186A (es) 2004-05-05

Family

ID=26863088

Family Applications (1)

Application Number Title Priority Date Filing Date
MXPA02005186A MXPA02005186A (es) 1999-11-23 2000-11-22 Metodo y aparato para contactos de auto-adulteracion para un semiconductor.

Country Status (10)

Country Link
US (4) US6632730B1 (enExample)
EP (1) EP1234342A1 (enExample)
JP (1) JP2003529207A (enExample)
KR (1) KR20020066327A (enExample)
CN (1) CN1260830C (enExample)
AU (1) AU780960B2 (enExample)
BR (1) BR0015803A (enExample)
CA (1) CA2392342C (enExample)
MX (1) MXPA02005186A (enExample)
WO (1) WO2001041221A1 (enExample)

Families Citing this family (77)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7045187B2 (en) * 1998-06-22 2006-05-16 Nee Han H Metal alloys for the reflective or the semi-reflective layer of an optical storage medium
US7314657B2 (en) * 2000-07-21 2008-01-01 Target Technology Company, Llc Metal alloys for the reflective or the semi-reflective layer of an optical storage medium
US7384677B2 (en) * 1998-06-22 2008-06-10 Target Technology Company, Llc Metal alloys for the reflective or semi-reflective layer of an optical storage medium
US6852384B2 (en) * 1998-06-22 2005-02-08 Han H. Nee Metal alloys for the reflective or the semi-reflective layer of an optical storage medium
US7316837B2 (en) * 2000-07-21 2008-01-08 Target Technology Company, Llc Metal alloys for the reflective or the semi-reflective layer of an optical storage medium
US7314659B2 (en) * 2000-07-21 2008-01-01 Target Technology Company, Llc Metal alloys for the reflective or semi-reflective layer of an optical storage medium
US7374805B2 (en) * 2000-07-21 2008-05-20 Target Technology Company, Llc Metal alloys for the reflective or the semi-reflective layer of an optical storage medium
WO2004066354A2 (en) * 2003-01-16 2004-08-05 Target Technology Company, Llc Photo-voltaic cells including solar cells incorporating silver-alloy reflective and/or transparent conductive surfaces
WO2004094135A1 (en) * 2003-04-18 2004-11-04 Target Technology Company, Llc Metal alloys for the reflective or the semi-reflective layer of an optical storage medium
US8664525B2 (en) * 2003-05-07 2014-03-04 Imec Germanium solar cell and method for the production thereof
US7964789B2 (en) * 2003-05-07 2011-06-21 Imec Germanium solar cell and method for the production thereof
US7960645B2 (en) * 2003-05-07 2011-06-14 Imec Germanium solar cell and method for the production thereof
US7170001B2 (en) * 2003-06-26 2007-01-30 Advent Solar, Inc. Fabrication of back-contacted silicon solar cells using thermomigration to create conductive vias
US7649141B2 (en) * 2003-06-30 2010-01-19 Advent Solar, Inc. Emitter wrap-through back contact solar cells on thin silicon wafers
JP2005135942A (ja) * 2003-10-28 2005-05-26 Canon Inc 電極配設方法
US20050172996A1 (en) 2004-02-05 2005-08-11 Advent Solar, Inc. Contact fabrication of emitter wrap-through back contact silicon solar cells
US7144751B2 (en) * 2004-02-05 2006-12-05 Advent Solar, Inc. Back-contact solar cells and methods for fabrication
US7335555B2 (en) * 2004-02-05 2008-02-26 Advent Solar, Inc. Buried-contact solar cells with self-doping contacts
US20060060238A1 (en) * 2004-02-05 2006-03-23 Advent Solar, Inc. Process and fabrication methods for emitter wrap through back contact solar cells
US20060039973A1 (en) * 2004-08-19 2006-02-23 Mary Aldritt Effervescent composition including water soluble dietary fiber
DE102004044709A1 (de) * 2004-09-15 2006-03-16 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur gleichzeitigen Rekristalisierung und Dotierung von Halbleiterschichten und nach diesem Verfahren hergestellte Halbleiterschichtsysteme
JP4846219B2 (ja) * 2004-09-24 2011-12-28 シャープ株式会社 結晶シリコン太陽電池の製造方法
US20060102228A1 (en) * 2004-11-12 2006-05-18 Ferro Corporation Method of making solar cell contacts
US7790574B2 (en) 2004-12-20 2010-09-07 Georgia Tech Research Corporation Boron diffusion in silicon devices
GB2424312B (en) * 2005-03-14 2010-03-03 Denso Corp Method of forming an ohmic contact in wide band semiconductor
US8093491B2 (en) 2005-06-03 2012-01-10 Ferro Corporation Lead free solar cell contacts
US7824579B2 (en) * 2005-06-07 2010-11-02 E. I. Du Pont De Nemours And Company Aluminum thick film composition(s), electrode(s), semiconductor device(s) and methods of making thereof
US7771623B2 (en) * 2005-06-07 2010-08-10 E.I. du Pont de Nemours and Company Dupont (UK) Limited Aluminum thick film composition(s), electrode(s), semiconductor device(s) and methods of making thereof
US20070014963A1 (en) * 2005-07-12 2007-01-18 Nee Han H Metal alloys for the reflective layer of an optical storage medium
US7718092B2 (en) * 2005-10-11 2010-05-18 E.I. Du Pont De Nemours And Company Aluminum thick film composition(s), electrode(s), semiconductor device(s) and methods of making thereof
CN101394739A (zh) * 2006-02-28 2009-03-25 西巴控股公司 抗微生物化合物
US8575474B2 (en) * 2006-03-20 2013-11-05 Heracus Precious Metals North America Conshohocken LLC Solar cell contacts containing aluminum and at least one of boron, titanium, nickel, tin, silver, gallium, zinc, indium and copper
US8076570B2 (en) * 2006-03-20 2011-12-13 Ferro Corporation Aluminum-boron solar cell contacts
ATE441156T1 (de) * 2006-05-04 2009-09-15 Elektrobit Wireless Comm Ltd Verfahren zum betrieb eines rfid-netzwerks
US20080111206A1 (en) * 2006-11-10 2008-05-15 Evergreen Solar, Inc. Substrate with Two Sided Doping and Method of Producing the Same
CA2568136C (en) * 2006-11-30 2008-07-29 Tenxc Wireless Inc. Butler matrix implementation
WO2008070087A2 (en) * 2006-12-05 2008-06-12 Nano Terra Inc. Method for patterning a surface
US8608972B2 (en) * 2006-12-05 2013-12-17 Nano Terra Inc. Method for patterning a surface
EP2100336A4 (en) * 2006-12-22 2013-04-10 Applied Materials Inc CONNECTING TECHNOLOGIES FOR REVERSE SOLAR CELLS AND MODULES
EP2104147B1 (en) * 2006-12-26 2015-04-15 Kyocera Corporation Solar cell element and solar cell element manufacturing method
JP5530920B2 (ja) * 2007-04-25 2014-06-25 ヘレウス プレシャス メタルズ ノース アメリカ コンショホーケン エルエルシー 銀及びニッケル、もしくは、銀及びニッケル合金からなる厚膜導電体形成、及びそれから作られる太陽電池
US20080264332A1 (en) * 2007-04-25 2008-10-30 Fareed Sepehry-Fard Method, system, and apparatus for doping and for multi-chamber high-throughput solid-phase epitaxy deposition process
TWI449183B (zh) * 2007-06-13 2014-08-11 Schott Solar Ag 半導體元件及製造金屬半導體接點之方法
US8309844B2 (en) 2007-08-29 2012-11-13 Ferro Corporation Thick film pastes for fire through applications in solar cells
CN102593243A (zh) * 2007-08-31 2012-07-18 费罗公司 用于太阳能电池的分层触点结构
WO2009064870A2 (en) * 2007-11-13 2009-05-22 Advent Solar, Inc. Selective emitter and texture processes for back contact solar cells
US20090239363A1 (en) * 2008-03-24 2009-09-24 Honeywell International, Inc. Methods for forming doped regions in semiconductor substrates using non-contact printing processes and dopant-comprising inks for forming such doped regions using non-contact printing processes
KR20110008284A (ko) * 2008-04-29 2011-01-26 어플라이드 머티어리얼스, 인코포레이티드 모놀리식 모듈 어셈블리 기술들을 이용하여 제조된 광전지 모듈들
US8207444B2 (en) * 2008-07-01 2012-06-26 Sunpower Corporation Front contact solar cell with formed electrically conducting layers on the front side and backside
US20100035422A1 (en) * 2008-08-06 2010-02-11 Honeywell International, Inc. Methods for forming doped regions in a semiconductor material
US8053867B2 (en) * 2008-08-20 2011-11-08 Honeywell International Inc. Phosphorous-comprising dopants and methods for forming phosphorous-doped regions in semiconductor substrates using phosphorous-comprising dopants
US20100186811A1 (en) * 2008-08-26 2010-07-29 Sixtron Advanced Materials, Inc. Silicon Carbonitride Antireflective Coating
US7951696B2 (en) * 2008-09-30 2011-05-31 Honeywell International Inc. Methods for simultaneously forming N-type and P-type doped regions using non-contact printing processes
US7820532B2 (en) * 2008-12-29 2010-10-26 Honeywell International Inc. Methods for simultaneously forming doped regions having different conductivity-determining type element profiles
US8518170B2 (en) * 2008-12-29 2013-08-27 Honeywell International Inc. Boron-comprising inks for forming boron-doped regions in semiconductor substrates using non-contact printing processes and methods for fabricating such boron-comprising inks
US20100224243A1 (en) * 2009-03-05 2010-09-09 Applied Materials, Inc. Adhesion between azo and ag for the back contact in tandem junction cell by metal alloy
US20100132775A1 (en) * 2009-03-05 2010-06-03 Applied Materials, Inc. Adhesion between azo and ag for the back contact in tandem junction cell by metal alloy
KR101145928B1 (ko) * 2009-03-11 2012-05-15 엘지전자 주식회사 태양 전지 및 태양 전지의 제조 방법
US8324089B2 (en) * 2009-07-23 2012-12-04 Honeywell International Inc. Compositions for forming doped regions in semiconductor substrates, methods for fabricating such compositions, and methods for forming doped regions using such compositions
KR20110024639A (ko) * 2009-09-02 2011-03-09 엘지이노텍 주식회사 도펀트 확산용액, 및 이의 용도
US20110132444A1 (en) 2010-01-08 2011-06-09 Meier Daniel L Solar cell including sputtered reflective layer and method of manufacture thereof
US8241945B2 (en) * 2010-02-08 2012-08-14 Suniva, Inc. Solar cells and methods of fabrication thereof
KR101032740B1 (ko) * 2010-10-05 2011-05-06 에프알앤디건설(주) 교량의 교좌장치
SG191045A1 (en) 2010-12-06 2013-08-30 Shinetsu Chemical Co Solar cell and solar-cell module
SG191044A1 (en) * 2010-12-06 2013-08-30 Shinetsu Chemical Co Solar cell and solar-cell module
US9362015B2 (en) 2010-12-16 2016-06-07 The Regents Of The University Of Michigan Silicon-based solar cell with eutectic composition
WO2012083191A2 (en) * 2010-12-16 2012-06-21 The Regents Of The University Of Michigan Silicon-based solar cell with eutectic composition
US8629294B2 (en) 2011-08-25 2014-01-14 Honeywell International Inc. Borate esters, boron-comprising dopants, and methods of fabricating boron-comprising dopants
US8975170B2 (en) 2011-10-24 2015-03-10 Honeywell International Inc. Dopant ink compositions for forming doped regions in semiconductor substrates, and methods for fabricating dopant ink compositions
TW201511296A (zh) 2013-06-20 2015-03-16 Plant PV 用於矽太陽能電池之核-殼型鎳粒子金屬化層
USD706224S1 (en) * 2013-08-01 2014-06-03 Ebara Corporation Electrical contact for use in a plating apparatus
US20160224935A1 (en) * 2014-07-08 2016-08-04 Rick Burnett Shipper and Carrier Interaction Optimization Platform
US9559642B2 (en) 2015-01-02 2017-01-31 Logitech Europe, S.A. Audio delivery system having an improved efficiency and extended operation time between recharges or battery replacements
WO2017035103A1 (en) 2015-08-25 2017-03-02 Plant Pv, Inc Core-shell, oxidation-resistant particles for low temperature conductive applications
US10418497B2 (en) 2015-08-26 2019-09-17 Hitachi Chemical Co., Ltd. Silver-bismuth non-contact metallization pastes for silicon solar cells
US10000645B2 (en) 2015-11-24 2018-06-19 PLANT PV, Inc. Methods of forming solar cells with fired multilayer film stacks
CN115274912B (zh) * 2022-08-01 2024-01-30 中国电子科技集团公司第四十四研究所 高空间分辨率的x射线探测器单元、探测器及其制作方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2998334A (en) 1958-03-07 1961-08-29 Transitron Electronic Corp Method of making transistors
US3159215A (en) * 1958-09-23 1964-12-01 California Research Corp Assisted petroleum recovery by selective combustion in multi-bedded reservoirs
AU419791B2 (en) 1968-06-20 1971-12-15 Matsushita Electric Industrial Co., Ltd Method of making a switching element
NL7013227A (enExample) * 1970-09-08 1972-03-10 Philips Nv
GB1416964A (en) 1973-07-09 1975-12-10 Akimov J S Contact between an electrode metal and a semiconductor
US4184897A (en) * 1978-09-21 1980-01-22 General Electric Company Droplet migration doping using carrier droplets
US4159215A (en) * 1978-09-21 1979-06-26 General Electric Company Droplet migration doping using reactive carriers and dopants
US4163983A (en) * 1978-09-28 1979-08-07 General Electric Company Solid state neuron
US4207670A (en) * 1978-09-28 1980-06-17 General Electric Company Method for making a solid state neuron
US4198247A (en) * 1978-12-07 1980-04-15 General Electric Company Sealant films for materials having high intrinsic vapor pressure
DE2939541A1 (de) 1979-09-28 1981-04-16 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von halbleitereigenschaften aufweisendem, mit antimon hochdotiertem silicium
JPS59189679A (ja) * 1983-04-13 1984-10-27 Hitachi Ltd ダイオ−ド
JPS6249676A (ja) 1985-08-29 1987-03-04 Sharp Corp 太陽電池
US5258624A (en) 1988-05-27 1993-11-02 U.S. Philips Corp. Transferred electron effect device
DE3901042A1 (de) 1989-01-14 1990-07-26 Nukem Gmbh Verfahren und vorrichtung zur herstellung eines halbleiter-schichtsystems
JPH0919118A (ja) 1995-06-28 1997-01-17 Toshiba Corp くし形回転電機の回転子の製造方法
US5641362A (en) 1995-11-22 1997-06-24 Ebara Solar, Inc. Structure and fabrication process for an aluminum alloy junction self-aligned back contact silicon solar cell
JPH09191118A (ja) 1996-01-11 1997-07-22 Shin Etsu Chem Co Ltd 太陽電池の製造方法
US6180869B1 (en) 1997-05-06 2001-01-30 Ebara Solar, Inc. Method and apparatus for self-doping negative and positive electrodes for silicon solar cells and other devices

Also Published As

Publication number Publication date
US6703295B2 (en) 2004-03-09
CA2392342C (en) 2011-01-04
JP2003529207A (ja) 2003-09-30
CN1415119A (zh) 2003-04-30
EP1234342A1 (en) 2002-08-28
KR20020066327A (ko) 2002-08-14
US6664631B2 (en) 2003-12-16
AU1798301A (en) 2001-06-12
CN1260830C (zh) 2006-06-21
US6632730B1 (en) 2003-10-14
US20030203603A1 (en) 2003-10-30
BR0015803A (pt) 2002-08-13
CA2392342A1 (en) 2001-06-07
AU780960B2 (en) 2005-04-28
US6737340B2 (en) 2004-05-18
US20030003693A1 (en) 2003-01-02
WO2001041221A1 (en) 2001-06-07
US20030008485A1 (en) 2003-01-09

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Legal Events

Date Code Title Description
GB Transfer or rights

Owner name: EBARA CORPORATION

FA Abandonment or withdrawal